Generation of dislocations introduced by bending stress in a Si wafer

Distribution and morphology for dislocations introduced in (001) Si wafers subjected to bending stress at 800°, 900°, and 1100°C were investigated. For wafers bent around a [110] axis at 900° and 1100°C, straight dislocations appeared along the [110] direction only near the neutral plane, and were absent at the surfaces where bending stress is greatest. However, for wafers bent at 800 °C, such straight dislocations were not formed. Dependence of the dislocation distribution and morphology on heat treatment temperature is explained on the basis of interaction between bending stress and SiO₂ precipitates introduced in bulk. Also, it was found that the straight [110] dislocations remained still near the neutral plane, even when additional reverse bending stress was applied around an axis parallel to the dislocations, but were transfered toward the tensile surface by bending around an axis normal to the dislocation direction.     

Magnetostriction of Fe81Ga19 oriented crystals

The effect of the orientation on the magnetostriction in Fe 81 Ga 19 alloy has been investigated experimentally and theoretically.The Fe 81 Ga 19 [001] and [110] oriented crystals were prepared and the magnetostriction was measured under different pre-stress.The saturation magnetostriction of the [001] oriented crystal increases from 170×10-6 to 330×10-6 under the pre-stress from 0 to 50 MPa.The [110] oriented crystal has a saturation magnetostriction from 20×10-6 to 140×10-6 with the compressive pre-stress from 0 to 40 MPa.The magnetostriction of [001] and [110] oriented crystals has been simulated based on the phenomenological theory.The domain rotation path has been determined and the resultant magnetostriction calculated under different pre-stress.The experimental and simulated results both show that the [001] oriented crystal exhibits better magnetostriction than [110] oriented crystal.The enhancement of the saturation magnetostriction by the compressive pre-stress in the [110] oriented crystal is higher than that in the [001] oriented crystal.     

Ge中束缚施主电子的自旋共振及其各向异性线宽

本文利用Ge中浅施主杂质的有效质量波函数,计算了束缚电子的等效自旋哈密顿量,得到在没有外压力及内应力情况下,仅当Ge的导带极值偏离(2π)/α[111]点时,共振频率才是各向导性的。指出通过电子-核双共振实验可能较确切的判断Ge中导带极值的位置。利用畸变势理论及微扰论,计算了在一般缓变的非均匀内应力作用下,共振频率及自旋共振线宽随磁场方向的各向异性变化。最后具体计算了在以拉伸法生长的晶体中和在弯曲的范性形变下,在最主要的位错类型([211]方向刃型及[110]方向螺型位错)应力场作用下自旋共振线宽的非均匀加宽,指出对于不同类型及不同取向的位错有不同的各向异性线宽。与Wilson的实验结果比较,我们得到当位错密度小于10⁴εcm^-2时,位错应力不是形成线宽的主要原因,当磁场在不同的(110)平面内旋转时,线宽将有相似的各向异性。当位错密度大于10⁵εcm^-2时,位错应力对线宽的贡献是主要的。这很容易由实验判断。     

Peierls–Nabarro model for dislocations in MgSiO3 post-perovskite calculated at 120 GPa from first principles

We present here the first numerical modelling of dislocations in MgSiO₃ post-perovskite at 120?GPa. The dislocation core structures and properties are calculated through the Peierls–Nabarro model using the generalized stacking fault (GSF) results as a starting model. The GSFs are determined from first-principle calculations using the VASP code. Dislocation properties such as planar core spreading and Peierls stresses are determined for the following slip systems: [100](010), [100](001), [100](011), [001](010), [001](110), [001](100), [010](100), [010](001), ½[110](001) and ½[110](110). Our results confirm that the MgSiO₃ post-perovskite is a very anisotropic phase with a plasticity dominated by dislocation glide in the (010) plane.     

