Surface and quasi-longitudinal acoustic waves in KTiOAsO4 single crystals

Surface and quasi-longitudinal acoustic wave properties have been investigated in potassium titanyl arsenate (KTiOAsO₄, KTA) single crystals for the first time. Surface acoustic wave (SAW) velocity, electromechanical coupling coefficient and power flow angle characteristics have been obtained in rotated Y-cut of KTA crystals. High SAW electromechanical coupling coefficient (0.4%) is found in Z-cut of KTA crystals. For high-frequency devices it is promising the resonators on quasi-longitudinal acoustic wave in X-cut of KTA crystals with sharp response in interdigital transducer conductance at resonance frequency.     

Numerical analysis of surface and leaky surface acoustic waves in new piezoelectric KNBO3, PKN, and LGN crystals

We perform a numerical analysis of the properties of surface acoustic waves (SAW) as well as leaky surface acoustic waves (LSAW) in piezoelectric KNbO₃, Pb₂KNb₅O₁₅ (PKN) and La₃Ga_5.5Nb_0.5O₁₄ (LGN) crystals. We determine optimal thermostable cuts and directions in which the SAWs have high phase velocity, a very high coefficient of electromechanical coupling. and a small angle between the phase and group velocities. We also found the cuts and directions in which the LSAWs can exist. The characteristics of the LSAWs (velocity, the coefficient of electromechanical coupling, angle between the phase and group velocities, temperature coefficient of velocity, and coefficient of surface absorption along the LSAW propagation direction) are calculated. N. I. Lobachevsky State University, Nizhny Novgorod, Russia. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 42, No. 5, pp. 485–493, May 1999.     

High frequency SAW devices based on third harmonic generation

We demonstrate the third harmonic generation in a ZnO/Si layered structure to obtain high frequency SAW devices. This configuration eliminates the need of high lithography resolution and allows easy integration of such devices and electronics on the same wafer. A theoretical study was carried out for the determination of the phase velocity and the electromechanical coupling coefficient (K²) dispersion curves of the surface acoustic waves. These results are also in agreement with those measured on a SAW filter designed for the third harmonic generation and the operating frequency is up to 2468 MHz.     

Numerical Calculation of SAW Propagation Properties at the x-Cut of Ferroelectric PMN-33%PT Single Crystals

Surface acoustic wave （SAW） properties at the x-cut of relaxor-based 0.67Pb（Mg1/3Nb2/3）O3-0.33PbTiO3 （PMN- 33%PT） ferroelectric single crystals are analyzed theoretically when poled along the [001]c cubic direction. It can be found that PMN-33%PT single crystal is a kind of material with a low phase velocity and high electromechanical coupling coefficient, and the single crystal possesses some cuts with zero power flow angle. The results are based on the material parameters at room temperature. The conclusions provide device designers with a few ideal cuts of PMN-33%PT single crystals. Moreover, choosing an optimal cut will dramatically improve the performance of SAW devices, and corresponding results for crystal systems working at other temperatures could also be figured out by employing the method.     

Angular dependence of surface acoustic wave characteristics in AlN thin films on a-plane sapphire substrates

AlN thin films have been grown on a-plane sapphire (Al₂O₃(112̄0)) substrates. X-ray diffraction measurements indicate the films are fully c-plane (0001) oriented with a full width at half maximum of the AlN(0002) rocking curves of 0.92. The epitaxial growth relationships have been determined by the reflection high energy electron diffraction analysis as AlN[11̄00]//Al₂O₃[0001] and AlN[112̄0]//Al₂O₃[11̄00]. Angular dependence of important surface acoustic wave (SAW) characteristics, such as the phase velocity and electromechanical coupling coefficient, has been investigated on the AlN(0001)/Al₂O₃(112̄0) structure. While the SAW is excited at all propagation angles with an angular dispersion of the phase velocity in the range of 5503–6045 m/s, a higher velocity shear-horizontal (SH) mode is observed only at 0°, 105° and 180° off the reference Al₂O₃[11̄00] over a 180° angular period. The phase velocity of the SH mode shows dispersion (6089–6132 m/s) as a function of the SAW wavelength. Temperature coefficients of frequency are also demonstrated for both modes. PACS 81.15.Hi; 77.84.-s; 77.65.Dq     

