Classical Dynamical r-Matrices¶and Homogeneous Poisson Structures on G/H and K/T

Let G be a finite dimensional simple complex group equipped with the standard Poisson Lie group structure. We show that all G-homogeneous (holomorphic) Poisson structures on G/H, where H⊂G is a Cartan subgroup, come from solutions to the Classical Dynamical Yang–Baxter equations which are classified by Etingof and Varchenko. A similar result holds for a maximal compact subgroup K, and we get a family of K-homogeneous Poisson structures on K/T, where T=K∩H is a maximal torus of K. This family exhausts all K-homogeneous Poisson structures on K/T up to isomorphisms. We study some Poisson geometrical properties of members of this family such as their symplectic leaves, their modular classes, and the moment maps for the T-action. Received: 4 September 1999 / Accepted: 25 January 2000     

Crystal structure and electrical properties of GdxMn1 ? xS and TixMn1 ? xSe solid solutions

Regions of the existence of sulfide Gd _x Mn_{1 − x} S and selenide Ti _x Mn_{1 − x} Se solid solutions have been identified. Their electrical and thermoelectric properties have been studied in the temperature range 80–900 K. It has been established that the substitution of Gd²⁺ and Ti²⁺ ions for Mn²⁺ cations initiates reversal of the type of charge carrier with respect to the starting compounds MnS and MnSe. The cation substitution in solid solutions brings about a change from the hole conduction (α > 0) characteristic of the manganese monosulfide and monoselenide to the electronic conduction (α < 0).     

Preparation and Characterization of Polyacrylonitrile and Polyacrylonitrile/β-cyclodextrins Microspheres

Polyacrylonitrile (PAN) and PAN/β-cyclodextrin (β-CD) microspheres were prepared via an electrospinning method. The PAN microspheres could be successfully obtained in a suitable range of concentrations of electrospun PAN solutions. When β-CD was added to the PAN solutions, electrospun PAN/β-CD composite spheres were prepared. The morphology of the spheres was characterized by scanning electron microscopy (SEM); it showed that the spheres had uniform diameter and a smooth surface. The composition of the composite microspheres was studied by Fourier transform infrared spectroscopy (FTIR). The results showed that the β-CD was incorporated in the polymer microspheres.     

Σu and Πu states of the hydrogen molecule: Nonadiabatic couplings and vibrational levels

Nonadiabatic coupling matrix elements are computed for six lowest and four lowest ¹Π_u electronic states of H₂ in a wide range of internuclear distances. These matrix elements are used together with the adiabatic potentials to determine the bound ro-vibrational levels of the 10 electronic states for rotational quantum numbers J ? 10. The computed energies agree quite well with existing experimental term values. However, some of the experimental levels should be assigned differently.     

Structural Peculiarities and Magnetic Properties of Nanoscale Terbium in Tb/Ti and Tb/Si Multilayers

The structure and the magnetic properties of rf-sputtered nauoscale Tb in [Tb/Ti]n and [Tb/Si] multilayers have been studied experimentally. It is found that the structure of Tb layers changes, transforming from a fine-crystalline state of Tb into an amorphous state as the magnetic layer thickness decreases. The observed displacement of a magnetic ordering temperature to the lower temperature range and the shift of magnetic hysteresis obtained in the ZFC-FC terms may be caused by the size effect and the amorphization. Both the first and the second suppress the exchange interaction and decrease the crystalline magnetic anisotropy. The type of material of nonmagnetic spacers between the Tb layers plays a certain role in these changes.     

Synthesis and properties of Au-Fe3O4 and Ag-Fe3O4 heterodimeric nanoparticles

Monodisperse Au-Fe 3 O 4 heterodimeric nanoparticles (NPs) were prepared by injecting precursors into a hot reaction solution.The size of Au and Fe 3 O 4 particles can be controlled by changing the injection temperature.UV-Vis spectra show that the surface plasma resonance band of Au-Fe 3 O 4 heterodimeric NPs was evidently red-shifted compared with the resonance band of Au NPs of similar size.The as-prepared heterodimeric Au-Fe 3 O 4 NPs exhibited superparamagnetic properties at room temperature.The Ag-Fe 3 O 4 heterodimeric NPs were also prepared by this synthetic method simply using AgNO 3 as precursor instead of HAuCl 4.It is indicated that the reported method can be readily extended to the synthesis of other noble metal conjugated heterodimeric NPs.     

Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition （MOCVD） Rapid thermal annealing （RTA） treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AIGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 ×10^3 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7 × 10^17 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.     

Structural and superconductivity study on α-FeSex

We have successfully synthesized the α-FeSe_x binary tetragonal superconductors with nominal composition of FeSe_x (x=0.6-1.0) via conventional solid state reactions between Fe and Se sealed in quartz tubes. Fe and β-FeSe are the most commonly seen impurities in this binary system. A low-temperature annealing at 400 °C is found to be crucial to remove β-FeSe, which is the thermodynamic stable phase with hexagonal symmetry. For all the samples of FeSe_x, superconductivity is confirmed by magnetic measurements as well as resistivity measurements with their T_c at around 8 K. We noticed that their T_c does not vary with the different nominal Se amount. High-resolution synchrotron X-ray diffraction analysis revealed that the unit cell parameters of all these samples do not change within the error range, and their structure only tolerate the same very small amount of Se deficiency. Based on this study, we concluded that the α-FeSe_x superconductor only exist in a very narrow deficiency range.     

Pionic Kα X-ray energy and linewidth IN 20Ne and 22Ne

We have measured the energies and linewidths of the pionic K_α X-rays for ²⁰Ne and ²²Ne using a natural liquid-neon target. The results are

     

11.

Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors          下载免费PDF全文

贾泽任天令  刘天志胡洪  张志刚谢丹 刘理天 《中国物理快报》2006,23(4):1042-1045

Pb（Zr0.4Ti0.6）O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.     

12.

Temperature and density dependence of μ-catalysis cycling rate in dense D/T and H/D/T gas mixtures     

V.R. Bom  J.N. Bradbury  J.D. Davies  A.M. Demin  D.L. Demin  A.E. Drebushko  V.P. Dzhelepov  C.W.E. van Eijk  V.V. Filchenkov  A.N. Golubkov  N.N. Grafov  V.G. Grebinnik  S.K. Grishechkin  V.G. Klevtsov  A.D. Konin  A.A. Kukolkin  S.V. Medved'  V.A. Nazarov  V.V. Perevozchikov  V.I. Pryanichnikov  V.Ya. Rozhkov  A.I. Rudenko  S.M. Sadetsky  G.G. Semenchuk  V.T. Sidorov  Yu.V. Smirenin  I.I. Sukhoi  N.I. Voropaev  A.A. Yukhimchuk  V.G. Zinov  S.V. Zlatoustovskii 《Hyperfine Interactions》1999,118(1-4):103-109

Muon catalyzed dt fusion in dense D/T and H/D/T gas mixtures of hydrogen isotopes is studied by the MCF collaboration at JINR. The measurements were carried out with a high pressure target at the JINR phasotron in the temperature range 300-800 K at mixture densities . Tentative experimental results obtained by several analysis methods are presented. This revised version was published online in August 2006 with corrections to the Cover Date.     

13.

Superconductivity and critical fields in undoped and Sn-doped MoSr₂YCu₂O_8−δ     

N. Balchev  K. Nenkov  V. Antonov  J. Pirov  B. Kunev 《Physica C: Superconductivity and its Applications》2010,470(22):2040-2046

Samples with nominal compositions MoSn_xSr₂YCu₂O_8−δ (0 ? x ? 0.075) were synthesized and their superconducting and magnetotransport properties were investigated. It was established that the optimum Sn-doping (x = 0.02 and 0.03) increases the T_c of the undoped MoSr₂YCu₂O_8−δ. The upper critical fields of the samples were determined using magnetization, susceptibility and resistivity measurements. It was established that the Sn-doping weakly affects the first and the intragrain second critical field of Mo-1212 but enhances the extrapolated to T = 0 (i.e. the intergrain) upper critical field. The observed phenomena were discussed on the basis of the Josephson-junction-arrays model. A phenomenological expression describing the temperature dependency of the susceptibility of Mo-1212 was found.     

14.

