自旋轨道矩协助自旋转移矩驱动磁化强度翻转

以磁隧道结/重金属层组成的三端口磁隧道结为理论模型,通过对包含自旋转移矩和自旋轨道矩的Landau-Lifshitz-Gilbert (LLG)方程做线性化稳定性分析,研究了自旋轨道矩协助自旋转移矩驱动的磁化强度翻转.发现在自旋轨道矩协助下,磁矩的翻转时间极大减小,翻转时间随自旋轨道矩电流密度的增大而减小,且自旋转移矩和自旋轨道矩的结合可实现零磁场的磁化翻转.另外,相比自旋轨道矩的类阻尼项,类场项在磁化强度的翻转中起着主导作用,且自旋轨道矩类场项的出现也可以减小磁化强度的翻转时间,磁化强度翻转时间随自旋轨道矩类场项强度的增大而减小.     

电流感应磁化翻转效应的改进的系综模型

运用宏观双通道扩散模型研究了赝自旋阀结构中的自旋相关输运过程,考虑到磁化强度矢量的横向分量的影响,建立了自由层磁化强度矢量的动力学方程,利用自旋流连续和化学势差连续作为边界条件.理论计算求解了电流感应磁化翻转效应中的临界电流,解释了铁磁层和非磁层电导率匹配问题和纵向场对电流感应磁化翻转效应中临界电流的影响. 关键词： 赝自旋阀 电导率匹配 自旋转移扭矩 电流感应磁化翻转效应     

铝团簇的电子自旋极化与核自旋-自旋偶合的理论研究

利用传统的密度泛函理论在B3LYP/6-31 G(d)水平上优化了铝簇(Aln ,Aln与Aln-,n=2~9)的几何结构,并利用偶合的微扰的密度泛函理论在B3LYP/6-311 G(3df)水平上计算了核自旋-自旋偶合常数.优化结果表明Aln(n=2~9)中的电子是自旋极化的,与早期的质谱实验一致.核自旋-自旋偶合常数的计算结果表明电子的自旋极化与原子核的自旋取向有密切关系.     

InAs量子点中自旋-轨道相互作用下电子自旋弛豫的参量特征

本文在处理InAs单电子量子点哈密顿模型时,将自旋-轨道(SO)相互作用作为微扰项,计算在Fock-Darwin本征函数下SO相互作用的矩阵元,利用其对能级和波函数的二阶修正,并且考虑新的能级对g因子和有效质量m^*的影响,计算得到在声子协助下电子的自旋弛豫率Γ的表达式.给出了InAs量子点中声子协助的电子自旋弛豫率Γ对于限制势频率ω₀、温度T、纵向高度z_{0关键词： 自旋弛豫率 自旋-轨道(SO)相互作用 InAs量子点 Fock-Darwin本征函数}     

绿宝石晶体自旋二重态对基态能级的影响及Jahn-Teller效应

应用不可约张量方法和群的理论构造了三角对称晶场中考虑自旋 轨道相互作用,自旋 自旋相互作用和自旋 其它轨道相互作用的3d3/3d7态离子的可完全对角化的120阶微扰哈密顿矩阵.利用该矩阵计算了绿宝石晶体的基态能级、零场分裂参量,研究了自旋二重态对基态能级的贡献.理论计算值与实验值相符合,证明二重态对基态的贡献是不可忽略的.在此基础上,进一步研究了自旋 自旋相互作用、自旋 其它轨道相互作用和自旋 轨道相互作用对绿宝石晶体的光谱精细结构和零场分裂参量的影响,发现自旋 自旋和自旋 其它轨道相互作用对绿宝石晶体基态能级和零场分裂参量的影响都是不可忽略的.从而通过理论计算值和实验值的比较,证实了在绿宝石晶体中Jahn Teller效应的存在,它能够对光谱精细结构的分裂提出一些更加合理的解释.     

直接键连原子间的NMR偶合常数的自然杂化轨道研究Ⅲ、α-C-H键核自旋偶合常数1JCH

报道了一种计算直接键连原子间的核自旋-自旋偶合常数的通用关系式,结合CNDO/2分子轨道方法和自然杂化轨道方法,具体计算了一些极性α-C-H键的核自旋偶合常数。结果表明,本文方法适合于多种类型的直接键连原子间的偶合常数的计算,且与已有实验值吻合一致.     

