A High-Resolution Analysis of the ν3 Absorption Band of Trifluoromethane

A high-resolution (up to 0.0018 cm⁻¹ unapodized) room temperature mid-infrared (650 to 750 cm⁻¹, 13.3 to 15.4 μm) absorption measurement of the ν₃ vibrational band of trifluoromethane (fluoroform, CHF₃, HFC-23) vapor was made with a Fourier transform spectrometer. A rovibrational analysis of over 1400 infrared transitions of the ν₃ band has yielded rotational constants, including sextic centrifugal distortion constants. The results are compared with two previous analyses of microwave and infrared spectra. The line positions of the lower J parts of the ν₃+ν₆−ν₆ and 2ν₃−ν₃ hot bands have been identified and constants obtained for the 2ν₃ state. The central Q branch and a few unblended transitions of the ν₃ band of ¹³CF₃H have been identified and the band origin has been determined. The relative intensities of the ν₃ band together with the 2ν₃−ν₃ hot band and ν₃ band of ¹³CF₃H have been calculated using the constants derived from this work.     

Crystal growth and the electronic structure of Tl3PbCl5

Total and partial densities of states of constituent atoms of two tetragonal phases of Tl₃PbCl₅ (space groups P4₁2₁2 and P4₁) have been calculated using the full potential linearized augmented plane wave (FP-LAPW) method and Korringa-Kohn-Rostoker method within coherent potential approximation (KKR-CPA). The results obtained reveal the similarity of occupations of the valence band and the conduction band in the both tetragonal phases of Tl₃PbCl₅. The FP-LAPW and KKR-CPA data indicate that the valence band of Tl₃PbCl₅ is dominated by contributions of the Cl 3p-like states, which contribute mainly to the top and the central portion of the valence band with also significant contributions throughout the whole valence-band region. Further, the bottom of the valence band of Tl₃PbCl₅ is composed mainly of the Tl 6s-like states, while the bottom of the conduction band is dominated by contributions of the empty Pb 6p-like states. The KKR-CPA results allow to assume that the width of the valence band increases somewhat while band gap, E_g, decreases when changing the crystal structure from P4₁2₁2 to P4₁. The X-ray photoelectron core-level and valence-band spectra for pristine and Ar⁺-ion-irradiated surfaces of a Tl₃PbCl₅ monocrystal grown by the Bridgman-Stockbarger method have been measured.     

Band alignment of Ga2O3/6H-SiC heterojunction

A high-quality Ga₂O₃ thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga₂O₃/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga₂O₃/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga₂O₃/6H-SiC electronic devices.     

The region of the 3ν3 band of methane

The spectrum of methane near 9000 cm^?1, the region of the 3ν₃ band, has been recorded at Meudon Observatory with a Fourier transform spectrometer under high resolution. Intensity measurements at two different temperatures, 149 and 295 K, have allowed us to identify two new vibration bands by determining the lower-state quantum numbers J of the transitions. About 100 lines are now assigned in this range, including P and Q branches. Furthermore, the first detailed rotational analysis of the 3ν₃ band has been made; nine parameters of the band have been determined. The standard deviation of the differences between observed and computed wavenumbers for 45 lines of the 3ν₃ band is only 0.045 cm^?1. It is found that the observed 45 lines of the 3ν₃ band correspond to the sublevel l₃ = 3 and C_v = F₂.     

Band offsets of epitaxial LaAlO3/TiO2 interface determined by X-ray photoelectron spectroscopy

Room-temperature ferromagnetism in doped anatase TiO₂ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase TiO₂ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the TiO₂-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial LaAlO₃/TiO₂ heterojunction on SrTiO₃(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer LaAlO₃ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the LaAlO₃ and TiO₂ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that LaAlO₃ can be an ideal tunneling barrier for TiO₂-based heterojunctions.     

g-C3N4/SnS2异质结构:一类有潜力的光解水催化剂

采用第一性原理方法研究了层间耦合作用对g-C₃N₄/SnS₂异质结构的电子结构和吸光性质的影响.发现g-C₃N₄/SnS₂是一类典型的范德瓦异质结构,能有效吸收可见光,其价带顶和导带底与水的氧化还原势匹配,且由于电荷转移而导致的界面处极化场有利于光生载流子的分离.这些理论研究结果表明g-C₃N₄/SnS₂异质结构是一类非常有潜力的光解水催化材料.     

