Optical characterization of the silicon photodiodes for the establishment of national radiometric standards

Optical properties of the silicon photodiodes are investigated in the visible spectral regime. Non-linearity measurement standard was established by using Hamamatsu S1337-11 type windowless silicon photodiode whose non-linearity value was found to be better than 6×10⁻⁵ at photocurrent level of 10⁻⁹ to 10⁻⁴ A. Temperature effects on the spectral responsivity for S1337-11, S1337-1010BQ and S1227-1010BQ type photodiodes were analyzed between 20°C and 40°C at 488.1, 514.7 and 632.8 nm vacuum wavelengths. The spatial uniformities of the responsivity for three type photodiodes are performed with a laser beam having 1 mm diameter by using home made two-axis micro translation system. Results of the reflectance measurements for three elements of reflection-based trap detectors were compared with the predicted values obtained from Fresnel equations.     

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity (> 1 A/W), high saturation power (> 45 mA) in the static state and extremely low dark current density (0.04 pA/μm²) with 3 dB bandwidth at 13.4 GHz have been achieved.     

A flexible blue light sensitive organic photodiode with high properties for the applications in low‐voltage‐control circuit and flexion sensors

Low‐voltage‐control circuit is one of the most important parts of the modern electrical control system due to the avoidance of operation risk and easy automation. Here, based on a C₆₀: m‐MTDATA bulk heterojunction, a blue‐light‐sensitive organic photodiode (OPD) is explored for the development of flexible low‐voltage‐control circuit. The control of circuit under 2000 V high voltage is achieved. The influences of the organic‐layer thickness, the donor/acceptor volume ratio and the matching of energy levels on the photocurrent are investigated. The maximum light/dark current ratio and current transfer ratio of 1.3 × 10⁴ and 1.3% are achieved, respectively. The highest photoresponse is up to 130 mA/W, markedly higher than some commercial inorganic photodiodes. This device could also be used as flexion and mechanical force sensors with the current density changing under different bending conditions. Therefore, this sort of OPD has a promising application in low‐voltage‐controlled, high‐voltage‐endurable hands for intelligent robots.     

Modeling of transient and steady-state dark current in amorphous silicon p–i–n photodiodes

A theoretical model for describing the bias-dependent transient and steady-state behavior of dark current in hydrogenated amorphous silicon (a-Si:H) p–i–n photodiode has been developed. An analytical expression for the bias-dependent steady-state thermal generation current is derived by solving the continuity equations for both electrons and holes. The model for describing transient dark current in a-Si:H p–i–n photodiode is developed by considering the depletion of electrons from the i-layer and carrier injection through p–i interface. For photodiodes that have very good junction properties, the high initial dark current decreases with time monotonously and reaches a plateau. However, in case of poor junctions, the injection current can be the dominating mechanism for transient leakage current at relatively high biases, the dark current decays initially and then rises to a steady-state value. The proposed physics-based dark current model is compared with published experimental results on several photodiodes. The comparison of the model with the experimental data allows an estimate of active dopant concentration in the p-layer and the defect density in the midgap of i-layer.     

Principal component analysis of non-uniformity in electrical characteristics of HgCdTe photodiode arrays

We present a method of analyzing the non-uniformity in electrical characteristics of HgCdTe photodiode arrays for infrared imaging applications. We have selected dynamic resistance–voltage (R–V) characteristics for analyzing electrical behavior of HgCdTe photodiodes because the dynamic resistance at a given operating voltage directly governs the imager performance and being derivative of current–voltage (I–V) characteristics, it has little impact of the constant shifts due to stray illumination during dark measurements, relaxing the stringent requirement of perfect dark conditions to some extent for performance analysis. We have demonstrated that by using statistical analysis such as correlation of the selected signatures and their principal component analysis, we can identify the root cause of the high non-uniformity among sensor pixels in the array. The method has been implemented using theoretical I–V model of MWIR HgCdTe photodiodes, but it is generic and may be implemented on any other types of diode arrays for theoretical or experimental analysis of their non-uniformity.     

