In situ high-pressure X-ray diffraction experiments and ab initio calculations of Co2P

In situ high-pressure experiments of Co2P are carried out by means of angle dispersive X-ray diffraction with diamond anvil cell technique. No phase transition is observed in the present pressure range up to 15 GPa at room temperature, even at high temperature and 15 GPa. Results of compression for Co2P are well presented by the second-order Birch-Murnaghan equation of state with V0 = 130.99(2)3 (1=0.1 nm) and K0 = 160(3) GPa. Axial compressibilities are described by compressional modulus of the axis: Ka = 123(2) GPa, Kb = 167(8) GPa and Kc = 220(7) GPa. Theoretical calculations further support the experimental results and indicate that C23-type Co2P is stable at high pressure compared with the C22-type phase.     

Anomalous pressure-induced phase transformation in nano-crystalline erbium sesquioxide (Er2O3): partial amorphization under compression

Nanophase materials have novel physical and chemical properties, differing from bulk materials. It is of exceptional interest to investigate the size effect on structural stability in nanocrystals. Here, we investigated pressure-induced phase transitions in nanosized Er₂O₃ using angle-dispersive synchrotron X-ray diffraction up to 40.6 GPa. Nano-Er₂O₃ has enhanced transition pressure and higher bulk modulus (K₀) than its bulk counterparts. Amorphous Er₂O₃ nanoclusters with traces of monoclinic phase are obtained upon compression. This is the first time that partial amorphous structure under compression was observed in nano-Er₂O₃, indicating a kinetic trapping of partial amorphous Er₂O₃ on pressurizing.     

Active metal brazing of Al2O3 to Kovar® (Fe–29Ni–17Co wt.%) using Copper ABA® (Cu–3.0Si–2.3Ti–2.0Al wt.%)

The application of an active braze alloy (ABA) known as Copper ABA® (Cu–3.0Si–2.3Ti–2.0Al wt.%) to join Al₂O₃ to Kovar® (Fe–29Ni–17Co wt.%) has been investigated. This ABA was selected to increase the operating temperature of the joint beyond the capabilities of typically used ABAs such as Ag–Cu–Ti-based alloys. Silica present as a secondary phase in the Al₂O₃ at a level of ~5 wt.% enabled the ceramic component to bond to the ABA chemically by forming a layer of Si₃Ti₅ at the ABA/Al₂O₃ interface. Appropriate brazing conditions to preserve a near-continuous Si₃Ti₅ layer on the Al₂O₃ and a continuous Fe₃Si layer on the Kovar® were found to be a brazing time of ≤15 min at 1025 °C or ≤2 min at 1050 °C. These conditions produced joints that did not break on handling and could be prepared easily for microscopy. Brazing for longer periods of time, up to 45 min, at these temperatures broke down the Si₃Ti₅ layer on the Al₂O₃, while brazing at ≥1075 °C for 2–45 min broke down the Fe₃Si layer on the Kovar® significantly. Further complications of brazing at ≥1075 °C included leakage of the ABA out of the joint and the formation of a new brittle silicide, Ni₁₆Si₇Ti₆, at the ABA/Al₂O₃ interface. This investigation demonstrates that it is not straightforward to join Al₂O₃ to Kovar® using Copper ABA®, partly because the ranges of suitable values for the brazing temperature and time are quite limited. Other approaches to increase the operating temperature of the joint are discussed.     

Structural and phase transition of α-Al2O3 powders obtained by co-precipitation method

Aluminium oxide has been synthesized by co-precipitation technique at different annealing temperature. Powder XRD confirms the formation of α-Al₂O₃ with rhombohedral crystal structure having lattice constant a = 4.76 Å and b = 12.99 Å by the Scherer formula, the average crystallite size is estimated to be 66 nm. The scanning electron microscope results expose the fact that the α-Al₂O₃ nanomaterials are seemingly porous in nature and highly agglomerated. Chemical composition of aluminium oxide is confirmed by energy dispersive spectroscopy. The molecular functional group is confirmed by FTIR. Optical absorption of α-Al₂O₃ has been studied in the UV–vis region and its direct band gap is estimated to be 5.97 eV. This study involves the structural and phase transition of Al₂O₃ and also indicates that α-Al₂O₃ has considerable properties, deserving further investigation for the energetic materials with excellent properties for the possibility of using thin-layer α-Al₂O₃ as a thermo luminescence material.     

