Excimer emission from evaporated pyrene films

Emission spectra and decay times of fluorescence of pyrene thin films prepared by evaporation onto glass substrate at low temperatures were measured. The band positions of the excimer emission from the films evaporated onto substrates at temperatures below about 200 K, are found to the lower energy side of those of the crystal. The decay time of excimer emission in a film prepared by evaporation onto a substrate cooled with liquid nitrogen is about 100 ns at 85 K and is shorter than that of the crystal. These results are discussed in relation to an amorphous structure in the pyrene evaporated thin films. The energy transfer was also studied in evaporated pyrene films containing perylene as a dopant. The results are explained in terms of excimer exciton diffusion through the crystalline structure in the film.     

Excimer emission of crystalline naphthalene

Excimer emission of naphthalene has been observed in microcrystals obtained by grinding single crystals mechanically and in evaporated films. The emission spectrum of the excimer in the microcrystal was equal to that in the evaporated film. The decay times of both excimer emissions were about 140 ns at 77 K. The temperature dependence of these decay times has been interpreted by the distribution of the excimers in thermal equilibrium between two vibrational states.     

An anomalous emission excited near the absorption edge of pyrene crystals

Emission spectra and decay times of the fluorescence excited at the absorption edge region in pyrene crystals were measured. At liquid nitrogen temperature, the fluorescence under the excitation at 390 nm is considered as the excimer emission and its band peak shifts a little to the short wavelength in comparison with that of the excimer emission under the excitation at 360 nm. The emission decay times under the excitation at the 390 nm and 360 nm are about 155 ns and 180 ns, respectively, at liquid nitrogen temperature. The former decay time changes its value abruptly near 127 K. This abrupt change of the decay time may be due to the phase transition in pyrene crystals.     

Immobilization of pyrene via diethylenetriamine on quartz plate surface for recognition of dicarboxylic acids

A novel photo-luminescence film has been prepared by immobilizing pyrene on a quartz plate surface via diethylenetriamine. Imino structure was intentionally introduced into the long flexible spacer due to their hydrogen bond forming abilities with carboxylic acids. It has been found that the film shows combined monomer and excimer emission of pyrene both in wet and dry states. Steady-state and time-resolved fluorescence emission measurements demonstrated that the excimer emission mainly came from direct excitation of ground state dimers, and/or monomers in aggregated state. The structures of the excimers formed during the excitation are mixtures of “standard excimers” and “distorted excimers” of the fluorophore moieties. Fluorescence lifetime measurements showed that the decay of the film is complex, and a four exponential fit is necessary for getting a satisfied result. The photophysical behavior of the present film could be rationalized by employing the model proposed before. Sensing property studies showed that the emission of the film is sensitive to the presence of dicarboxylic acids, including ethanedioic acid, malonic acid, etc. In contrast, presence of monocarboxylic acids, such as formic acid and acetic acid, had little effect upon the fluorescence emission of the film. Compared with the films taking ethylenediamine or 1,3-diaminopropane as their spacer component, introduction of diethylenetriamine into the spacer improved the performance of the film greatly. In addition, the sensing process is reversible, and the film is stable within a number of months provided it is properly preserved. These characteristics showed that the film is worthwhile for further exploration.     

Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH₃COO)₂], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (λ = 248, KrF) source with energy density of 50 mJ/cm² for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature.     

Deposition of aluminum nitride thin film on Si(1 1 1) by KrF excimer laser and its characterizations

We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and the study of the effects of substrate temperature and laser fluences. Deposition rate of AlN thin film at 0.3 Å/pulse has been achieved with laser fluence of 1500 mJ/cm² and at substrate temperature of 250 K, and this shows the enhancement of the deposition rate at low substrate temperature. Surface morphology of the deposited films is characterized by atomic force microscopy (AFM). In addition, the electrical performance of the MIS devices with AlN thin films prepared in this experiment has been characterized.     

Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films

We have investigated the photoluminescence (PL) dynamics of ZnO thin films under intense excitation conditions using an optical-Kerr-gating method. The PL bands originating from exciton-exciton scattering (P emission) and biexciton (M emission) have been observed at 10 K. The ultrashort gating time of 0.6 ps has enabled us to obtain precise information of the temporal profiles of the peak energies and the intensities of the P- and M-PL bands. We have found that the decay time of the P emission becomes longer with increasing film thickness, while that of the M emission is independent of the film thickness. Although the decay time of the P emission is an increasing function of the film thickness, the relation is not in proportion, which is contrary to the predicted proportionality based on a simple model of photon-like polariton propagation.     

