Temperature accelerated dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films

The dielectric breakdown strength of carbon doped silicon dioxide thin films with thickness d from 32 nm to 153 nm is determined at 25 °C, 50 °C, 100 °C, 150 °C and 200 °C, using I–V measurements with metal-insulator-semiconductor (MIS) structures. It is found that the dielectric breakdown strength, E_B, decreases with increasing temperature for a given film thickness. In addition, a film thickness dependence of breakdown is also observed, which is argued to show an inverse relation to thickness d in the form of E_B∝(d-d_c)^-n. The exponential parameter n and critical thickness limit d_c also exhibit temperature dependent behavior, suggesting a temperature accelerated electron trapping process. The activation energy for the temperature acceleration was shown to be thickness dependent, indicating a thickness dependent conduction mechanism. It is thereafter demonstrated that for relatively thick films (thickness >50 nm), the conduction mechanism is Schottky emission. For relatively thin films (thickness <50 nm), the Schottky conduction mechanism was obeyed at low field region while FN tunnelling was observed as a prevail one in the high field region. PACS 73.40.Qv     

Barkhausen effect in magnetic thin films: Experimental noise spectra

In this paper Barkhausen noise spectra are shown that were measured on thin uniaxial 83-17 Ni?Fe films and these spectra were compared with the known magnetic behaviour of these films. On these types of sample the Barkhausen effect had been investigated by Lambeck [1], but their Barkhausen noise spectra have not been investigated so far. The film thicknessd _m in our experiments ranged between 400 and 2400 Å. In this range a change occurs in the dynamics of the magnetization behaviour caused by transitions of the type of domain wall. The results presented here show the very strong dependence of the Barkhausen noise spectra on the type of domain wall. Films with Bloch walls always show a frequency dependence off ^?1.7 in the higher frequency range. Samples in the thickness range where the transition occurs from the Néel wall via the cross-tie wall to the Bloch wall, have exponents between ?1 and ?2. The frequencyf _c above which the measured noise intensity begins to decrease varies very much for the different films. The curve off _c versus film thicknessd _m has the same form as the curve of the domain wall mobilitym versusd _m.     

‘In-situ’ ink-jet printed Fe-doped MgO thin films with tunable ferromagnetism

Magnetism in wide band gap materials is of great interests for future spintronic device applications. We prepared MgO and Fe-doped MgO films ‘in-situ’ on substrates by inkjet printing, and investigated the ferromagnetism tuned by the doping of Fe, the annealing temperature and the film thickness. It is found that the Fe-doping improves the crystallinity of the films with lattice structure changed by annealing temperature. The saturation magnetization (M_s) of the films enhanced by ~5 times comparing with the pure MgO thin film of similar thickness (~90 nm), because of both the long-range ordering of localized 3d electrons in Fe and the defects induced magnetism. The M_s at 5 K decreases with the film thickness, which is mainly attributed to the interface induced ferromagnetism. The Fe-doped MgO films with ferromagnetism in this work can be used in future spintronic devices.     

Spin-wave resonance in Co/Pd magnetic multilayers and NiFe/Cu/NiFe three-layered films

The spectrum of standing spin waves has been detected by the ferromagnetic resonance method in NiFe(740 Å)/Cu/NiFe(740 Å) three-layered film structure in the perpendicular configuration for the copper thickness d _Cu ≤ 30 Å. At thicknesses d _Cu > 30 Å, the resonance absorption curve is a superposition of two spinwave resonance spectra from individual ferromagnetic NiFe layers. For Co/Pd multilayer films, united spinwave responance spectra have also been observed at thicknesses of the paramagnetic palladium layer up to d _Pd < 30 Å. The partial exchange stiffness has been calculated for a spin wave propagating across the Pd layer (A _Pd = 0.1 × 10^?6 erg/cm). This value is always positive (up to the critical thickness of the palladium interlayer d _Pd < d _c) or equal to zero (d _Pd > d _c).     

