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Carbonization in boron-ion-implanted polymethylmethacrylate as revealed from Raman spectroscopy and electrical measurements |
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| Authors: | T Kavetskyy J Nowak J Borc J Rusnák O Šauša A L Stepanov |
| Institution: | 1. Drohobych Ivan Franko State Pedagogical University, Drohobych, Ukraine;2. The John Paul II Catholic University of Lublin, Lublin, Polandkavetskyy@yahoo.com;4. The John Paul II Catholic University of Lublin, Lublin, Poland;5. Lublin University of Technology, Lublin, Poland;6. Institute of Physics, Slovak Academy of Sciences, Bratislava, Slovak Republic;7. Kazan Physical-Technical Institute, Russian Academy of Sciences, Kazan, Russian Federation;8. Kazan National Research Technological University, Kazan, Russian Federation;9. Kazan Federal University, Kazan, Russian Federation |
| Abstract: | ABSTRACTThe results of Raman spectroscopy and electrical measurements of 40 keV boron-ion-implanted polymethylmethacrylate with ion doses from 6.25 × 1014 to 5.0 × 1016 ions/cm2 are reported for the first time. The Raman spectra recorded in the 400–3800 cm?1 range, showing the formation of new carbon–carbon bands for the as-implanted samples at higher ion doses (>1016 ions/cm2), are found to be an additional support for carbonization processes earlier revealed by slow positrons. The current–voltage dependences at 360 K testify also that the as-implanted samples examined with higher fluences (3.75 × 1016 and 5.0 × 1016 ions/cm2) have created a very thin conductive layer or conductive joints due to carbonization. |
| Keywords: | Carbon clusters conductive layer ion implantation polymethylmethacrylate Raman spectra |