Exchange couplings in magnetic films

Recent advances in the study of exchange couplings in magnetic films are introduced.To provide a comprehensive understanding of exchange coupling,we have designed different bilayers,trilayers and multilayers,such as anisotropic hard/soft-magnetic multilayer films,ferromagnetic/antiferromagnetic/ferromagnetic trilayers,[Pt/Co]/NiFe/NiO heterostructures,Co/NiO and Co/NiO/Fe trilayers on an anodic aluminum oxide(AAO) template.The exchange-coupling interaction between soft-and hard-magnetic phases,interlayer and interfacial exchange couplings and magnetic and magnetotransport properties in these magnetic films have been investigated in detail by adjusting the magnetic anisotropy of ferromagnetic layers and by changing the thickness of the spacer layer,ferromagnetic layer,and antiferromagnetic layer.Some particular physical phenomena have been observed and explained.     

Interface reaction of Ta/NiO and its effect on exchange coupling

Ta/NiO/NiFe/Ta multilayers, utilizing Ta as the buffer layer, were prepared by RF reactive and DC magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 120 Oe at a NiO film thickness of 50 nm. The composition and chemical state at the interface region of Ta/NiO/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an `intermixing layer’ at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction: 2Ta+5NiO=5Ni+Ta<sub>2</sub>O<sub>5</sub>. This interface reaction has an effect on the exchange coupling. The thickness of the `intermixing layer’ as estimated by XPS depth-profiles was about 8–10 nm.     

Enhancement of magnetoresistance sensitivity in Co/Cu/NiFe trilayers by softening the Co hard layer

Co/Cu/NiFe trilayers were prepared by sputtering without magnetic field applied. We have found that the Co(2 nm)Cu(1 nm)NiFe(2 nm) trilayer using Ta as buffer layer exhibits an enhanced magnetoresistance (MR) sensitivity by a factor of more than 6 and a low saturation field of 9.3 Oe. Experimental results have demonstrated that the low saturation field is attributed to the softening of the Co layer by depositing the Co(2 nm)Cu(1 nm)NiFe(2 nm) sandwich on Ta layer. The decrease of the coercivity of the Co layer also plays an important role in the enhancement of MR sensitivity by reducing the effective coercivity of the NiFe layer, which is discussed in terms of the change in interlayer coupling.     

NiO-thickness dependent magnetic anisotropies in Fe/NiO/Au(001) and Fe/NiO/MgO(001) systems

The in-plane magnetic anisotropy of Fe/NiO bilayers was studied quantitatively as a function of NiO thickness using the magneto-optical Kerr effect with a rotating field. For NiO thicker than the ordering transition thickness, the total in-plane fourfold anisotropy of the Fe layer decreases with NiO thickness in Fe/NiO/Au(001), but increases in Fe/NiO/MgO(001). Our result indicates that the exchange coupling in an Fe/NiO bilayer might induce an additional in-plane fourfold anisotropy, and the opposite thickness dependent behaviors may be attributed to the different Ni²⁺ antiferromagnetic spin orientations for NiO films grown on Au(001) and MgO(001) surfaces.     

Magnetoresistance and magnetization studies through a Cu interlayer in spin valves of NiFe/Cu/NiFe/FeMn

The influence of the Cu layer thickness on the magnetic and magnetotransport properties has been investigated in Ta/NiFe/Cu/NiFe/FeMn spin valves. The magnetization and magnetoresistance measurements were carried out for magnetic field applied along the easy-axis direction. A phenomenological model, which assumes formation of a planar domain wall at the anti-ferromagnetic side of the interfaces as well as bilinear coupling between the ferromagnetic layers, was used to derive the anisotropy characteristics and orientation of each NiFe layer magnetization. The anisotropy and spin valve magnetoresistance were simulated numerically and compared with the experiment. It was found that the anisotropy magnetoresistance is negligible and that there is a poor agreement for the spin-valve one, which was attributed to the model (valid for ferromagnetic layers in single-domain state only) used for its calculation. It was found that the increase of the Cu layer thickness provokes a decrease of the interdiffusion between the NiFe and FeMn layers, and, as consequence, changes of the uniaxial anisotropy of the pinned NiFe layer, of the exchange interaction between the pinned NiFe layer and the FeMn ones, as well as of the exchange-bias field of the pinned NiFe layer.     

