Model for noise processes in semiconductor laser amplifiers:

A model for the noise processes in a Fabry-Perot semiconductor laser amplifier is presented. This model is based on the application of perturbation techniques to the travelling-wave rate equations for the amplifier. The model includes the effects of end-facet reflections and the backwards-travelling wave into the amplifier. The noise power spectral densities for the intensity, electron density and phase noise are derived. The model can be applied to an arbitrary gain profile and does not require homogenization of the photon field over the length of the device.     

存在外部光反馈的半导体激光器的相位噪声

本文在理论上研究了由于外部光反馈引起的半导体激光器的相位噪声.理论分析是通过引入一个反馈耦合率K和线性化速率方程,导出了半导体激光器相位噪声功率谱密度的表达式.这表明相位噪声功率谱密度随外腔长度而周期性地漂移,且功率谱密度的峰值随外部反馈耦合率而发生很大的变化.     

The suppression of optical regenerator employing semiconductor laser amplifier loop mirror on the additive noise

In this paper, transmission properties of the regenerator employing a semiconductor laser amplifier loop mirror (SLALOM) are discussed. The ability of the regenerator to suppress the additive noise in the input data train is calculated. It’s shown that the regenerator can greatly suppress noise in communication system and improve their communication capacity by choosing suitable semiconductor laser amplifier(SLA) and the power of injected continuous wave.     

Theory of intensity noise in semiconductor laser emission

The intensity fluctuations expected in the output of cw semiconductor lasers are studied analytically using linearized multimode rate equations. Spontaneous emission causes intrinsic fluctuations of the laser wave. A power-independent contribution to the intensity fluctuations may occur due to inversion-induced modulation noise. The correlation of the low-frequency noise of different laser modes is investigated. The results are in agreement with experimental data reported in the literature.     

Performance of a dual-stage semiconductor laser amplifier for optical transmission repeater system

The performance of a dual-stage semiconductor laser amplifier consisting of a preamplifier and a power amplifier is evaluated theoretically and experimentally. The dual-stage optical amplifier can offer high-gain amplification with low noise figure by using a low-noise amplifier as a preamplifier. Using the dual-stage amplifier, 2.4 Gbits^–1 193 km optical fibre transmission was demonstrated. In addition, by applying an automatic power control system to the dual-stage amplifier, output power stabilization with wide dynamic range was obtained.     

High-speed wavelength-swept semiconductor laser with a polygon-scanner-based wavelength filter

Ultrahigh-speed tuning of an extended-cavity semiconductor laser is demonstrated. The laser resonator comprises a unidirectional fiber-optic ring, a semiconductor optical amplifier as the gain medium, and a novel scanning filter based on a polygonal scanner. Variable tuning rates up to 1150 nm/ms (15.7-kHz repetition frequency) are demonstrated over a 70-nm wavelength span centered at 1.32 microm. This tuning rate is more than an order of magnitude faster than previously demonstrated and is facilitated in part by self-frequency shifting in the semiconductor optical amplifier. The instantaneous linewidth of the source is <0.1 nm for 9-mW cw output power and a low spontaneous-emission background of -80 dB.     

Suppression of mode partition noise in a multiwavelength semiconductor laser through hybrid mode locking

We demonstrate the suppression of intensity fluctuations, which are known as mode partition noise, in a multiwavelength semiconductor laser by using a hybrid mode-locking scheme. The laser design incorporates a saturable absorber and a gain-modulated semiconductor optical amplifier, along with spectral filtering, in an external cavity to achieve multiwavelength hybrid mode locking. The mode-locked laser produces an error-free (pulse Q>13) 300-MHz optical pulse train in each of three wavelength channels.     

Wavelength-tunable optical pulse generation from a fiber ring laser with a reflective semiconductor optical amplifier

This work describes, for the first time, wavelength-tunable optical pulse generation from a fiber ring laser with a reflective semiconductor optical amplifier. The optical signal to noise ratio of this fiber laser is higher than 49 dB over the wavelength-tunable range of 16 nm. Performance of this fiber ring laser operated at different wavelengths is also discussed.     

基于半导体激光器的全光波长转换的理论研究

全光波长转换是全光网络的关键技术之一。利用多模半导体激光器的速率方程,建立了基于半导体激光器的全光波长转换器的理论模型,该模型不仅考虑了注入信号光对激光腔内载流子的消耗,而且考虑了激光腔对注入信号光的放大作用。利用该模型分析了半导体激光器工作电流、注入信号光功率以及码率各参数对波长转换特性的影响。结果对于确定基于半导体激光器的全光波长转换器件的最佳工作条件有一定的参考价值。     

Femtosecond hybrid mode-locked semiconductor laser and amplifier dynamics

We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode-locking techniques. Angle stripe geometry GaAs/AlGaAs semiconductor laser amplifiers are employed in an external cavity including prisms and a stagger-tuned quantum-well saturable absorber. An identical amplifier also serves as an optical power amplifier in a stretched pulse amplification and recompression sequence. After amplification and pulse compression this laser system produces 200 fs, 160 W peak power pulses. We discuss and extend our theory, and supporting phenomenological models, of picosecond and subpicosecond optical pulse amplification in semiconductor laser amplifiers which has been successful in calculating measured spectra and time-resolved dynamics in our amplifiers. We have refined the theory to include a phenomenological model of spectral hole-burning for finite intraband thermalization time. Our calculations are consistent with an intra-band time of approximately 60 fs. This theory of large signal subpicosecond pulse amplification will be an essential tool for understanding the mode-locking dynamics of semiconductor lasers and for analysis of high speed multiple wave-length optical signal processing and transmission devices and systems based on semiconductor laser amplifiers.     