First-principles study of structural,elastic, electronic and thermodynamic properties of topological insulator Bi2Se3 under pressure

The structural, elastic, electronic and thermodynamic properties of the rhombohedral topological insulator Bi₂Se₃ are investigated by the generalized gradient approximation (GGA) with the Wu–Cohen (WC) exchange-correlation functional. The calculated lattice constants agree well with the available experimental and other theoretical data. Our GGA calculations indicate that Bi₂Se₃ is a 3D topological insulator with a band gap of 0.287 eV, which are well consistent with the experimental value of 0.3 eV. The pressure dependence of the elastic constants C_ij, bulk modulus B, shear modulus G, Young’s modulus E, and Poisson’s ratio σ of Bi₂Se₃ are also obtained successfully. The bulk modulus obtained from elastic constants is 53.5 GPa, which agrees well with the experimental value of 53 GPa. We also investigate the shear sound velocity V_S, longitudinal sound velocity V_L, and Debye temperature Θ_E from our elastic constants, as well as the thermodynamic properties from quasi-harmonic Debye model. We obtain that the heat capacity C_v and the thermal expansion coefficient α at 0 GPa and 300 K are 120.78 J mol^?1 K^?1 and 4.70 × 10^?5 K^?1, respectively.     

Evolution of the interfacial phases in Al2O3–Kovar® joints brazed using a Ag–Cu–Ti-based alloy

Abstract

A systematic investigation of the brazing of Al₂O₃ to Kovar^® (Fe–29Ni–17Co wt.%) using the active braze alloy (ABA) Ag–35.25Cu–1.75Ti wt.% has been undertaken to study the chemical reactions at the interfaces of the joints. The extent to which silica-based secondary phases in the Al₂O₃ participate in the reactions at the ABA/Al₂O₃ interface has been clarified. Another aspect of this work has been to determine the influence of various brazing parameters, such as the peak temperature, T_p, and time at T_p, τ, on the resultant microstructure. As a consequence, the microstructural evolution of the joints as a function of T_p and τ is discussed in some detail. The formation of a Fe₂Ti layer on the Kovar^® and its growth, along with adjacent Ni₃Ti particles in the ABA, dominate the microstructural developments at the ABA/Kovar^® interface. The presence of Kovar^® next to the ABA does not change the intrinsic chemical reactions occurring at the ABA/Al₂O₃ interface. However, the extent of these reactions is limited if the purity of the Al₂O₃ is high, and so it is necessary to have some silica-rich secondary phase in the Al₂O₃ to facilitate the formation of a Ti₃Cu₃O layer on the Al₂O₃. Breakdown of the Ti₃Cu₃O layer, together with fracture of the Fe₂Ti layer and separation of this layer from the Kovar^®, has been avoided by brazing at temperatures close to the liquidus temperature of the ABA for short periods of time, e.g., for T_p between 820 and 830 °C and τ between 2 and 8 min.     

Pressure-induced phase transformation of CsPbI3 by X-ray diffraction and Raman spectroscopy

The structural transformation of cesium lead iodine (CsPbI₃) has been investigated in diamond anvil cells up to ～15 GPa at room temperature by employing synchrotron radiation X-ray diffraction and Raman spectroscopy. One reversible transformation from orthorhombic (Pnma) to monoclinic (P2₁/m) phase has been observed at 3.9 GPa. Isothermal pressure–volume relationship of orthorhombic CsPbI₃ is well fitted by the third-order Birch–Murnaghan equation of state with K₀ = 14(3) GPa, K′₀ = 6(2) and V₀ = 891(7) ų. The ultralow value of bulk modulus K₀ demonstrates the high compressible nature of CsPbI₃, similar to those of organic–inorganic metal halide perovskites. The present results provide essential information on the intrinsic properties and stability of CsPbI₃, which may be applied in photovoltaic devices.     

