真空沟道结构GaAs光电阴极电子发射特性

光电阴极的发射电流密度和寿命限制了其在功率器件和大科学装置中的应用.本文结合光电阴极和场发射阴极电子发射理论,设计了大电流密度的真空沟道结构光电阴极组件,并使用覆膜和刻蚀技术制备了以GaAs衬底为阴极材料的光电阴极组件.光电阴极组件电子发射特性测试结果显示,常温状态下随入射光功率增加,阴极发射电流增加幅度逐步增大.光功率为5 W时,发射电流达到26.12 mA,电流密度达到5.33 A/cm~2.随光电阴极组件工作温度增加,阴极材料内的载流子浓度也会相应地增加,提高了负极对阴极材料内发射电子的补充效率,增强了阴极组件的电子发射能力.当光电阴极组件为400℃时,其发射电流可达到89.69 mA.由于阴极表面不存在激活原子,在光电阴极组件连续144 h的寿命试验中,阴极的发射电流为4.5±0.3 mA,阴极发射性能并未出现明显衰减.真空沟道是光电阴极组件电子发射的主要区域,通过改善真空沟道结构参数可以直接调整阴极组件发射电子束的形状,增强大电流密度光电阴极在真空电子器件和设备中的适用性.     

基于场致发射阴极阵列的太赫兹源的物理机理研究

本文对一种基于场致发射阴极阵列(FEA)的太赫兹辐射源的物理机理进行了理论分析和粒子模拟验证. 采用场匹配法分析了器件的高频场结构, 确定π模作为器件的最优工作模式; 利用线性理论分 析了器件的注波互作用过程, 揭示了高频场对FEA阴极发射电流的预调制作用以及电子在阴阳极间隙的渡越时间效应 是器件起振的物理原因; 分析得出了π模起振条件; 粒子模拟结果与理论分析具有较好的一致性.     

丝网印刷制备碳纳米管阴极的强流脉冲发射特性研究

采用丝网印刷法制备了一种大面积的碳纳米管阴极,表征了阴极表面碳纳米管的形貌及分布.研究了该阴极在不同脉冲条件下的高压脉冲发射特性,分析了发射时阴极面等离子体产生和发射点的分布.研究表明：碳纳米管阴极的脉冲发射机制为爆炸电子发射,在平均场强为16.7V/μm的单脉冲电场下,阴极的最高发射电流密度为99 A/cm².在平均场强为15.4 V/μm的双脉冲电场下,阴极的最高发射电流密度为267 A/cm².碳纳米管阴极可以作为强流电子束源在高能微波器件中得到应用. 关键词： 强流脉冲电子束 碳纳米管 阴极 丝网印刷     

慢波结构爆炸发射对高功率太赫兹表面波振荡器的影响

随着真空电子学器件的工作频率达到太赫兹波段, 表面波振荡器的横截面尺寸变小, 慢波结构的加工精度难以得到保证, 同时由于表面波振荡器的电磁场集中在慢波结构表面, 在高电压工作情况下, 太赫兹波段的表面波振荡器慢波结构爆炸发射电子会影响器件的工作特性. 本文分析了高电压工作情况下0.14 THz表面波振荡器慢波结构中电场的分布特性, 研究表明, 在慢波结构区域沿着轴线方向上存在电场幅度的包络分布, 在慢波结构中心位置处靠近慢波结构内半径处电场的幅度最大, 最易爆炸发射产生电子, 采用粒子模拟软件UNIPIC模拟了慢波结构处爆炸发射的电子对器件工作特性的影响, 同时考虑了电子回流所产生的二次电子倍增效应, 数值模拟结果表明, 慢波结构电子产生会导致器件的输出功率下降, 从数十兆瓦下降到兆瓦量级.     

