第18届国际化学奥林匹克预备题答案

物理化学答案第一题:,.祭=‘:,:B〕一‘Z「B·: 攀=‘2〔B’〕一‘3〔”,〕I二光强度第二题:(1)苯分子中有6x(H一C(每个C一H有C:(15)“(25)“(2尹)2=6 H:(15)=i 7个电子。2·祭=0、〔B·〕。一丫〔B〕6个C一H总共有42个电子。等=”升「“T〕。=会〔“’〕。二〔B〕 (1、)2电子定域于C核的周围不参与成键,所以42一6 xZ=30个电子参与成键。ks3,光的强度应为恒定〔BT〕。=黔〔B斧〕。= 人3工[B〕k3[BT]。只由k:I及k3来决定,而和k:无关。 (2)C原子与其他二个C原子及一个H原子形成口键。每个C原子去掉了3个电子,剩下一个在尹轨道上的…     

掺Eu的SiO2-B2O3体系和SiO2-B2O3-Na2O体系的结构及Eu3+的发光性质

采用溶胶-凝胶技术制备了掺Eu3+的以SiO2-B2O3和SiO2-B2O3-Na2O为基质的玻璃态发光材料. 通过激发光谱、发射光谱研究了Eu3+的发光性质, 通过红外光谱、 TEM 、 XRT进一步研究了基质结构变化对发光性能的影响. 结果显示 材料经 600 ℃退火处理后, 结构已十分稳定. 在588 nm和613 nm处显示弱的Eu3+的特征发射光谱, 对应于Eu3+的5D0-7Fj(j=1,2)跃迁. 以SiO2-B2O3为基质的玻璃材料的红外光谱显示形成了Si-O-B键. 该结构对Eu3+的发光有严重的淬灭作用, 使Eu3+的发光强度大大减弱. 以SiO2-B2O3-Na2O为基质的玻璃材料显示Eu3+的发光增强, 红外光谱显示不存在Si-O-B键的振动吸收. 可能是Na取代B的位置, 形成了Si-O-Na键. 此结构对Eu3+的发光有一定增加作用.     

基态UC2分子的结构和势能函数

采用密度泛函理论(DFT)的B3LYP方法和相对论有效原子实势理论模型(RECP),对UC2分子可能的结构进行优化计算,得到UC2分子稳定构型为角形C-U-C(C2v);由微观可逆性原理,判断了UC2分子的离解极限;并且导出了基态UC2分子(X 5B1)的多体项展式势能函数,其势能面等值图展现了C-U-C(C2v)稳定结构;根据势能面等值图,讨论了C+UC(X 3П)反应和U+C2(X 1∑+g)反应的势能面静态特征.     

硼掺杂对稀土贮氢合金相结构和电化学性能的影响

研究了用B掺杂替代A1对AB5型稀土贮氢合金相结构和电化学性能的影响.对M1Ni3.55Co0.75Mn0.4Al0.3-xBx(x=0,0.1,0.2,0.3)合金的研究结果表明:掺B后贮氢合金出现了CeCo4B第二相,导致贮氢合金的电化学容量下降;随B含量的增加和A1含量的减少,氢的扩散系数明显上升,合金的极化电阻减小,合金的高倍率放电性能和低温性能得到明显改善.     

高灵敏度氯离子选择电极的研究

本文试制了一种以Hg_2Cl_2为电化学活性物质的高灵敏度氯离子选择电极。该电极在溶液PH<3,〔C1~-〕=10~-1—4×10~6M范围内,电极电位与1g〔C1-〕符合线性关系,其斜率为59mv/p〔C1~-〕,线性检出下限可达4×10~-8M,比一般氯离子选择电极的灵敏度高一个数量级以上。该电极的结构简单,制造方便,响应时间快,性能也比较稳定,并具有一定的选择性。曾将实验测定的电极电位和理论计算值比较,可以认为该电极同甘汞电极的性质是相似的。     

掺杂Mo的LiFePO4正极材料的电化学性能

通过固相法以(NH4)6Mo7O24·4H2O为钼源, 在氮气气氛下合成出掺杂Mo的LiFePO4正极材料. 采用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、扩展X射线吸收精细结构(EXAFS)和正电子湮没进行结构表征, 通过不同放电倍率研究掺Mo的LiFePO4电化学性能. 结果表明, 掺Mo的LiFePO4呈橄榄石结构, Mo6+同时占据着Fe位及Li位, 提高了LiFePO4的电导率, 1C放电可逆容量为141 mAh·g-1, 表现出良好的电化学性能.     

