准一维有机超导体(TMTSF)_2ClO_4的高精度温差电动势研究

测量了准一维有机超导体 (TMTSF) 2 ClO4 单晶a方向不同降温速率下的高精度温差电动势 (6— 2 80K) .高温下的温差电动势表现出线性行为 ,不能被正常的一维电子能带理论所解释 .在 2 4 0K左右观察到温差电动势斜率发生反常突变 .在 14 0K左右温差电动势向下逐渐偏离线性行为 ,这与 1D— 2D的维度渡越相关 .对阴离子有序—无序相变温度Ta(Ta=2 4K)附近的温差电动势结果与比热和电阻率的数据进行了比较 .对于极慢速降温的温差电动势 ,求导后可以看到相变的痕迹 .随着通过Ta 降温速率的增大 ,在Ta 之下的温差电动势数值出现了一个逐渐增大的整体抬高 .对此进行了讨论 .     

La2CuO4掺锌样品的低温电阻率与热导率研究

对La2CuO4掺锌样品在不同降温速率下(330K保温30min后,分别以6Kh和02Ks的速率冷却至42K)电阻率(42—330K)和热导率(80—300K)随温度的变化关系进行了研究.实验结果表明,在不同降温速率下,热导率和电阻率都受到很大影响.快速降温过程使得130K以上的热导率减小,而热导率最小值出现在130K,且与降温速率无关.而低温下的热导率不受降温速率变化的影响.样品在高温区(T高于125K)电阻率随降温速率的增大而增大,低温区电阻率的非线性行为可用变程跳跃行为来描述.所有样品的热导率和电阻率在反铁磁相变温度都没有出现反常,这与能带理论框架下预期的结果和Anderson电荷自旋分离理论发生了矛盾,对此进行了讨论,并用极化子理论进行了自洽解释. 关键词： La2CuO4 热导率 电阻率     

Tb4O7掺杂的WO3陶瓷的高温热电现象

采用传统的固相烧结技术，制备Tb₄O₇掺杂的WO₃陶瓷. 测量了其高温热电行为，发现样品升温和降温时相变分别出现在350℃和270℃，有80℃的热滞.并且样品在500℃的恒定温度下有稳定的电能输出，这种现象用现有的温差电效应和热(释)电效应理论都不能解释.这是一种新的热电效应，利用它有可能找到热能—电能转换的新途径. 关键词： 3陶瓷')" href="#">WO₃陶瓷 热电转换 相变 热释电     

混合场中 (Pr1－yNdy)2/3Sr1/3MnO3体系磁转变行为研究

对(Pr1-yNdy)2/3Sr1/3MnO3(y=2/8,4/8,6/8)体系在42K—300K温度范围内混合场（即交流驱动场Hac与附加直流磁场H dc的叠加）下的磁转变行为进行了系统的实验研究. 结果表明，随着外加直流磁场强 度的增大，样品的直流磁化强度增大，交流磁化率逐渐减小；在混合场作用下，磁转变温度 （居里温度）附近样品交流磁化率的实部出现一个特征的尖峰. 对于(Pr1-yNdy)2/3Sr1/3MnO3体系，随着Nd掺杂量的增加，交流磁化率实部 的相对变化 (Eχ′=Δχ′/χ′dc)的峰值对应的温度降低，这一点与该系 统的磁电阻的变化规律一致. 对锰氧化物体系在混合场中的磁转变现象进行了讨论. 关键词： 锰氧化物 混合场 磁特性     

K3C60在200K附近的取向相变机理

研究了K₃C₆₀单晶薄膜在200K附近的导带结构.样品温度为190K时,同步辐射角分辨光电子谱能够观察到[111]方向有规律的能带色散.而在220K附近色散不存在.这一实验结果与K₃C₆₀在200K存在取向相变相符合.用反铁磁Ising模型对实验结果进行了分析.结果表明,K₃C₆₀在200K的相变是由低温下的一维无序取向结构转变为200K以上的双取向结构畴与无序分子(约占40 关键词： 3C₆₀')" href="#">K₃C₆₀ 取向相变机理     

金属间化合物DyMn2Ge2的自发磁相变和场诱导的磁相变

在10—800K的温度范围内用X射线衍射方法测量了DyMn₂Ge₂化合物的晶格常数与温度的变化关系,观察到高温时DyMn₂Ge₂由顺磁状态到反铁磁状态的自发磁相变伴随着晶格常数a的负的磁弹性异常现象.在4.2K—200K的温度范围内测量了DyMn₂Ge₂的交流磁化率.在交换相互作用的分子场模型近似下,从理论上分析讨论了DyMn₂Ge₂的低温自发磁相变和场诱导的磁相变.计算了DyMn₂Ge₂单晶的磁化强度与温度的变化关系以及不同温度下外磁场沿晶轴c方向时的磁化曲线.理论分析和计算结果表明,温度低于33K时在DyMn₂Ge₂中观察到的场诱导的一级磁相变为由亚铁磁状态(Fi)到中间态(IS)相变. 关键词： 稀土-过渡族金属间化合物 磁结构 磁相变     