Characteristics of fundamental acoustic wave modes in thin piezoelectric plates

The characteristics of the three lowest order plate waves (A(0), S(0), and SH(0)) propagating in piezoelectric plates whose thickness h is much less than the acoustic wavelength lambda are theoretically analyzed. It is found that these waves can provide much higher values of electromechanical coupling coefficient K(2) and lower values of temperature coefficient of delay (TCD) than is possible with surface acoustic waves (SAWs). For example, in 30Y-X lithium niobate, the SH(0) mode has K(2)=0.46 and TCD=55 ppm/degrees C. The corresponding values for SAW in the widely used, strong coupling material of 128Y-X lithium niobate are K(2)=0.053 and TCD=75 ppm/degrees C. Another important advantage of plate waves is that, unlike the case of SAWs, they can operate satisfactorily in contact with a liquid medium, thus making possible their use in liquid phase sensors.     

ZnO薄膜/金刚石在不同激励条件下声表面波特性的计算与分析

本文首先以刚度矩阵法为基础, 给出了ZnO薄膜/金刚石在四种不同激励条件下的有效介电常数计算公式. 然后以此为工具, 分别计算了多晶ZnO(002) 薄膜/多晶金刚石和单晶ZnO(002) 薄膜/多晶金刚石的声表面波特性, 并根据计算结果及设计制作声表面波器件的要求, 对ZnO膜厚的选择进行了详细地分析. 最后讨论了ZnO/金刚石/Si复合晶片可以忽略Si衬底对声表面特性影响时对金刚石膜厚的要求. 关键词： 声表面波 压电多层结构 有效介电常数 刚度矩阵法     

Propagations of Rayleigh and Love waves in ZnO films/glass substrates analyzed by three-dimensional finite element method

Propagation characteristics of surface acoustic waves(SAWs) in ZnO films/glass substrates are theoretically investigated by the three-dimensional(3D) finite element method. At first, for(11ˉ20) ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k~2 of 2.4% in(90°, 56.5°, 0°) ZnO film/glass substrate structure; Love wave has a maximum k~2 of 3.81% in(56°, 90°, 0°) ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency(TCF) can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k~2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.     

Love wave propagation in functionally graded piezoelectric material layer

An exact approach is used to investigate Love waves in functionally graded piezoelectric material (FGPM) layer bonded to a semi-infinite homogeneous solid. The piezoelectric material is polarized in z-axis direction and the material properties change gradually with the thickness of the layer. We here assume that all material properties of the piezoelectric layer have the same exponential function distribution along the x-axis direction. The analytical solutions of dispersion relations are obtained for electrically open or short circuit conditions. The effects of the gradient variation of material constants on the phase velocity, the group velocity, and the coupled electromechanical factor are discussed in detail. The displacement, electric potential, and stress distributions along thickness of the graded layer are calculated and plotted. Numerical examples indicate that appropriate gradient distributing of the material properties make Love waves to propagate along the surface of the piezoelectric layer, or a bigger electromechanical coupling factor can be obtained, which is in favor of acquiring a better performance in surface acoustic wave (SAW) devices.     

SH Acoustic Waves in a Lithium Niobate Plate and the Effect of Electrical Boundary Conditions on Their Properties

It is theoretically and experimentally confirmed that the electromechanical coupling coefficient of SH waves propagating in a Y-cut lithium niobate plate along the X direction can exceed 30% when the plate thickness satisfies the condition h/λ= 0.02–0.15. This value of the coupling coefficient is approximately six to seven times greater than the maximal value obtained for SAW in the same material. Such a high value of K ² offers a possibility to control the wave velocity by varying the electrical boundary conditions, e.g., by moving a conducting screen toward the plate surface. The effect of such a screen on the properties of the SH waves is studied both theoretically and experimentally. On the whole, the results of the study show that the use of SH waves offers considerable improvements in the parameters of the known SAW devices and also opens up the possibilities for the development of new devices and sensors that have to operate in contact with a liquid medium.     