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature          下载免费PDF全文

Ibrahim Ycedag  Ahmet Kaya  Semsettin Altindal  Ibrahim Uslu 《中国物理 B》2014,(4):545-550

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

15.

Electronic and crystal structure of α- and β-CeIr₂Si₂     

M. Mihalik  M. Diviš  V. Sechovský 《Physica B: Condensed Matter》2009,404(19):3191-3194

We present the results of XRD, magnetization, resistivity and specific heat measurements of CeIr₂Si₂ single crystals for both, the low-temperature α-phase and the high-temperature β-phase, respectively. The α-phase adopts the tetragonal ThCr₂Si₂-type whereas the β-phase forms in the CaBe₂Ge₂-type structure. Both the phases remain paramagnetic down to low temperatures, nevertheless both, the magnetization and resistivity exhibit pronounced anisotropy in the whole temperature range of measurements (2-300 K). Results of fitting the temperature dependence of the susceptibility within the interconfiguration-fluctuation model point to the Ce valence fluctuating between 3+ and 4+. The α-phase behaves as a Fermi-liquid (FL) at low temperatures whereas the β-phase exhibits non-Fermi-liquid (NFL) features. The results are discussed in context of other similar polymorphic compounds.     

16.

Exact P_sT_d invariant and P_sT_d symmetric breaking solutions,symmetry reductions and Bäcklund transformations for an AB–KdV system     

Man Jia  Sen Yue Lou 《Physics letters. A》2018,382(17):1157-1166

In natural and social science, many events happened at different space–times may be closely correlated. Two events, A (Alice) and B (Bob) are defined as correlated if one event is determined by another, say, $B=\stackrel{?}{f}A$ for suitable $\stackrel{?}{f}$ operators. A nonlocal AB–KdV system with shifted-parity ($P_s$, parity with a shift), delayed time reversal ($T_d$, time reversal with a delay) symmetry where $B=\stackrel{?}{P_s}\stackrel{?}{T_d}A$ is constructed directly from the normal KdV equation to describe two-area physical event. The exact solutions of the AB–KdV system, including $P_s{T}_d$ invariant and $P_s{T}_d$ symmetric breaking solutions are shown by different methods. The $P_s{T}_d$ invariant solution show that the event happened at A will happen also at B. These solutions, such as single soliton solutions, infinitely many singular soliton solutions, soliton–cnoidal wave interaction solutions, and symmetry reduction solutions etc., show the AB–KdV system possesses rich structures. Also, a special Bäcklund transformation related to residual symmetry is presented via the localization of the residual symmetry to find interaction solutions between the solitons and other types of the AB–KdV system.     

17.

Φπ production in\bar pp annihilation from S and P states and in J/ψ decaysannihilation from S and P states and in J/ψ decays     

A. V. Anisovich  E. Klempt 《Zeitschrift für Physik A Hadrons and Nuclei》1996,354(1):197-208

Recent experiments at LEAR have found surprisingly large branching ratios for reactions $\bar NN \to \phi \pi $ from S-wave initial states while noφπ production is observed from P states of the $\bar pp$ system. Also, noφπ is seen in radiative J/ψ decays even though the rate forωπ is substantial. We calculate theφπ production rates for these three cases viaKK* intermediate states and $K\bar K$ rescattering using the dispersion relation technique; we find that the largeφπ rate in $\bar pp$ annihilations from S states can be reproduced with a reasonable cut-off for the dispersion integral; for J/ψ decays the calculatedφπ rate is compatible with the observed upper limit. We would, however, expectφπ to be seen from $\bar pp$ P-states, in contrast to experimental findings. Yet the branching ratio for $\bar pp \to K*\bar K$ via isospinI = 1 of $\bar pp$ ,¹ P ₁ state is not known; and therefore no definite conclusion can be drawn. We also compare the Dalitz plots we obtain for directφ production and forφ production via rescattering. Clear differences between the two theoretical distributions are observed; yet very high precision data would be required to establish the origin — direct production or rescattering — of theφ mesons. This observation supports the use of the isobar model in data analyses.     

18.

On κ-deformation and UV/IR mixing     

《Nuclear Physics B》2006,748(3):473-484

     

19.

Quantization: Deformation and/or Functor?     