Insulating properties of ultrathin KF layers on Cu(1 0 0): Resonant Auger spectroscopy

Solid-state effects in the creation and decay of K 2p core excitations in thin KF films on Cu(1 0 0) surface have been studied in resonant Auger spectra, excited using synchrotron radiation. The spectra of films of various thickness starting from a single monolayer were measured.The photoabsorption spectra reveal crystal field splitting already at film thickness of about 1 monolayer. The Auger decay spectra of the K 2p⁻¹3d core excitations in films of thickness up to 2 monolayers exhibit a band characteristic of the decay of core ionised states, showing that the excited electron delocalises into substrate before the core hole decays. In thicker films the coexistence of the decay of excited states in the bulk of the KF crystalline film and of ionised states at the KF-metal interface is observed, indicating that the charge transfer probability from the upper layers of the film into the metallic substrate is strongly reduced.     

Enhanced Exciplex Emission of Pyrene Thin Films Doped by Perylene: Structural,Photophysical and Morphological Investigation

The present work reports on the preparation of thin films of pyrene luminophors doped by varying amounts of perylene by spin coating technique. The structural, morphological, and photophysical properties of pyrene thin films have been investigated as a function of perylene contents. X-ray diffraction studies of doped thin films show well-defined peaks, and estimated crystallite size decreases with increasing perylene content, due to the formation of closed packed crystal structure. SEM images of pure pyrene revealed smooth, and compact and separated crystals with amounts of perylene. The result of absorption spectra showed decrease in intensity with perylene content. However, the fluorescence spectra of pyrene containing higher amounts of perylene showed broad and structureless exciplex emission at 510 nm. The emission colour of pyrene luminophors tuned from blue to green by controlling the concentration of perylene. The phenomenon of change in colour was seen due to efficient excitation energy transfer from pyrene to perylene in thin films. It also found that the intensity of exciplex emission increases with increasing concentration of perylene is of high demand in fluorescent lamp as well as green organic light emitting diodes.     

钽掺杂二氧化钛薄膜的光电性能研究

采用脉冲激光沉积法 (PLD), 以石英玻璃为衬底制备了钽掺杂TiO₂薄膜并研究了薄膜样品的光电性质. 沉积氧气分气压从0.3 Pa变化到0.7 Pa时薄膜样品的帯隙变化范围是3.26 eV到3.49 eV. 通过测量电阻率随温度的变化关系确定了薄膜内部的主要导电机理. 在150 K到210 K温度范围内, 热激发导电机理是主要的导电机理; 而在10 K到150 K范围内; 电导率随温度的变化复合Mott的多级变程跳跃模型 (VRH); 在210 K到300 K范围内, 电阻率和exp(b/T)^1/2呈正比关系. 关键词： 2')" href="#">Ta掺杂TiO₂ 脉冲激光沉积法 薄膜 导电机理     

Spectral migration and decay characteristics of triplet excitations in glassy benzophenone

Spectral and kinetic properties of triplet excitons in thin films of glassy benzophenone were studied at temperatures between 4.2 and 220 K. The influence of the film thickness on the lifetime and nature of their phosphorescence decay was observed and discussed. It was shown that studies of spectral diffusion in thin glassy films of benzophenone must take into account the dependence of the emission lifetime on the recording wavelength and the influence of the excitation intensity on the phosphorescence decay process, among other factors. The hypothesis is put forward that the characteristics of the temperature transformations of the spectra (displacements, changes in band half-widths) are related to phase transitions and relaxation processes in the glassy benzophenone. Fiz. Tverd. Tela (St. Petersburg) 40, 1052–1055 (June 1998)     

Thermal transport in melting and recrystallization of amorphous and polycrystalline Si thin films

The liquid-solid interface motion and temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (~1 ns) electrical conductance, optical reflectance/transmittance at visible and near-IR wavelengths and thermal emission measurements. For laser energy densities causing partial melting, the maximum temperature remains close to the melting point of amorphous silicon (a-Si). When complete melting occurs, substantial supercooling is observed, followed by spontaneous nucleation. These phase transformations are consistent with the recrystallized poly-Si morphologies. It is also found that the melting of poly-Si occurs close to the melting point of crystalline silicon. This temperature is higher than the melting point of a-Si by about 100-150 K.     

Observation of persistent photoconductivity at room temperature in ferrocene-doped poly(methyl methacrylate) thin films containing chloroform molecules

Persistent photoconductivity has been observed at room temperature (300 K) in solution cast ferrocene-doped poly(methyl methacrylate) thin films, prepared from chloroform and the mixture of solvents chloroform and benzene. The maximum photoinduced current, the buildup time and decay time of persistent photocurrent increases with the increasing amount of chloroform present in the film as well as the duration of photoexcitation. The buildup and decay kinetics have been studied. Our results indicate that the photooxidation of ferrocene in the presence of chloroform in the film leads to a photocurrent persistent for a longer period at room temperature.     

Besetzungsdichten angeregter Wasserstoffniveaus in stationären Plasmen unter Berücksichtigung der Diffusion von Neutralteilchen

A cryostat is described which allows to produce two films simultaneously by quenching condensation. Each film can be warmed up to any temperature between 20 and 300 °K within one minute. The resistance of Cu- and In-films is measured during annealing as a function of time and temperature. The kinetics are discussed and the activation energies are derived. The values for Cu are compared with those obtained from the recovery of irradiated copper.     