Shock-wave- and hydrostatic-pressure-induced depolarization of Pb(Zr,Sn,Ti)O3 for pulse power applications

Research on quasi-static pressure-induced depolarization illustrates that Pb(Zr,Sn,Ti)O₃ ceramic may be useful in the technology of pulse power. However, lack of knowledge on the shock-induced depolarization hinders this application. To fill this gap, we investigated the shock-wave- and hydrostatic-pressure-induced depolarization of Pb_0.99Nb_0.02[(Zr_0.90Sn_0.10)_0.96Ti_0.04]_0.98O₃ ceramic. In the hydrostatic experiment, complete and sudden depolarization took place at 140 MPa. Shock wave experiments in the normal and axial modes were conducted in the pressure range from 0.81 to 4.50 GPa. At 2.50 GPa, the phase transition occurred completely and the short-circuit current reached 32 A in the normal mode. We obtained 31.0 kV voltage, 0.96 MW and 0.92 J cm^?3 high-voltage pulse with 1000 Ω load. In the axial mode, the shape of the current pulse and its time integral were found to be strongly shock pressure dependent. Our work lays the foundation for the application of Pb(Zr,Sn,Ti)O₃ in the single-use power supply.     

Pressure-dependent phase transition in the ordered BaBi0.7Nb0.3O3 perovskite

BaBi_0.7Nb_0.3O₃, an ordered perovskite, crystallizes in a centrosymmetric rhombohedral structure with the space group R3¯. The refined cell parameters obtained from synchrotron powder X-ray diffraction data for the rhombohedral phase at ambient pressure are a=6.109 (2) Å and α=60.3 (1)°. The pressure-dependent synchrotron powder X-ray diffraction studies show a phase transition around 8.44±1 GPa, where it transforms from rhombohedral structure to a monoclinic structure. The lattice parameters obtained for the monoclinic phase at a pressure of 15±1 GPa are a=5.91 (2) Å, b=6.25 (3) Å and c=8.22 (1) Å with monoclinic angle, β=88 (1)°.     

Study on the photocatalytic activity of K2La2Ti3O10 doped with zinc(Zn)

The layered perovskite type oxides, K₂La₂Ti₃O₁₀ and zinc(Zn)-doped K₂La₂Ti₃O₁₀ were prepared by sol-gel method and were characterized by power X-ray diffraction, UV-vis diffuse reflectance and X-ray photoelectron spectroscopy. The photocatalytic activity for water splitting of the catalyst powders was investigated with I⁻ as electron donor under ultraviolet and visible light irradiation respectively. The electronic structure of the powders has been analyzed by the first principles calculation, which reveals the photo responses in the visible region and the improvement of the photocatalytic activity of K₂La₂Ti₃O₁₀. Conclusions were made that zinc(Zn)-doped K₂La₂Ti₃O₁₀ exhibited higher reactivity for hydrogen production. When I⁻ was used as electron donor, the optimum doping concentration of zinc(Zn) was found to be 0.015:1 (n_Zn:n_Ti). The average hydrogen production rates were 126.6 μmol/(gcat h) under ultraviolet irradiation and 55.5 μmol/(gcat h) under visible light irradiation which were raised by 131% and 251% compared with undoped K₂La₂Ti₃O₁₀ photocatalyst, respectively.     

Investigation of the resistive transition of CaLaBaCu3O7 in magnetic fields up to 10 tesla and pressures up to 46 GPa

Abstract

The onset critical temperature T _co, of CaLaBaCu₃O₇, is measured as a function of pressure by means of a cryogenic diamond anvil cell. We find ?T _co/?p = 0.14 ± 0.02K/GPa. The pressure dependence of the upper critical field B _c2 as a function of pressure is determined for T/T_c , = 0.96. From this we found the corresponding volume dependence of the number of charge carriers to be much smaller than the value derived from Hall effect measurements in YBa₂Cu₃O₇.