Luminescence properties of novel NaBa4(BO3)3:Ce, Eu phosphors

Novel Eu³⁺, Ce³⁺ activated NaBa₄(BO₃)₃ phosphors were synthesized by solid-state reactions. The excitation spectrum of NaBa₄(BO₃)₃:Ce³⁺ consists of an intense band peaking at 350 nm and a weak band in the higher energy side, and the emission spectrum exhibits a blue band with a maximum at about 420 nm. The Eu³⁺ emission in NaBa₄(BO₃)₃ consists of the transitions from ⁵D₀ to ⁷F_J, and the excitation spectrum consists of broad excitation band peaking at 270 nm and some intense narrow lines. The optimum doped concentration, the critical distance of the concentration quenching, and the fluorescence lifetime have also been investigated.     

0.5NdAlO3-0.5CaTiO3电子结构及光学性质的第一性原理计算

采用基于第一性原理密度泛函理论的平面波赝势方法,对0.5NdAlO₃-0.5CaTiO₃晶体进行结构优化,并对其能带结构,态密度和光学性质进行了理论计算.结构优化后晶格参数与实验数据相符合,误差小于1%;能带计算结果表明0.5NdAlO₃-0.5CaTiO₃为间接带隙,带隙值为0.52eV;费米面附近的能带由Nd-4f,O-2p,Nd-4p,Al-3p,Ti-4d层的电子态密度确定.同时也计算了该结构的介电函数,反射率和复折射率等光学性质.     

A Combined Frequency Analysis of the ν3, ν9, 3ν4 and the Far-Infrared Bands of Ethane: A Reassessment of the Torsional Parameters for the Ground Vibrational State

The lowest frequency parallel fundamental band ν₃ of ethane is Raman active. A stimulated Raman spectrum of the Q branch for this band at a resolution of 0.0055 cm⁻¹ has been measured by D. Bermejo et al. (1992, J. Chem. Phys.97, 7055). The torsion-rotation series in this band with σ=3, where σ=0, 1, 2, and 3 labels the torsional sublevels, is perturbed by over 1 cm⁻¹. The lowest frequency-degenerate fundamental ν₉ is infrared active. A high-resolution (0.0014 cm⁻¹) Fourier transform spectrum of this band has been measured by N. Moazzen-Ahmadi et al. (1999, J. Chem. Phys.111, 9609). The observed torsional splittings for this band are substantially larger than expected from the observed barrier height. Because of a near-degeneracy of the upper level in the ν₉ band with its interacting partner (v₉=0, v₄=3) a perturbation allowed band 3ν₄ has also been observed. We have carried out a combined analysis of ν₃, ν_9, and 3ν₄ together with the far-infrared torsional spectra in the ground vibrational state (gs). A fit to within the experimental error was achieved using 37 parameters. The large torsional splittings in the ν₉ band are attributed to Coriolis-type interactions between the torsional stacks of gs and v₉=1 whereas the large shift for the torsion-rotation series with σ=3 in the ν₃ band is attributed to Fermi-type interactions between the torsional stacks of the gs and v₃=1. The introduction of the Fermi-type interactions causes a considerable change in the leading terms in the torsional Hamiltonian for the gs. These changes are quantitatively explained.     

Infrared rotation-vibration spectra of ethane: The parallel band, 2ν3, of CH3CD3

The parallel band, 2ν₃, of CH₃CD₃ is measured in the region 2715 to 2780 cm^?1 under a spectral resolution of ～0.025 cm^?1, increased to ～0.015 cm^?1 by deconvolution. About 460 lines are identified in the 2ν₃ band, and about 240 lines in a hot band arising from the first excited torsional state. Least-squares analyses with Δ₂F″ combination differences yield lower-state parameters. An individual subband analysis is undertaken because of perturbations in the vibrational bands studied. Finally, band constants are derived.     