超巨磁电阻材料Pr2/3Sr1/3MnO3薄膜输运性质的研究

对1/f噪声缺口的超巨磁电阻Pr_2/3Sr_1/3MnO₃薄膜样品从10K到室温的热电势值进行了测量，热电势为负值，低温下随温度线性变化，表现为金属扩散热电势，在150K开始急剧减小，过渡到与温度T成反比的变化关系，与小极化子模型相符.结合在电阻极大温度附近对电阻和1/f噪声行为的讨论，对于发生在电阻极大温度附近的相变过程，结果支持源于相分离的渝渗模型. 关键词： 稀土锰氧化物 热电势 渝渗模型     

Bi系中Pb的替代及其超导电性

分析了不同的降温速率对名义的 Bi_(1.7)Pb_(0.3)Sr_2Ga_2Cu_3O_y 样品的超导行为的影响,认为Pb 的替代并不能导致其 T_c 的提高,相反会有可能将原来的110K 相变成 100K 相,将原来的85K 相变成为72K 相,110K 相和100K 相以及85K 相和72K 相之间的结构框架没有本质的差别,所不同的是 Pb 在其中占据的位置,降温速率对其超导行为的影响可能是由于 Pb 在其中占据位置的有序分布的不同所致.     

Zn掺杂La2CuO4热电势和磁化率研究

测量了La2CuO4掺Zn样品在不同降温速率下(330K保温05h,然后分别以6Kh,02Ks的速度降到8K)的直流磁化率和热电势.实验结果表明,反铁磁温度TN不随降温速率变化而变化,其直流磁化率也未受很大影响.高温热电势弱的温度依赖关系表明为极化子气体的贡献.热电势在转折温度Tdrop之下的快速降低是由于二维反铁磁涨落的贡献.热电势在更低温度的拐点TS与载流子的局域化有关.降温速率变化时,Tdrop和TS都有明显的变化.Zn掺杂对Tdrop和TS没有明显影响,但导致了更强的载流子局域化.讨论了上述现象产生的物理图像 关键词： La2CuO4 直流磁化率 热电势     

单晶NdMnO3的比热研究

研究了低温下NdMnO₃单晶的比热随温度和磁场的变化(2K≤T≤200K，0T≤H≤8T ).对应于 Mn磁矩亚晶格的A型反铁磁(A-AF)相变，零场下的比热曲线在85K附近出现尖锐的λ形峰，随 着磁场的增加，此λ峰降低展宽而且平滑变化，这与此温度附近磁化强度的变化规律一致. 与磁有序相变相关的熵变约为理论值的26％，这可能是由于磁有序涨落延续在较大温区造成 的.在20K以下，比热曲线出现了明显的肩膀形状的Schottky反常，其峰值随着磁场的增加而 逐渐向高温移动.考虑了低温下比热的各种贡献，根据Nd³⁺位有效分子场(H _mf) 引起的Nd^3＋基态双重态(GSD)劈裂对上述现象进行了解释.通过对2K≤T≤2 0K，0Ｔ≤ H≤8T范围内比热数据的拟合，得到了样品的GSD劈裂，德拜温度和A-AF自旋波劲度系数以及 它们对磁场的依赖关系.发现GdFeO₃型八面体旋转引起的A-AF结构中Mn磁矩亚晶 格的铁磁成分可能是H_mf的来源. 关键词： 比热 Schottky反常 反铁磁相变     

Electronic transport and specific heat of 1T-V Se2

The low-temperature thermoelectric power and the specific heat of 1T-V Se₂ (vanadium diselenide) have been reported along with the electrical resistivity and Hall coefficient of the compound. The charge density wave (CDW) transition is observed near 110 K in all these properties. The thermoelectric power has been measured from 15 K to 300 K, spanning the incommensurate and commensurate CDW regions. We observed a weak anomaly at the CDW transition for the first time in the specific heat of V Se₂. The linear temperature dependence of the resistivity and thermoelectric power at higher temperatures suggests a normal metallic behavior and electron–phonon scattering above the CDW transition. The positive thermoelectric power and negative Hall coefficient along with strongly temperature-dependent behavior in the CDW phase suggest a mixed conduction related to the strongly hybridized s–p–d bands in this compound.     

Electrical transport properties of CuS single crystals

Electrical resistivity, transverse magnetoresistance and thermoelectric power measurements were performed on CuS high quality single crystals in the range 1.2-300 K and under fields of up to 16 T. The zero field resistivity data are well described below 55 K by a quasi-2D model, consistent with a carrier confinement at lower temperatures, before the transition to the superconducting state. The transverse magnetoresistance develops mainly below 30 K and attains values as large as 470% for a 16 T field at 5 K, this behaviour being ascribed to a band effect mechanism, with a possible magnetic field induced DOS change at the Fermi level. The transverse magnetoresistance shows no signs of saturation, following a power law with field Δρ/ρ(0) ∝ H(1.4), suggesting the existence of open orbits for carriers at the Fermi surface. The thermoelectric power shows an unusual temperature dependence, probably as a result of the complex band structure of CuS.     