Les dérivées par rapport à la pression de la température critique supérieure T_co , (avec ?T _co,??p = 0.14 ± 0.02K/GPa) et du champs critique B _c2 à T/T_c , = 0.96 ont été déterminé á l'aide d'une presse à diamants. Pour le composé CaLaBaCu₃O₇, la variation de la densité de charges en fonction du volume est beaucoup plus faible que celle détermiée par effet Hall dans YBa₂Cu₃O₇.     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合铁电薄膜. 研究了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi₄Ti< 关键词： 2Ta₂O₉')" href="#">SrBi₂Ta₂O₉ 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 复合铁电薄膜 溶胶凝胶工艺     

Effects of RE2O3 (RE = Tm, Sc, Yb) addition on the superconducting properties of ErBa2Cu3Oy

We investigated the effects of added Tm₂O₃, Sc₂O₃, and Yb₂O₃ on the superconducting properties of sintered Er123 samples. Tm₂O₃ addition caused the least T_c degradation, exhibiting a T_c above 90 K even for 17 vol% addition. Samples with added Sc₂O₃ maintained a T_c at above 90 K up to an addition of 7.2 vol%, while Yb₂O₃-containing samples showed a monotonic decrease in T_c with increased vol% of added Yb₂O₃. Tm₂O₃-containing samples exhibited a slight increase in J_c(0.1 T)/J_c(0) and had constant J_c values even for 17 vol% addition. XRD and SEM results indicate that the Tm₂O₃ is very stable in the superconducting matrix.     

Effects of strontium on the characteristics of Pb(Zr1/2Ti1/2)O3--Pb(Zn1/3Nb2/3)O3 ceramics

The dielectric and piezoelectric properties of pyrochlore-free lead zirconate titanate-lead zinc niobate ceramics were investigated systematically as a function of Sr doping. The powders of Pb_{(1? x )}Sr _x [0.7(Zr_{1 / 2}Ti_{1 / 2})–0.3(Zn_{1 / 3}Nb_{2 / 3})]O₃, where x?=?0–0.06 were prepared using the columbite-(wolframite) precursor method. The ceramic materials were characterized using X-ray diffraction, dielectric spectra, hysteresis and electromechanical measurements. The phase-pure perovskite phase of Sr-doped PZN--PZT ceramics was obtained over a wide compositional range. The results showed that the optimized electrical properties were also achieved at composition x?=?0.0, which were K _P?=?0.69, d ₃₃?=?670?pC?N^?1, P _r?=?31.9?µC?cm^?2 and ε_rmax?=?18600. Maximum dielectric constant values of the systems decreased rapidly with increasing Sr concentration. Moreover, with increasing Sr concentration dielectric constant versus temperature curves become gradually broader. The diffuseness parameter increased significantly with Sr doping. Furthermore, Sr doping has been shown to produce a linear reduction in the transition temperature (T _m)?=?294.1–12.7x°C with concentration (x). Sr shifts the transition temperature of this system at a rate of 12.7°C?mol^?1%.     

Equation of state and thermal expansivity of LiF and NaF

The high-pressure and high-temperature behaviors of LiF and NaF have been studied up to 37 GPa and 1000 K. No phase transformations have been observed for LiF up to the maximum pressure reached. The B1 to B2 transition of NaF at room temperature was observed at ～28 GPa, this transition pressure decreases with temperature. Unit-cell volumes of LiF and NaF B1 phase measured at various pressures and temperatures were fitted using a P–V–T Birch–Murnaghan equation of state. For LiF, the determined parameters are: α₀ = 1.05 (3)×10^?4 K^?1, dK/dT = ?0.025 (2) GPa/K, V ₀ = 65.7 (1) Å³, K ₀ = 73 (2) GPa, and K′ = 3.9 (2). For NaF, α₀ = 1.34 (4)×10^?4 K^?1, dK/dT = ?0.020 (1) GPa/K, V ₀ = 100.2 (2) Å³, K ₀ = 46 (1) GPa, and K′ = 4.5 (1).     