Cr~(3 )∶MgAl_2O_4晶体的基态能级分裂及Jahn-Teller效应

构造了3d3/3d7离子在三角对称晶场中考虑自旋-轨道相互作用,自旋-自旋相互作用和自旋-其它轨道相互作用的120阶微扰哈密顿矩阵.利用完全对角化该矩阵的方法计算了Cr3 ∶MgAl2O4晶体的基态能级、零场分裂参量,理论计算值与实验值相符合.定量研究了自旋二重态对基态能级的贡献,证明该贡献是不可忽略的.定量研究了自旋-轨道相互作用、自旋-自旋相互作用和自旋-其它轨道相互作用对Cr3 ∶MgAl2O4晶体的光谱精细结构和零场分裂参量的影响,发现自旋-轨道和自旋-自旋相互作用对基态能级和零场分裂参量的影响的程度和方式是不同的,自旋-其它轨道相互作用的影响也是不可忽略的.通过理论计算值和实验值的比较,证实了在Cr3 ∶MgAl2O4晶体中Jahn-Teller效应的存在,解释了该晶体的光谱精细结构的成因.     

Cr3+∶MgAl2O4晶体的基态能级分裂及Jahn-Teller效应*

构造了3d3/3d7离子在三角对称晶场中考虑自旋-轨道相互作用,自旋-自旋相互作用和自旋-其它轨道相互作用的120阶微扰哈密顿矩阵.利用完全对角化该矩阵的方法计算了Cr3+∶MgAl2O4晶体的基态能级、零场分裂参量,理论计算值与实验值相符合.定量研究了自旋二重态对基态能级的贡献,证明该贡献是不可忽略的.定量研究了自旋-轨道相互作用、自旋-自旋相互作用和自旋-其它轨道相互作用对Cr3+∶MgAl2O4晶体的光谱精细结构和零场分裂参量的影响,发现自旋-轨道和自旋-自旋相互作用对基态能级和零场分裂参量的影响的程度和方式是不同的,自旋-其它轨道相互作用的影响也是不可忽略的.通过理论计算值和实验值的比较,证实了在Cr3+∶MgAl2O4晶体中Jahn-Teller效应的存在,解释了该晶体的光谱精细结构的成因.     

直接键连原子间的NMR偶合常数的自然杂化轨道研究Ⅲ、α─C─H键核自旋偶合常数￣（1）J＿（cH）

报道了一种计算直接键连原子间的核自旋─自旋偶合常数的通用关系式，结合ＣＮＤＯ／２分子轨道方法和自然杂化轨道方法，具体计算了一些极性α─Ｃ─Ｈ键的核自旋偶合常数。结果表明，本文方法适合于多种类型的直接键连原子间的偶合常数的计算，且与已有实验值吻合一致．     

自旋-轨道耦合对磁性绝缘体磁光Kerr效应的影响

采用单原子能级跃迁模型,导出在同时考虑自旋交换劈裂和自旋轨道耦合时磁光Kerr旋转的微观表达式,并就四能级跃迁情况,研究了磁光效应随原子基态及激发态能级自旋轨道耦合常数的变化规律.结果表明:磁光Kerr旋转角与自旋轨道耦合劈裂能量不成正比;单原子能级自旋轨道耦合常数为正或中间激发态自旋轨道耦合常数为负时,有利于提高磁光Kerr旋转. 关键词： 磁光Kerr效应 自旋轨道耦合 线性响应核 劈裂     

Biased quasiballistic spin torque magnetization reversal

We explore the ultrafast limit of spin torque magnetization reversal time. Spin torque precession during a spin torque current pulse and free magnetization ringing after the pulse is detected by time-resolved magnetotransport. Adapting the duration of the pulse to the precession period allows coherent control of the final orientation of the magnetization. In the presence of a hard axis bias field, we find optimum quasiballistic spin torque magnetization reversal by a single precessional turn directly from the initial to the reversed equilibrium state.     

