UHF to Ka band upconverter

A balanced upconverter curcuit has been developed in planar transmission line configuration using NEC GaAs beam lead Schottky barrier diodes. RF power output of +1.6 dBm SSB is obtained at Ka-band when up converter is driven by +17 dBm IF and +20 dBm LO signal.     

Low Noise-figure Miniature Erbium-doped Fibre Amplifier using Uncooled Pump Laser

A miniature-size erbium doped fibre amplifier (MS-EDFA) is constructed with a saturation power of 17.0 dBm and low noise figure of 5.2 dB using an uncooled pump laser. The MS-EDFA has achieved low polarization dependent gain, large signal gain and small signal gain of 0.05 dB, 15 dB (at Pin = +2 dBm) and 42 dB (at Pin = −30 dBm), respectively, with negligible temperature dependent gain. The dimension of MS-EDFA is only twice than a typical credit card.     

用光脉冲注入从锁模激光二极管再生低抖动高Q值光时钟

采用１０ＧＨＺ基准时钟光和１０Ｇｂｉｔ／ｓ的数据脉冲信号光注入到锁模激光二极管，降低了周期抖动，当注入功率为－５ｄＢｍ，在基准时钟光波长等于锁模激光二极管的光波长时，获得的最小抖动为０．２５ｐｓ，采用给锁模激光二极管，在注入功率为＋２７ｄＢｍ时，其Ｑ值达３０００。     

High Quality Factor Q and Low Timing Jitter from MLLD Using Optical Injection

采用１０ＧＨｚ基准时钟光和１０Ｇｂｉｔ／ｓ的数据脉冲信号光注入到锁模激光二极管，降低了周期抖动，当注入功率为－５ｄＢｍ，在基准时钟光波长等于锁模激光二极管的光波长时，获得的最小抖动为０．２５ｐｓ，采用混合锁模激光二极管，在注入功率为＋２７ｄＢｍ时，其Ｑ值达３０００．     

All-optical demultiplexing of 640 to 40 Gbits/s using filtered chirp of a semiconductor optical amplifier

We present a high-capacity ultrafast all-optical time demultiplexer that can be employed to retrieve 40 gigabits/second (Gb/s) base-rate channels from a 640 Gb/s single-polarized signal. The demultiplexer utilizes ultrafast effects of filtered chirp of a semiconductor optical amplifier. Excellent demultiplexing performance is shown at very low switching powers: +8 dBm (640 Gb/s data) and -14 dBm (40 GHz clock). The demultiplexer has a simple structure and, in principle, allows monolithic integration.     

一种高功率掺铒光纤超荧光光源

通过优化掺铒光纤各种参量,用一个980 nm激光二极管作抽运源,采用单程结构,在一根光纤后向获得功率高达31.74 mW(15.02 dBm)的C-波段ASE输出的同时,其前向得到了功率为10.14 mW(10.06 dBm)的L-波段ASE输出.通过简单连接组合可得到输出覆盖C＋L波段(1525~1620 nm)功率＞36 mW的掺铒光纤宽带光源.     

长波段掺铒光纤放大器用掺铒光纤的设计考虑

本文分析了长波段掺铒光纤放大器(EDFA)的增益系数与Er³⁺离子浓度的关系.研制了铝共掺杂的高浓度掺铒光纤,以缩短长波段掺铒光纤的长度.用两级泵浦实现了L-波段EDFA.光纤放大器的掺铒光纤总长18m,在1570nm波长处的小信号增益为42.26dB,输出功率为17.5dBm.我们认为,较低的浓度淬灭效应归因于光纤中较高的A1掺杂浓度.当总的输入信号功率为-3dBm时,在1570至1600nm间的7路WDM信号的增益不平坦度仅为0.68dB..     