Thermoelectric power of HfTe5 and ZrTe5

The thermoelectric power and the electrical resistance of the two low-dimensional conductors, HfTe₅ and ZrTe₅ have been measured over the temperature range of 7K to 380K. The thermoelectric power for both materials is large and positive at high temperatures and then drops precipitously and crosses zero at the temperature of the anomalous resistivity peak, T_p. At lower temperatures, the thermoelectric power reaches a large negative peak and then decreases to zero in a metallic fashion. The abrupt change in thermopower, which occurs at T_p for both materials, is indicative of a phase transition where the carrier type changes from hole-like to electron-like.     

Thermoelectric properties of a plasma at megabar pressures

A nonideal hydrogen plasma is theoretically studied for the first time as the working medium of a thermoelectric generator. A method is proposed for the calculation of the electrical conductivity, Seebeck coefficient, and thermal conductivity of the nonideal plasma in a wide range of densities and temperatures, including the region of strong degeneracy of electrons, which is achieved in experiments on the quasi-isentropic compression of deuterium and where a “plasma phase transition” (transition with a sharp change in the component composition) is possibly implemented. In this method, the kinetic coefficients are calculated together with the equation of states of the nonideal plasma. It is shown for the first time that the Seebeck coefficient in such a medium reaches 5500 μV/(K cm), which is an order of magnitude larger than that in currently available semiconductor materials used in thermoelectric generators. It is found that the figure of merit in hydrogen, which has a high thermal conductivity, at megabar pressures reaches 0.4, which is only slightly below that in currently available semiconductor materials.     

The thermoelectric power of the metallic glass Ca0.8Al0.2

We report the first measurement of the thermoelectric power Q, of a metallic glass that contains only normal metals. The thermoelectric power of amorphous Ca_0.8Al_0.2 has been measured as a function of temperature from 10 K to 420 K. It is found that Q is positive, varies linearly with temperature and has a small slope. This is similar to the thermoelectric power found for other metallic glasses containing large concentrations of transition metal atoms.     

Reprint of : Three-terminal heat engine and refrigerator based on superlattices

We propose a three-terminal heat engine based on semiconductor superlattices for energy harvesting. The periodicity of the superlattice structure creates an energy miniband, giving an energy window for allowed electron transport. We find that this device delivers a large power, nearly twice than the heat engine based on quantum wells, with a small reduction of efficiency. This engine also works as a refrigerator in a different regime of the system's parameters. The thermoelectric performance of the refrigerator is analyzed, including the cooling power and coefficient of performance in the optimized condition. We also calculate phonon heat current through the system and explore the reduction of phonon heat current compared to the bulk material. The direct phonon heat current is negligible at low temperatures, but dominates over the electronic at room temperature and we discuss ways to reduce it.     

Thermoelectric power and its magnetic field dependence in pure Sb at low temperatures

The temperature dependence of the thermoelectric power of pure Sb measured along the binary axis is presented in the temperature interval of 4·2-30°K. The intervalley scattering of carriers strongly affects the thermoelectric behaviour of Sb above 15°K whereas below 15°K the phonon drag effect is found to contribute to the thermoelectric power of Sb. The magnetic field dependence of the thermoelectric power up to fields of 8000 G is investigated. The low field behaviour of the thermoelectric power below 15°K is observed to be in good accord with the theoretical calculations. At high fields the thermoelectric power is observed to be negative at temperatures below 15°K.     

Facile synthesis of nanostructured n-type SiGe alloys with enhanced thermoelectric performance using rapid solidification employing melt spinning followed by spark plasma sintering

SiGe alloy is widely used thermoelectric materials for high temperature thermoelectric generator applications. However, its high thermoelectric performance has been thus far realized only in alloys synthesized employing mechanical alloying techniques, which are time-consuming and employ several materials processing steps. In the current study, for the first time, we report an enhanced thermoelectric figure-of-merit (ZT) ∼ 1.1 at 900 °C in n-type Si₈₀Ge₂₀ nano-alloys, synthesized using a facile and up-scalable methodology consisting of rapid solidification at high optimized cooling rate ∼ 3.4 × 10⁷ K/s, employing melt spinning followed by spark plasma sintering of the resulting nano-crystalline melt-spun ribbons. This enhancement in ZT > 20% over its bulk counterpart, owes its origin to the nano-crystalline microstructure formed at high cooling rates, which results in crystallite size ∼7 nm leading to high density of grain boundaries, which scatter heat-carrying phonons. This abundant scattering resulted in a very low thermal conductivity ∼2.1 Wm⁻¹K⁻¹, which corresponds to ∼50% reduction over its bulk counterpart and is amongst the lowest reported thus far in n-type SiGe alloys. The synthesized samples were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy, based on which the enhancement in their thermoelectric performance has been discussed.     

Transport properties of silicon

Electrical conductivity, thermal conductivity, and thermoelectric power of single-crystalline silicon are investigated at temperatures between 2 and 300 K. From the measured data we calculate the mean free path of electrons and phonons and separate diffusion part and phonon-drag part of the thermoelectric power. Using a new method, we evaluate the mean free path of those phonons which are responsible for the phonon drag effect.Dedicated to H.-J. Queisser on the occasion of his 60th birthday