超大长宽比U型开口谐振器的太赫兹调控特性

近年来,金属亚波长结构由于在负折射材料方面存在巨大应用价值,及可作为太赫兹波段的光学限制器等器件应用,引起了研究者们的广泛关注。本文采用电子束曝光离子束刻蚀的方法在金膜上制备了亚波长的超大长宽比U型开口矩形谐振器阵列结构,利用时域有限差分方法(FDTD)和太赫兹时域光谱技术(THz-TDS)对U型阵列结构的太赫兹波透射光谱响应进行了测量和分析,讨论了透过率对结构几何参数的依赖特性和异常透射的物理机制。通过这种U型开口谐振器能够实现太赫兹波的强局域和场增强,可将太赫兹波局域在波长千分之一的尺寸上,从而实现了太赫兹的异常透射现象,这种超大长宽比的U型开口谐振器可在太赫兹探测、太赫兹成像及其他光学器件的设计上得以应用。     

220 GHz均匀永磁聚焦行波管电子光学系统的设计与实验研究

电子光学系统是行波管的核心部件之一,在太赫兹频段,电子束通道很小,导致高电流密度电子束的传输非常困难。基于220 GHz折叠波导行波管慢波结构设计所需束流参数,根据理论分析和电磁仿真软件,设计了一款采用均匀永磁聚焦对电子束进行约束的电子光学系统。仿真结果显示,当电子束通道直径0.3 mm、长度31 mm时,在阴阳极压差20 kV的条件下阴极发射电流141 mA,电子流通率100%。根据设计结果封接了流通管,实验结果显示,当阴阳极压差20 kV时,阴极发射电流138.5 mA,收集极电流125.5 mA,电子流通率91%。     

颗粒膜厚度对表面传导电子发射的影响

制备了不同厚度下的C-Ti颗粒膜用作表面传导电子发射的阴极发射薄膜,研究了不同颗粒膜厚度对电子发射特性的影响。将所制备阴极器件加载不同电压幅值下的等幅三角波,对器件进行电形成,结果表明:颗粒膜厚度为69 nm的器件开启电压为32 V,在33 V时具有最大发射效率;颗粒膜厚度为855 nm的器件开启电压为15 V, 在23 V时发射效率最高;颗粒膜厚度为69 nm的器件所形成的电压范围和电子发射效率都明显高于颗粒膜厚度为855 nm的器件。     

0.8 THz再生反馈振荡器的仿真模拟研究

随着太赫兹技术的发展,高频率、大功率的太赫兹辐射源一直是国内外研究的热点。再生反馈振荡器作为一种新型太赫兹源器件,具有可行性高、功率大的优点。基于0.8 THz太赫兹波成像系统的需求,采用折叠波导慢波结构,对再生反馈振荡器进行设计与研究。首先对0.8 THz折叠波导慢波结构进行设计并使用CST微波工作室中的本征模求解器进行参数优化,再通过CST粒子工作室中的PIC仿真模块对整管进行热特性仿真,验证了方案的可行性,仿真结果显示,最终可产生60 mW的稳定输出信号。     

二维电子气等离激元太赫兹波器件

固态等离激元太赫兹波器件正成为微波毫米波电子器件技术和半导体激光器技术向太赫兹波段发展和融合的重要方向之一。本综述介绍AlGaN/GaN异质结高浓度和高迁移率二维电子气中的等离激元调控、激发及其在太赫兹波探测器、调制器和光源中应用的近期研究进展。通过光栅和太赫兹天线实现自由空间太赫兹波与二维电子气等离激元的耦合,通过太赫兹法布里-珀罗谐振腔进一步调制太赫兹波模式,增强太赫兹波与等离激元的耦合强度。在光栅-谐振腔耦合的二维电子气中验证了场效应栅控的等离激元色散关系,实现了等离激元模式与太赫兹波腔模强耦合产生的等离极化激元模式,演示了太赫兹波的调制和发射。在太赫兹天线耦合二维电子气中实现了等离激元共振与非共振的太赫兹波探测,建立了太赫兹场效应混频探测的物理模型,指导了室温高灵敏度自混频探测器的设计与优化。研究表明,基于非共振等离激元激发可发展形成室温高速高灵敏度的太赫兹探测器及其焦平面阵列技术。然而,固态等离激元的高损耗特性仍是制约基于等离激元共振的高效太赫兹光源和调制器的主要瓶颈。未来的研究重点将围绕高品质因子等离激元谐振腔的构筑,包括固态等离激元物理、等离激元谐振腔边界的调控、新型室温高迁移率二维电子材料的运用和高品质太赫兹谐振腔与等离激元器件的集成等。     