Structural and magnetic properties of ion-beam deposited NiFe/Co-oxide bilayers

The structural and magnetic properties of NiFe/Co-oxide bilayers were studied. XRD investigation indicates the NiFe (Permalloy) layers (a= 3.53 Å) grow with a (111) preferred orientation. The Co-oxide layers were fabricated with oxygen content in the deposition assist beam ranging from 8% (rock-salt CoO, a= 4.27 Å) to 34% (spinel Co3O4, a= 8.21 Å). Both the coercivity Hc and exchange bias field Hex closely follow an inverse NiFe thickness relationship. A strong temperature dependence of Hc and Hex is found in these NiFe/Co-oxide bilayers. At T= 289 K, the NiFe/CoO film exhibits an enhanced Hc relative to pure NiFe/Co or NiFe/Co3O4 bilayers, an indication of exchange coupling between the NiFe and CoO phases. At T= 10 K, the NiFe/Co3O4 film exhibits an exchange-bias loop shift of Hex∼- 200 Oe that persists to temperatures greater than 30 K (the Néel temperature of bulk Co3O4). The transition temperature of the Co3O4 film component has increased above the bulk value via exchange coupling with the permalloy. Results indicate that the exchange coupling interaction between FM and AFM layers are responsible for both enhanced coercivity and cross-tie domains.     

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]₂multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.     

Oscillatory interlayer exchange coupling and its temperature dependence in [Pt/Co]3/NiO/[Co/Pt]3 multilayers with perpendicular anisotropy

Interlayer exchange coupling that oscillates between antiferromagnetic and ferromagnetic as a function of NiO thickness has been observed in [Pt(5 A)/Co(4 A)](3)/NiO(t(NiO) A)/[Co(4 A)/Pt(5 A)](3) multilayers with out-of-plane anisotropy. The period of oscillation corresponds to approximately 2 monolayers of NiO. This oscillatory behavior is possibly attributed to the antiferromagnetic ordering in NiO. The antiferromagnetic interlayer exchange coupling for the 11 A NiO layer shows an increase in coupling strength with increasing temperature, in agreement with the quantum interference model of Bruno for insulating spacer layers. A coexistence of exchange biasing and antiferromagnetic interlayer exchange coupling has been observed below T=250 K.     

Domain size and structure in exchange coupled [Co/Pt]/NiO/[Co/Pt] multilayers

We investigate the competing effects of interlayer exchange coupling and magnetostatic coupling in the magnetic heterostructure ([Co/Pt]/NiO/[Co/Pt]) with perpendicular magnetic anisotropy (PMA). This particular heterostructure is unique among coupled materials with PMA in directly exhibiting both ferromagnetic and antiferromagnetic coupling, oscillating between the two as a function of spacer layer thickness. By systematically tuning the coupling interactions via a wedge-shaped NiO spacer layer, we explore the energetics that dictate magnetic domain formation using high resolution magnetic force microscopy coupled with the magneto-optical Kerr effect. This technique probes the microscopic and macroscopic magnetic behavior as a continuous function of thickness and the interlayer exchange coupling, including the regions where interlayer coupling goes through zero. We see significant changes in domain structure based on the sign of coupling, and also show that magnetic domain size is directly related to the magnitude of the interlayer exchange coupling energy, which generally dominates over the magnetostatic interactions. When magnetostatic interactions become comparable to the interlayer exchange coupling, a delicate interplay between the differing energy contributions is apparent and energy scales are extracted. The results are of intense interest to the magnetic recording industry and also illustrate a relatively new avenue of undiscovered physics, primarily dealing with the delicate balance of energies in the formation of magnetic domains for coupled systems with PMA, defining limits on domain size as well as the interplay between roughness, domains and magnetic coupling.     

In-plane magnetic pattern separation in NiFe/NiO and Co/NiO exchange biased bilayers investigated by magnetic force microscopy

Ion bombardment induced magnetic patterning (IBMP) was used to write in-plane magnetized micro and submicron patterns in exchange biased magnetic bilayers, where the magnetization directions of the adjacent patterns are antiparallel to each other in remanence. These magnetic patterns were investigated by non-contact magnetic force microscopy (MFM). It is shown that the recorded MFM images of the IBMP patterns in two exemplarily chosen standard layer systems (NiFe (4.8 nm)/NiO (68 nm) and Co (4.8 nm)/NiO (68 nm)) can be well described by a model within the point-dipole approximation for the tip magnetization. For 5 and 0.9 μm wide bar patterns the domain wall widths between adjacent magnetically patterned areas were determined to a≈1 μm. The minimum magnetically stable pattern width was estimated to be 0.7 μm in the standard system Co (4.8 nm)/NiO (68 nm).     

