Light hole transport in a strained GaAs/In0.18Ga0.82As quantum well at high pressures

Abstract

Here we report what we believe to be the first observation of the pressure dependence of the light hole behavior in a modulation doped In_0.18Ga_0.82As/GaAs single strained quantum well grown by MBE. Transport measurements have been undertaken as a function of temperature (4–300K) and hydrostatic pressure (4–8kbar). Hole mobilities of ～17000 cm²/Vs have been obtained for sheet carrier densities of ～3.3×10¹¹ cm^?2. At low temperatures (<100K) persistent photogenerated holes have been observed. The hole mobility is found to decrease with increasing pressure at a rate intermediate between that typically observed for holes and electrons in bulk III-V semiconductors.     

Ionization mechanisms of aluminum acceptor impurity in silicon

Processes of ionization of shallow acceptor centers (ACs) in silicon are studied. In crystalline silicon samples with phosphorus (1.6×10¹³, 2.7×10¹³, and 2.3×10¹⁵cm^?3) and boron (1.3×10¹⁵cm^?3) impurities, _μAl impurity atoms were produced by implantation of negative muons. It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ?10¹⁵cm^?3 at T>45 K. The thermal ionization rate of Al ACs in Si varies from ～10⁵ to ～10⁶s^?1 in the temperature range 45–55 K.     

Effect of pressure on the properties of DH diode lasers in AlxGa1-xAsySb1-y/GaSb system

Abstract

A helium pressure appparatus for diode laser studies up to 1.4 GPa at 77–300 K has been developed. DH lasers with Al_xGa_1-xAs_ySb_1-y active layers (x=0-0.05) lattice-matched to GaSb substrates have been investigated. It has been shown that in lasers with x,y=0 pressure dependences of the threshold current density (J_th) and the average electron lifetime at the threshold (τ) measured at 80 K depend strongly on the quadratic recombination of L^c ₆ electrons, the characteristic coefficient being 1.5×10^?11 cm³s^?1. The pressure-composition equivalence coefficient dx/dP=2.2×10^?10 Pa^?1 has been obtained for the lowest temperatures used.     

Electrical properties of n-type vapor-grown gallium nitride

Hall measurements are reported for undoped and Zn-doped vapor-grown single crystal GaN on (0001) Al₂O₃ layers with 298 K carrier concentrations (n-type) between 1·4×10¹⁷cm^?3 and 9×10¹⁹ cm^?3. Then n～10¹⁷ cm^?3 crystals (undoped) have mobilities up to μ～440 cm²/V sec at 298 K. Their conduction behavior can be described by a two-donor model between 150 and 1225 K and by impurity band transport below 150 K. Crystals with n≥8×10¹⁸ cm^?3 show metallic conduction with no appreciable variation in n or μ between 10 and 298 K.Results of mass spectrographic analyses indicate that the total level of impurities detected is too low to account for the observed electron concentration at the n～10¹⁹ cm^?3 level, and suggest the presence of a high concentration of native donors in these crystals. No significant reduction in carrier concentration was achieved with Zn doping up to concentrations of ～10²⁰ cm^?3 under the growth conditions of the present work, and no evidence was found to indicate that high conductivity p-type behavior may be achieved in GaN. The influence of factors such as growth rate, crystalline perfection and vapor phase composition during growth on the properties of the layers is described.     

Absorption of Dy3+ and Nd3+ ions in BaR 2F8 single crystals

The Dy³⁺ absorption and excitation spectra of BaY₂F₈ and BaYb₂F₈ single crystals are investigated in the ultraviolet, vacuum ultraviolet, and visible ranges at a temperature of 300 K. These crystals exhibit intense broad absorption bands due to the spin-allowed 4f-5d transitions in the range (56–78) × 10^?3 cm^?1 and less intense absorption bands that correspond to the spin-forbidden transitions in the range (50–56) × 10^?3 cm^?1. The Nd³⁺ absorption spectra of BaY₂F₈ single crystals are studied in the range (34–82) × 10^?3 cm^?1 at 300 K for different crystal orientations.     

Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

Optical spectra and electrical conductivity of silicon-doped epitaxial gallium nitride layers with uncompensated donor concentrations N _D — N _A up to 4.8 × 10¹⁹ cm^?3 at T ≈ 5 K have been studied. As follows from the current-voltage characteristics, at a doping level of ～3 × 10¹⁸ cm^?3 an impurity band is formed and an increase of donor concentration by one more order of magnitude leads to the merging of the impurity band with the conduction band. The transformation of exciton reflection spectra suggests that the formation of the impurity band triggers effective exciton screening at low temperatures. In a sample with N _D — N _A = 3.4 × 10¹⁸ cm^?3, luminescence spectra are still produced by radiation of free and bound excitons. In a sample with N _D — N _A = 4.8 × 10¹⁹ cm^?3, Coulomb interaction is already completely suppressed, with the luminescence spectrum consisting of bands deriving from impurity-band-valence band and conduction-band-valence band radiative transitions.     

The effect of uniaxial static pressure on the behavior of an aluminum acceptor impurity in silicon

The effect of uniaxial compression on the behavior of shallow aluminum acceptor centers in silicon has been studied. The _μAl impurity atoms were created by implanting negative muons into silicon single crystals doped with phosphorus to 1.6×10¹³ cm^?3 (sample 1) and 1.9×10¹³ cm^?3 (sample 2). The muon polarization was studied in the temperature range 10–300 K. Measurements were performed in a magnetic field of 2.5 kG oriented perpendicularly to the muon spin. The samples were oriented so that the selected crystal axis ([111] and [100] in samples 1 and 2, respectively), the magnetic field, and the initial muon-spin polarization were mutually perpendicular. External pressure applied to the sample along the indicated crystal axis changed both the absolute value of the acceptor magnetic-moment relaxation rate and the character of its temperature dependence.     

Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon

Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 ¹⁹ cm ^?3 ) and boron (4.1×10 ¹⁸ , 1.34×10 ¹⁹ , and 4.9×10 ¹⁹ cm ^?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ～10 ¹⁷ cm ^?3 , the relaxation rate ν of the magnetic moment of a _μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 ¹⁹ cm ^?3 ) depends on temperature as ν～T ^q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ _h ) and electrons (σ _e ) from an Al acceptor center in Si: σ _h ～10^?13 cm² and σ _e ～8×10^?15 cm² at the acceptor (donor) impurity concentration n _a (n _d )～4×10¹⁸ cm^?3.     

Absolute coverage and isostemc heat of adsorption of deuterium on Pt(111) studied by nuclear microanalysis

The absolute coverage (θ) of deuterium adsorbed on Pt(111) in the ranges 180< T<440 K and 5 × 10^?6 < P < 5 × 10^?2 Pa D₂ has been determined by nuclear microanalysis using the D(³He, p)⁴He reaction. From these data, the isosteric heat of adsorption (E_a) has been determined to be 67 ± 7 kJ mol^?1 at θ ? 0.3. This heat of adsorption yields values of the pre-exponential for desorption (10^?5 to 10^?2 cm² atom^?1 s^?1) that lie much closer to the normal range for a second order process than those determined from previous isosteric heat measurements. The E_a versus θ relationship indicates that the adsorbed D atoms are mobile and that there is a repulsive interaction of 6–8 kJ mol^?1 at nearest neighbour distances. At 300 K the coverage decreases to ? 0.05 monolayer (? 8 × 10¹³ D atoms cm^?2) as P→ 0, apparently invalidating a recent model of site exchange in the adsorbed layer.     

Calibration of the R ruby fluorescence lines in the pressure range [0-1 GPa] and the temperature range [250-300 K]

Abstract

The pressure range [&1 GPa] and the temperature range [250–300 K] are commonly used in many science fields like biology, agro-chemistry, pharmacology, or geology. In this paper, the calibration of the ruby R lines of fluorescence is performed in these pressure and temperature ranges, using the melting curve of pure water. The linear shifts of ruby peaks are equal to ?0.140cm^?1/K and ?0.768cm^?1/kbar with R₁, and to ?0.137cm^?1/K and ?0.779 cm^?1/kbar with R₂. The accuracy of pressure measurements can be as good as ± 10MPa if the temperature is known with ±0.5 K. Such a precision is achieved if: (1) the position of each peak is determined using an inversion method; (2) daily shifts of the spectrometer are corrected before each acquisition; (3) peak positions of each ruby are known at ambient pressure and temperature.     

