Effect of thermal annealing on the structure of ZnSe/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocomposite films

The ZnSe/Al₂O₃ nanocomposite films synthesized by laser evaporation followed by heat treatment are studied. X-ray diffraction and electron-microscopic investigations of the as-deposited films demonstrate the presence of ZnSe crystallites in an Al₂O₃ amorphous matrix. Annealing changes the structures of ZnSe and Al₂O₃, increases the ZnSe crystallite size, and causes the appearance of the ZnSeO₄ phase. The presence of aluminum oxide layers decreases the phase transformation temperature of zinc selenide.     

Modeling and preparation of practical optical filters

Multilayer bandpass and bandstop filters have been produced using electron beam evaporation. Initially bandstop filter is modeled with non absorbing zinc sulphide (ZnS) and zinc selenide (ZnSe). When the absorption data was incorporated for the said materials significant absorption was observed at shorter wavelengths of the spectral band restricting the practical usage of the filter. ZnS and ZnSe were then replaced by dispersive silicon dioxide (SiO₂), tantalum penta oxide (Ta₂O₅) and titanium dioxide (TiO₂) along with their absorption and the filters are optimized to get desired bandpass and bandstop data. Bandpass and bandstop filters with desired performance were experimentally characterized with two combinations SiO₂/Ta₂O₅/glass and SiO₂/TiO₂/glass. The measured average transmission for both combination (bandpass) in the pass band was about 92% with T < 1% in the stop band. Slightly narrow bandwidth was observed for SiO₂/TiO₂/glass as compared to SiO₂/Ta₂O₅/glass which is attributed to layers densification. Similarly T_avg ⩾ 80% was achieved for two combinations of bandstop filters with T < 0.1% in the stop band. The structure and surface morphology of the prepared filters were characterized by X-ray diffraction and scanning electron microscopy. XRD analysis reveals amorphous structure. SEM analysis also reveals that the layers are compact and have good surface quality.     

Optical and magnetooptical properties of CoFeB/SiO<Subscript>2</Subscript> and CoFeZr/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> granular magnetic nanostructures

The optical and magnetooptical properties of the new granular nanocomposites (CoFeB)/(SiO₂) and (CoFeZr)/(Al₂O₃), which are grains of amorphous ferromagnetic alloys embedded in dielectric matrices, have been studied. The dependence of the optical, magnetooptical, and magnetic properties of the nanocomposites on their qualitative and quantitative composition, as well as on the conditions of their preparation, was investigated. Spectra of the dielectric functions ε = ε₁ ? iε₂ were obtained by the ellipsometric method in the range 0.6–5.4 eV. Above 4.2 eV, the absorption coefficient of the (CoFeB)/(SiO₂) composites was found to be close to zero for all magnetic-grain concentrations. The polar Kerr effect measured at a photon energy of 1.96 eV in dc magnetic fields of up to 15 kOe reaches values as high as 0.25°–0.3° for these nanocomposites and depends only weakly on the conditions of preparation. On the other hand, the (CoFeZr)/(Al₂O₃) nanostructures reveal a considerable difference in the concentration dependences of the Kerr effect between samples prepared in a dc magnetic field and in zero field.     

Novel chemical synthetic route and characterization of zinc selenide thin films

Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap ‘E_g’ for the film was found to be 2.81 eV and electrical conductivity in the order of 10⁻⁸(Ω cm)⁻¹ with n-type conduction mechanism.     

Spectral Ellipsometry of Multilayer ZnS/ZnSe Heterostructures

By the method of spectral ellipsometry with binary modulation of the polarization state the dispersions of the refractive index n, absorption coefficient k, and layer thickness in ZnS/ZnSe multilayer structures grown by the chemical gasphase deposition method from heteroorganic compounds on GaGaAssubstrates with ZnSe buffer layers have been determined. The efficiency of local ellipsometric measurements (with a light beam size less than 150 × 500 m) permitting mapping of the parameters of structures with A²B⁶ layers up to a few microns thick has been demonstrated. The optical properties of oxide layers formed on the zinc selenide surface have been investigated. Multilayer structures (ZnSe/ZnS) _n /ZnSe/GaAs with a pronounced exciton absorption and specific features in the reflection spectra coinciding in energy with exciton transitions, as well as Bragg mirrors with a reflection coefficient up to 99% in the blue region of the spectrum, have been studied.     

