Demonstration of large format mid-wavelength infrared focal plane arrays based on superlattice and BIRD detector structures

We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development of large area mid-wavelength infrared (MWIR) focal plane arrays (FPAs). Barrier infrared photodetectors (BIRDs) and superlattice-based infrared photodetectors are expected to outperform traditional III–V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II–VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb superlattice pin photodiodes and bulk InAsSb structures on GaSb substrates. The coupled quantum well superlattice device offers additional control in wavelength tuning via quantum well sizes and interface composition, while the BIRD structure allows for device fabrication without additional passivation. As a demonstration of the large area imaging capabilities of this technology, we have fabricated mid-wavelength 1024 × 1024 pixels superlattice imaging FPAs and 640 × 512 MWIR arrays based on the BIRD concept. These initial FPA have produced excellent infrared imagery.     

Evolution of array format of longwave infrared Type-II SLS FPAs with high quantum efficiency

In the remarkably short span of 2 years, longwave infrared focal plane arrays (FPAs) of Type-II InAs/GaSb strained layer superlattice (SLS) photodiodes have advanced from 320 × 256 format to 1024 × 1024 format while simultaneously shrinking the pitch from 30 μm to 18 μm. Despite a dark current that is presently higher than state-of-the-art mercury cadmium telluride photodiodes with the same ∼10 μm cutoff wavelength, the high pixel operability and high (∼50%) quantum efficiency of SLS FPAs enable excellent imagery with temporal noise equivalent temperature difference better than 30 mK with F/4 optics, integration time less than 1 ms, and operating temperature of 77 K or colder. We present current FPA performance of this promising sensor technology.     

High performance two-color one megapixel CMOS ROIC for QWIP detectors

FLIR Systems, Inc. has designed and fabricated the ISC0501 CMOS readout integrated circuit (ROIC) for quantum well infrared photodetectors (QWIPs). The ISC0501 is a two-color 1024 × 1024 format array with a 30 μm pixel pitch. The ROIC contains a separate analog signal path for each wavelength band. Separate signal paths allow the two-colors to have optimized detector biases, integration times, offsets and gains. This architecture also allows both colors to simultaneously sample a scene and readout the pixel data. This paper will describe the interface, design and features of the ROIC as well as a summary of the characterization test results. A sample image is included from a focal plane array (FPA) built by the Jet Propulsion Laboratory (JPL) using the ISC0501 ROIC with QWIP detectors designed by JPL.     

C-QWIP focal plane arrays

We have been developing corrugated quantum well infrared photodetector (C-QWIP) technology for long wavelength applications. A number of large format 1024 × 1024 C-QWIP focal plane arrays (FPAs) have been demonstrated. In this paper, we will provide a detailed analysis on the FPA performance in terms of quantum efficiency η and compare it with a detector model. We found excellent agreement between theory and experiment when both the material parameters and the pixel geometry were taken into account. By changing the number of quantum wells, doping density, spectral bandwidth and pixel size, a range of η from 13% to 37% was obtained. This range of η, combined with the wide spectral width, enables C-QWIPs to be operated at a high speed. For example, model analysis shows that a C-QWIP FPA with 10.7 μm cutoff and 25 μm pitch will have a thermal sensitivity of 16 mK at 2 ms integration time with f/2 optics in the presence of 900 readout noise electrons.     

A design study of a triple field of view 8–12 μm waveband airborne FLIR

In this work, a design study of a three field-of-view (FOV) optical system for 8–12 μm imaging using a 288×4 focal plane array detector is presented. The detector pixel size is 25 μm×28 μm. The f/# of the detector is 1.76. In order to switch the FOVs, three different optical configurations are superimposed and all three configurations are optimized. The narrow and medium FOV switching is based on movement of the second negative lens of the afocal system, whereas the wide FOV is selected by inserting a mirror between the 4th and 5th lenses of the afocal system. By inserting a switching mirror, the objective part of the first configuration is blocked out; nevertheless the afocal of the wide FOV is activated. The imager part of the layout is common for all FOVs. Diffractive and aspheric surfaces are utilized to control chromatic and all other kinds of aberrations, reducing the total lens number. The final optical designs, together with their modulation transfer function (MTF) plots, are illustrated, exhibiting excellent performance in all three FOVs. More specifically, the paper emphasizes how the displacement of compensating lenses effect the MTF of the system and how automatic movements of the lenses are used to eliminate the defocusing problem under changing environmental conditions.     

