硅的低温电学性质

本文在20°—300°K研究了室温载流子浓度2×10¹²—1×10²⁰cm^-3含硼或磷(砷)Si的电学性质。对一些p-Si样品用弱场横向磁阻法及杂质激活能法进行了补偿度的测定,并进行了比较。从霍尔系数与温度关系的分析指出,对于较纯样品,硼受主能级的电离能为0.045eV,磷施主能级为0.045eV,在载流子浓度为10¹⁸—10¹⁹cm^-3时发现了费米简并,对载流子浓度为2×10¹⁷—1×10¹⁸cm^-3的p-Si及5×10¹⁷—4×10¹⁸cm^-3的n-Si观察到了杂质电导行为。从霍尔系数与电导率计算了非本征的霍尔迁移率。在100°—300°K间,晶格散射迁移率μ满足关系式AT^-a,其中A=2.1×10⁹,α=2.7(对空穴);或A=1.2×10⁸,α=2.0(对电子)。另外,根据我们的材料(载流子浓度在5×10¹¹—5×10²⁰cm^-3间),分别建立了一条电阻率与载流子浓度及电阻率与迁移率的关系曲线,以提供制备材料时参考之用。

LOW TEMPERATURE ELECTRICAL PROPERTIES OF SILICON MATERIAL

In this paper electrical properties of silicon containing Boron and phosphor (or arsenic) have been measured from 20° to 300°K in the range of carrier concentration 2×10¹² to 1×10²⁰ cm^-3 at room-temperature. The weak-field transverse magneto-resistance and impurity activation energy methods were used to determine the degree of impurity compensation for some p-type silicon samples and these methods have been compared. Analyses of Hall coefficient and electrical conductivity vs temperature curves indicate the ionization energy of Boron (phosphor) acceptor (donor) levels to be 0.045 eV for low impurity concentration; Fermi degeneracy is found to occur in the range of 10¹⁸ to 10¹⁹cm^-3. Impurity conduction has been observed for carrier concentration 2×10¹⁷ to 1×10¹⁸ cm^-3 for p-type silicon and 5×10¹⁷ to 4×10¹⁸ cm^-3 for n-type silicon respectively. Extrinsic Hall mobility is computed from Hall coefficient and conductivity. The temperature dependence of lattice-scattering mobility is found: μ_L=2.1×10⁹T^-2.7 for holes; μ_L=1.2×10⁸T^-2.0 for electrons.Carrier concentration vs. resistivity and Hall mobility vs. resistivity curves had been plotted for our silicon material in the range of carrier concentration 5×10¹¹ to 1×10²⁰ cm^-3. It is aimed to give as reference for preparing silicon material.