Magnetic Core/Shell Nanocomposites MgFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/SiO<Subscript>2</Subscript> for Biomedical Application: Synthesis and Properties

Magnetic core/shell (CS) nanocomposites (MNCs) are synthesized using a simple method, in which a magnesium ferrite nanoparticle (MgFe₂O₄) is a core, and an amorphous silicon dioxide (silica SiO₂) layer is a shell. The composition, morphology, and structure of synthesized particles are studied using X-ray diffraction, field emission electron microscopy, transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), scattering electrophoretic photometer, thermogravimetric analysis (TGA), and Mössbauer spectroscopy. It is found that the MgFe₂O₄/SiO₂ MNC has the core/shell structure formed by the Fe?O–Si chemical bond. After coating with silica, the MgFe₂O₄/SiO₂ MNC saturation magnetization significantly decreases in comparison with MgFe₂O₄ particles without a SiO₂ shell. Spherical particles agglomerated from MgFe₂O₄ nanocrystallites ～9.6 and ～11.5 nm in size function as cores coated with SiO₂ shells ～30 and ～50 nm thick, respectively. The total size of obtained CS MNCs is ～200 and 300 nm, respectively. Synthesized CS MgFe₂O₄/SiO₂ MNCs are very promising for biomedical applications, due to the biological compatibility of silicon dioxide, its sizes, and the fact that the Curie temperature is in the region required for hyperthermal therapy, 320 K.     

Properties of an Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si interface

The phase chemical composition of an Al₂O₃/Si interface formed upon molecular deposition of a 100-nm-thick Al₂O₃ layer on the Si(100) (c-Si) surface is investigated by depth-resolved ultrasoft x-ray emission spectroscopy. Analysis is performed using Al and Si L_{2, 3} emission bands. It is found that the thickness of the interface separating the c-Si substrate and the Al₂O₃ layer is approximately equal to 60 nm and the interface has a complex structure. The upper layer of the interface contains Al₂O₃ molecules and Al atoms, whose coordination is characteristic of metallic aluminum (most likely, these atoms form sufficiently large-sized Al clusters). The shape of the Si bands indicates that the interface layer (no more than 10-nm thick) adjacent to the substrate involves Si atoms in an unusual chemical state. This state is not typical of amorphous Si, c-Si, SiO₂, or SiO_x (it is assumed that these Si atoms form small-sized Si clusters). It is revealed that SiO₂ is contained in the vicinity of the substrate. The properties of thicker coatings are similar to those of the 100-nm-thick Al₂O₃ layer and differ significantly from the properties of the interfaces of Al₂O₃ thin layers.     

Coaxial ZnO/SiO<Subscript>2</Subscript> nanocables fabricated by thermal evaporation/oxidation

ZnO/SiO₂ coaxial nanocables have been synthesized on silicon substrates by simply evaporating zinc powder under an argon and argon/oxygen mixed atmosphere sequentially. The diameters of these nanocables vary from 50 to 100 nm and the lengths up to several millimeters. Electron microscopy and chemical composition investigations reveal that the nanocable consists of a crystalline ZnO core surrounded by an amorphous silica sheath. The electron diffraction pattern proves that the long-axis direction of ZnO cores grows along the [0001] direction. Silica nanotubes with wall structures have been obtained by the selective dissolution of the cores with hydrochloric acid. PACS 81.10.Bk; 81.05.Hd     

Hydrogen solubility in amorphous Mg<Subscript>0.6</Subscript>SiO<Subscript>2.6</Subscript> at high pressure