Modulation of strain,electric field and organic cation rotation on the band gap and electronic structures of organic-inorganic hybrid perovskite CH3NH3PbI3

Band gap modulation engineering is an important step in the application of optoelectronic materials. In this paper, the first-principles calculations were carried out to study the influence of strain, external electric field, spatial orientation of organic cation on the band gaps and electronic structures of organic-inorganic hybrid halide perovskites CH₃NH₃PbI₃. The results show that both the uniform strain and the tetragonal deformation can modulate the band gap obviously. The electric field of 0.2 V/Å is the critical point of the band gap modulation. The band gap increases when an electric field is applied from 0 to 0.2 V/Å. The electric field above 0.2 V/Å will cause the band gap to decrease. The spatial orientation of the organic cation also has modulation influence on the band gap of CH₃NH₃PbI₃, but has no effect on the direct semiconductor characteristics. The above results will be helpful to study the band gap modulation of other organic-inorganic hybrid halide perovskites.     

The High-Resolution ν5 Band of Jet-Cooled Si2F6

Vibration-rotation spectra of the parallel ν₅ band of hexafluorodisilane have been measured in a supersonic free jet with 0.001 cm⁻¹ resolution. Three isotopic species, ^28,28Si₂F₆, ^28,29Si₂F₆, and ^28,30Si₂F₆, have been studied. The effect of internal rotation is not observed, indicating that the splitting is smaller than our spectral resolution. A very weak parallel band observed with a slight red shift from the ν₅ fundamental band has been assigned tentatively to the (ν₄ + ν₅)-ν₄ hot band.     

Band alignment regulation of HfO2/SiC heterojunctions induced by PEALD with in situ NH3-plasma passivation

The efficient passivation of in situ NH₃-plasma pre-treatment and its regulation of the band alignment between HfO₂ and 4H-SiC have been investigated by XPS. With in situ NH₃-plasma passivation by PEALD, a VBO of 0.72 eV and a CBO of 1.54 eV can be obtained across the HfO₂/4H-SiC interface. The Si-O bonds components reduction in the passivated interface layers will lead to band bending or band shift at the interface and regulate the band alignments between HfO₂ and 4H-SiC. The physical mechanism investigation of band alignments can be a cornerstone for the application of HfO₂/4H-SiC heterojunctions in the high-power devices.     

A first-principles study of the electronic structure of the sulvanite compounds

We have investigated by means of first-principles total energy calculations the electronic structure of the sulvanite compounds: Cu₃VS₄, Cu₃NbS₄ and Cu₃TaS₄; the later is a possible candidate as a p-type transparent conductor with potential applications in solar cells and electrochromic devices. The calculated electronic structure shows that these compounds are indirect band gap semiconductors, with the valence band maximum located at the R-point and the conduction band minimum located at the X-point. The character of the valence band maximum is dominated by Cu d-states and the character of the conduction band minimum is due to the d-states of the group five elements. From the calculated charge density and electron localisation function we can conclude that the sulvanite compounds are polar covalent semiconductors.     

Band alignment at the In2S3/Cu2ZnSnS4 heterojunction interface investigated by X-ray photoemission spectroscopy

The band alignment at the In₂S₃/Cu₂ZnSnS₄ heterojunction interface is investigated by X-ray photoemission spectroscopy. In₂S₃ is thermally evaporated onto the contamination-free polycrystalline Cu₂ZnSnS₄ surface prepared by magnetron sputtering. The valence band offset is measured to be 0.46 ± 0.1 eV, which matches well with the valance band offset value 0.49 eV calculated using “transitivity” method. The conduction band offset is determined to be 0.82 ± 0.1 eV, indicating a ‘type I’ band alignment at the heterojunction interface.     

Luminescence of neodymium-doped yttria

Pulsed cathodoluminescence of Nd³⁺: Y₂O₃ nanopowders of the cubic and monoclinic phases and the ceramics synthesized from these nanopowders has been investigated in the spectral range 350–850 nm. It is found that the IR emission band of neodymium ions in the Nd³⁺: Y₂O₃ cubic phase is located at λ₁ ≈ 825 nm. When there is a monoclinic phase admixture, two additional luminescence bands of Nd³⁺ arise in the spectrum at λ₂ ≈ 750 nm and λ₃ ≈ 720 nm. The emission spectrum of all Nd³⁺: Y₂O₃ materials also contains a wide intrinsic band of yttrium oxide at λ ≈ 485 nm; however, the presence of neodymium decreases the intensity of this band and increases the its structurization. It is suggested that the structure of this band in Nd³⁺: Y₂O₃ materials is mainly determined by local absorption (self-absorption) of neodymium ions.     