High spatial resolution shortwave infrared imaging technology based on time delay and digital accumulation method

Shortwave infrared (SWIR) imaging technology attracts more and more attention by its fascinating ability of penetrating haze and smoke. For application of spaceborne remote sensing, spatial resolution of SWIR is lower compared with that of visible light (VIS) wavelength. It is difficult to balance between the spatial resolution and signal to noise ratio (SNR). Some conventional methods, such as enlarging aperture of telescope, image motion compensation, and analog time delay and integration (TDI) technology are used to gain SNR. These techniques bring in higher cost of satellite, complexity of system or other negative factors. In this paper, time delay and digital accumulation (TDDA) method is proposed to achieve higher spatial resolution. The method can enhance the SNR and non-uniformity of system theoretically. A prototype of SWIR imager consists of opto-mechanical, 1024 × 128 InGaAs detector, and electronics is designed and integrated to prove TDDA method. Both of measurements and experimental results indicate TDDA method can promote SNR of system approximated of the square root of accumulative stage. The results exhibit that non-uniformity of system is also improved by this approach to some extent. The experiment results are corresponded with the theoretical analysis. Based on the experiments results, it is proved firstly that the goal of 1 m ground sample distance (GSD) in orbit of 500 km is feasible with the TDDA stage of 30 for SWIR waveband (0.9–1.7 μm).     

Imaging quality analysis and evaluation of optical polarization imaging system with optical transfer matrix

An optical transfer matrix (OTM) is introduced and proposed to analyze the performance of optical polarization imaging systems. This 4 × 4 OTM describes the frequency transfer characteristics of the optical system for each Stokes parameter. It includes the transfer functions and the crosstalk functions. The transfer functions can be used to analyze the imaging quality of the system for each polarization component, while crosstalk functions indicate the polarization errors. We calculate the modulation transfer matrix as an example and numerically simulate the Stokes vector imaging for a polarization imaging system with a singlet and rotating polarization elements. The simulated imaging results show conformance with the analysis.     

Enhanced quantum well infrared photodetector focal plane arrays for space applications

A 30 months European Space Agency project started in March 2008, whose overall purpose is to expand and assess the performance of broadband (11–15 μm) quantum detectors for spectro-imaging applications: Dispersive Spectrometers and Fourier Transform Spectrometers. We present here the technical requirements, the development approach chosen as well as preliminary experimental results. Our approach is fully compatible with the final array format (1024 × 256, pitch 50–60 μm). We expect the requested uniformity, operability and SNR levels to be achieved at temperatures close to the goal values. The performance level will be demonstrated on 256 × 256, 50 μm pitch arrays. Also, operability and uniformity issues will be addressed on large mechanical 1024 × 256 hybrid arrays.     

Discrimination methods for biological contaminants in fresh-cut lettuce based on VNIR and NIR hyperspectral imaging

The rapid detection of biological contaminants such as worms in fresh-cut vegetables is necessary to improve the efficiency of visual inspections carried out by workers. Multispectral imaging algorithms were developed using visible-near-infrared (VNIR) and near-infrared (NIR) hyperspectral imaging (HSI) techniques to detect worms in fresh-cut lettuce. The optimal wavebands that can detect worms in fresh-cut lettuce were investigated for each type of HSI using one-way ANOVA. Worm-detection imaging algorithms for VNIR and NIR imaging exhibited prediction accuracies of 97.00% (RI_547/945) and 100.0% (RI_1064/1176, SI_1064-1176, RSI-I_{(1064-1173)/1064}, and RSI-II_{(1064-1176)/(1064+1176)})_, respectively. The two HSI techniques revealed that spectral images with a pixel size of 1 × 1 mm or 2 × 2 mm had the best classification accuracy for worms. The results demonstrate that hyperspectral reflectance imaging techniques have the potential to detect worms in fresh-cut lettuce. Future research relating to this work will focus on a real-time sorting system for lettuce that can simultaneously detect various defects such as browning, worms, and slugs.     