The solubility of hydrogen in amorphous Mg_0.6SiO_2.6 at a temperature of 250°C and pressures up to 75 kbar is studied using a quenching technique. The molar ratio H₂/formula unit is found to nonlinearly increase with pressure from x = 0.12 at P = 10 kbar to x = 0.303 at P = 75 kbar. An investigation of the quenched samples by Raman spectroscopy demonstrated that hydrogen dissolves in amorphous Mg_0.6SiO_2.6 in the form of H₂ molecules. X-ray diffraction and Raman studies showed that the hydrogenation of the samples is likely to be accompanied by a phase transition in the amorphous lattice of Mg_0.6SiO_2.6 at P ≈ 52.5 kbar to a denser amorphous modification.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

反应溅射VN/SiO2纳米多层膜的微结构与力学性能

采用V和SiO₂靶通过反应溅射方法制备了一系列具有不同SiO₂和VN调制层厚的VN/SiO₂纳米多层膜. 利用X射线衍射、X射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明：在Ar，N₂混和气体中，射频反应溅射的SiO₂薄膜不会渗氮. 单层膜时以非晶态存在的SiO₂，当其厚度小于1nm时，在多层膜中因VN晶体层的模板效应被强制晶化，并与VN层形成共格外延生长. 相应地，多层膜的硬度得到明显提高，最高硬度达34GPa. 随SiO₂层厚度的进一步增加，SiO₂层逐渐转变为非晶态，破坏了与VN层的共格外延生长结构，多层膜硬度也随之降低. VN调制层的改变对多层膜的生长结构和力学性能也有影响，但并不明显. 关键词： 2纳米多层膜')" href="#">VN/SiO₂纳米多层膜 共格外延生长 非晶晶化 超硬效应     

Structure and Properties of SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Films Prepared by Chemical Etching of Amorphous Alloy Ribbons

The structure and the physical properties of amorphous SiO _x films prepared by chemical etching of an iron-based amorphous ribbon alloy have been studied. The neutron diffraction and also the atomicforce and electron microscopy show that the prepared visually transparent films have amorphous structure, exhibit dielectric properties, and their morphology is similar to that of opals. The samples have been studied by differential scanning calorimetry, Raman and IR spectroscopy before and after their heat treatment. It is found that annealing of the films in air at a temperature of 1273 K leads to a change in their chemical compositions: an amorphous SiO₂ compound with inclusions of SiO₂ nanocrystals (crystobalite) forms.     

Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells

We report on continuous-wave laser induced crystallisation processes occurring in Si/SiO₂ multiple quantum wells (MQW), prepared by remote plasma enhanced chemical vapour deposition of amorphous Si and SiO₂ layers on quartz substrates. The size and the volume fraction of the Si nanocrystals in the layers were estimated employing micro-Raman spectroscopy. It was found that several processes occur in the Si/SiO₂ MQW system upon laser treatment, i.e. amorphous to nanocrystalline conversion, Si oxidation and dissolution of the nanocrystals. The speed of these processes depends on laser power density and the wavelength, as well as on the thickness of Si-rich layers. At optimal laser annealing conditions, it was possible to achieve ∼100% crystallinity for 3, 5 and 10 nm thickness of deposited amorphous Si layers. Crystallization induced variation of the light absorption in the layers can explain the complicated process of Si nanocrystals formation during the laser treatment.     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

Mössbauer studies of magnetic Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>/SiO<Subscript>2</Subscript> nanocomposites

A large variety of glass and glass ceramics may be obtained by sol-gel process from hydrolysis of tetraethoxysilane. The transformation involves hydrolysis and polycondensation reactions leading to the growth of clusters that eventually collide together to form a gel. The structure and properties of the final product have been found to be strongly dependent on the initial conditions of preparation. Silica nanocomposites based on Fe₂O₃/SiO₂ were prepared with the help of ultrasonic activation and subsequent annealing in nitrogen atmosphere or air with concentrations of iron oxide of about 20 to 30wt.%.     

Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In<Subscript>0.2</Subscript>Ga<Subscript>0.8</Subscript>As/GaAs multiquantum-well structure by dielectric capping layers

The feasibility of normal GaAs, low-temperature-grown GaAs (LT-GaAs) and low-temperature-grown InGaAs (LT-InGaAs) as the capping layers for impurity-free vacancy disordering (IFVD) of the In_0.2Ga_0.8As/GaAs multiquantum-well (MQW) structure has been studied. The normal GaAs, LT-GaAs and LT-InGaAs layers were tested as the outermost capping layer and the intermediate cap layer underneath the SiO₂ or Si₃N₄ capping layer. The degree of quantum-well intermixing (QWI) induced by rapid thermal annealing was estimated by the shift of the photoluminescence (PL) peak energy. It was found that the IFVD of the In_0.2Ga_0.8As/GaAs MQW structure using LT-GaAs (LT-InGaAs) as the outermost capping layer was much smaller (larger) than that using a SiO₂ (Si₃N₄) capping layer. It was also observed that the insertion of the normal GaAs, LT-GaAs and LT-InGaAs cap layers below the SiO₂ or Si₃N₄ capping layer reduces the degree of QWI and the PL intensity after the QWI. A plausible explanation for the influence of normal GaAs, LT-GaAs and LT-InGaAs cap layers for the QWI of the InGaAs/GaAs structure is also discussed. PACS 68.55.Ln; 73.20.Dx; 78.55.-m     

Production and investigation of layered zinc sulfide(selenide)/insulator nanocomposites

Layered ZnS/SiO₂, ZnS/Al₂O₃, and ZnSe/SiO₂ nanocomposites have been studied. It has been shown that the use of the Maxwell–Garnett and Bruggeman models, as well as the Luyengi formula, in the low dispersion region makes it possible to predict the production of films with a given effective refractive index. Calculated values of the refractive index correlate well with experimental data. The maximal discrepancy between the theoretical and experimental values of the refractive index and the maximal value of the depolarization factor depend on the structure and microstrains.     

Optical and magnetooptical properties of FePt-SiO<Subscript>2</Subscript> magnetic nanocomposites

The magnetic, optical, and magnetooptical properties of granular (FePt)_1?x(SiO₂)_x nanocomposites in the disordered state and after heat treatment were studied. The magnetooptical response of samples in which the concentration of the metallic component approached the percolation threshold was observed to become considerably enhanced. Modeling transverse Kerr effect (TKE) spectra in a straightforward effective medium approximation provided a qualitative fit to the experimental data over a broad concentration range. The dependences of the Kerr effect on the SiO₂ concentration in the nanocomposite are not monotonic and exhibit a sharp break near the percolation threshold. An analysis of the field dependences of the TKE and magnetization curves revealed that structural changes associated with ordering in annealed FePt films occur only in nanocomposites with fairly large grains.     

Effects of LaNiO<Subscript>3</Subscript> on the structures and properties of SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films

SrBi₂Ta₂O₉(SBT)/LaNiO₃(LNO)/Si and SBT/Pt/TiO₂/SiO₂/Si multilayers were fabricated by pulsed laser deposition. With Pt top electrodes, the measured remanent polarization (2P_r) of Pt/SBT/LNO/Si and Pt/SBT/Pt/TiO₂/SiO₂/Si capacitors was 6.5 C/cm² and 5.2 C/cm², respectively. Using LNO as both bottom electrodes and buffer layers, enhanced non-c-axis crystalline SBT films were induced, which resulted in a 2P_r greater than that of the Pt/SBT/Pt/TiO₂/SiO₂/Si capacitor. The hysteresis loop of the Pt/SBT/LNO/Si capacitor showed a great external-field-dependent horizontal shift. Using an electron-injection model, this dependence was addressed. The fatigue-free property of the Pt/SBT/LNO/Si capacitor was experimentally established, in that the non-volatile polarization decreased by less than 5% of the initial value after 1.44×10⁹ switching cycles . PACS 77.84.Dy; 68.65.+g     

Large-scale potential fluctuations caused by SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> compositional inhomogeneity

The short-range order in amorphous SiO _x (0 ≤ x ≤ 2) films has been studied by high-resolution X-ray photoelectron spectroscopy. Both the random bonding and random mixture models do not describe experimental photoelectron spectra of SiO _x (x ≤ 2). An intermediate model of the SiO _x structure has been proposed. The measured photoelectron spectra of the SiO _x (x ≤ 2) valence band indicate the presence of the silicon phase and silicon oxide.