压电基片与金属点阵厚度对行波模式声表面波陀螺仪检测灵敏度的影响

过低的灵敏度性能一直是声表面波(SAW)陀螺仪的瓶颈问题,对此,提出了一种结合金属点阵用以改善陀螺效应的新型行波模式SAW陀螺仪,并对其性能进行了评价。该结构由双延迟线型振荡器构成,两延迟线平行且反向制作于同一压电基片上,在延迟线的声传播路径上分布铜点阵。结合层状介质中声波传输特性的研究方法分析了两种压电晶体材料、不同金属点阵膜厚对传感器响应的影响,从而为确定陀螺仪的设计奠定理论基础。基于理论计算结果,研制了以128°YX LiNbO3及X-112°Y LiTaO₃为压电基片,铜点阵厚度分别为33000 Å,6000 Å,9000 Å的95 MHz声表面波陀螺仪。为改善振荡器的频率稳定性,延迟线采用了具有梳状结构的单相单向换能器结构。振荡器的测试频率稳定度达到了±5 Hz/h。利用精确速率转台对所研制的SAW陀螺仪性能进行了测试。测试结果表明:采用机电耦合系数较高的128°YX LiNbO₃基片并增加金属点阵厚度均能有效提高陀螺仪的检测灵敏度,所获得的最大检测灵敏度为2.7 Hz/(deg/s)。      

The anisotropy of the basic characteristics of Lamb waves in a (001)-Bi<Subscript>12</Subscript>SiO<Subscript>20</Subscript> piezoelectric crystal

The orientation dependences of the phase velocity, the effective electromechanical coupling coefficient, and the angle between the wave normal and the energy flux vector are numerically calculated for zeroand first-order Lamb waves propagating in the (001) basal plane of a Bi₁₂SiO₂₀ cubic piezoelectric crystal. It is shown that the anisotropies of these modes are different and depend on the plate thickness h and the wavelength λ. For h/λ < 1, the mode anisotropy can exceed the anisotropy of the corresponding characteristics of surface acoustic waves propagating in the same plane; for h/λ > 1, it approximately coincides with the SAW anisotropy for all the characteristics.     

Analysis of the piezoelectric properties of tangentially polarized, stripe-electroded cylinders

The electromechanical properties of thin tangentially polarized, stripe-electroded piezoceramic elements are considered. Theoretical analysis is made based on a piecewise linear approximation of the actual nonuniform electric field in the volume of the stripe-electroded cylinder design. Analytical expressions are derived for the electromechanical properties (including the effective coupling coefficient) of the tangentially polarized elements as a function of the geometry and electrode configuration (i.e., electrode width and spacing). The properties of stripe-electroded cylinders are calculated and compared with the ideal case of a uniform circumferential electric field, which may be realized in practice with segmented cylinders comprised of 33-polarized bar elements. The reasons for the reduction in the effective coupling coefficient of tangentially polarized stripe-electroded cylinders compared to the ideal coupling coefficient k(33) achievable with the segmented cylinder designs are discussed. The results of calculations of the electromechanical properties are in good agreement with experimentally obtained data on a variety of samples.     

Effect of initial stress on Love waves in a piezoelectric structure carrying a functionally graded material layer

The effect of initial stress on the propagation behavior of Love waves in a piezoelectric half-space of polarized ceramics carrying a functionally graded material (FGM) layer is analytically investigated in this paper from the three-dimensional equations of linear piezoelectricity. The analytical solutions are obtained for the dispersion relations of Love wave propagating in this kind of structure with initial stress for both electrical open case and electrical short case, respectively. One numerical example is given to graphically illustrate the effect of initial stress on dispersive curve, phase velocity and electromechanical coupling factor of the Love wave propagation. The results reported here are meaningful for the design of surface acoustic wave (SAW) devices with high performance.     