Organic solar cells with very high fill factor and voltage using tetrapropyl‐tetraphenyl‐diindenoperylene as green donor

We present 2,3,10,11‐tetrapropyl‐1,4,9,12‐tetraphenyl‐diindeno[1,2,3‐cd:1′,2′,3′‐lm]perylene (P4‐Ph4‐DIP) as new green donor for small molecule organic solar cells (SMOSC). P4‐Ph4‐DIP absorbs in the green spectral range of 490–580 nm and thus is a decisive building block towards broad coverage of the sun spectrum. SMOSC with P4‐Ph4‐DIP as donor and C₆₀ as blue‐absorbing acceptor display very high fill factors FF > 76% and open circuit voltages of 0.99 V, reaching η = 1.92% for 12 nm P4‐Ph4‐DIP. Current voltage and external quantum efficiency spectra suggest that an exciton diffusion length E_D < 20 nm is the main limiting factor. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

高速光探测器封装的优化设计

提出了一种高速光探测器封装优化设计的新方法。首先用矢量网络分析仪对封装寄生参量和探测器芯片进行准确测量,研究了探测芯片的本征参量与封装寄生参量之间的谐振现象,然后合理利用这种谐振效应对芯片的频率响应特性进行有效补偿。理论分析和实验结果都证明优化封装后器件的频率响应带宽超过了芯片的响应带宽。该方法不需要另加其它元件．而仅仅利用光电器件封装过程中必不可少的金丝所带来的寄生电感,就达到了改善器件频率响应特性的目的。     

13C Nuclear Magnetic Resonance Studies of the Conformations of Serine‐3′‐ and 5′‐Thymidine Monophosphate Conjugates

The differences in the backbone conformation between O‐thymidine‐3′‐(1) and 5′‐yl O‐alkyl N‐phosphoryl serine methyl esters (2) have been investigated by solution ¹³C NMR spectroscopy. The stereo‐sensitive vicinal ³¹P–¹³C coupling constants were measured and used in the conformational analysis for the P–O5′–C5′, P–O3′–C3′, and P–N–C_α bonds. Three‐dimensional structural characteristics of dephosphorylation reactions of Compounds are also discussed.     

Performance of the far‐IR beamline of the 6 MeV tabletop synchrotron light source

The performance of the far‐infrared (FIR) beamline of the 6 MeV tabletop synchrotron light source MIRRORCLE‐6FIR dedicated to far‐infrared spectroscopy is presented. MIRRORCLE‐6FIR is equipped with a perfectly circular optical system (PhSR) placed around the 1 m‐long circumference electron orbit. To illustrate the facility of this light source, the FIR output as well as its spectra were measured. The optimum optical system was designed by using the ray‐tracing simulation code ZEMAX. The measured FIR intensity with the PhSR in place is about five times higher than that without the PhSR, which is in good agreement with the simulation results. The MIRRORCLE‐6FIR spectral flux is compared with a standard thermal source and is found to be 1000 times greater than that from a typical thermal source at ～15 cm^?1. It is also observed that the MIRRORCLE‐6FIR radiation has a highly coherent nature. The broadband infrared allows the facility to reach the spectral range from 10 cm^?1 to 100 cm^?1. MIRRORCLE‐6FIR, owing to a large beam current, the PhSR mirror system, a large dynamic aperture and small ring energy, can deliver a bright flux of photons in the FIR/THz region useful for broadband spectroscopy.     

Cu2S nanocrystals incorporated highly efficient non-fullerene ternary organic solar cells

Here, we report Cu₂S nanocrystals based non-fullerene ternary polymer solar cells by incorporating Cu₂S in conjugated polymer (PBDB-T: poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5-b′]dithiophene))-alt-(5,5-(1′,3′-di-2-thienyl-5′,7′-bis(2-ethylhexyl) benzo[1′,2′-c:4′,5′-c′]dithiophene-4,8-dione))]) and small molecule non-fullerene compound (ITIC:3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2′,3′-d′]-s-indaceno[1,2-b:5,6-b′]dithiophene). The devices were fabricated in inverted configuration i.e. ITO/ZnO/PBDB-T: Cu₂S NCs: ITIC/MoO₃/Ag. Effect of concentration of Cu₂S nanocrystals on the performance parameters of PBDB-T: ITIC based organic solar cells is studied. An enhancement in the power conversion efficiency from 8.24% to 9.53% is achieved for the optimum concentration of Cu₂S nanocrystals in the organic photoactive blend. The cause of improvement in the performance parameters of the device is investigated by means of the light intensity dependent electrochemical impedance spectroscopy and atomic force microscopy. It is found that the devices with Cu₂S nanocrystals have less trap-assisted recombination.     