Monazite (monoclinic LaPO4) slip systems at room temperature

Polycrystalline monazite (monoclinic LaPO₄) was deformed by spherical indentation at room temperature. Slip systems were identified using TEM of thin sections prepared parallel and close to the indented surface. Dislocation Burgers vectors (b) were identified by Burgers circuit closure in high resolution TEM images, supplemented by diffraction contrast where possible. A total of 441 b determinations were made in 97 grains. The most common slip systems were [001]/(010), [100]/(010) and [010]/(100). Slip on (001) was less common. Many other less common slip systems and Burgers vectors were also identified, including b = [101], [101], [011], [110] and [111]. b = [101] dislocations dissociate into ½[101] partials, and b = [101] dislocations are inferred to dissociate to ½[101] partials, with a low energy stacking fault of ～30 mJ/m². b = [100] dislocations may dissociate into ¼[210] + ¼[210] partials. b = [010] may sometimes dissociate to ½[010] + ½[010] partials. Other types of partial dislocations were also observed and discussed. All partial dislocations were climb dissociated. The line energies of monazite dislocations and their partials were calculated, and stacking fault structures for partial dislocations are analyzed. Satisfaction of the Von Mises criterion for full ductility most likely involves [101]/(111) and ?011?/{011} or {111} slip, but other combinations that require both b = [101] and ?011? or ?110? are possible. If deformation twinning is active, slip systems with b = ?011? or ?110? may not be necessary for full ductility.     

Hydrogen diffusion in the elastic fields of dislocations in iron

The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 10¹⁴ m^–2 in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems 〈111〉{110}, 〈111〉{112}, 〈100〉{100}, and 〈100〉{110} are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2〈111〉) or do not affect it (in the case of dislocations with the Burgers vector being 〈100〉). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores.     

Disorders produced during high-current and high-dose phosphorus ion implantation in silicon

Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×10¹⁶ions/cm²) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.     

冷轧铜板再结晶織构的形成

电解纯铜经88.7％冷轧后,所形成的轧制织构除稳定的(110)[112]舆(112)[111]外,还存在着一种(3,6,11)[533]织构。在较低温度下退火时,再结晶织构主要为(100)[001]、(358)[352]和舆(100)[001]成孪生取向的(122)[212]织构。随着退火温度的增加,(358)[352]织构逐渐减弱,立方织构(100)[001]则逐渐加强;当退火温度达到900℃时,开成了集中的(100)[001]织构。冷轧铜板在退火的过程中,具有(100)[001]再结晶晶粒首先形成,然后普遍地发生同位再结晶。其中具有(100)[001]取向的晶粒,继续发生选择性的生长,最后形成了集中的立方织构。本支中对轧制织构舆其再结晶织构取向间的关系也进行了分析,再结晶织构一般可认为是原有织构沿某一个[111]轴旋转45°,22°或38°的结果。同时,根据上述几何关系所绘出的理想极图舆实际测定的结果也是符合的。试验结果指出,不同加热速度和不同加热程序对形成最终的再结晶织构,不发生显著的影响,而退火温度对再结晶织构的形成起着主要的作用。     

Intermediate temperature creep mechanisms in Ni 3 Al

The intermediate-temperature creep response of single-crystal Ni 3 Al(Ta) has been investigated along both [ ] and [001] axial orientations. The effect of the existing deformation structure (i.e. pre-straining) on the [ ] creep response was reported. The creep responses of virgin specimens and specimens prestrained at room temperature (RT) and 520°C are compared. In order to compare the dislocation structures prior to creep, the microstructure of specimens which had been deformed at a constant strain rate at RT and 520°C, but not subjected to creep, was also examined. Creep curves show that the temperature of pre-strain influences the subsequent creep properties. The primary creep response, like the yielding response, appears to be controlled by the kink size distribution, while the secondary creep response is thought to be controlled by the kink separation (or the length of the Kear-Wilsdorf locks). Specimens crept along [ ] display steady state creep properties and rectangularly oriented [ ](010) dislocations, while a virgin specimen crept along [001] displays an increasing secondary creep rate (inverse creep) and d110 ¢{100}-type dislocations. Inverse creep along [001] is thought to be the result of an increasing density of edge kink octahedral sources where there is little resolved shear stress on the cube planes.     