ZnO薄膜近带边紫外发光的研究

用ZnO陶瓷靶,采用脉冲激光沉积(PLD)技术在c-Al₂O₃衬底上制备了ZnO薄膜。通过不同温度下光致发光(PL)光谱的测量,对样品的紫外发光机理进行研究。 在较低温度(10 K)下的PL光谱中,观测到一个位于3.354 eV处的束缚激子(D⁰X)发射,随着温度的升高(~50 K),在D⁰X的高能侧观测到了自由激子的发射峰。在10 K温度下,3.309 eV处出现了一个较强的发光带A,此发光带强度随着温度升高先增大然后减小,并且一直延续到室温。重点讨论了此发光带的起源,并认为A带可归属于自由电子-受主之间的复合发射。     

纳米ZnO薄膜的激子光致发光特性

报道了纳米ZnO薄膜激子光致发光(PL)与温度的关系。首先利用低压金属有机化学气相沉积(LPMOCVD)技术生长ZnS薄膜,然后将ZnS薄膜在氧气中于800℃下热氧化2h获得纳米ZnO薄膜。X射线衍射(XRD)结果表明,纳米ZnO薄膜具有六角纤锌矿多晶结构且具有择优(002)取向。室温下观察到一束强的紫外(326eV)光致发光(PL)和很弱的深能级(DL)发射。根据激子峰的半高宽(FWHM)与温度的关系,确定了激子纵向光学声子(LO)的耦合强度(ГLO)。     

Synthesis and characterization of ZnO nano/microfibers thin films by catalyst free solution route

Zinc oxide (ZnO) nano/microfibrous thin films were successfully synthesized by a catalyst free solution route on glass and Si substrates. X-ray diffraction study revealed the formation of ZnO nanofibers of hexagonal crystalline structure. The texture coefficient of different planes varied with annealing temperature and that of the (0 0 2) plane was the highest for films annealed at temperature 873 K. Scanning electron micrograph showed the well formation of ZnO nano/microfibers with an average diameter 500 nm and having an average aspect ratio 150. UV–Vis–NIR spectroscopic study for the films deposited on glass substrates showed the high transmittance in the visible and near-infrared region. It was also observed that the band gap energy decreased as the films were annealed at higher temperature. The band gap energies of nanostructured ZnO thin films were determined to be in the range 3.03–3.61 eV. The photoluminescence study showed an UV emission peak at 397 nm, a visible blue–green emission peak at 468 nm and a green emission peak at 495 nm. Field emission properties of nanofiber ZnO thin film showed considerably low turn-on field around 1.4 V/μm. The emission current was as high as 70 μA at the field of 3.6 V/μm.     

High frequency impedance spectroscopy study on Gd-doped CeO<Subscript>2</Subscript> thin films

The gadolinia-doped ceria (GDC) thin films were deposited by pulsed laser deposition. Samples with special geometry were prepared which allowed us to characterize GDC film in across-plane direction. The electrical properties of the films were investigated by means of impedance spectroscopy in the frequency range of 10 Hz to 10 GHz and 380–600 K temperature interval. The data analysis was performed by using appropriate equivalent circuit. The equivalent circuit modeled thin GDC film itself, platinum metal connections (traces) in the dielectric medium of sapphire substrate and interfaces between the film and platinum electrodes. Hence, several factors influenced the impedance spectra, namely the properties of substrate, the oxygen-ion transport in the film, ion blocking at the interface between the film and the electrode, and metal traces. The electrical properties of GDC thin films were compared with these of bulk ceramics and showed similar conductivity and dielectric permittivity values. The study also revealed that measurement data at electrical field frequencies of up to 10 GHz were particularly important to correctly estimate electrical properties of GDC thin films, because at high temperatures the electric response of GDC film shifts to high frequencies (higher than 1 MHz at 600 K). The thin film sample preparation for high frequency measurements and fitting of impedance data by using relatively simple equivalent circuit model is presented.     

Effect of excimer laser annealing on the silicon nanocrystals embedded in silicon-rich silicon nitride film

The investigations of silicon-rich silicon nitride film grown by plasma-enhanced chemical vapor deposition and then annealed by excimer laser have been carried out systematically. The surface roughness and the crystallization of the films have significantly been improved after the excimer laser annealing. The samples demonstrate visible photoluminescence emission under optical excitation at room temperature. It is found that the emission peak energy as well as emission intensity changes with laser annealing conditions, and the relevant mechanism is discussed in detail. Our investigation exhibits the size controllability of silicon nanocrystals embedded in the silicon nitride film, which implies promising applications in optoelectronic devices such as light-emitting diodes and solar cells.     

High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.