Effect of antireflection coatings on the peak wavelength of output spectrum from end facet of a semiconductor laser

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Powerful, diffraction-limited semiconductor laser using photorefractive beam coupling

We use semiconductor laser amplifiers and a photorefractive crystal to generate a high-power, diffraction-limited laser beam at 860 nm. Using a single flared amplifier, we obtain 1.09 W in a diffraction-limited beam from 2.2 W of pump power. Using an array of flared amplifiers, we also demonstrate efficient beam coupling, showing that this technique is easily extended to semiconductor amplifier arrays.     

一种测量GaAs-GaAlAs行波激光放大器增益特性的实验方法

本文报导了一种测量光耦合效率η的新实验方法。这个方法是建立于p-n结短路光电流原理上的。本文推导出适合于行波激光放大器的光耦合效率的公式。短路光电流用一检流计测量,利用公式获得光耦合效率的实验值。利用实验所测光耦合效率,测量了行波激光放大器的增益随注入电流变化的规律,其结果和实验符合。另外本文还介绍了在脉冲注入电流条件下测行波半导体激光放大器增益的实验方法。     

A novel actively and passively mode-locked semiconductor optical amplifier fiber ring laser

A novel actively and passively mode-locked semiconductor optical amplifier fiber ring laser was presented, where semiconductor optical amplifier provided cavity gain and introduced nonlinear polarization rotation, whereas, intensity modulator not only acted as modulator but also polarizer. The pulses with duration below 3 ps (FWHM) and peak power about 16 mW at a repetition rate of 10 GHz can be obtained in our system and the system stability may be enhanced. To investigate system parameters effects on mode-locked pulses, a theoretical model was developed.     

Model of lock-in in a ring laser and a semiconductor laser gyro

It is assumed that the process of lock-in in a ring laser has a finite transient time. This assumption serves as a basis for developing a semiconductor laser gyro. A semiconductor optical amplifier is applied as an amplifying medium, and a ring resonator represents a long optical fiber. The injection of an external single-frequency light into a ring resonator with subsequent circulation of counterpropagating waves is used. The light characteristics of the semiconductor laser gyro are discussed, and the rotation sensitivity of the gyro is demonstrated.     

Bifurcations and chaos in a semiconductor laser with coherent or noisy optical injection

This paper investigates theoretically the dynamical sensitivity of semiconductor lasers to external optical signals. Bifurcation analysis of ordinary rate equations, describing noise-free lasers with pure coherent external signal, reveals that considerable modifications to the extend and type of externally induced bifurcations and chaos are possible by tailoring of the laser active-medium and resonator configurations. Extending the analysis to stochastic rate equations, which describe lasers with spontaneous emission noise and noisy external signal, reveals further dynamical effects owing to the introduced random fluctuations. In particular, phase-fluctuations (incoherence) in the external signal can have a dramatic impact on induced bifurcations and chaos. The observed strong sensitivity of laser instabilities to the intensity and coherence of external signal can provide a very sensitive means to detect ultra low levels of laser radiation.     

An integrated circuit subsystem of quantum dot semiconductor optical amplifier coupled with electro-absorption modulator and its application in wavelength conversion

A multi-section circuit model of quantum dot semiconductor optical amplifier is proposed by employing the standard rate equations. Using this model, gain spectra, saturation property, and occupation probability of quantum dot semiconductor optical amplifier are analyzed by PSPICE simulation. An integrated circuit subsystem of quantum dot semiconductor optical amplifier cascaded with electro-absorption modulator is also derived to investigate the patterning effect reduction in wavelength conversion.     

半导体激光器低频噪声的Lyapunov指数计算和混沌状态判定

根据小波变换和混沌噪声理论,对半导体激光器低频噪声进行了实验和理论分析.应用相轨迹、功率谱、Lyapunov指数、关联维等方法,探讨了噪声混沌模型的可行性.实验证明半导体激光器低频噪声具有混沌特性.在理论上分析了产生混沌的原因,为研究其可靠性提供了理论基础. 关键词： 混沌 Lyapunov指数 小波变换 低频噪声     

Microwave transport systems that use semiconductor laser as radio-frequency amplifier

This investigation experimentally demonstrates the effectiveness of microwave transport systems in which a semiconductor laser is used as a radio-frequency (RF) amplifier. This scheme improves the sensitivity of the receiver in a microwave transport system by using a semiconductor laser to amplify the RF signal. The experimental results indicate that the developed architecture has great potential for use in long-distance microwave transport systems. Finally, an optical link monitoring system in the proposed architecture is experimentally demonstrated.