SrTiO3(110) thin films grown directly on different oriented silicon substrates

We have grown (110)-oriented SrTiO₃ (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ–2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[11̄0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers. PACS 77.55.+f; 68.55.JK; 81.15Fg     

Leed studies of vicinal surfaces of silicon

Clean silicon surfaces inclined at small angles to (111), (100) and (110) planes were investigated by LEED. Surfaces oriented at low angles to the (111) plane contain steps with edges towards [2̄11] or [21̄1̄]. Steps with edges towards [2̄11] have a height of two interplanar distances d₁₁₁ at low temperatures. At 800°C the reversible reconstruction of this step array into the steps of monolayer height takes place. Steps with edges towards [21̄1̄] can be seen at low temperatures only. They are of monolayer height and disappear at annealing in vacuum. Surfaces oriented at low angles to the (100) plane contain steps with (100) terraces and have a height of about two interplanar distances d₁₀₀. Surfaces at low angles to (110) planes are facetted and contain facets of the (47 35 7) type. The information about surface self-diffusion of silicon may be obtained using the kinetic data of structural reconstructions on surfaces close to (111) at different temperatures.     

Impurity redistribution during laser irradiation in ion implanted silicon

(100) Silicon wafers implanted with 2 × 10^{15 31}P+/cm² at 100 keV have been annealed using a scanning beam of incoherent light. The main results obtained after annealing are: (a) the carrier concentration profile shows a complete dopant activation without diffusion of the implanted ions; (b) the values of carrier mobility are similar to those obtained by furnace annealing; (c) an improvement of minority carrier diffusion length is often observed; (d) a very good damage recovery is obtained. Transmission Electron Microscopy observations show that the residual damage is confined within a region at 0.2 μm depth and consists of dislocation loops of about 50 Å diameter. It is concluded that this technique can be used to obtain very good annealing of implanted layers.     

Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

It is shown for (111) and (001) interfaces that at an identical degree of strain relaxation in semi-conductor epitaxial films, the ratio of distances D between neighboring dislocations is D ₍₁₁₁₎/D ₍₀₀₁₎ = 1.5. This allows us to establish that dislocation interface (7 7 10) contains partial 90° Shockley dislocations lying in three directions of 〈110〉.     

Influence of Cr<Superscript>+</Superscript> ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi<Subscript>2</Subscript>/Si(111) heterostructures

The effect of pulsed ion-beam annealing on the surface morphology, structure, and composition of single-crystal Si(111) wafers implanted by chromium ions with a dose varying from 6 × 10¹⁵ to 6 × 10¹⁶ cm⁻² and on subsequent growth of silicon is investigated for the first time. It is found that pulsed ion-beam annealing causes chromium atom redistribution in the surface layer of the silicon and precipitation of the polycrystalline chromium disilicide (CrSi₂) phase. It is shown that the ultrahigh-vacuum cleaning of the silicon wafers at 850°C upon implantation and pulsed ion-beam annealing provides an atomically clean surface with a developed relief. The growth of silicon by molecular beam epitaxy generates oriented 3D silicon islands, which coalesce at a layer thickness of 100 nm and an implantation dose of 10¹⁶ cm⁻². At higher implantation doses, the silicon layer grows polycrystalline. As follows from Raman scattering data and optical reflectance spectroscopy data, semiconducting CrSi₂ precipitates arise inside the silicon substrate, which diffuse toward its surface during growth.     

