Double diffraction spots in RHEED patterns from clean Ge(111) and Si(001) surfaces

In RHEED patterns from clean Ge(111) and Si(001) surfaces, extra diffraction spots have been observed with superlattice reflection spots due to Ge(111) 2 × 8 and Si(001) 2 × 1 surface structures. The extra spots have not been found out in many previous LEED and RHEED patterns of clean Ge(111) and Si(001) surfaces. When the Ge(111) and Si(001) samples were rotated about an axis normal to the surfaces so as to vary the incident direction of the primary electron beam, the intensity of the extra spots showed a remarkable dependence upon the incident direction and they became invisible in some incident directions, in spite of the experimental condition that an Ewald sphere intersected reciprocal lattice rods of the extra spots. In this study, the extra spots are understood as forbidden reflection spots resulting from double diffraction of superlattice reflections of the surface structures, and the remarkable dependence of their intensity upon the incident direction is explained in terms of excitation of the surface wave of the superlattice reflections. These results suggest that the intensity of diffraction spots in RHEED patterns may be greatly influenced by the surface wave excitation of fundamental and superlattice reflections.     

A Mössbauer study of ultrathin Fe(110)/Ag(111) heterostructures grown by molecular beam epitaxy

We have grown good quality single crystal heterostructures of Fe(110) / Ag(111) with a high degree of epitaxy not previously achieved for films this thin. The iron-free mica substrates are transparent to gamma rays and aid in the epitaxial growth process. These films were characterized by reflection high-energy electron diffraction (RHEED), residual gas analysis (RGA), and transmission Mössbauer spectroscopy. The film with the thickest Fe component (8 monolayers) showed a hyperfine field comparable to bulk while the films with the thinnest Fe components (1.3 and 2.0 monolayers) showed an enhanced hyperfine field at 4.2 K. All the films were magnetically ordered at all the temperatures measured. Most importantly, and in contrast to other work, the direction of magnetization was in-plane for all of the films.     

The molecular dynamic study of anharmonic effects at Cu(111) and Ag(111) surfaces in the presence of Cu- and Ag-trimer island

The molecular dynamics (MD) technique based on semi-empirical potentials, is used to carry out the diffusion of Cu- and Ag-trimer on Cu- and Ag(111) surface at 300, 500 and 700 K temperatures. The constant energy MD simulation elaborates the anharmonic effects at the surface such as fissures, dislocations and vacancy creation, in the presence of island. The fissures and dislocations formed are in the range of 1.5–4 Å and 1–7 Å, respectively, from the island's position. The Cu and Ag islands both diffuse easily on Cu(111) surface, manipulate that the trend of diffusion is faster on Cu surface as compared to Ag surface. The process of breaking and opening of the island has also been observed. Moreover, a surface atom popped-up at 700 K by creating a vacancy near the Cu island on Ag surface. The rate of diffusion increases with the increase in temperature, both for homo- and hetero-cases.     

Anomalous 13 422 diffraction spots from {111} flat gold crystallites: (111) surface reconstruction and moiré fringes between the surface and the bulk

This paper describes very flat {111} gold crystallites grown on graphite. The diffraction patterns of such crystallites show the “usual” $\text{1}\text{3}$ 422 anomalous spots. It is shown that these spots are in fact split in such a way that each $\text{1}\text{3}$ 422 spot is surrounded by an hexagonal array of additional spots, aligned in the 〈110〉 directions. When seen by TEM, the crystallites show 〈112〉 periodic contrasts which are not normal moiré fringes or misfit dislocations between gold and graphite. An interpretation following Yagi et al. is proposed which connects these 2 kinds of anomalies: they should result from the surface superstructure 23 × 1 of clean (111) gold face, described very recently by Melle and Menzel.     

Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

The crystal structure of GaAs nanowhiskers grown by molecular-beam epitaxy on Si(111) and Si(100) substrates is investigated using reflection high-energy electron diffraction (RHEED). It is revealed that, in both cases, the electron diffraction images contain a combination (superposition) of systems of reflections characteristic of the hexagonal (wurtzite and/or 4H polytype) and cubic (sphalerite) phases of the GaAs compound. The growth on the Si(111) substrates leads to the formation of nanowhiskers with hexagonal (wurtzite and/or 4H polytype) and cubic (sphalerite) structures with one and two orientations, respectively. In the case of the Si(100) substrates, the grown array contains GaAs nanowhiskers that have a cubic structure with five different orientations and a hexagonal structure with eight orientations in the (110) planes of the substrate. The formation of the two-phase crystal structure in nanowhiskers is explained by the wurtzite—sphalerite phase transitions and/or twinning of crystallites.     

MgO(111)上NbN和AlN薄膜的生长研究

在制备NbN/AlN/NbN隧道结的工艺过程中,为了获得具有优质单晶结构的NbN薄膜,我们在MgO(111)基片上探索了直流溅射法制备NbN薄膜的生长工艺条件,XRD研究分析表明,我们获得了单晶结构良好的NbN薄膜;为了支持作为上电极的NbN薄膜的生长,也需要良好的AlN薄膜用作势垒层,我们采用射频磁控溅射设备和纯净的Al靶对AlN薄膜进行了制备研究.实验结果表明,所获得的AlN薄膜具有六方c-轴取向,并讨论了衬底和薄膜界面处可能的结构情况.     

