α-In2S3 and β-In2S3 phases produced by SILAR technique

In₂S₃ films have been deposited by the successive ionic adsorption and reaction technique (SILAR) at room temperature. The films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra have revealed the presence of both the α-In₂S₃ (cubic) and β-In₂S₃ (tetragonal) phases. The presence of the α-In₂S₃ phase at room temperature is attributed to the richness of In in the deposited materials. The presence of both phases is also supported by FESEM observations. The crystallinity of the material has been observed to improve with increasing thickness. Direct band gap of the deposits decreased from 2.89 to 2.37?eV with increasing thickness.     

Role of columnar grain size in magnetization of La0.8MnO3 thin films grown by pulsed laser deposition

La_0.8MnO₃ thin films have been deposited on (100) SrTiO₃ substrates at different substrate temperatures by a pulsed laser deposition method. Electronic transport measurements show that a higher substrate temperature results in lower resistivity and higher insulator–metal transition temperature. Transmission electron microscope studies reveal that all the films exhibit a feature of columnar structure with the grain size decreasing with substrate temperature. We argue that the columnar grain size strongly affects the ferromagnetic transition temperature and, in turn, dominates the resistivity behavior. Based on this point, other effects, such as of annealing and film thickness, on the electronic properties are also discussed. PACS 68.55.Jk; 71.30.+h; 75.70.Ak; 75.70.Pa     

The effects of thermal annealing on the obliquely deposited Ag-Ge-S thin films

Obliquely deposited thin films of ternary Ag-Ge-S glasses are characterized in this work. Thin films are fabricated in a vacuum thermal evaporator at different evaporation angles and examined by Raman spectroscopy. The Raman mode frequency of GeS₄ corner-sharing (CS) structure of the as-deposited films display a red-shift as a function of Ag content due to reduced global connectivity, and therefore decreased network stress. Film thickness of normally deposited thin films is significantly less when compared against obliquely deposited ones. Sulfur-ring (S₈) modes are observed in thin films but not in corresponding bulk material. Thermal annealing of thin films results in the disappearance of Sulfur-ring (S₈) modes, while the temperature required for this phenomenon is deposition angle dependent. Thickness of the obliquely deposited films shrinks significantly after thermal annealing, which indicates a collapse of the micro-column structure introduced by oblique deposition.     

RF-PACVD of water repellent and protective HMDSO coatings on bell metal surfaces: Correlation between discharge parameters and film properties

Hexamethyldisiloxane (HMDSO) films have been deposited on bell metal using radiofrequency plasma assisted chemical vapor deposition (RF-PACVD) technique. The protective performances of the HMDSO films and their water repellency have been investigated as a function of DC self-bias voltage on the substrates during deposition. Plasma potential measurements during film deposition process are carried out by self-compensated emissive probe. Optical emission spectroscopy (OES) analyses of the plasma during deposition reveal no significant change in the plasma composition within the DC self-bias voltage range of −40 V to −160 V that is used. Raman and X-ray photoelectron spectroscopy (XPS) studies are carried out for film chemistry analysis and indicate that the impinging ion energy on the substrates influences the physio-chemical properties of the HMDSO films. At critical ion energy of 113 qV (corresponding to DC self-bias voltage of −100 V), the deposited HMDSO film exhibits least defective Si-O-Si chemical structure and highest inorganic character and this contributes to its best corrosion resistance behavior. The hardness and elastic modulus of the films are found to be bias dependent and are 1.27 GPa and 5.36 GPa for films deposited at −100 V. The critical load for delamination is also bias dependent and is 11 mN for this film. The water repellency of the HMDSO films is observed to be dependent on the variation in surface roughness. The results of the investigations suggest that HMDSO films deposited by RF-PACVD can be used as protective coatings on bell metal surfaces.     

Nanostructure of laser-deposited palladium thin films on different substrates

The morphological features of palladium thin films deposited on different substrates are described. Film deposition has been performed by means of the pulsed laser evaporation method. It is shown that the grain structure of palladium films is formed independently of the substrate roughness. Particular emphasis is placed on the correlation between gas-sensitive metal-insulator-semiconductor (MIS) sensor properties and the nanostructure of palladium films used as metal electrodes in these sensors. It is concluded that a change in the morphology of palladium films has no direct influence on the degradation of the hydrogen sulphide sensitivity of MIS sensors that arises after sensor annealing in air enriched with hydrogen.     