Minimum metallic conductivity in a thin crystal

Electrical conductivities of thin crystals of Bi₂(Te,S)₃ measured from 4.2°K to 300°K fall into four regions: 1) σ < 1.3×10^?5 S with positive temperature coefficient of conductivity; 2) 1.3×10^?5 S < σ < 1.4×10^?5 S with temperature independent conductivity; 3) 1.4×10^?5 S σ < 4×10^?5 S with negative temperature coefficient of conductivity, and 4) σ > 4×10^?5 S with hardly any temperature dependence. A disproportionately high fraction of samples falls into the second range; 1.3×10^?5 S < σ < 1.4×10^?5 S.     

Ionic conductivity of lithium nitride doped with hydrogen

Lithium ionic conductivity of Li₃N single crystals is reported for temperatures from 120 K to 350 K. The intrinsic ionic conductivity is rather small (< 10^?6 Ω^?1 cm^?1 at 300 K) and shows no strong anisotropy. The activation energy is near 0,6 eV. It is shown that hydrogen is the critical impurity in the crystals grown and studied at this laboratory. The relative impurity concentration is determined from infrared transmission measurements near 3130 cm^?1. An estimate for absolute values is obtained from dielectric studies. Increases in ionic conductivity with hydrogen doping by a factor 5000 are reported for E⊥c but no significant effects are found for E6c. The proposed defect is an impurity-vacancy complex consisting of an NH^?? and a lithium vacancy.     

Interactions of μAl acceptor impurity in weakly and heavily doped silicon

The interactions of the aluminum acceptor impurity in silicon are investigated using polarized negative muons. The polarization of negative muons is studied as a function of temperature on crystalline silicon samples with phosphorus (1.6×10¹³ cm^?3) and boron (4.1×10¹⁸ cm^?3) impurities. The measurements are performed in a magnetic field of 4.1 kG perpendicular to the muon spin, in the temperature range from 4 to 300 K. The experimental results show that, in phosphorus-doped n-type silicon, an _μAl acceptor center is ionized in the temperature range T>50 K. For boron-doped silicon, the temperature dependence of the shift of the muon spin precession frequency is found to deviate from the 1/T Curie law in the temperature range T ? 50 K. The interactions of a _μAl acceptor that may be responsible for the effects observed in the experiment are analyzed.     

The gas phase oxidation of HCOOH by Cl and NH2 radicals. Proton coupled electron transfer versus hydrogen atom transfer*

ABSTRACT

The reaction of formic acid (HCOOH) with chlorine atom and amidogen radical (NH₂) have been investigated using high level theoretical methods such BH&HLYP, MP2, QCISD, and CCSD(T) with the 6–311?+?G(2df,2p), aug-cc-pVTZ, aug-cc-pVQZ and extrapolation to CBS basis sets. The abstraction of the acidic and formyl hydrogen atoms of the acid by the two radicals has been considered, and the different reactions proceed either by a proton coupled electron transfer (pcet) and hydrogen atom transfer (hat) mechanisms. Our calculated rate constant at 298?K for the reaction with Cl is 1.14?×?10^?13?cm³?molecule^?1?s^?1 in good agreement with the experimental value 1.8?±?0.12/2.0?×?10^?13?cm³?molecule^?1?s^?1 and the reaction proceeds exclusively by abstraction of the formyl hydrogen atom, via hat mechanism, producing HOCO+ClH. The calculated rate constant, at 298?K, for the reaction with NH₂ is 1.71?×?10^?15?cm³?molecule^?1?s^?1, and the reaction goes through the abstraction of the acidic hydrogen atom, via a pcet mechanism, leading to the formation of HCOO+NH₃.     