The high‐resolution absorption spectroscopy branch on the VUV beamline DESIRS at SOLEIL

A VUV absorption spectroscopy facility designed for ultra‐high spectral resolution is in operation as a dedicated branch on the DESIRS beamline at Synchrotron SOLEIL. This branch includes a unique VUV Fourier transform spectrometer (FTS) and a dedicated versatile gas sample chamber. The FTS instrument can cover a large UV–VUV spectral range from 4 to 30 eV, with an ultimate line width of 0.08 cm^?1 on a large spectral window, ΔE/E = 7%, over which all spectral features can be acquired in a multiplex way. The performance can be considered to be a middle ground between broadband moderate‐resolution spectrometers based on gratings and ultra‐high‐spectral‐resolution VUV tunable‐laser‐based techniques over very narrow spectral windows. The various available gaseous‐sample‐handling setups, which function over a wide range of pressures and temperatures, and the acquisition methodology are described. A selection of experimental results illustrates the performance and limitations of the FTS‐based facility.     

Integrated fluorescence sensor based on ring‐shaped organic photodiodes

We demonstrate a novel sensor type, which is based on the monolithic integration of luminescent optical sensor spots together with ring‐shaped thin‐film organic photodiodes on one substrate. The organic photodiodes serve as integrated fluorescence detectors, simplifying the detection system by minimizing the number of required optical components. The proposed concept enables filter‐less discrimination between excitation light and generated fluorescence light. The functionality of the concept is demonstrated by an integrated oxygen sensor, exhibiting excellent performance. The sensor spots are excited by an assembled organic light emitting diode. The integrated optical sensor platform is suitable for the parallel detection of multiple parameters. Sensor schemes for the analytical parameters carbon dioxide, temperature and ammonia, are proposed.

     

Electroluminescence enhancement in ultraviolet organic light‐emitting diode with graded hole‐injection and ‐transporting structure

Electroluminescent intensity and external quantum efficiency (EQE) in ultraviolet organic light‐emitting diodes (UV OLEDs) have been remarkably enhanced by using a graded hole‐injection and ‐transporting (HIT) structure of MoO₃/N,N ′‐bis(naphthalen‐1‐yl)‐N,N ′‐bis(phenyl)‐benzidine/MoO₃/4,4′‐bis(carbazol‐9‐yl)biphenyl (CBP). The graded‐HIT based UV OLED shows superior short‐wavelength emis‐ sion with spectral peak of ～410 nm, maximum electroluminescent intensity of 2.2 mW/cm² at 215 mA/cm² and an EQE of 0.72% at 5.5 mA/cm². Impedance spectroscopy is employed to clarify the enhanced hole‐injection and ‐transporting capacity of the graded‐HIT structure. Our results provide a simple and effective approach for constructing efficient UV OLEDs. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Hydrolytic reactions of cyclic bis(3′‐5′)diadenylic acid (c‐di‐AMP)

Hydrolytic reactions of cyclic bis(3′‐5′)diadenylic acid (c‐di‐AMP) have been followed by Reversed phase high performance liquid chromatography (RP‐HPLC) over a wide pH range at 90 °C. Under neutral and basic conditions (pH ≥ 7), disappearance of the starting material (first‐order in [OH^?]) was accompanied by formation of a mixture of adenosine 2′‐monophosphate and 3′‐monophosphate (2′‐AMP and 3′‐AMP). Under very acidic conditions (from H₀ = ?0.7 to 0.2), c‐di‐AMP undergoes two parallel reactions (first‐order in [H⁺]): the starting material is cleaved to 2′‐AMP and 3′‐AMP and depurinated to adenine (i.e., cleavage of the N‐glycosidic bond), the former reaction being slightly faster than the latter one. At pH 1–3, isomerization to cyclic bis(2′‐5′)diadenylic acid competes with the depurination. Copyright © 2012 John Wiley & Sons, Ltd.     