Cu膜的光学特性尺寸效应及最小连续膜厚研究

采用离子束溅射在K9玻璃基底上沉积了不同厚度的Cu膜,利用Lambda-900分光光度计,测量了波长为310 nm到1300 nm范围内Cu膜的反射率和透射率.选定波长为310、350、400、430、550、632、800、1200 nm时对薄膜的反射率、透射率和吸收率随膜厚变化的关系进行研究.同时,对Cu膜的光学常量也进行了讨论.结果显示,Cu膜的光学特性都有明显的尺寸效应.将波长为550 nm时的反射率和透射率随Cu膜厚度变化关系的交点对应厚度作为特征厚度, 该厚度可认为是金属Cu膜生长从不连续膜进入连续膜的最小连续膜厚.根据这一特征判据,离子束溅射沉积Cu膜样品的最小连续膜厚为33 nm.利用原子力显微镜观测了膜厚在特征厚度附近时Cu膜的表面形貌.     

The structure and optical properties of evaporated Samarium fluoride films

Samarium fluoride (SmF₃) films have been deposited on quartz, silicon and germanium substrates by vacuum evaporation method. The crystal structure of the films deposited on silicon substrate is examined by X-ray diffraction (XRD). The films deposited at 100 °C, 150 °C and 250 °C have the (1 1 1) preferred growth orientation, but the film deposited at 200 °C has (3 6 0) growth orientation. The surface morphology evolution of the films with different thickness is investigated with optical microscopy. It is shown that the microcrack density and orientation of thin film is different from that of thick film. The transmission spectrum of SmF₃ films is measured from 200 nm to 20 μm. It is found that this material has good transparency from deep violet to far infrared. The optical constants of SmF₃ films from 200 nm to 12 μm are calculated by fitting the transmission spectrum of the films using Lorentz oscillator model.     

The influence of dielectric films on the superconductivity of thin Sn and Tl films

The change in transition temperature for thin Sn and Tl films has been measured after deposition of dielectric substances. The change in transition temperature is inversely proportional to the thickness of the superconducting film and relatively independent of the thickness of the dielectric film. When SnS or Tl₂Se is deposited on Sn films, the transition temperature is depressed. When TICl or Tl₂Se is deposited on Tl films, the transition temperature is increased. When S is deposited on Tl films, there is no initial change inT _c ; however,T _c is appreciably increased after annealing. A possible explanation for this effect is the reduction of the free electron concentration in the metal through the formation of the contact potential between the dielectric and the metal.     

Densification and nanocrystallisation of sol-gel ZrO 2 thin films studied by surface plasmon polariton-assisted Raman spectroscopy

Very thin ZrO ₂ films (few nanometers) have been prepared by sol-gel process. These films were deposited onto a stack of a thin silver layer evaporated on a glass substrate for Surface Plasmons Resonance (SPR) experiments. The first aim of this work is to study the high densification of the sol-gel films followed by the refractive index and thickness accurate measurements at each step of the annealing procedure, using an optical set-up based on SPR. Secondly, SPR excitation coupled with micro-Raman experiment has also been performed to determine the thin films structure depending on layer thickness. Finally, Conventional Transmission Electron Microscopy (CTEM) and High Resolution (HRTEM) studies have been conducted to check and complete Raman spectroscopy results. A discussion compares the optical results and the Transmission Electron Microscopy observations and shows that ultra thin layers structure is strongly depends on films thickness. Received 14 May 2001 and Received in final form 2 January 2002     

Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering

The initial stages of the growth of barium strontium titanate (BaSrTiO₃) ferroelectric films deposited on single-crystal sapphire substrates have been studied using medium-energy ion scattering. It has been found that, depending on the variation in the deposition temperature, the mechanisms of formation of the ferroelectric film change as a result of the change in the mechanism of mass transfer of the deposited atoms. It has been shown that the minimum thickness of the continuous ferroelectric film on sapphire is of the order of 6 nm.     

