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Band alignment regulation of HfO2/SiC heterojunctions induced by PEALD with in situ NH3-plasma passivation |
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| Authors: | Dawei Xu Li Zheng Xinhong Cheng Gang Wang Qian Wang Wenbo Xin Peiyi Ye Lingyan Shen Yuehui Yu |
| Institution: | 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;3. Department of Microelectronic Science and Engineering, Faculty of Science, Ningbo University, Ningbo 315211, China;4. Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles 90095, USA |
| Abstract: | The efficient passivation of in situ NH3-plasma pre-treatment and its regulation of the band alignment between HfO2 and 4H-SiC have been investigated by XPS. With in situ NH3-plasma passivation by PEALD, a VBO of 0.72 eV and a CBO of 1.54 eV can be obtained across the HfO2/4H-SiC interface. The Si-O bonds components reduction in the passivated interface layers will lead to band bending or band shift at the interface and regulate the band alignments between HfO2 and 4H-SiC. The physical mechanism investigation of band alignments can be a cornerstone for the application of HfO2/4H-SiC heterojunctions in the high-power devices. |
| Keywords: | Corresponding author Band alignment PEALD Thin films Dielectrics |
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