Identification of two Ag‐2,2′:6′,2″‐terpyridine surface species on Ag nanoparticle surfaces by excitation wavelength dependence of SERS spectra and factor analysis: evidence for chemical mechanism contribution to SERS of Ag(0)–tpy

Measurement and interpretation of the excitation wavelength dependence of surface‐enhanced Raman scattering (SERS) spectra of molecules chemisorbed on plasmonic, e.g. Ag nanoparticle (NP) surfaces, are of principal importance for revealing the charge transfer (CT) mechanism contribution to the overall SERS enhancement. SERS spectra, their excitation wavelength dependence in the 445–780‐nm range and factor analysis (FA) were used for the identification of two Ag‐2,2′:6′,2″‐terpyridine (tpy) surface species, denoted Ag⁺–tpy and Ag(0)–tpy, on Ag NPs in systems with unmodified and/or purposefully modified Ag NPs originating from hydroxylamine hydrochloride‐reduced hydrosols. Ag⁺–tpy is a spectral analogue of [Ag(tpy)]⁺ complex cation, and its SERS shows virtually no excitation wavelength dependence. By contrast, SERS of Ag(0)–tpy surface complex generated upon chloride‐induced compact aggregate formation and/or in strongly reducing ambient shows a pronounced excitation wavelength dependence attributed to a CT resonance (the chemical mechanism) contribution to the overall SERS enhancement. Both the resonance (λ_exc = 532 nm) and off‐resonance (λ_exc = 780 nm) pure‐component spectra of Ag(0)–tpy obtained by FA are largely similar to surface‐enhanced resonance Raman scattering (λ_exc = 532 nm in resonance with singlet metal to ligand CT (¹ MLCT) transition) and SERS (λ_exc = 780 nm) spectra of [Fe(tpy)₂]²⁺ complex dication. Copyright © 2014 John Wiley & Sons, Ltd.     

Analysis of G‐quadruplex conformations using Raman and polarized Raman spectroscopy

G‐quadruplexes (G4s) are four‐stranded DNA structures formed within nucleic acid sequences that are rich in guanines. G4 formation within DNA strands is believed to have significant biological relevance for the control of cell replication and gene expression. Therefore, the development and validation of experimental techniques that can easily and reliably characterize G4 structures under biologically relevant measurement conditions, like Raman spectroscopy, are desirable for G4‐targeted structure based drug design. Here we report Raman and polarized Raman studies of solutions of three oligonucleotides, thrombin binding aptamer (TBA) 5′‐GGTTGGTGTGGTTGG‐3′, human telomeric (HT) 5′‐(TTAGGG)₄‐3′, and a modified c‐Myc NHE‐III₁ sequence (MycL1) 5′‐TGAGGGTGGGTAGGGTGGGTAA‐3′, which were previously reported to form four distinct intramolecular G4 structures in the presence of Na⁺ or K⁺, as determined by NMR. Our results support the previously proposed antiparallel (TBA), antiparallel and hybrid (HT), and parallel with double‐chain reversal (DCR) loop (MycL1) structures. Large sample‐dependent variations in the intensity of bands associated with deoxyribose backbone modes in the 840–930 cm⁻¹ and 1420–1460 cm⁻¹ spectral regions were observed. Most notably, a highly polarized deoxyribose ring symmetric stretch (~930 cm⁻¹) appeared strongly in the solution spectra for HT and TBA, but was very weak or absent in the solution spectrum for MycL1 and the drop deposition (dried sample) spectra for all three oligonucleotides. It is hypothesized that the intensity of this band is likely controlled by furanose ring structure uniformity and/or solvent accessibility to certain nucleotide binding sites. Raman depolarization ratios measured for the G4s in solution were generally very similar to those previously reported for canonical B DNA, with the possible exception of base ring modes that consistently yielded slightly lower depolarization ratios for G4s compared to B DNA. The results further underscore the utility of Raman and polarized Raman spectroscopy for G4 structure elucidation under biologically relevant solution conditions. Copyright © 2015 John Wiley & Sons, Ltd.     

