Femtosecond first-order autocorrelation measurement based one-photon induced photocurrent in Si Schottky diodes

Si Schottky diodes promise to provide cheap, reliable, and linear detectors for use in femtosecond and picosecond pulse width measurement. At low pulse excitation density (<100 pJ/cm²), the pulse width can be deduced from the first-order autocorrelation, and the measured results are in agreement with the theoretical ones. When pulse excitation density is larger than 1 nJ/cm², the pulse trailing edge is distorted due to bandgap reduction in semiconductor Si and the pulse width cannot be measured accurately by means of the first-order autocorrelation. The interference fringes presented in the first-order autocorrelation measurement can provide a way of calibrating the delay, and the pulse width can also be obtained by calculating the number of interference fringes.     

Soliton compression and pulse-train generation by use of microchip Q-switched pulses in Bragg gratings

Pulse compression and pulse-train generation are demonstrated by use of kilowatt 580 ps pulses generated by a compact (15 cm x 3 cm x 3 cm) microchip Q-switched laser followed by a fiber Bragg grating. A 12-fold pulse compression to 45 ps with five times peak power enhancement is achieved at 1.4 kW through soliton effect compression in the fiber grating. At 2.5 kW, modulational instability leads to a train of high-contrast sub-100 ps pulses. These demonstrations take advantage of the ultrastrong dispersion at frequencies close to the edge of the photonic bandgap. Experimental results are discussed in the context of the nonlinear Schr?dinger equation and are compared with simulations of the nonlinear coupled-mode equations.     

Tuning the electronic properties of hydrogen passivated C3N nanoribbons through van der Waals stacking

The two-dimensional (2D) C₃N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C₃N via stacking or forming nanoribbon, bandgap modulation of bilayer C₃N nanoribbons (C₃NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C₃N by cutting it into hydrogen passivated C₃NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C₃NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C₃NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C₃NNRs are larger than that of C₃N nanosheet. More interestingly, AC-C₃NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C₃NNR, the bandgaps of bilayer C₃NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C₃N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices.     

A Bragg-like chirped clad all-solid microstructured optical fiber with ultra-wide bandwidth for short pulse delivery and pulse reshaping

Chirped cladding is proposed as a novel tailoring tool to simultaneously attain wider transmission window and reduced temporal dispersion in an all-solid Bragg-like microstructured optical fiber as compared to its perfectly periodic cladding counterpart. This design route for photonic bandgap microstructured fibers could be exploited as an additional degree of freedom for bandgap engineering. A suitably chirped clad fiber could be gainfully exploited to deliver femto-second pulse with ultra wide bandwidth. Further, generation of self-similar parabolic profile pulse is demonstrated by simulating propagation of an input Gaussian pulse through a 2 m long sample of such a linearly tapered Bragg like fiber.     

Nonlinear interaction between two different photonic bandgaps of a hybrid photonic crystal fiber

Nonlinear interaction between spectral components in two different photonic bandgaps is experimentally demonstrated by launching femtosecond pulses near a zero-dispersion wavelength of a hybrid photonic crystal fiber, which guides by a combination of total internal reflection and bandgap effects. It is demonstrated that the initial pulse becomes spectrally broadened, and narrowband resonant radiation is generated in a different bandgap from the one responsible for guiding at the pump wavelength. The spectral intensity of the resonant radiation peaks at 2.7 dB below that of the broadened pulse in the pump-guiding bandgap.     

Pulse shortening and quality improvement based on spectral filtering in a stretched-pulse mode-locked fiber laser with large third-order dispersion

We demonstrate a passively mode-locked ring fiber laser operating in the stretched-pulse regime. The ring cavity model is constructed with standard single-mode fiber and dispersion delay line for dispersion management. Here, all-solid Yb-doped photonic bandgap fiber is used as the dispersion delay line and provides laser gain simultaneously. As the all-solid Yb-doped photonic bandgap fiber has large third-order dispersion, it is necessary to study its impact on the stretched-pulse operation. The presence of the third-order dispersion reduces pulse quality because of the relatively small group velocity dispersion. To improve the pulse quality, a spectral filter is employed in the model. The simulation results show that spectral filtering could improve the pulse quality and shorten the pulse duration. Meanwhile, the optimum filter bandwidth is studied.     