Interfacial effects in electron transmission through Ag films on Cu(111)

The transmission coefficient for very low energy electrons ($\text{? 10}\text{eV}$) normally incident on thin epitaxial films of Ag on Cu(111) is modulated by reflection of the electronic wavefunction at the interfaces. The observation of such quantum size oscillations in this epitaxial system demonstrates that this effect is truly interfacial in origin.     

银和铜膜中异常晶粒生长和织构变化的实验研究

用透射电子显微镜(TEM)和x射线衍射(XRD)方法对经300℃，2h退火的Ag和Cu自由膜和Si基体上的Ag和Cu附着膜的异常晶粒生长和织构变化进行了实验研究.XRD分析表明：Ag和Cu沉积膜均有(111)和(100)择优取向.但经退火处理后，Ag和Cu自由膜的(111)织构稍有加强.相反，Si基体上的Ag和Cu附着膜的(100)和(110)织构明显加强，同时用TEM在Cu附着膜中观察到了两个(110)和四个(211)取向的异常大晶粒.根据表面能和应变能的各向异性对实验结果进行了分析.     

Umklapp-mediated quantization of electronic states in Ag films on Ge(111)

We employ angle-resolved photoemission to study the electronic structure of atomically uniform films of Ag grown on Ge(111). A new kind of quantum well state is observed near a specific emission direction away from the surface normal. In contrast with the usual quantum well state arising from electron confinement by specular reflections at the surface and interface of the film, the new kind involves retroreflections, or umklapp reflections, at the interface. It requires four reflections, instead of the usual two reflections, to complete a coherent interference path.     

分子束外延生长[111]晶向CdTe的研究

本文采用分子束外延(MBE)方法在BaF₂衬底上直接外延生长了CdTe(111)薄膜. 反射高能电子衍射(RHEED)实时监控生长表面, 衍射图样揭示了CdTe(111)在BaF₂表面由二维生长向三维生长的变化过程．XRD表征验证了外延生长的CdTe薄膜的单晶性质．由红外透射光谱测量和理论拟合相结合, 得到了CdTe外延薄膜室温带隙宽度E_g=1.511 eV.     

Dislocations on Ag(111)

Various dislocations on Ag(111) were imaged with a scanning tunneling microscope, e.g. screw dislocations, Lomer-Cottrell locks and stacking fault tetrahedron. The distortion field near a screw dislocation was measured.     

Electronic structure and ordering of multilayers of Co and Ag on Cu(111) investigated by photoelectron spectroscopy

The growth and the electronic structure of multilayers of Co and Ag on Cu(111) at room temperature have been studied with photoelectron spectroscopy and low-energy electron diffraction (LEED). The coverage range spans from Co and Ag layers between one monolayer (ML) to stacking of several monolayers. Surface states and ordered structures have been identified at room temperature. A Ag-related surface state with a binding energy of 0.30 eV is identified in normal emission in the ultraviolet photoelectron spectra when silver constitutes the top layer. Core-level binding energy shifts of Ag 3d_5/2 reflect the changing surroundings of Ag. Hexagonal diffraction patterns are observed for sandwiches of consecutive layers of Co and Ag up to 5 layers. Since no interlayer diffusion is observed in the layer-by-layer formation of the films, multilayers of consecutive silver and cobalt on Cu(111) offer preparation of sandwiched magnetic–non-magnetic structures.     

Layer-by-layer epitaxial growth of polar FeO(111) thin films on MgO(111)

We report on the structural properties of epitaxial FeO layers grown by molecular beam epitaxy on MgO(111). The successful stabilization of polar FeO films as thick as 16 monolayers (ML), obtained by deposition and subsequent oxidation of single Fe layers, is presented. FeO/MgO(111) thin films were chemically and structurally characterized using low-energy electron diffraction, Auger electron spectroscopy and conversion electron Mössbauer spectroscopy (CEMS). Detailed in situ CEMS measurements as a function of the film thickness demonstrated a size-effect-induced evolution of the hyperfine parameters, with the thickest film exhibiting the bulk-wüstite hyperfine pattern. Ex situ CEMS investigation confirmed existence of magnetic ordering of the wüstite thin film phase at liquid nitrogen temperature.     