An alternative model to the two-magnon magnetic relaxation process in permalloy films

The thickness dependence of the linewidth difference for parallel and perpendicular ferromagnetic resonance in permalloy films at x-band and room temperature is calculated for the exchange conductivity-constant damping theory and is compared with experiment. The results are in good agreement for thin (d< 800 Å) and thick (d > 1500 Å) films. The data show a somewhat greater difference than the theory for intermediate thickness. The result indicate that a previously proposed two-magnon interpretation for the observed difference may be inappropriate.     

Ellipsometric measurements on vapor deposited organic films

It has been demonstrated that ellipsometry can be used to study the kinetic properties of organic materials deposited, under vacuum, as thin films on optical surfaces. The organic films were deposited in a controlled manner using a vapor effusion source. Evaporation rate measurements on a DC-704 silicone oil film over a thickness range of 140 to 10 Å have shown that the film exists as two distinct layers with a transition thickness of ~18 Å. The second layer (d > 18 Å) exhibits an linear evaporation rate corresponding to that of the bulk fluid at 300 K while the first layer has a value two orders of magnitude smaller. The first layer was interpreted as a single monolayer having a thickness equal to the helix diameter of the silicone molecule. Additional measured kinetic properties were the sticking coefficients and vapor pressure tor various substrate temperatures and the molecular binding energy. The measured values of Δ and ψ were used to determine the optical constants of both DC-704 and DC-705 silicone oil films as N = 1.5 l — i0.00 and 1.48 — i0.00, respectively, where N = n — ik.     

Dielectric properties of Sb2O3 films

A study has been made of the dielectric constant, dielectric loss, electrical conductivity in weak and strong fields, and the dielectric strength of polycrystalline Sb₂O₃ films produced by vacuum evaporation. Electronic polarization is shown to dominate in these films. The nonlinear voltage dependence of the current in strong fields is easily explainable in terms of a Frenkel mechanism for electrostatic ionization. The film breakdown is due to impact ionization of impurities and the formation of a shower.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 5, pp. 52–55, May, 1969.     

Glass transitions and dynamics in thin polymer films: dielectric relaxation of thin films of polystyrene

The glass transition temperature T(g) and the temperature T(alpha) corresponding to the peak in the dielectric loss due to the alpha process have been simultaneously determined as functions of film thickness d through dielectric measurements for polystyrene thin films supported on glass substrate. The dielectric loss peaks have also been investigated as functions of frequency for a given temperature. A decrease in T(g) was observed with decreasing film thickness, while T(alpha) was found to remain almost constant for d>d(c) and to decrease drastically with decreasing d for d相似文献   

Electrical breakdown as an insulator-to-metal transition

The effect of dielectric strengthening under electrical breakdown in thin oxide films and other materials is discussed. The breakdown phenomenon is considered as an insulator-to-metal phase transition. The effect of strengthening is thus associated with the fact that no phase transition seems to be possible when the system size is decreased below a certain characteristic length d _c (it is a so-called ‘tachyon instability’). This dimension is estimated to be d _c?～?ξ, where ξ is the correlation length for metal–insulator transition.     

A layer of reduced switchable polarisation in (Pb,La)TiO3 films leading to a thickness dependence of the ferroelectric parameters

Two sets of ferroelectric (Pb,La)TiO₃ thin films have been prepared by a diol-based sol-gel technique by varying the heating rate to the crystallisation temperature of 650°C. Films of increasing thickness were obtained by repeating the solution deposition from 1 to 5 times. The switchable polarisation was evaluated from hysteresis loops and from the integration of the switching current transients during pulse tests, and was found to significantly depend on film thickness. Measurements of the thickness dependence of the reciprocal capacitance and Rutherford backscattering spectrometry results indicate that a layer with different dielectric permittivity, and composition for one set of films, existed next to the bottom electrode. In the one set of films it originated because of interdiffusion between the film and the substrate, while in the other set, it was linked to the tensile stress at the film/substrate interface. These layers had a reduced switchable polarisation, which caused the observed dependence of their properties on thickness.     