CeO2掺量对铝硼硅玻璃固化体抗浸出性能的影响

通过XRD、XPS、SEM和ICP-MS等表征方法,研究不同掺量下CeO2在铝硼硅玻璃固化体中物相的变化及其对抗浸出性能的影响。结果表明:玻璃网络结构中nCe4+∶nCe3+=9.25∶1,且CeO2质量分数达到或超过7%时,固化体内开始析出方铈矿晶体结构。1 d时随着CeO2掺量的增加,玻璃固化体rCe先降低后升高,28 d时则表现出逐渐降低的趋势。而在同一CeO2掺量下,rCe随浸出时间的延长逐渐降低,其中CeO2质量分数为9%的玻璃样品bE的rCe在7 d后稳定在4×10-6g.m-2.d-1以下,抗浸出性能较为优异。因此控制CeO2在一定范围内过量析出,可获得抗浸出性能优于完全溶于玻璃体的固化体。     

二十面体病毒及其衣壳蛋白质

许多病毒具有二十面体结构。本文对已经发现的各种二十面体病毒进行了分类,分析了二十面体病毒衣壳的结构特征,阐述了二十面体病毒的结构蛋白。     

不饱和类硅烯H2C=SiNaF的DFT研究

用密度泛函理论方法, 在B3LYP/6-31+G(d, p)水平上研究了不饱和类硅烯H2C=SiNaF的结构. 结果表明, 不饱和类硅烯H2C=SiNaF共有四种平衡构型, 其中非平面的p-配合物型构型能量最低, 是不饱和类硅烯H2C=SiNaF存在的主要构型. 对平衡构型间异构化反应的过渡态进行了计算, 求得了转化势垒. 计算预言了最稳定构型的振动频率和红外强度.     

硼掺杂对稀土贮氢合金相结构和电化学性能的影响

研究了用B掺杂替代Al对AB5型稀土贮氢合金相结构和电化学性能的影响。对M1Ni3．55Co0．75Mn0.4Al0．3-xBx（x=0，0．1，0．2，0．3）合金的研究结果表明：掺B后贮氢合金出现了CeCo4B第二相，导致贮氢合金的电化学容量下降；随B含量的增加和Al含量的减少，氢的扩散系数明显上升，合金的极化电阻减小，合金的高倍率放电性能和低温性能得到明显改善。     

A Theoretical Study on the Conductivity of Carbon Doped BNNT

From the changes in energy band, density of state (DOS) and electronic structure calculated by the DFT/B3LYP method, the conductivity of carbon doped boron‐nitride nanotube (BNNT), which is formed by C‐C bond substituting B‐N bond, was discussed. The results indicate that the substitution will strengthen the conductivity of the tube, and its semi‐conductivity might be adjusted by controlling the substitution.     

Estimation of the upper limit of carbon concentration in boron carbide crystals

The existence of a boron carbide phase with ∼25 at % carbon was proven experimentally. To evaluate the maximum possible concentration of C atoms in boron carbide (B_{12 − x} C _x )(BC₂) crystals, we performed quantum-chemical calculations of (B_{12 − x} C _x )(BH₂)₆(CH₃)₆ model compounds (x = 0–4; the goal of calculations was to determine the upper limiting number of C atoms in the B_{12 − x} C _x icosahedron) by the density functional theory method (B3LYP, 6-31G** basis set, full geometry optimization). A comparison of the experimental and calculated data showed that the calculations of the model compounds reproduced the experimental dependences of the structural parameters of the icosahedron (mean bond length and volume) on the number of C atoms in it. The icosahedra were found to be stable at x ≤ 3. According to the results of the quantum-chemical calculations, the maximum carbon concentration in boron carbide was 33 at %, which corresponded to the composition B₁₀C₅ and the structural formula (B₉C₃)(BC₂).     

Carbon in boron carbide: The crystal structure of B<Subscript>11.4</Subscript>C<Subscript>3.6</Subscript>

A single crystal of boron carbide obtained from a self-propagating high-temperature synthesis (SHS) product was studied by X-ray crystallography: B_11.4C_3.6, a = 5.594(2) Å, c = 11.977(7) Å, V = 324.6(7) ų, space group R3m, Z = 3, ρ_calcd = 2.56 g/cm³, R = 0.048. The content of carbon in the single crystal was estimated at ～24 at % from analysis of the unit cell parameters, bond lengths, and the volume of B_{12 ? x} C _x icosahedra, which demonstrated the possibility of obtaining by SHS carbon-rich boron carbide crystals due to the substitution of carbon atoms for boron atoms in icosahedra. Comparison of the X-ray crystallographic data for single crystals of boron carbide with the results of quantum-chemical calculations (an ab initio method (the 3–21G basis set) with geometry optimization) showed that the C-B-C group in a crystal has a nonlinear structure.     