Characteristics of surface acoustic waves in (11$$\bar 2$$ 0)ZnO film/ R-sapphire substrate structures

(11\(\bar 2\)0)ZnO film/R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity (v _p), electromechanical coupling coefficient (k ²), temperature coefficient of frequency (TCF) and reflection coefficient (r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k ² of 4.95% in (90°, 90°, 0°) (11\(\bar 2\)0)ZnO film/R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\(\bar 2\)0)ZnO film/R-sapphire substrate has a maximum k ² of 3.86% associated with a phase velocity of 3400 m/s. And (11\(\bar 2\)0)ZnO film/R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.     

Properties of pseudomode surface acoustic waves on ST-cut quartz substrates and the effects of the thicknesses of metallic films

The present study utilized an impedance matrix method to solve the properties of a surface acoustic wave (SAW) in a piezoelectric medium. By introducing complex wavenumbers, pseudo-SAWs (PSAWs) and high-velocity pseudo-SAW (HVPSAWs) with higher phase velocity and lower propagation loss can be achieved for certain propagation directions in ST-cut quartz. It is also found that, when a PSAW is excited on ST-cut 90°X propagation, the quartz substrate exhibits the characteristics of the existence of only the shear horizontal component, no spurious response, and zero-power flow angle (PFA). Combining a heavy-metal electrode such as gold (Au) of suitable thickness, the electromechanical coupling factor of PSAWs can be enhanced. The enhancement is about 2.5 times larger than that of conventional SAWs on an ST-X substrate with an aluminum (Al) electrode. Published in Russian in Akusticheskiĭ Zhurnal, 2006, Vol. 52, No. 3, pp. 401–407. The text was submitted by the authors in English.     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

Surface acoustic wave device properties of (B, Al)N films on 128° Y-X LiNbO3 substrate

A c-axis orientated aluminium nitride (AlN) film on a 128° Y-X lithium niobate (LiNbO₃) surface acoustic wave (SAW) device which exhibit a large electromechanical coupling coefficient (k²) and a high SAW velocity property, is needed for future communication applications. In this study, a c-axis orientated (B, Al)N film (with 2.6 at.% boron) was deposited on a 128° Y-X LiNbO₃ substrate by a co-sputtering system to further boost SAW device properties. The XRD and TEM results show that the (B, Al)N films show highly aligned columns with the c-axis perpendicular to the substrate. The hardness and Young's modulus of (B, Al)N film on 128° Y-X LiNbO₃ substrates are at least 17% and 7% larger than AlN films, respectively. From the SAW device measurement, the operation frequency characteristic of (B, Al)N film on 128° Y-X LiNbO₃ is higher than pure AlN on it. The SAW velocity also increases as (B, Al)N film thickness increases (at fixed IDT wavelength). Furthermore, the k² of (B, Al)N on the IDT/128° Y-X LiNbO₃ SAW device shows a higher value than AlN on it.     

Zno-SiO2-Si结构中压电薄膜C轴取向等参数对声表面波的影响

当ＺｎＯ－ＳｉＯ２－Ｓｉ结构中的ＺｎＯ薄膜Ｃ轴取向偏离基片法向时，将对声表面波传播速度，机电耦合系数等参量产生影响。本文对此问题进行了理论分析和数值计算；同时还讨论了本结构中影响声表面波束偏的一些参数。     

Filtering performance improvement in V-doped ZnO/diamond surface acoustic wave filters

High-frequency surface acoustic wave (SAW) filters using undoped and V-doped ZnO films were fabricated on diamond. Compared with their counterparts, the SAW filters using V-doped ZnO films have higher electromechanical coupling coefficient of ∼2.9% and lower insertion loss. The filtering performance improvement is considered to be due to the ferroelectricity in V-doped ZnO films and the resultant high piezoresponse (∼110 pm/V), which is one order of magnitude larger than that of undoped ZnO films. In addition, more perfect (0 0 2) preferred orientation, better uniform grains and smoother surface of V-doped ZnO films also contribute to the filtering performance improvement.