Daniel?SternheimerEmail author 《Letters in Mathematical Physics》2005,74(3):293-309

After a short presentation of the difference in motivation between the Berezin and deformation quantization approaches, we start with a reminder of Berezin’s view of quantization as a functor followed by a brief overview of deformation quantization in contrast with the latter. We end by a short survey of two main avatars of deformation quantization, quantum groups and quantum spaces (especially noncommutative geometry) presented in that perspective.     

20.

Simulation of the electronic structure of simple oxides BeO and SiO₂ and complex oxides Be₂SiO₄ and Be₂Si_xGe_{1 ? x}O₄ with the phenacite structure     

V. V. Mazurenko  A. N. Rudenko  Ya. O. Kvashnin  V. G. Mazurenko  Yu. N. Novoselov  V. A. Pustovarov  A. I. Kukharenko  S. O. Cholakh 《Journal of Experimental and Theoretical Physics》2011,112(5):877-883

The ab initio numerical calculations of the electronic structure of simple oxides BeO and SiO₂ and complex oxides Be₂SiO₄ and Be₂Si _x Ge_{1 − x} O₄ with the phenacite structure have been performed using the electron density functional theory. The calculations indicate that the main feature of the systems under investigation is the presence of oxygen states in both the valence and conduction bands. The splitting of the bottom of the conduction band has been revealed in the electronic structure of the Be₂Si _x Ge_{1 − x} O₄ system. The splitting width is about 1.5 eV. The main contribution to the formation of a narrow subband of the conduction band comes from the 2s and 2p states of oxygen and the 4d state of germanium. Microscopic models of the spatial localization of the electron density on lower energy states of the conduction band of oxide crystals have been developed using the Wannier function technique. The reflection spectra of BeO, SiO₂, and Be₂SiO₄ have been analyzed. The reported calculations of the electronic structure imply the exciton nature of the 9.7-eV reflection peak in the Be₂SiO₄ crystal.     

20Ne	22Ne
Neenergy (keV)	239.12±0.14	230.49±0.88
width (keV)	15.43±0.41	12.65±3.51

Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors

Pb（Zr0.4Ti0.6）O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.     

Temperature and density dependence of μ-catalysis cycling rate in dense D/T and H/D/T gas mixtures

Muon catalyzed dt fusion in dense D/T and H/D/T gas mixtures of hydrogen isotopes is studied by the MCF collaboration at JINR. The measurements were carried out with a high pressure target at the JINR phasotron in the temperature range 300-800 K at mixture densities . Tentative experimental results obtained by several analysis methods are presented. This revised version was published online in August 2006 with corrections to the Cover Date.     

Superconductivity and critical fields in undoped and Sn-doped MoSr2YCu2O8−δ

Samples with nominal compositions MoSn_xSr₂YCu₂O_8−δ (0 ? x ? 0.075) were synthesized and their superconducting and magnetotransport properties were investigated. It was established that the optimum Sn-doping (x = 0.02 and 0.03) increases the T_c of the undoped MoSr₂YCu₂O_8−δ. The upper critical fields of the samples were determined using magnetization, susceptibility and resistivity measurements. It was established that the Sn-doping weakly affects the first and the intragrain second critical field of Mo-1212 but enhances the extrapolated to T = 0 (i.e. the intergrain) upper critical field. The observed phenomena were discussed on the basis of the Josephson-junction-arrays model. A phenomenological expression describing the temperature dependency of the susceptibility of Mo-1212 was found.     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

Electronic and crystal structure of α- and β-CeIr2Si2

We present the results of XRD, magnetization, resistivity and specific heat measurements of CeIr₂Si₂ single crystals for both, the low-temperature α-phase and the high-temperature β-phase, respectively. The α-phase adopts the tetragonal ThCr₂Si₂-type whereas the β-phase forms in the CaBe₂Ge₂-type structure. Both the phases remain paramagnetic down to low temperatures, nevertheless both, the magnetization and resistivity exhibit pronounced anisotropy in the whole temperature range of measurements (2-300 K). Results of fitting the temperature dependence of the susceptibility within the interconfiguration-fluctuation model point to the Ce valence fluctuating between 3+ and 4+. The α-phase behaves as a Fermi-liquid (FL) at low temperatures whereas the β-phase exhibits non-Fermi-liquid (NFL) features. The results are discussed in context of other similar polymorphic compounds.     