电子衍射条件对Si(111)外延时反射式高能电子衍射强度振荡的影响

本文研究了不同电子衍射条件对Si(111)外延时的反射式高能电子衍射(RHEED)强度振荡的影响,在保持生长条件不变的情况下,沿[112]方位观测时,不同入射角下其强度振荡的相位和初始瞬态响应变化很大,甚至会发生180°相位变化,而在[011]方位观测时,其相位的变化不明显,结合Si(111)面的RHEED强度摇摆曲线测量结果,表明这种与电子衍射条件有关的振荡特性变化,实际上反映了由电子多重散射机理引起的RHEED强度振荡两种情形,对RHEED强度的初始瞬态响应机理也作了探讨。 关键词：     

Anomalous decay of electronically stabilized lead mesas on Ni(111)

With their low surface free energy, lead films tend to wet surfaces. However, quantum size effects (QSE) often lead to islands with distinct preferred heights. We study thin lead films on Ni(111) using low energy electron microscopy and selected area low energy electron diffraction. Indeed, the grown lead mesas show distinct evidence for QSE's. At about 526 K metastable mesas reshape into hemispheres within milliseconds, driven by a huge reduction in interfacial free energy. The underlying diffusion rate is many orders of magnitude faster than expected for lead on bulk lead.     

Adsorption-desorption properties and surface structural chemistry of chlorine on Cu(111) and Ag(111)

The adsorption, desorption, and structural properties of chlorine adlayers on Cu(111) and Ag(111) have been studied by LEED, Auger, Δ?, and thermal desorption measurements. Ancillary experiments were also carried out on cuprous chloride for purposes of comparison with the Cu(111)-Cl data. Chlorine adsorption is rapid on both metals and follows precursor kinetics, the absolute initial sticking probabilities being ~1.0 (Cu) and ~0.5 (Ag). Δ? results suggest that significant depolarisation of the chemisorption bond occurs at high coverages, the maximum values being + 1.2 eV (Cu) and + 1.8 eV (Ag). On Cu(111), adsorption leads to the formation of a sequence of well-ordered phases; in order of increasing coverage, these are as follows: (√3 × √3)R30°, (12√3 × 12√3)R30°, (4√7 × 4√7)R19.2°, and (6√3 × 6√3)R30°. On Ag(111) (√3 × √3)R30°, and (10 × 10) structures are observed. All six structures are susceptible to a straightforward interpretation in terms of coincidence lattices resulting from the progressive uniform compression of a hexagonal layer of Cl atoms. This interpretation is consistent with all the experimental results, and gives values for the nearest-neighbour ClCl spacing on both Cu(111) and Ag(111) which are in good agreement with other work on other surfaces. Chlorine desorbs exclusively as atoms from both metals with first-order desorption kinetics, and apparent desorption energies of 236 (Cu) and 209 (Ag) kJ mol^?1. These values, which depend on an assumed pre-exponential factor of 10¹³ s^?1, are shown to be inconsistent with the thermochemical constraints on the system necessitated by the complete absence of Cl₂ desorption. Lower limits for the pre-exponential factors are then deduced, and the values are found to be consistent with the differences between the CuCl and AgCl systems.     

常压化学气相沉积法在Ag/Si(111)模板上生长ZnO薄膜及其性能研究

在Si衬底上利用磁控溅射的方法沉积1.5 nm厚度的Ag膜用以阻挡Si衬底被氧化。采用常压金属有机化学气相沉积法(MOVCD),在Ag/Si(111)衬底上成功地生长出马赛克结构的ZnO薄膜。用光学显微镜观察表面形貌,结果显示有带晶向特征的微裂纹,裂纹密度为100 cm-1。依据X射线晶体衍射的结果,薄膜结晶质量良好,呈C轴高度择优取向。用双晶X射线衍射得到(002)面的ω扫描半峰宽为1.37°。温度10 K时光致发光谱(PL)观察到自由激子、束缚激子发射及它们的声子伴线。结果表明,金属有机化学气相沉积法方法在Si(111)衬底上制备ZnO薄膜时,Ag是一种有效的缓冲层。     

Temperature dependence of photo-hole decay in 4d derived Quantum Well States in monolayer Ag(111) films on Pd(111), Ni(111), Mo(110) and Cu(100)

We present experimental data on the temperature dependence of photo-hole decay obtained by Angle Resolved Photoemission (ARPES) measurements from 4d derived Quantum Well States (QWS) on Ag(111) monolayer films deposited on Pd(111), Ni(111), Mo(110) and Cu(100). We have found a significant increase of the Ag 4d electron–phonon (e-ph) coupling strength with respect to the bulk values. The increase is attributed to different mechanisms that are associated with the interaction of the Ag film with under laying substrate. It is proposed that the main channels that contribute to the increased e-ph coupling originate from the inter-band transitions that involve bulk states of the substrates.     

Local atomic environment of Si suboxides at the SiO2/Si(111) interface determined by angle-scanned photoelectron diffraction

Local environments of Si suboxides at the interface between a thermally grown SiO2 film and Si(111) were studied by angle-scanned photoelectron diffraction. Si 2p core-level spectra containing chemically shifted components were recorded. The components were deconvoluted by least squares fitting and assigned to different Si oxidation states. The obtained diffraction patterns of the various suboxides exhibit different features. Comparison of these patterns with multiple scattering calculations including a multipole R-factor analysis shows that a simple chemical abrupt interface model describes well the environment of the suboxides and indicates ordered SiO2 close to the interface.     

Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72nm. When the thickness of AlN buffer is 36nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72nm.