High-resolution infrared spectrum of CH2D2: The ν3 fundamental band at 7 μm

The infrared spectrum of CH₂D₂ has been recorded in the region of 1345 to 1561 cm^?1 with a resolution of 0.030 to 0.026 cm^?1. Most of the observed lines have been assigned to transitions of the ν₃ band of CH₂D₂. However, 114 lines have been identified as transitions of the ν₂ band of H₂¹⁶O whose band origin has been directly determined to be 1594.7472 ± 0.0030 cm^?1. A few weak lines, probably belonging to the ν₅ fundamental of CH₂D₂, remain unassigned. The band center ν = 1435.1326 ± 0.0030 cm^?1 and a set of upper state constants were obtained for the ν₃ band of CH₂D₂. Although a slight perturbation was noticed in the ν₃ band, all wavenumbers have been fitted with a standard deviation of 3.8 × 10^?3 cm^?1.     

Ba0.5Sr0.5TiO3电子结构和光学性质的第一性原理研究

利用第一性原理研究了Ba_0.5Sr_0.5TiO₃的能带结构和光学性质.结果表明,导带和价带都来源于钛原子3d轨道和氧原子2p轨道的杂化.导带主要由钛原子的3d轨道贡献,价带主要由氧原子的2p轨道贡献.吸收系数为10⁵ cm^-1量级,且吸收主要集中在低能区.折射率为n（0）=2.1,结果与实验符合. 关键词： 第一性原理 能带结构 光学性质     

A first-principles investigation of the properties of two predicted novel structures of Sn3P4

Two novel structures of Sn₃P₄ (t-Sn₃P₄ and o-Sn₃P₄) are presented in this study. For two novel phases, t-Sn₃P₄ and o-Sn₃P₄, the stabilities are verified based on the elastic constants and the phonon dispersion spectra. The phonon density of states (PHDOS), band structures, electronic density of states (DOS) and optical properties are investigated using density functional theory (DFT). o-Sn₃P₄ has better plasticity and stronger anisotropy than t-Sn₃P₄. The PHDOS in the lower frequency band is mainly derived from Sn atoms, and in the higher band it is mainly from P atoms. The band structure of t-Sn₃P₄ shows that it is a narrow indirect band gap semiconductor. And o-Sn₃P₄ presents a metallic characteristics. Below the Fermi level, the total DOS in the valence band originates mainly from P ‘p’ with the partial contribution from Sn ‘p’. The dielectric constants, conductivities, optical absorption, optical reflectivity, and energy loss functions of t-Sn₃P₄ and o-Sn₃P₄ are analyzed. For t-Sn₃P₄, the static dielectric constant is 12.66?F/m, the real part of conductivity reaches the maximum at 4.45?eV, and the peak in the loss function locates at about 15?eV. For o-Sn₃P₄, in order, they are 47.27?F/m, at 2.59?eV, and at 10.91?eV.     

Shape of the IR bands of CH4: The CH4-Kr system in different phase states

The IR absorption spectrum of mixtures of CH₄ with Kr in the range 800–6000 cm^?1 is studied in the region of the gas-liquid and liquid-crystal phase transitions. It is found that, as the system density increases, the ratio of the ν₄ band intensity to that of the ν₃ band becomes larger and the measured values of the second spectral moment of the ν₄ band become smaller than the corresponding calculated values. The quantum counterpart of the generalized J-diffusion model was used to describe the shape of the ν₃ and ν₄ bands, and the rotational relaxation times of CH₄ in solutions were obtained. It was shown that, as the density increases, a broad 1470-cm^?1 band appears in the region of the “forbidden” (induced by a Coriolis interaction) ν₂ band (ν_Q=1535 cm^?1) detected in a low-density gas. The intensity of this band is appreciably higher than that of the ν₂ band.