Magnetic behaviour investigation on symmetric spin valves of Co／Cu／NiFe and NiFe／Cu／Co

In this paper,we have obtained and investigated the magnetic behaviours of the ferromagnetic layer in the symmetric spin valves of Co/Cu/NiFe and NiFe/Cu/Co by measuring with a vibrating sample magnetometer and analysing in terms of the multi-domain Ising models.It has been found that some magnetic layer can have quite different magnetic behaviours in different structures of spin valves,depending on the properties of the under-layer.In our investigation,we have found that the magnetic behaviour of a Co layer depends mainly on the magnetization of the under-layer,whereas this is not the case for the NiFe layer.     

Microscopic domain structures in unidirectional and isotropic exchange-coupled NiO/NiFe bilayers

The dependence on nickel oxide thickness in unidirectional and isotropic exchange-coupled NiO/NiFe bilayer films was investigated by magnetic force microscopy to better understand exchange biasing at microscopic length scales. As the NiO thickness increased, the domain structure of unidirectional biased films formed smaller and more complex in-plane domains. By contrast, for the isotropically coupled films, large domains generally formed with increasing NiO thickness including a new cross type domain with out-of-plane magnetization orientation. The density of the cross domain is proportional to exchange biasing field, and the fact that the domain mainly originated from the strongest exchange coupled region was confirmed by imaging in an applied external field during a magnetization cycle.     

Exchange coupling effects in NiO/Co and NiO/permalloy bilayers

NiO/Co and NiO/Ni₈₀Fe₂₀ bilayers were prepared at 293 onto SiO₂(1 0 1)/Si(1 1 1) and glass substrates using UHV (5×10⁻¹⁰ mbar) RF/DC magnetron sputtering. Results on magnetic measurements showed that the exchange biasing and coercive fields are inversely proportional to the Co and Ni₈₀Fe₂₀ (Py) layer thickness down to 2 nm. A maximal RT coupling energy for the NiO–Co and NiO–Py interface was estimated as 0.04 and 0.03 mJ/m² for the samples prepared onto SiO₂(1 0 1)/Si(1 1 1) substrates.     

Ferromagnetic resonance study of sputtered Co|Ni multilayers

We report on room temperature ferromagnetic resonance (FMR) studies of [ t Co|2t Ni]  × N sputtered films, where 0.1 ≤ t ≤ 0.6 nm. Two series of films were investigated: films with the same number of Co|Ni bilayer repeats (N = 12), and samples in which the overall magnetic layer thickness is kept constant at 3.6 nm (N = 1.2/t). The FMR measurements were conducted with a high frequency broadband coplanar waveguide up to 50 GHz using a flip-chip method. The resonance field and the full width at half maximum were measured as a function of frequency for the field in-plane and field normal to the plane, and as a function of angle to the plane for several frequencies. For both sets of films, we find evidence for the presence of first and second order anisotropy constants, K₁ and K₂. The anisotropy constants are strongly dependent on the thickness t, and to a lesser extent on the total thickness of the magnetic multilayer. The Landé g-factor increases with decreasing t and is practically independent of the multilayer thickness. The magnetic damping parameter α, estimated from the linear dependence of the linewidth ΔH, on frequency, in the field in-plane geometry, increases with decreasing t. This behaviour is attributed to an enhancement of spin-orbit interactions with decreasing Co layer thickness and in thinner films, to a spin-pumping contribution to the damping.     

Mirror domain structures induced by interlayer magnetic wall coupling

We have found that during giant magnetoresistance measurements in approximately 10 x 10 mm(2) NiFe/Cu/Co continuous film spin-valve structures, the resistance value suddenly drops to its absolute minimum during the NiFe reversal. The results reveal that the alignment of all magnetic domains in the NiFe film follow exactly that of corresponding domains in the Co film for an appropriate applied field strength. This phenomenon is caused by trapping of the NiFe domain walls through the magnetostatic interaction with the Co domain-wall stray fields. Consequently, the interlayer domain-wall coupling induces a mirror domain structure in the magnetic trilayer.     