向外发射同轴型虚阴极振荡器研究

在高功率微波源研究领域提出了一种新型虚阴极器件——向外发射同轴型虚阴极振荡器.对其相关束流特性进行了理论分析,得到了同轴空间径向传输空间电荷限制电流,以及虚阴极产生的条件和电子束运动的基本规律.基于数值模拟得到的结果,向外发射同轴型虚阴极振荡器不仅表现出较高的能量转换效率,而且有利于增加虚阴极器件产生高功率微波的脉宽,同时还可以应用于低频段高功率微波源.这种虚阴极器件的可能输出微波方式也进行了讨论 关键词： 虚阴极 高功率微波 脉冲功率 电子束二极管     

Measurements of vacuum field emission from bio-molecular andsemiconductor-metal eutectic composite microstructures

Designs, calculations, and initial data are presented from a program investigating the use of biomolecular and eutectic composite microstructures as vacuum field-emission cathodes. Calculations, supported by the initial data, indicate that these electron sources should be capable of macroscopic beam current densities, J⩾100 A/cm², without the formation of a surface plasma. The absence of a plasma allows these cathodes to operate as a long-pulse to DC electron sources. The designs avoid the formation of surface plasma by forcing the current emitted from the tips to transit a thin layer of silicon. The natural high-field current-limiting nature of the silicon serves to prevent the ablation of tip structures and the subsequent formation of cathode plasma. Initial data obtained with these microstructures has demonstrated Fowler-Nordheim characteristic emission. Coated bio-molecular composite cathodes have demonstrated stable DC current densities of ~100 mA/cm², and the eutectic composite cathodes have demonstrated similarly stable DC current densities of ~1 A/cm²     

Study of field-induced explosive electron emission mechanisms ofpseudospark superemission cathodes

Various mechanisms of electron emission, including the field, field-enhanced thermionic, and explosive electron emissions from pseudospark cathodes, are discussed and compared. The mechanism of the field-induced explosive electron emission due to microstructure on the cathode surface is considered to be more likely the pseudospark superemissive mechanism. A high-mean electric field up to 3-5 MV/cm on the cathode surface in the end of hollow cathode phase is enough to initiate the mechanism. The cathode spot initiation delay time (<10 ns) and explosive emission threshold current (~10⁸ A/cm² ) prior to the high current conducting phase are given by solving the initial value problem of the one-dimensional heat conduction equation, thus explaining the existing experimental data of the pseudospark cathode superemission. In the case of multigap discharge, the above mechanism occurs on nearly all cathode and interelectrode surfaces. Experimental evidence in single- and multigap pseudospark discharges supports the suggested explanation     

Experimental studies of long-lifetime cold cathodes for high-powermicrowave oscillators

Operation of explosive-emission cold cathodes made from various materials was studied at a large number of pulses at current densities of ~1.0⁴ A/cm². The cathode voltage and the beam current were ~500 kV and 5 kA, respectively, with a pulsewidth of ~20 ns. At a small number of pulses (⩽10³), cathodes of like geometry (even made from different materials) demonstrated similar emission properties. For most of the materials tested, with a large number of pulses (⩾10³), the current risetime increased to the fullwidth of the voltage pulse and the maximum current of the vacuum diode decreased. When using a graphite cathode, the maximum current remained invariant until 10⁸ pulses. Mass losses were measured for a series of cathode materials. The results obtained offered the possibility to realize long-lived operation of an X-band relativistic backward-wave oscillator with an almost invariant output power of 350-400 MW during 10⁸ pulses at a pulse repetition rate of 100-150 p.p.s     

强流碳纳米管阴极快脉冲重频发射特性

在Cu基底上, 采用催化热解生长法制备了石墨化程度较高的碳纳米管阴极. 当电子束能量达到1 MeV、梯度约为60 kV/ns时, 发射束流强度达到15 kA, 相应密度约为1 kA/cm², 束压、束流响应快, 波形间几无延时. 以50 Hz重复频率、约15 GW束功率强流发射时, 波形稳定, 随着频率增高, 稳定性降低. 发射炮次达1000后, 表面形貌保持完整、界面无脱附; 束压与束流基本满足空间电荷限制定律, 发射机理属闪络型等离子体发射, 等离子体速度约为3.9 cm/μs.     