Exact PsTd invariant and PsTd symmetric breaking solutions,symmetry reductions and Bäcklund transformations for an AB–KdV system

In natural and social science, many events happened at different space–times may be closely correlated. Two events, A (Alice) and B (Bob) are defined as correlated if one event is determined by another, say, $B=\stackrel{?}{f}A$ for suitable $\stackrel{?}{f}$ operators. A nonlocal AB–KdV system with shifted-parity ($P_s$, parity with a shift), delayed time reversal ($T_d$, time reversal with a delay) symmetry where $B=\stackrel{?}{P_s}\stackrel{?}{T_d}A$ is constructed directly from the normal KdV equation to describe two-area physical event. The exact solutions of the AB–KdV system, including $P_s{T}_d$ invariant and $P_s{T}_d$ symmetric breaking solutions are shown by different methods. The $P_s{T}_d$ invariant solution show that the event happened at A will happen also at B. These solutions, such as single soliton solutions, infinitely many singular soliton solutions, soliton–cnoidal wave interaction solutions, and symmetry reduction solutions etc., show the AB–KdV system possesses rich structures. Also, a special Bäcklund transformation related to residual symmetry is presented via the localization of the residual symmetry to find interaction solutions between the solitons and other types of the AB–KdV system.     

Φπ production in\bar pp annihilation from S and P states and in J/ψ decaysannihilation from S and P states and in J/ψ decays

Recent experiments at LEAR have found surprisingly large branching ratios for reactions $\bar NN \to \phi \pi $ from S-wave initial states while noφπ production is observed from P states of the $\bar pp$ system. Also, noφπ is seen in radiative J/ψ decays even though the rate forωπ is substantial. We calculate theφπ production rates for these three cases viaKK* intermediate states and $K\bar K$ rescattering using the dispersion relation technique; we find that the largeφπ rate in $\bar pp$ annihilations from S states can be reproduced with a reasonable cut-off for the dispersion integral; for J/ψ decays the calculatedφπ rate is compatible with the observed upper limit. We would, however, expectφπ to be seen from $\bar pp$ P-states, in contrast to experimental findings. Yet the branching ratio for $\bar pp \to K*\bar K$ via isospinI = 1 of $\bar pp$ ,¹ P ₁ state is not known; and therefore no definite conclusion can be drawn. We also compare the Dalitz plots we obtain for directφ production and forφ production via rescattering. Clear differences between the two theoretical distributions are observed; yet very high precision data would be required to establish the origin — direct production or rescattering — of theφ mesons. This observation supports the use of the isobar model in data analyses.     

Quantization: Deformation and/or Functor?

After a short presentation of the difference in motivation between the Berezin and deformation quantization approaches, we start with a reminder of Berezin’s view of quantization as a functor followed by a brief overview of deformation quantization in contrast with the latter. We end by a short survey of two main avatars of deformation quantization, quantum groups and quantum spaces (especially noncommutative geometry) presented in that perspective.     

Simulation of the electronic structure of simple oxides BeO and SiO2 and complex oxides Be2SiO4 and Be2SixGe1 ? xO4 with the phenacite structure

The ab initio numerical calculations of the electronic structure of simple oxides BeO and SiO₂ and complex oxides Be₂SiO₄ and Be₂Si _x Ge_{1 − x} O₄ with the phenacite structure have been performed using the electron density functional theory. The calculations indicate that the main feature of the systems under investigation is the presence of oxygen states in both the valence and conduction bands. The splitting of the bottom of the conduction band has been revealed in the electronic structure of the Be₂Si _x Ge_{1 − x} O₄ system. The splitting width is about 1.5 eV. The main contribution to the formation of a narrow subband of the conduction band comes from the 2s and 2p states of oxygen and the 4d state of germanium. Microscopic models of the spatial localization of the electron density on lower energy states of the conduction band of oxide crystals have been developed using the Wannier function technique. The reflection spectra of BeO, SiO₂, and Be₂SiO₄ have been analyzed. The reported calculations of the electronic structure imply the exciton nature of the 9.7-eV reflection peak in the Be₂SiO₄ crystal.