High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(0 1 3)

The characteristics of SWIR (1.6–3 μm) 320 × 256 and 1024 × 1024 focal plane arrays (FPA’s) based on n-type In-doped HgCdTe heteroepitaxial layers are reported. The HgCdTe layers were grown by molecular beam epitaxy on silicon substrates with ZnTe and CdTe buffer layers. p–n junctions were formed by arsenic ion implantation into HgCdTe film. Reverse current in the temperature range from 210 to 330 K was found to be limited by the diffusion mechanism. At the same time in the temperature range from 140 to 210 K the reverse current was dominated by the thermal generation of charge carriers through deep traps located in the middle of the band gap. At 170 K NETD was less than 40 mK.     

A new digital readout integrated circuit (DROIC) with pixel parallel A/D conversion and reduced quantization noise

This paper represents a novel digital readout for infrared focal plane arrays with 2.33 Ge⁻ charge handling capacity while achieving quantization noise of 161 e⁻. Pixel level A/D conversion has been realized by pulse frequency modulation (PFM) technique supported with a novel method utilizing extended integration that eliminates the requirement for an additional column ADC. Digital pixel operates with two phases; the first phase is as ordinary PFM in charge domain and the second phase is in time domain, allowing the fine quantization and low quantization noise. A 32 × 32 prototype has been manufactured and tested. Measured peak SNR at half well fill is 71 dB with significant SNR improvement for low illuminated pixels due to extremely low quantization noise. 32 × 32 ROIC dissipates only 1.1 mW and the figure of merit for power dissipation is measured to be 465 fJ/LSB, compared to 930 fJ/LSB and 1470 fJ/LSB of the state of the art.     

Low pitch LWIR QWIPs: Performance level and image quality

We present recent results obtained on 15 μm pitch LWIR QWIP arrays at Sofradir. Based on experimental data gathered on several QWIP wafers, the performance (NETD) at the system level has been estimated. We show that, in spite of the small pitch, values as low as 50 mK can be achieved for rather closed optical systems (f/2.5) and for operating temperatures (74 K) compatible with available compact cryo-coolers.We also demonstrate that specific pixel configurations can be designed to investigate the pixel-to-pixel optical crosstalk. Such measurements can help to better understand the limitations set by the geometry of the pixel on the Modulation Transfer Function (MTF). In particular, we show that the optical crosstalk due to photon transfer through the inter-pixel space is rather small for unthinned devices.     

InAs/GaSb superlattice infrared detectors

Future heterojunction InAs/GaSb superlattice (SL) detector devices in the long-wavelength infrared regime (LWIR, 8–12 μm) require an accurate bandstructure model and a successful surface passivation. In this study, we have validated the superlattice empirical pseudopotential method developed by Dente and Tilton over a wide range of bandgap energies. Furthermore, dark current data for a novel dielectric surface passivation for LWIR devices is presented. Next, we present a technique for high-resolution, full-wafer mapping of etch pit densities on commercial (1 0 0) GaSb substrates, which allows to study the local correlation between threading dislocations in the substrate and the electro-optical pixel performance. Finally, recent performance data for 384 × 288 dual-color InAs/GaSb superlattice imagers for the mid-wavelength infrared (MWR, 3–5 μm) is given.     

1/f Noise QWIPs and nBn detectors

The low-frequency noise is a ubiquitous phenomenon and the spectral power density of this fluctuation process is inversely proportional to the frequency of the signal. We have measured the 1/f noise of a 640 × 512 pixel quantum well infrared photodetector (QWIP) focal plane array (FPA) with 6.2 μm peak wavelength. Our experimental observations show that this QWIP FPA’s 1/f noise corner frequency is about 0.1 mHz. With this kind of low frequency stability, QWIPs could unveil a new class of infrared applications that have never been imagined before. Furthermore, we present the results from a similar 1/f noise measurement of bulk InAsSb absorber (lattice matched to GaSb substrate) nBn detector array with 4.0 μm cutoff wavelength.     