Improvement of corrosion resistance of carbon steel using chemical vapor deposition from Cr(CO)6 with an ArF excimer laser

Corrosion resistance of carbon steel coated with thin film deposited from Cr(CO)₆ using an ArF excimer laser (193 nm) has been evaluated by an electrochemical method as a function of laser beam intensity. The carbon steel coated with the film formed at higher beam intensity shows higher corrosion resistance. Microstructure, composition, and thickness of the films have also been investigated. SEM micrographs show that the films consist of small grains which decrease in size with increasing beam intensity. Auger electron spectroscopy (AES) combined with Ar⁺ beam sputtering reveals that the films deposited at higher beam intensity give higher chromium content, and that the thickness at a fixed total irradiation energy increases up to the intensity of 10 MW cm^–2, falling above this intensity. In addition, the change of film thickness by addition of buffer gases (Ar, CO, and H₂O) has been investigated. The thickness is 10 times smaller under the addition of H₂O, and twice smaller under the addition of Ar or CO than without the addition of gases. A deposition mechanism based on photolysis of Cr(CO)₆ in the gas phase is proposed related to the experimental data after the discussion of several possible mechanisms.     

Correlation of process parameters and properties of TiO<Subscript>2</Subscript> films grown by ion beam sputter deposition from a ceramic target

The correlation between process parameters and properties of TiO₂ films grown by ion beam sputter deposition from a ceramic target was investigated. TiO₂ films were grown under systematic variation of ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, polar emission angle) and characterized with respect to film thickness, growth rate, structural properties, surface topography, composition, optical properties, and mass density. Systematic variations of film properties with the scattering geometry, namely the scattering angle, have been revealed. There are also considerable differences in film properties when changing the process gas from Ar to Xe. Similar systematics were reported for TiO₂ films grown by reactive ion beam sputter deposition from a metal target [C. Bundesmann et al., Appl. Surf. Sci. 421, 331 (2017)]. However, there are some deviations from the previously reported data, for instance, in growth rate, mass density and optical properties.     

Influence of Si substrate preparation on surface chemistry and morphology of L-CVD SnO2 thin films studied by XPS and AFM

Results of experimental studies of the influence of substrate preparation on the surface chemistry and surface morphology of the laser-assisted chemical vapour deposition (L-CVD) SnO₂ thin films are presented in this paper. The native Si(1 0 0) substrate cleaned by UHV thermal annealing (TA) as well as thermally oxidized Si(1 0 0) substrate cleaned by ion bombardment (IBA) have been used as the substrates. X-ray photoemission spectroscopy (XPS) has been used for the control of surface chemistry of the substrates as well as of deposited films. Atomic force microscopy (AFM) has been used to control the surface morphology of the L-CVD SnO₂ thin films deposited on differently prepared substrates. Our XPS shows that the L-CVD SnO₂ thin films deposited on thermally oxidized Si(1 0 0) substrate after cleaning with ion bombardment exhibit the same stoichiometry, i.e. ratio [O]/[Sn] = 1.30 as that of the layers deposited on Si(1 0 0) substrate previously cleaned by UHV prolonged heating. AFM shows that L-CVD SnO₂ thin films deposited on thermally oxidized Si(1 0 0) substrate after cleaning with ion bombardment exhibit evidently increasing rough surface topography with respect to roughness, grain size range and maximum grain height as the L-CVD SnO₂ thin films deposited on atomically clean Si substrate at the same surface chemistry (nonstoichiometry) reflect the higher substrate roughness after cleaning with ion bombardment.     

Far ultraviolet optical properties of MgF2 films deposited by ion-beam sputtering and their application as protective coatings for Al

Thin films of MgF₂ deposited by evaporation is a material widely used for its transparency in the far ultraviolet (FUV) down to ∼115 nm. In this paper the optical properties of ion-beam sputtered (IBS) MgF₂ in the FUV are investigated and compared with MgF₂ films deposited by evaporation. A slightly higher transparency at the 121.6-nm, H Lyman α line was obtained for IBS MgF₂ films compared to films deposited by evaporation, which makes IBS MgF₂ a promising protective material for Al reflective coatings. Experimental work on Al films that were protected with a thin evaporated MgF₂ film followed by an IBS MgF₂ film to produce a protective coating with optimum thickness showed a reflectance at 121.6 nm that was higher by about 3% compared to an Al film protected with an all-evaporated MgF₂ film.     

Nanocrystallite formation in Pd capped PrH3−δ films

Restricting the palladium cap layer thickness to ≤9 nm on top of 170 nm Pr films during in situ hydrogen loading has been shown to result in nanocrystallite size PrH_3−δ films even though the deposited Pr films are of large crystallite size. The effect is attributed to hydrogen-induced stresses in the PrH_3−δ films, which trigger structural rearrangement. These nanocrystalline films show a blue shift of the transmittance edge with respect to PrH_3−δ films of large crystallite size. The approximate size of the nanocrystallites calculated from the blue shift using an effective mass approximation (EMA) theory is supported by XRD, TEM and AFM measurements.     