Self-injection length in La0.7Ca0.3MnO3-YBa2Cu3O7-δ ferromagnet-superconductor multilayer thin films

We have carried out extensive studies on the self-injection problem in barrierless heterojunctions between La_0.7Ca_0.3MnO₃ (LCMO) and YBa₂Cu₃O_7-δ (YBCO) thin films. The heterojunctions were formed in situ by sequentially growing LCMO and YBCO films on 〈100〉 LaAlO₃ (LAO) substrate using a pulsed laser deposition (PLD) system. YBCO micro-bridges with 64 μm width were patterned both on the LAO (control) and LCMO side of the substrate. Critical current, I _c, was measured at 77 K on both the control side as well as the LCMO side for different YBCO film thickness. It was observed that while the control side showed a J _c of ∼ 2 × 10⁶ A/cm², the LCMO side showed about half the value for the same thickness (1800 ?). The difference in J _c indicates that a certain thickness of YBCO has become ‘effectively’ normal due to self-injection. From the measurement of J _c at two different thicknesses (1800 ? and 1500 ?) of YBCO films both on the LAO as well as the LCMO side, the value of self-injection length (at 77 K) was estimated to be ∼ 900 ?. To the authors’ best knowledge, this is the first time that self-injection length has been quantified. A control experiment carried out with LaNiO₃ deposited by PLD on YBCO did not show any evidence of self-injection.     

Structure and electrical conductivity of ultrathin Ni-Cu films

The structure, phase composition, morphology, and electrical conductivity of Ni-Cu alloy ultrathin films having a thickness of d = 1?10 nm and a Cu concentration of 10–95 at % have been studied. All films are shown to be fcc Ni-Cu alloys; they have an island structure with an island size of 1.5–2 nm in the as-deposited films and of about 20 nm in the films annealed to 700 K. The electrical conductivity of the films depends on their thickness and morphology. For films with d ≈ 1 nm, the electrical conductivity is thermally activated with an activation energy E _a ≈ 0.086?0.095 eV. Films with d > 3 nm exhibit the metallic temperature dependence of electrical conductivity with a positive temperature coefficient of resistivity.     

Crystallization Kinetics of Lamellar Crystals Confined in Polymer Thin Films

We used dynamic Monte Carlo simulations to investigate the crystallization kinetics of flat-on lamellar polymer crystals in variable thickness films. We found that the growth rates linearly reduced with decreasing film thickness for the films thinner than a transition thickness d_t , while they were constant for the films thicker than d_t . Moreover, the mean stem lengths (crystal thickness) we calculated decreased with film thickness in a similar way to the growth rates, and the intramolecular crystallinities we calculated confirmed the film thickness dependence of the crytsal thickness. Besides, the crystal melting rates in thin films were calculated and increased with decreasing film thickness. We proposed a new interpretation on the film thickness dependence of the crystal growth rate in thin films, suggesting that it is dominated by the crystal thickness in terms of the driving force term (l–l _min) expressed by Sadler, rather than the chain mobility based on experiments. The crystal thickness can determine whether a crystal grows or melts in a thin film at a fixed temperature, indicating the reversibility between the crystal growth and melting.     

Thickness dependence of optical parameters for ZnTe thin films deposited by electron beam gun evaporation technique

Zinc telluride thin films with different thicknesses have been deposited by electron beam gun evaporation system onto glass substrates at room temperature. X-ray and electron diffraction techniques have been employed to determine the crystal structure and the particle size of the deposited films. The stoichiometry of the deposited films was confirmed by means of energy-dispersive X-ray spectrometry. The optical transmission and reflection spectrum of the deposited films have been recorded in the wavelength optical range 450-2500 nm. The variation of the optical parameters, i.e. refractive index, n, extinction coefficient, k, with thickness of the deposited films has been investigated. The refractive index dispersion in the transmission and low absorption region is adequately described by the single-oscillator model, whereby the values of the oscillator strength, oscillator position, dispersion parameter as well as the high-frequency dielectric constant were calculated for different film thickness. Graphical representations of the surface and volume energy loss function were also presented.     