碲镉汞焦平面光伏器件的实时γ辐照效应研究

对碲镉汞长波和中波焦平面光伏器件进行了实时γ射线辐照效应研究,通过辐照过程中实时测试器件的电流-电压特性,发现随着辐照剂量的增加,中波器件比长波器件表现出更好的抗辐照能力.对于长波器件,随着辐照剂量的增大,能够反映器件性能的零偏电阻逐渐降低;对于中波器件,零偏电阻随着辐照剂量的增加无固定变化趋势,辐照效应主要表现在电阻-电压曲线随着辐照剂量增加出现越来越明显的扰动.根据光伏器件的暗电流机理,对长波器件的电阻-电压曲线进行数值拟合,发现辐照引起少子产生-复合寿命逐渐降低,缺陷密度逐渐增大,主要影响的电流机理 关键词： γ辐照 辐照效应 光伏器件 碲镉汞     

High mobility organic thin-film transistors on plastic substrate

We have fabricated organic thin-film transistors (OTFTs) based on di-n-decyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C₁₀-DNTT) on a polyimide gate dielectric coated on a polycarbonate substrate with a bottom-gate, top-contact configuration. Mobilities of the C₁₀-DNTT-based TFTs were as high as 2.4 cm² V^?1 s^?1, which are much better than those of the parent dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)-based TFTs (mobility ～ 0.5 cm²/V) fabricated on the same substrate. Compared to the C₁₀-DNTT-TFTs on the conventional Si/SiO₂ substrate, the present mobility of C₁₀-DNTT-TFTs are somewhat reduced, which can be attributed to reduced crystallinity on the polyimide gate dielectric, although the crystalline phase on the polyimide is the same as on the Si/SiO₂ substrate.     

Theoretical investigations on 4,4′,5,5′‐tetranitro‐2,2′‐1H,1′H‐2,2′‐biimidazole derivatives as potential nitrogen‐rich high energy materials

The ―NH₂, ―NO₂, ―NHNO₂, ―C(NO₂)₃ and ―CF(NO₂)₂ substitution derivatives of 4,4′,5,5′‐tetranitro‐2,2′‐1H,1′H‐2,2′‐biimidazole were studied at B3LYP/aug‐cc‐pVDZ level of density functional theory. The crystal structures were obtained by molecular mechanics (MM) methods. Detonation properties were evaluated using Kamlet–Jacobs equations based on the calculated density and heat of formation. The thermal stability of the title compounds was investigated via the energy gaps (?E_{LUMO ? HOMO}) predicted. Results show that molecules T5 (D = 10.85 km·s^?1, P = 57.94 GPa) and T6 (D = 9.22 km·s^?1, P = 39.21 GPa) with zero or positive oxygen balance are excellent candidates for high energy density oxidizers (HEDOs). All of them appear to be potential explosives compared with the famous ones, octahydro‐1,3,5,7‐tetranitro‐1,3,5,7‐tetraazocane (HMX, D = 8.96 km·s^?1, P = 35.96 GPa) and hexanitrohexaazaisowurtzitane (CL‐20, D = 9.38 km·s^?1, P = 42.00 GPa). In addition, bond dissociation energy calculation indicates that T5 and T6 are also the most thermally stable ones among the title compounds. Copyright © 2014 John Wiley & Sons, Ltd.     

Low voltage red phosphorescent organic light-emitting devices with triphenylphosphine oxide and 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl electron transport layers

We have developed red phosphorescent organic light-emitting devices operating at low voltages by using triphenylphosphine oxide (Ph₃PO) and 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl (DPVBi) electron transport layers. 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) and tris-(1-phenylisoquinolinolato-C²,N) iridium(III) [Ir(piq)₃] were used as host and guest materials, respectively. Small voltage drops across the electron transport layers and direct injection of holes from 4,4′,4″-tris[N-(2-naphthyl)-N-phenyl-amino]-triphenylamine (2-TNATA) hole transport layer into the Ir(piq)₃ guests are responsible for the high current density at low voltage, resulting in a high luminance of 1000 cd/m² at low voltages of 2.8–3.0 V in devices with a structure of ITO/2-TNATA/CBP:Ir(piq)₃/DPVBi/Ph₃PO/LiF/Al.