Out-of-Plane Torque Influence on Magnetization Switching and Susceptibility in Magnetic Multilayers

Based on both the spin diffusion equation and the Landau-LlTshitz-Gilbert （LLG） equation, we demonstrate the influence of out-of-plane spin torque on magnetization switching and susceptibility in a magnetic multilayer system. The variation of spin accumulation and local magnetization with respect to time are studied in the magnetization reversal induced by spin torque. We also research the susceptibility subject to a microwave magnetic field, which is compared with the results obtained without out-of-plane torque.     

Effect of resistance feedback on spin torque-induced switching of nanomagnets

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.     

Anomalous bias dependence of spin torque in magnetic tunnel junctions

We predict an anomalous bias dependence of the spin transfer torque parallel to the interface, Tparallel, in magnetic tunnel junctions, which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal without a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents for the ferromagnetic (antiferromagnetic) configurations, which vary linearly (quadratically) with bias, respectively, due to the symmetric (asymmetric) nature of the barrier. The spin transfer torque perpendicular to interface exhibits a quadratic bias dependence.     

Current driven magnetization dynamics in helical spin density waves

A mechanism is proposed for manipulating the magnetic state of a helical spin density wave using a current. It is shown that a current through a bulk metal with a helical spin density wave induces a spin transfer torque, which gives rise to a rotation of the order parameter. The use of spin transfer torque to manipulate the magnetization in bulk systems does not suffer from the obstacles seen for magnetization reversal using interface spin transfer torque in multilayered systems. The effect is demonstrated by a quantitative calculation of the current induced magnetization dynamics of a rare earth metal, Er. Finally, we propose a setup for experimental verification.     

垂直自由层倾斜极化层自旋阀结构中的磁矩翻转和进动

在理论上研究了垂直自由层和倾斜极化层自旋阀结构中自旋转移矩驱动的磁矩翻转和进动.通过线性展开包括自旋转移矩项的Landau-Lifshitz-Gilbert方程并使用稳定性分析方法,得到了包括准平行稳定态、准反平行稳定态、伸出膜面进动态以及双稳态的磁性状态相图.发现通过调节电流密度和外磁场的大小可以实现磁矩从稳定态到进动态之间的转化以及在两个稳定态之间的翻转.翻转电流随外磁场的增加而增加,并且受自旋极化方向的影响.当自旋极化方向和自由层易磁化轴方向平行时,翻转电流最小;当自旋极化方向和自由层易磁化轴方向垂直时,翻转电流最大.通过数值求解微分方程,给出了不同磁性状态磁矩随时间的演化轨迹并验证了相图的正确性.     

Parameter dependence of resonant spin torque magnetization reversal

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.     

铁磁/重金属双层薄膜结构中磁性状态的稳定性分析

本文在理论上研究了铁磁/重金属双层薄膜结构中自旋霍尔效应自旋矩驱动的磁动力学. 通过线性稳定性分析, 获得了以电流和磁场为控制参数的磁性状态相图. 发现通过调节电流密度和外磁场, 可以获得不同的磁性状态, 例如: 平面内的进动态、平面内的稳定态以及双稳态. 当外磁场的方向在一定的范围时, 通过调节电流密度可以实现磁矩的翻转和进动. 同时, 通过数值求解微分方程, 给出了这些磁性状态磁矩的演化轨迹.     

石墨烯沟道全自旋逻辑器件开关特性

由于石墨烯的电导率相比典型的金属材料更大,自旋弛豫时间更长,自旋轨道相互作用更弱,从而在相同的注入电流情况下,自旋电流在石墨烯材料中的耗散作用更弱.基于自旋传输和磁化动力学耦合模型,研究了石墨烯沟道全自旋逻辑器件的开关特性.结果显示,在相同的电源电压下和器件尺寸下,石墨烯沟道材料的全自旋逻辑器件磁矩翻转时间比Cu沟道更短,流入输出纳磁体的自旋电流更大.同时,长度越短、宽度越窄的沟道其开关时间更短,功耗更小.在满足磁体磁矩翻转的临界开关电流的情况下,石墨烯沟道的可靠工作长度也显著大于Cu沟道.所以石墨烯材料是相比于金属材料更理想的沟道材料.另外,通过合理选择沟道尺寸,能进一步降低器件开关时间和功耗.上述结论为全自旋逻辑器件的优化设计与应用提供了理论参考.     

Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.