Absence of dislocation-induced luminescence in GaAs

Photoluminescence measurements on highly deformed GaAs samples in the near band edge region as well as in the region far below the bandgap are reported. The radiative recombination gives no evidence for dislocation-induced states in the energy gap.     

Dynamic control of photonic bandgap mediated by vacuum-induced coherence

We theoretically examine the storage and retrieval of a light pulse in a medium comprised of four-level atoms of the V − Λ-type. The two intermediate levels are probed by a weak field and vacuum-induced coherence effects lead the system to transparency. The temporal variation of the intermediate levels' splitting is used as an external parameter which allows the transfer of the impinging field to a combination of spin coherences. An auxiliary and far-detuned control field in a standing-wave configuration is used to induce a variable photonic bandgap by cross-phase modulation. It is shown that dynamic control of such a bandgap can be used to coherently manipulate the previously stored probe pulse. We use a general scheme to take into account multiwave mixing effects and solve the combined Maxwell-Bloch equations for the relevant coherences. It is shown that the system acts as an all-optical router.     

热可调液晶填充微结构聚合物光纤设计及特性分析

通过在微结构聚合物光纤(mPOF)的包层空气孔中填充液晶材料获得了高度热可调的带隙型mPOF. 带隙随温度的增加发生显著的蓝移, 带隙上边界的温度灵敏度可达-5.5 nm/℃. 采用全矢量有限元方法对模场特性以及基模有效模场面积的分析结果表明, 该填充液晶的mPOF在带隙的中心波长附近具有大的有效模场面积, 和相同结构未填充液晶的mPOF连接时具有较高的功率耦合效率. 研究结论为mPOF在温度传感领域的应用及各种可调光纤器件的制备提供了理论参考.     

Formation of a reflected wave under propagation of a pulse with high peak intensity through a Kerr medium

Propagation through a Kerr medium of short pulses depending only on the longitudinal coordinate is investigated. High values of the peak intensity are considered for which the nonlinear part of the relative permittivity is on the order of unity. When a short pulse propagates through such a medium, the leading edge of the pulse is extended, while the trailing edge runs into the slowly propagating central part of the pulse; shock waves are generated at the trailing edge, giving rise to high spatial frequencies and backward reflected radiation. The duration of the pulse increases due to the high-frequency jet that forms at the trailing edge, and the peak intensity decreases. The spectrum of the backward reflected radiation is investigated as a function of the peak intensity of the pulse and the characteristics of the time dispersion of the medium.     

Modulating the bandgaps of graphdiyne nanoribbons by transverse electric fields

The effect of external transverse electric fields on the bandgaps of graphdiyne nanoribbons is investigated from first-principles calculations. The giant Stark effect is observed in the ribbons. When the field is applied, the valence and conduction band edge states are found to be strongly localized at low and high potential edges of the ribbon, respectively. Due to the wavefunction localization, the bandgap decreases with increasing field strength, and a semiconductor-metal transition occurs below a threshold field value. It is also shown that the bandgap decreasing rate depends linearly on the ribbon width. The tunable bandgap of a graphdiyne nanoribbon under an electric field would be helpful for practical applications.     

Picosecond pump-probe measurement of bandgap changes in SiO2/TiO2 one-dimensional photonic bandgap structures

A picosecond pump-probe nonlinear optical measurement is performed in SiO2/TiO2 one-dimensional photonic bandgap structures fabricated by a solgel method. Both high and low band edges were examined by varying the probe wavelengths and angle tuning was also employed to further clarify the mechanism of a nonlinear optical response. The third-order nonlinear optical response in one-dimensional photonic bandgap structures that comprise TiO2 films is responsible for the nonlinear optical transmissions at both bandgap edges, with an 8% decrease at the low-energy edge and a 4.5% increase at the high-energy edge for a 355 nm pump intensity of 430 MW/cm2.     