Orientation dependence of oxygen adsorption on a cylindrical GaAs sample: I. Auger measurements

The orientation dependence of oxygen adsorption has been investigated by AES on the surface of a cylindrically shaped GaAs single crystal with [111&#x0304;0] being its axis. It thus exposes the main low index orientations (001), (111)Ga, (110), and (111&#x0304;)As, as well as all their vicinal surfaces and intermediate orientations on its surface. It is shown that it is possible to prepare all these orientations simultaneously and with reasonable quality by ion bombardment and annealing (IBA). The orientation dependence of the amount of adsorbed oxygen in the range (001)(111)Ga(110)(111&#x0304;)As can be understood in terms of different sticking coefficients on the different types of terrace site and of enhanced adsorption on edge-adjacent sites. These edge-adjacent sites show saturation at about 4 × 10⁵ L. Starting from (110) towards (111)Ga, at first, steps one atomic layer high are found, changing to a height of two layers when approaching (331). This behaviour can be understood in terms of the known relaxation on (110). A deep minimum in the amount of adsorbed oxygen between (111&#x0304;)As and (001&#x0304;) is interpreted to be due to an As stabilized low sticking coefficient phase between (112&#x0304;) and (113&#x0304;). Early saturation (at～10⁵ L) on (001) and (111&#x0304;)As is consistent with the fact that these surfaces usually do not reach their room temperature equilibrium phase upon preparation by IBA. Sudden and accidental oxygen induced composition changes towards As-richer substrate compositions further confirm this.     

集中力作用下硅中位错结构

本文用化学侵蚀法研究了硅单晶样品在800—1000℃印压得到的位错“花结”。实验结果说明:印压产生的位错分布在{111}滑移面上;位错线的取向大部分是<110>或<112>方向。分析并观察到在压印下有两种位错环,一种是柏格斯矢量沿<110>方向并平行于(111)印压面;一种是柏格斯矢量沿<110>方向并与印压面相交。对位错环的结构进行了分析。     

Threading dislocations in GaAs on Si grown with ∼1 nm thick Si interlayers

Threading dislocation morphologies and characteristics have been investigated in 3 m thick GaAs films with ultrathin (1 nm) Si interlayers grown by molecular beam epitaxy on tilted (2° toward [110]) Si (001) substrates using cross-sectional transmission electron microscopy. Four sample structures are studied in which different numbers of ultrathin Si layers are grown at different positions in the GaAs film, and the results are compared for samples observed before and after ex situ annealing. In all of the sample structures, some mixed-type dislocations are clearly blocked by the Si interlayers, although some of them pass through these layers, resulting in propagation of their threading dislocations to the sample surface. After annealing at 900 °C for 10 s or 800 °C for 30 min, the interactions of the dislocations with the interlayers are enhanced, and there is an increase in the number of dislocations which are bent along the 110 directions at the positions of the Si barrier layers. However, a considerable number of dislocations still escape from the Si barriers by gliding on {111} slip planes during annealing. Moreover, ex situ annealing generates new edge-type dislocations through interactions between moving threading dislocations. The nature of the dislocations that cross the Si barriers is especially discussed.     

Al表面的"类液"结构及其自扩散通道

应用分子动力学方法,采用嵌入势模型在熔点下和熔点上对Al(001),(110)和(111)表面的原子结构和自扩散现象进行研究.发现这些表面的第一层原子在低于熔点时,Al(110)面在700±10 K,Al(001)面在 860±10 K,Al(111)面在 930±10 K呈现明显自扩散且最终转变为"类液"结构,而其余各层仍保留有序状态.对这种"类液"结构进行均方位移、结构有序参数、径向分布函数和z向粒子密度分析,发现其结构和扩散行为与熔化的Al表面不同,并能在一定温度区间稳定存在.在"类液 关键词： 表面结构 分子动力学 自扩散     

Studies of threading dislocations in Nb(011) films

We obtain strain contrast in low-energy electron microscopy, by dark-field imaging of the strain-sensitive variants of a surface reconstruction. This is employed to make visible the strain fields of dislocations in Nb(011) thin single-crystal films. The strain field symmetries reveal the dislocation Burgers vectors and identify the existence of [111] a /2 and [100] a Burgers vectors for threading dislocations in these epitaxial materials. The contrast also allows interfacial and screw dislocations to be imaged.