Investigation of ferromagnetic coupling between Co layers in a Co/Pt multilayer with perpendicular anisotropy

The coercivity of a Co/Pt multilayer with out-of-plane anisotropy can be lowered greatly if it is grown onto an ultrathin NiO underlayer . By making use of this characteristic, a series of samples glass/NiO(10 Å)/[Co(4 Å)/Pt(5 Å)]₃/Pt(x Å)/[Co(4 Å)/Pt(5 Å)]₃ with different Pt spacer thickness have been prepared to determine the ferromagnetic (FM) coupling between Co layers across the Pt layer. The measurements of major and minor hysteresis loops have shown that the FM coupling between the top and bottom Co/Pt multilayers decreases monotonically with the Pt layer thickness and disappears above the Pt layer thickness of 40 Å. This thickness of 40 Å is much larger than that in the literature. In addition to the FM coupling between the top and bottom Co/Pt multilayers across the Pt spacer, there exists a weak biquadratic coupling, which induces the broad transition of the bottom Co/Pt multilayer.     

Magnetoresistance in epitaxial [NiFe/Cu/Co(/Cu)] films

Epitaxial [NiFe/Cu/Co(/Cu)] films have been grown on Si(100)/Cu substrates using an ultrahigh vacuum evaporation method. Magnetoresistance (MR) and magnetization were measured at room temperature with maximum applied field, 40 kA/m. The (100) oriented [NiFe(3 nm)/Cu(6 nm)/Co(3 nm)/Cu(6 nm)] × 10 multilayers showed a sharply peaked MR curve (when the external field was applied along [011] direction) due to magnetization rotation of free NiFe layers separated from Co layers with thick Cu layers. Furthermore the interposition of a Ag layer in the Cu layer reduced the couplings between ferromagnetic layers and improved the sensitivity of the [NiFe/Cu/Co(/Cu)] film. Si(100)/Cu(5 nm)/[Co(3 nm)/Cu(2.4 nm)/Ag(0.2 nm)/Cu(2.4 nm)/NiFe(3 nm)/Cu(2.4 nm)/Ag(0.2 nm)/Cu(2.4 nm)] × 10 multilayers showed a resistivity change of about 8.2% per kA/m (12 Oe).     

Shape and thickness effects on the magnetization reversal of Py/Cu/Co nanostructures

We present an experimental investigation of the magnetization reversal process in NiFe/Cu(10 nm)/Co circular and elliptical nano-elements with different thickness of the magnetic layers. The results obtained using element sensitive X-ray resonant magnetic scattering (XRMS) were compared with the previous measurements showing that the dipolar interlayer coupling favours the antiparallel alignment of the two magnetization layers at remanance. In the case of circular shape, the increased thickness of the ferromagnetic layers stabilizes the antiparallel alignment of the layers over a wider field range. A similar effect, accompanied by a delay in the onset of the antiparallel alignment, is observed in the case of elliptical nano-elements and applying the external field along the longer axis of the elements, due to the additional shape anisotropy.     

Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect

Planar Hall Effect (PHE) in NiFe(t)/IrMn(10.0 nm) thin film structures has been experimentally investigated as a function of NiFe thickness in the range from 3 to 20 nm, under the applied magnetic field perpendicular to the easy axis. The PHE voltage change and its field sensitivity increase with NiFe thickness, but the field interval of two voltage maxima decreases with the thickness. There are good agreements between measured and calculated PHE voltage profiles, where the parameters of exchange-biased and effective anisotropy fields have been characterized to decrease with NiFe thickness. However, an anisotropic resistivity change increases as the NiFe thickness increases. These analyses suggest that PHE is the effective method, inferred to single domain, to determine the electrical and magnetic parameters in magnetic devices.     

Localized spin-wave resonance modes of ferromagnetic microstrips in the field of a magnetic probe

Some results of the micromagnetic modeling of forced magnetization oscillations in planar microstrips of NiFe with easy plane anisotropy and Co/Pt with perpendicular easy axis anisotropy in the field of a magnetic spherical probe are considered. It has been shown that the probe field provokes the appearance of a hedgehog–antivortex coupling state in the NiFe strips, due to its lateral components and a skyrmion magnetization state in the Co/Pt layer. These effects destroy spatial magnetization oscillations in the microstrips and lead to the appearance of additional resonances in the spectrum of oscillations corresponding to the modes localized in the probe field.