Thermodynamic properties of the CeSn3 mixed valence compound

We have measured on the CeSn₃ compound, the expansion coefficient between 80 and 800 K at normal pressure, the isothermal compressibility in the 0–8 GPa pressure range at room temperature and the heat capacity at constant pressure in the 60–300 K temperature range. The experimental data were compared with those previously found for the isomorphous LaSn₃ phase, assumed as a proper reference material for the study of the intermediate valency states in CeSn₃. Both the thermal expansion (3α) and the isothermal compressibility (k) of CeSn₃ show behaviours quite different from those of LaSn₃: for instance, in the standard conditions, 3α is 55 × 10^?6K^?1for CeSn₃ and 38 × 10^?6K^?1for LaSn₃; k is 15 × 10^?12 Pa^?1 and 12 × 10^?12 Pa^?1 respectively for CeSn₃ and LaSn₃. The thermal behaviour of the molar specific heat at constant pressure of CeSn₃ is similar to that of LaSn₃ for temperatures lower than 50 K. In the 70–300 K temperature range, the heat capacity of CeSn₃ is clearly higher than that of LaSn₃, ΔC_p being maximum near 150 K. The analysis of the calorimetric data show that the electronic coefficient γ of CeSn₃ is temperature dependent: its value varies from 53 mJ K^?2 mole^?1 at low temperature 24 mJ K^?2 mole^?1 at 300 K.     

Far infrared optical properties of NbSe3

We have measured the far infrared reflectance of NbSe₃ and used models of the frequency dependent conductivity to fit the data. General arguments show that at 2 K a charge density wave (CDW) energy gap exists between 120 and 190 cm^?1, the relaxation time(s) of the free carriers and CDW pinned mode is >30×10^?12 s, and the ratio of the free carrier concentration to band mass is <2×10²⁰ cm^?3/m₀.     

Quasi-elastic neutron scattering of benzene in Na-mordenite

The rotational and translational dynamics of benzene adsorbed in Na-mordenite have been studied by incoherent quasi-elastic neutron scattering. The measurements were performed at two benzene coverages at 300, 400 and 450 K. The observed quasi-elastic broadenings are described by a uniaxial rotational model about the six-fold axis of benzene. The mean time between successive jumps, at 300 K, is τ=1.45 × 10^?12 s at low coverage and 2.05×10^?12 s at high coverage. The correlation times follow an Arrhenius law with E_A=4.51 kJ mol^?1, at both coverages. The translational diffusion coefficient has been measured at 300 K and was found to be 0.67 × 10^?6 cm²s^?1.     

硅的低温电学性质

本文在20°—300°K研究了室温载流子浓度2×10¹²—1×10²⁰cm^-3含硼或磷(砷)Si的电学性质。对一些p-Si样品用弱场横向磁阻法及杂质激活能法进行了补偿度的测定,并进行了比较。从霍尔系数与温度关系的分析指出,对于较纯样品,硼受主能级的电离能为0.045eV,磷施主能级为0.045eV,在载流子浓度为10¹⁸—10¹⁹cm^-3时发现了费米简并,对载流子浓度为2×10¹⁷—1×10¹⁸cm^-3的p-Si及5×10¹⁷—4×10¹⁸cm^-3的n-Si观察到了杂质电导行为。从霍尔系数与电导率计算了非本征的霍尔迁移率。在100°—300°K间,晶格散射迁移率μ满足关系式AT^-a,其中A=2.1×10⁹,α=2.7(对空穴);或A=1.2×10⁸,α=2.0(对电子)。另外,根据我们的材料(载流子浓度在5×10¹¹—5×10²⁰cm^-3间),分别建立了一条电阻率与载流子浓度及电阻率与迁移率的关系曲线,以提供制备材料时参考之用。     

EHD-photoluminescence kinetics in doped Ge

Measurements of the LA-phonon assisted line kinetics of the EHD photoluminescence in As- and Sb-doped germanium with impurity concentrations n_D = 10¹⁵ ? 10¹⁷ cm^?3 are presented. These kinetics are found to be strongly dependent on the excitation level at 4.2 K. From the experimental results and a simplified kinetic equation the EHD “diffusion length” in Ge:As sample with n_D = 2 × 10¹⁶ cm^?3 is estimated to be L_D ? 0.34 mm which is consistent with previous results.     

Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.