光传输系统中SPM效应的研究

从理论上分析了单信道光传输系统中SPM效应对传输性能的影响,并通过仿真得出了不同入纤功率情况下SPM效应对单信道光传输系统影响的定量数据,当入纤功率小于0 dBm时,SPM效应不明显;入纤功率在0～12 dBm时,SPM效应减弱了色散效应的作用,延长了系统的受限距离;入纤功率大于15 dBm时,SPM效应起主导作用,单信道光传输系统极限受限功率为18 dBm.     

An efficient electrode arrangement for TWSOA based inline detector

An efficient electrode scheme is developed to enhance the inline detector performance of a 1.55 μm, InP–InGaAsP, Traveling Wave-Semiconductor Optical Amplifier (TW-SOA). A traveling wave approach is used to determine the voltage developed along the length of the TWSOA, accurately. A single electrode along the entire length of the device and a single, short length electrode kept at certain distance from the front facet are investigated, for input optical power levels ranging from −25 dBm to +5 dBm. Efficient position of the single electrode along the cavity length is determined for maximum detected voltage. Under this scheme, the inline detector with an electrode length of 100 μm positioned at 200 μm from the front facet, is found to provide a improvement of 6 dB and 8 dB in detected voltage for 40 mA and 50 mA bias respectively, at −10 dBm input, when compared with the maximum detected voltage reported in the literature.     

Glass-clad Cr4+:YAG crystal fiber for the generation of superwideband amplified spontaneous emission

Glass-clad Cr4+:YAG crystal fiber is demonstrated by a codrawing laser-heated pedestal growth method. As much as 2.45 mW of superwideband amplified spontaneous emission (ASE) is generated in the optical fiber communication band with a 3-dB width of 240 nm. The simulation indicates that the ASE power could be in excess of 20 dBm for a 5-microm-diameter core at a pump power of 2.5 W.     

A stabilized tunable dual wavelength erbium-doped fiber laser with equal output power

Tunable dual-wavelength erbium-doped fiber laser with good stability is experimentally demonstrated. Output power of as high as +5.26 dBm is obtained in dual ring configuration. Both laser output can be tuned to as closed as 0.8 nm spacing between each other, with tuning range of 31.33 nm. The stability of both outputs was tested that results in less than ±0.8 dB and ±0.01 nm in power and wavelength fluctuation, respectively.     

Efficient Fibre Amplifiers Based on a Highly Er3＋/Yb3＋ Codoped Phosphate Glass-Fibre

Highly Er3＋ /yb3＋-codoped single-mode phosphate glass fibre is fabricated by the rod-in-tube technique. The performances of high-concentration Er3＋ /yb3＋-codoped phosphate glass fibre amplifiers are investigated and discussed. An efficient optical fibre amplifier with a gain of 12.6 dB based on a 3.0 cm long Era＋ /ybe＋-codoped phosphate glass fibre is demonstrated under a dual-pump configuration with two 976 nm fibre-pigtail laser diodes, which make it attractive for compact Er3＋-doped fibre amplifiers. The obtedned noise figures of signal wavelength from 1525 to 1565nm are less than 6.0dB. Gain saturation behaviour at 1535nm is also investigated, and the obtained saturation output power is larger than 10 dBm.     

S/S+ Band Tunable Thulium Doped Fiber Laser Anchored on 50 GHz ITU-T Grid

We demonstrate a S/S+ band tunable thulium doped fiber laser (TTDFL) anchored on 50GHz ITU-T Grid. Over 57nm of tuning range (1454.9 ～1512.0 nm) covering most of the Thulium bandwidth and more than 8dBm output power has been obtained with the pigtailed solid etalon filter and dual wavelength (1.5μm and 1.4μm ) pumping.     