Study on metal microparticle content of the material transferred with Absorbing Film Assisted Laser Induced Forward Transfer when using silver absorbing layer

Absorbing Film Assisted Laser Induced Forward Transfer (AFA-LIFT) is a modified LIFT method where a high absorption coefficient thin film coating of a transparent substrate is used to transform the laser energy into kinetic in order to transfer the “target” material spread on it. This method can be used for the transfer of biomaterials and living cells, which could be damaged by direct irradiation of the laser beam. In previous experiments, ∼50-100 nm thick metal films have been used as absorbing layer. The transferred material can also contain metal microparticles originating from the absorbing thin film and acting as non-desired impurities in some cases. The aim of our work was to study how the properties (number, size and covered area) of metal particles transferred during the AFA-LIFT process depend on film thickness and the applied fluence. Silver thin films with different thickness (50-400 nm) were used as absorbing layers and real experimental conditions were modeled by a 100 μm thick water layer. The particles transferred without the use of water layer were also studied. The threshold laser fluence for the complete removal of the absorber from the irradiated area was found to strongly increase with increasing film thickness. The deposited micrometer and submicrometer particles were observed with optical microscope and atomic force microscope. Their size ranged from 100 nm to 20 μm and depended on the laser fluence. The increase in fluence resulted in an increasing number of particles of smaller average size.     

离子束溅射沉积不同厚度铜膜的光学常数研究

利用Lambda-900分光光度计对离子束溅射沉积不同厚度Cu膜测定的反射率和透射率,运用哈德雷方程,并考虑基片后表面的影响,对离子束溅射沉积的Cu膜光学常数进行了计算。结果表明,在同一波长情况下,膜厚小于100 nm的纳米Cu膜光学常数随膜厚变化明显;膜厚大于100 nm后,Cu膜的光学常数趋于一定值。Cu膜不连续时的光学常数与连续膜时的光学常数随波长变化规律不同;不同厚度的连续膜的光学常数随波长变化规律相同,但大小随膜厚变化而变化。     

A. C. behaviour and dielectric relaxation in indium oxide films

Vacuum deposited blackish indium oxide films (In-O) as well as the oxidised films (In₂O₃) were studied for their a.c. behaviour at different temperatures and at various film thicknesses in the audio frequency region. ε of In-O films was thickness dependent and also showed dielectric relaxation at lower frequencies due to the dipolar orientation arising from their non-stoichiometric nature. However at liquid nitrogen temperature region ε was thickness independent similar to the oxidised films which neither showed any relaxation effect nor any thickness dependent ε. The results have been discussed from the classical theory of dielectric polarisation.     

Influence of the plasma parameters on the properties of aluminum oxide thin films deposited by laser ablation

The plasma produced by the ablation of a high purity Al₂O₃ target, using the fundamental line (1064 nm) of a Nd:YAG laser, was characterized. The laser fluence was varied in order to study its effect on the characteristics of the produced plasma as well as on the properties of the material deposited. Optical emission spectroscopy (OES) was used to determine the type of excited species present in the plasma. The mean kinetic energy of the ions and the maximum plasma density were determined from the time of flight (TOF) curves, obtained with a planar Langmuir probe. The obtained results reveal that the fast peak in the probe curve could be attributed to Al III, while the slow peak corresponds to the Al II. Aluminum oxide thin films were then deposited under the same conditions of the diagnosed plasma, in an attempt to correlate the plasma parameters with the properties of the deposited material. It was found that when Al II ion energies are lower than 461.0 eV the films deposited have structural characteristics similar to that of α-Al₂O₃, whereas at ion energies greater than 461.0 eV amorphous material was obtained.     

Thickness-dependent transport properties of Sr4Fe6O13 epitaxial thin films

High-quality epitaxial thin films of Sr₄Fe₆O₁₃ have been deposited on NdGaO₃(001) substrates by pulsed laser deposition. The transport properties have been characterized by impedance spectroscopy. The temperature dependence of conductivity suggests a mechanism of adiabatic hopping by small polarons, in agreement with previous results in bulk samples. The transport properties show a clear dependence on the film thickness with the thinner films (10 nm) presenting conductivity values in oxygen one order of magnitude higher than the thicker ones (313 nm). We correlate this behaviour with the thickness dependence of the epitaxial strain.