Airborne infrared fire detection optical system with tilted porthole

Thermal infrared imagery techniques have been applied in the field of wild land fire management for many years. A kind of infrared system with a tilted porthole conformal to the ellipsoid prow underside the plane nose is presented. This design increases the range of the inner imaging system, reduces air drag and protects against damage. The paper analyzes the aberration characteristic of a tilted ellipsoid porthole, and brings forward an effective corrective solution to make the system achieve a ? 30° to ? 90° field of regard with an instantaneous ± 4° field of view. The ultimate performance indicates that the infrared optical system has met the detection requirements.     

Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays

We have demonstrated 384 × 288 pixels mid-wavelength infrared focal plane arrays (FPA) using type II InAs/GaSb superlattice (T2SL) photodetectors with pitch of 25 μm. Two p-i-n T2SL samples were grown by molecular beam epitaxy with both GaAs-like and InSb-like interface. The diode chips were realized by pixel isolation with both dry etching and wet etching method, and passivation with SiN_x layer. The device one with 50% cutoff wavelength of 4.1 μm shows NETD ∼ 18 mK from 77 K to 100 K. The NETD of the other device with 50% cutoff wavelength at 5.6 μm is 10 mK at 77 K. Finally, the T2SL FPA shows high quality imaging capability at the temperature ranging from 80 K to 100 K which demonstrates the devices’ good temperature performance.     

110 °C range athermalization of wavefront coding infrared imaging systems

110 °C range athermalization is significant but difficult for designing infrared imaging systems. Our wavefront coding athermalized infrared imaging system adopts an optical phase mask with less manufacturing errors and a decoding method based on shrinkage function. The qualitative experiments prove that our wavefront coding athermalized infrared imaging system has three prominent merits: (1) working well over a temperature range of 110 °C; (2) extending the focal depth up to 15.2 times; (3) achieving a decoded image being approximate to its corresponding in-focus infrared image, with a mean structural similarity index (MSSIM) value greater than 0.85.     

Quick response PZT/P(VDF-TrFE) composite film pyroelectric infrared sensor with patterned polyimide thermal isolation layer

The fabrication method and the pyroelectric response of a single element infrared sensor based lead zirconate titanate (PZT) particles and polyvinylidene fluoride P(VDF-TrFE) copolymer composite thick film is reported in this paper. A special thermal insulation structure, including polyimide (PI) thermal insulation layer and thermal insulation tanks, was used in this device. The thermal insulation tanks were fabricated by laser micro-etching technique. Voltage responsivity (R_V), noise voltage (V_noise), noise equivalent power (NEP), and detectivity (D^*) of the PZT/P(VDF-TrFE) based infrared sensor are 1.2 × 10³ V/W, 1.25 × 10⁻⁶ V Hz^1/2, 1.1 × 10⁻⁹ W and 1.9 × 10⁸ cm Hz^1/2 W⁻¹ at 137.3 Hz modulation frequency, respectively. The thermal time constant of the infrared sensor τ_T was about 15 ms. The results demonstrate that the composite infrared sensor show a high detectivity at high chopper frequency, which is an essential advantage in infrared detectors and some other devices.     

A long-range,high-resolution optical coherence tomography for physical and environmental measurements

Optical coherence tomography (OCT) is an emerging optical imaging technique that is applied with low coherence interference to perform noninvasive, high-resolution images on internal and surface structures. In this study, we built an optical coherence system and developed a combined envelope-fringe and carrier-fringe technique that can take advantage of high-resolution and long-range for taking physical and environmental measurements. The proposed system demonstrated that the detection resolution of the changes of the refractive index was 1.89 × 10^? 4 for the long-range set-up (i.e. using the envelope-fringe only), and 4.15 × 10^? 5 for the high-resolution set-up (i.e. using the carrier-fringe). In addition, we successfully applied the system to measure the refractive index of a body of water, as the index for determining the pollution condition of different lakes.