基于色散位移光纤中四波混频效应的2×40 Gb/s全光3R再生系统

利用色散位移光纤(DSF)中四波混频效应在闲频光波长处增益的指数增长特性及增益饱和特性,提出了一种基于恶化信号抽运的2×40Gb/s的双波长全光3R(再放大、再整形、再定时)再生实验方案。对再生原理做了理论分析和实验验证,完成了1550.92nm和1557.36nm两个波长上不同恶化信号的全光再生实验,将恶化信号的接收机灵敏度分别由-20.3dBm、-20.4dBm改善到-27.3dBm、-25.6dBm,灵敏度改善量为7.0dB和5.2dB。系统实验验证了理论分析的结果,对于解决波分复用(WDM)系统中多路信号的同时再生问题提出了一种可行的解决方案。     

Practical mm-Wave pHEMT Frequency Multiplier

Details on a broadband MMIC frequency doubler targeting the MVDS market are presented. The design evolution from an individual pHEMT device to the complete practical doubler realisation is discussed. The doubler MMIC, which has been fabricated using the GMMT H40 GaAs process, has been evaluated in a customised package. An output power of +10 dBm at 40 GHz has been achieved with an associated conversion gain of 1.5 dB. The measured and predicted performance responses are compared. This chip is ideally suited to use in a number of emerging mm-wave applications.     

Analysis of VCSEL Array Module Using a Simple Microlens Array

A simple microlens array is designed between VCSEL array and fiber array for integration of array module. We increase the optical coupling efficiency from-32.057 dBm to-0.9054 dBm by using our designed microlens array.     

Novel high-sensitivity coherent transceiver for optical DPSK/DQPSK signals based on heterodyne detection and electrical delay interferometer

We present a novel coherent transceiver for optical differential phase-shift keying/differential quadrature phase-shift keying （DPSK/DQPSK） signals based on heterodyne detection and electrical delay interferometer. A simulation framework is provided to predict a theoretical sensitivity level for the reported scheme. High sensitivity of -45.18 dBm is achieved for 2.5-Gb/s return-to-zero （RZ）-DPSK signal, and high sensitivities of -36.83 dBm （I tributary） and -35.90 dBm （Q tributary） are observed for 2.5-GBaud/s RZ-DQPSK signal in back-to-back configuration. Transmission for both signals over 100 km is also investigated. Experimental results are discussed and analyzed.     

Cr:YAG laser pumped erbium-doped fibre amplifier with improved power characteristics

An erbium-doped fibre amplifier has been implemented with a 1.48 μm pumping from a Cr⁴⁺:YAG solid state laser. Record launched pump power of 256 mW and output power of 21.8 dBm with this type of pump laser have been obtained. Results are shown for a broad range of pump wavelength (24 nm) and signal wavelength (70 nm).     

高功率PIN限幅器设计及测试方案

 介绍了利用PIN二极管进行高功率无源限幅器的设计方法,分析了影响限幅器功率容量、限幅电平、尖峰泄露、响应速度及恢复时间等的因素。利用平面微带电路的形式,提出了无源检波式及主动式PIN限幅器设计,仿真结果表明:该无源检波式限幅器起限电平约为-3 dBm,脉冲功率容量60 dBm,限幅电平15 dBm左右。针对设计的限幅器,提出了用于测试限幅器性能的高功率实验平台。该平台采用双路双频耦合测量,具有很高的大小信号隔离度,能够进行高功率脉冲、连续波测试,在准确测量限幅器的功率容量、限幅电平、响应速度及恢复时间等指标方面具有很高的可靠性。     

High-speed, high-power 1.55 μm photodetectors

High-speed, high-power photodetectors are required in 40 Gbit/s front-ends as well as for optic/millimeterwave-conversion in 60 GHz broadband mobile systems. The demand for a high bandwidth maintained up to high power levels is fulfilled by waveguide-integrated p-i-n diodes on InP. These photodetectors exhibit a cutoff frequency above 50 GHz. By monolithic integration of a spot size transformer a responsivity of 0.7 A/W is achieved and the fiber alignment tolerances are increased by one order of magnitude. Linear power behaviour up to +12 dBm at 50 GHz and maximum output voltage swings of 1 V are demonstrated.