The morphology of ceramic phases in BxC-SiC-Si infiltrated composites

The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B₄C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system.     

Synthesis, crystal structure, and properties of two modifications of MgB(12)C(2)

Single crystals of two modifications of the new magnesium boride carbide MgB(12)C(2) were synthesized from the elements in a metallic melt by using tantalum ampoules. Crystals were characterized by single-crystal X-ray diffraction and electron microprobe analysis (energy-dispersive (EDX) and wavelength-dispersive (WDX) X-ray spectroscopy). Orthorhombic MgB(12)C(2) is formed in a Cu/Mg melt at 1873 K. The crystal structure of o-MgB(12)C(2) (Imma, Z=4, a=5.6133(10), b=9.828(2), c=7.9329(15) A, 574 reflections, 42 variables, R(1)(F)=0.0208, wR(2)(I)=0.0540) consists of a hexagonal primitive array of B(12) icosahedra with Mg atoms and C(2) units in trigonal-prismatic voids. Each icosahedron has six exohedral B--B and six B--C bonds. Carbon is tetrahedrally coordinated by three boron atoms and one carbon atom with a remarkably long C--C distance of 1.727 A. Monoclinic MgB(12)C(2) is formed in an Al/Mg melt at 1573 K. The structure of m-MgB(12)C(2) (C2/c, Z=4, a=7.2736(11), b=8.7768(13), c=7.2817(11) A, beta=105.33(3) degrees , 1585 reflections, 71 variables, R(1)(F)=0.0228, wR(2)(I)=0.0610) may be described as a distorted cubic close arrangement of B(12) icosahedra. Tetrahedral voids are filled by C atoms and octahedral voids are occupied by Mg atoms. The icosahedra are interconnected by four exohedral B--B bonds to linear chains and by eight interstitial C atoms to form a three-dimensional covalent network. Both compounds fulfill the electron-counting rules of Wade and Longuet-Higgins.     

Synthesis, structure, and high-temperature thermoelectric properties of boron-doped Ba8Al14Si31 clathrate I phases

Single crystals of boron-doped Ba8Al14Si31 clathrate I phase were prepared using Al flux growth. The structure and elemental composition of the samples were characterized by single-crystal and powder X-ray diffraction; elemental analysis; and multinuclear (27)Al, (11)B, and (29)Si solid-state NMR. The samples' compositions of Ba8B0.17Al14Si31, Ba8B0.19Al15Si31, and Ba8B0.32Al14Si31 were consistent with the framework-deficient clathrate I structure Ba8Al(x)Si(42-3/4x)cube(4-1/4x) (x = 14, cube = lattice defect). Solid-state NMR provides further evidence for boron doped into the framework structure. Temperature-dependent resistivity indicates metallic behavior, and the negative Seebeck coefficient indicates that transport processes are dominated by electrons. Thermal conductivity is low, but not significantly lower than that observed in the undoped Ba8Al14Si31 prepared in the same manner.     

系列异三核铬、锰、铁羧酸配合物的FAB-MS研究

进行了系列异三核羧酸配合物〔Ｍ２Ｍ＇Ｏ（Ｏ２ＣＲ）６Ｐｙ３ 〕Ｘ （Ｍ, Ｍ＇ ＝ Ｃｒ, Ｆｅ,Ｍｎ; Ｒ＝ Ｈ, ＣＨ３, Ｃ２Ｈ５, Ｐｙ＝ 吡啶; Ｘ ＝ Ｏ２ＣＨ, Ｏ２ＣＥｔ, Ｃｌ, ＣｌＯ４）的快原子轰击质谱（ＦＡＢ－ＭＳ）研究, 观察到异三核的２ 类重组反应： 第１ 类生成含有〔Ｍ３〕和〔Ｍ２Ｍ＇〕两种碎片离子, 第２ 类则生成含有〔Ｍ３〕, 〔Ｍ２Ｍ＇〕, 〔ＭＭ＇２〕和〔Ｍ＇３〕等４ 种不同组合的碎片离子。文中初步探讨了进行２ 类重组反应的原因和规律。根据所提出的规律确定了金属离子反应速率的顺序为Ｃｒ ＞ Ｆｅ ＞ Ｍｎ。     

Crystal Structures of Two New Monoprotonated Products of 1,4,7 trimethyl-1,4,7-triazacyclononane: (Me_3〔9〕aneN_3H)(SO_3CF_3) and (Me_3〔9〕aneN_3H)I

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Synthesis and Crystal Structure of ｛( P Ph_3)_2 Cl Ru( μ- Cl) Ru( P Ph_3) B_(10)H_7〔 O C H( C H_3)_2〕_3｝·0 .4( H_2O)

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