具有表面波完全极化禁带的平面特异材料的定向辐射效应

从理论和实验上研究了镂有三角晶格小孔阵列的金属薄板表面波禁带行为,通过改变小孔直径以及其他几何参数,发现三角晶格是表面波完全极化禁带产生的原因。利用该表面波完全禁带实现了点源的定向辐射。通过测量放在该平板表面的偶极子天线辐射源的远场方向图,观测到在表面波完全禁带里面,远场方向图的E面和H面半高宽分别只有5.6°和6.2°。     

TiO2/SiO2的表面化学修饰及其DRS和Raman光谱分析

以氯化醇钛盐表面反应法制备系列TiO2/SiO2,根据XRD,Raman和DRS表征分析,载体表面具有分子级分散的锐钛矿型TiO2微晶粒子和非晶TiOx物种.与本体TiO2相比,TiO2/SiO2的吸收带边显著蓝移,能隙增大为3.96 eV.当金属M(M:Pd,Cu和Ni)负载于TiO2/SiO2表面,可使其光吸收域扩展到可见光区,并引起吸收带边红移.相对Pd的负载,Cu,Ni的负载对TiO2/SiO2的LMCT带影响更大,其中Cu-TiO2/SiO2的能隙减小为3.68 eV.当金属氧化物MoO3负载于TiO2/SiO2上时,可以调变TiO2/SiO2的吸收带边并增强对可见光的吸收;随MoO3载量的增加,表面物种的相互作用增强,形成Mo-O-Ti复合结构,增强了LMCT带的吸收强度,并使能隙减小为3.81 eV.     

Influence of detuning on the spontaneous emission of a driven four-level atom embedded in photonic crystals

We study the spontaneous emission of a four-level atom with two transitions coupled to a reservoir that has a photonic bandgap near the band edge. Moreover, the transition from the upper level to an auxiliary level is driven by a laser. Considering the different detuning of the external driving field, we discuss some effects, such as a laser-induced dark line, a laser-induced line splitting, and a laser-induced pushing of a dressed state out of the bandgap, which originate from the quantum interference effect and control of the external driving field.     

3D photonic crystals based on macroporous silicon: Towards a large complete photonic bandgap

Recently, a new three-dimensional photonic crystal consisting of two interpenetrating hexagonal pore sets was introduced. Here, we investigate the influence of possible experimental errors including shift, tilt and rotation of one pore set on the size of the bandgap theoretically and determine fabrication tolerances. A structure is fabricated in silicon using photo-electrochemical etching and subsequent focused ion beam milling. The change of the cross-section of the milled pores with pore depth is investigated and reflection measurements along different directions are performed indicating the low frequency edge of the photonic bandgap.     

锗硅量子阱结构带间吸收边研究

利用光电流谱的方法对锗硅量子阱结构的带间吸收边进行了研究.实验观察到了在不同的偏压和温度下,锗硅量子阱结构的带间吸收边谱线发生了有规律的变化.通过对锗硅量子阱材料的光电流谱的带间跃迁吸收边的拟合,得到了硅导带到锗价带的能带宽度分别为1.043 eV和1.050 eV.随着外加电场的增强,带边的吸收曲线向低能方向移动.通过理论计算得到了带间跃迁吸收边的漂移量与外加电场的关系,并与实验吻合较好.随着温度的降低,带间吸收边向高能方向偏移,对于这一现象给出了定性的解释,并通过拟合得到了禁带宽度随温度的变化率.     

Exact confined eigenstates in one-dimensional finite periodic systems with arbitrary symmetric basis

A set of eigenenergy equations for complete confinement of N periodic one-dimensional system with arbitrary symmetric potential in each cell is presented. Exact eigenenergies and their eigenfunctions are solved analytically. We find different solutions on the band edge states comparing early results solved by conventional methods. Our results show that higher band edge state of each bandgap is dependent on the confined length, but lower band edge state is independent of the length. Moreover, wavefunctions for lower band edge states are Bloch waves but those for other eigenstates, including higher band edge states, do not obey Bloch waves.     

振放双池受激布里渊散射相位共轭镜的脉冲波形研究

受激布里渊散射应用到激光驱动器中，就要考虑脉冲的变形。针对上升前沿２ｎｓ的毫 秒泵浦脉冲，在其脉冲前沿根部引入缓慢上升的的预脉冲后，研究振放双池受激布里渊散射相位共轭镜所产生的受激布里渊散射脉冲波形。