高性能强流脉冲电子束源关键技术研究

强流脉冲电子束源是高功率微波系统的核心部件之一，针对未来应用需求，亟需从绝缘、束流输运和热管理等多个方面提升强流束源技术性能。介绍了国防科技大学在高功率微波源用强流真空电子束源方面的研究进展。针对高功率微波管保真空需求，基于陶瓷金属钎焊，设计并研制了一种强场陶瓷真空界面，耐压大于600 kV、平均绝缘场强达到44 kV/cm、耐受脉宽大于80 ns，重复频率运行稳定；研制了一种基于SiC纳米线的强流电子束源冷阴极，在90 kV/cm的场条件下获得了1.17 kA/cm2的束流密度，相比传统天鹅绒阴极，SiC纳米线阴极的宏观电稳定性、发射均匀性及运行寿命均得到显著提高；针对相对论返波管，研制基于螺旋水槽型的强流电子束收集极，克服了高比能和低流速的矛盾，耐受热流密度达到1012 W/m2，能够满足系统长脉冲、高重复频率运行要求。     

Self-sustained self-sputtering: a possible mechanism for thesuperdense glow phase of a pseudospark

Self-sustained self-sputtering occurring during high current pseudospark operation (≈10⁴ A/cm², I>10³ A) is shown to be a possible mechanism for the superdense glow. The mean-free-path for ionization of cathode material sputtered in the low-current hollow-cathode phase can be shorter than the cathode-anode gap distance, and ionized atoms can return to the cathode surface, self-sputtering with a yield greater than one. The self-sputtered cathode atoms become ionized in the beam of electrons accelerated in the cathode sheath. A large fraction of the discharge current at the cathode surface can be carried uniformly over the surface by ions and a very high electron emission density is not required to maintain the high current     

单晶CeB_6发射性能及磁电阻各向异性研究

采用X射线劳厄定向法对单晶CeB_6的(110),(111),(210)和(310)晶面进行了定向.系统研究了不同晶面热发射性能及磁场对电阻率的影响规律.结果表明,当阴极温度为1873 K时(110),(111),(210)和(310)晶面最大发射电流密度分别为38.4,11.54,50.4和20.8 A/cm~2,表现出了发射性能的"各向异性".RichardsonDushman公式计算逸出功结果表明,上述晶面中(210)晶面具有最低的逸出功,为2.4 eV.从实际应用来看,该晶面有望替代商业化的钨灯丝成为新一代的场发射阴极材料.磁电阻率测量结果显示,当晶体从[001]方向旋转至[011]方向时电阻率从73μ?·cm变化至69μ?·cm,表明电阻率在磁场中沿不同方向同样具有"各向异性"的特点.     

High current density results from a LaB6 thermioniccathode electron gun

A Pierce-type electron gun using a planar 1.9-cm-diameter lanthanum hexaboride cathode is being studied as a robust thermionic emitter at high cathode-current densities. The gun has been operated up to voltages of 115 kV, achieving beam current densities of 30 A/cm² . The electron gun operated dependably up to 90 kV, achieving temperature-limited currents of 50 A. Due to the high fields at the tip of the Pierce-focusing electrode, the gun would usually arc at voltages >90 kV. Ten shots were obtained at a gun voltage of 115 kV, achieving transmitted currents up to 89 A, transmitted beam power up to 10.2 MW, and transmitted power densities up to 3.4 MW/cm²     

Electron beam extraction from a broad-beam vacuum-arc metal plasmasource

We describe experiments demonstrating the formation of a high current electron beam from a vacuum arc plasma. A preexisting vacuum arc ion source was used, with the extraction voltage reversed in polarity so as to form an electron beam rather than an ion beam; no other changes were required. The beam formed was of energy up to 33 keV, beam current up to 70 A, beam diameter about 10 cm, pulse width 500 μs, and energy density up to 25 J/cm². This kind of source can be used for material surface modification     

Multi-pulsed intense electron beam emission from velvet,carbon fibers,carbon nano-tubes and dispenser cathodes

The experimental results of studies of four kinds of cathode emitting intense electron beams are demonstrated under multi-pulsed mode based on an experimental setup including two multi-pulse high voltage sources.The tested cathodes include velvet,carbon fibers,carbon nano-tubes(CNTs)and dispenser cathodes.The results indicate that all four are able to emit multi-pulsed beams.For velvet,carbon fiber and CNTs,the electron induced cathode plasma emission may be the main process and this means that there are differences in beam parameters from pulse to pulse.For dispenser cathodes tested in the experiment,although there is a little difference from pulse to pulse for some reason,thermal-electric field emission may be the main process.