High-pressure polymorphic transformation of rutile to alpha-PbO2-type TiO2 at {011}R twin boundaries

The presence of nano-scale lamellae of the α-PbO₂-type polymorph of TiO₂ sandwiched between twinned rutile inclusions in jadeite has been confirmed by electron diffraction and high-resolution transmission electron microscopy, backed up by image simulation techniques, from ultrahigh-pressure jadeite quartzite at Shuanghe in the Dabie Mountains, China. The crystal structure is orthorhombic with lattice parameters a = 4.58 Å, b = 5.42 Å, c = 5.02 Å and space group Pbcn. A three-dimensional structural model has been constructed for the rutile to α-PbO₂-type TiO₂ phase transformation based on high-resolution electron microscopic images. Computer image simulation and structural model analysis reveal that rutile {0 1 1}_R twin interface is a basic structural unit of α-PbO₂-type TiO₂. Nucleation of α-PbO₂-type TiO₂ lamellae 1–2 nm thick is caused by the displacement of one half of the titanium cations within the {0 1 1}_R twin slab. This displacement reduces the Ti–O–Ti distance and is favored by high pressure.     

Influence of [S2O3]/[Sm] on Sm2S3 thin films deposited by liquid phase deposition method on self-assembled monolayers

Sm₂S₃ thin films were prepared on Si (1 0 0) substrates using SmCl₃ and Na₂S₂O₃ as precursors by liquid phase deposition method on self-assembled monolayers. The influence of the molar concentration ratio of [S₂O₃²⁻]/[Sm³⁺] on the phase compositions, surface morphologies and optical properties of the as-deposited films were investigated. The as-deposited Sm₂S₃ thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible (UV-vis) and photoluminescence spectrum (PL). Results show that it is important to control the [S₂O₃²⁻]/[Sm³⁺] during the deposition process and monophase Sm₂S₃ thin films with orientation growth along (0 1 1) direction can be achieved when [S₂O₃²⁻]/[Sm³⁺] = 2.0, pH 3.0, with citric acid as a template agent. The as-deposited thin films exhibit a dense and crystalline surface morphology. Good transmittance in the visible spectrum and excellent absorbency of ultraviolet light of the thin films are observed, and the band gap of the thin films first decrease and then increase with the increase of the [S₂O₃²⁻]/[Sm³⁺]. The as-deposited thin films also exhibit red photoluminescence properties under visible light excitation. With the increase of the [S₂O₃²⁻]/[Sm³⁺] in the deposition solution, the PL properties of Sm₂S₃ thin films are obviously improved.     

Preparation of Bi2S3 thin films with a nanoleaf structure by electrodeposition method

Nanoleaf-like Bi₂S₃ thin films were deposited on indium tin oxide (ITO) glass using Bi(NO₃)₃ and Na₂S₂O₃ as precursors by a cathodic electrodeposition process. The as-deposited thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and photoluminescence spectrum (PL). The influence of precursor solution mole concentration ratios [Bi(NO₃)₃]/[Na₂S₂O₃] on the phase compositions, morphologies and photoluminescence properties of the obtained thin films were investigated. Results show that a uniform Bi₂S₃ thin film with nanoleaf structure can be obtained with the precursor solution concentration ratio [Bi(NO₃)₃]/[Na₂S₂O₃] = 1:7. The as-prepared thin films exhibit blue-green photoluminescence properties under ultraviolet light excitation. With the increase of concentration ratios [Bi(NO₃)₃]/[Na₂S₂O₃] in the deposition solution, the crystallizations and PL properties of Bi₂S₃ thin films are obviously improved.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.