The size effect of Ba0.6Sr0.4TiO3 thin films on the ferroelectric properties

Barium strontium titanate (BST) thin films were prepared by RF magnetron sputtering. The dielectric constant-voltage curves and the hysteresis loops of BST thin films with different grain sizes and film thicknesses were investigated. When the grain size increases from 12 nm to 35 nm, remarkable increases in dielectric constant and tunability were observed. Above 12 nm, the BST films exhibited size effects, i.e. a decrease in maximal polarization (P_m) and an increase in coercive electric field (E_c) with reduction in grain size. In our investigation, the dielectric constant, tunability and maximal polarization increased as the film thickness increased. Furthermore, the size dependence of the dielectric constant and tunability of Ba_0.6Sr_0.4TiO₃ thin films is determined by that of the maximal polarization and the coercive electric field.     

Substrate effects on the microstructure of hydrogenated amorphous carbon films

In this work, plasma enhanced chemical vapour deposition was used to prepare hydrogenated amorphous carbon films (a-C:H) on different substrates over a wide range of thickness. In order to observe clear substrate effect the films were produced under identical growth conditions. Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopies were employed to probe the chemical bonding of the films. For the films deposited on silicon substrates, the Raman I_D/I_G ratio and G-peak positions were constant for most thickness. For metallic and polymeric substrates, these parameters increased with film thickness, suggesting a change from a sp³-bonded hydrogenated structure to a more sp² network, NEXAFS results also indicate a higher sp² content of a-C:H films grown on metals than silicon. The metals, which are poor carbide precursors, gave carbon films with low adhesion, easily delaminated from the substrate. The delamination can be decreased/eliminated by deposition of a thin (∼10 nm) silicon layer on stainless steel substrates prior to a-C:H coatings. Additionally we noted the electrical resistivity decreased with thickness and higher dielectric breakdown strength for a-C:H on silicon substrate.     

Ferromagnetic and spin-wave resonance in Ni0.8Fe0.2/Dy1−x Cox bilayer films

The standing spin wave spectra of Ni_0.8Fe_0.2(1000–3000 Å)/(Dy_1?x Co_x(700 Å) bilayer exchange-biased films with two different (precompensation Dy_0.2Co_0.8 and postcompensation Dy_0.3Co_0.7) compositions of the hard magnetic layer are analyzed. Measurements are performed at room temperature. It is found that the effective magnetic layer thickness (d _eff=d ₀±Δd), which determines the wave vectors of the first modes in the spectrum, differs from the d ₀ value specified in film technology. The sign of |Δd| ～ 500 Å is governed by the composition of the DyCo hard magnetic layer.     

Mobility of electrons on a liquid-helium film with a rough substrate

The origin of the specific activation-type behavior of the mobility of electrons on liquid-helium films with different kinds of substrates is discussed. The characteristic feature of the activation energy E _a observed in the experiment is its dependence on the effective film thickness d in the form E _a∝d _?2. A scenario of this effect is proposed with consideration for the roughness of the substrate underlying the liquid-helium film.     

150?快速热氮化SiO2膜的击穿特性

对具有器件质量的150?厚SiO₂膜经传统的长时间热氮化和高温快速热氮化后,研究了其击穿特性及其在高场强下的耐久力。研究结果表明,氮化后击穿场强的分布变窄,对栅电极面积的依赖性减弱,最大击穿场强略微下降。热氮化对高电场下SiO₂/Si界面稳定性和决定于时间的介质击穿均有改善。这种改善既取决于所加栅电压的极性,又强烈依赖于氮化工艺条件。根据电流传输机构,本文提出一种考虑了电荷积累、陷阱密度及其重心位置的击穿模型。 关键词：     

Gradient-stress on polarization in Ba1−x Sr x TiO3 films

A group of position-thickness-dependent stresses are used to modified Landau-Devonshire theory to investigate the second-order phase transition in Ba_1?x Sr _x TiO₃ films. The result shows that the short-range interaction between the unit cells of the film and the substrate induces the phase transition dispersion and the rise of the transition temperature in the films. The dependence of the effective dielectric constant on the temperature and the average spontaneous polarization on the film thickness are computed, which qualitatively agree with the experiments.