Effect of Fe doping on the structural and gas sensing properties of ZnO porous microspheres

Fe-doped ZnO porous microspheres composed of nanosheets were prepared by a simple hydrothermal method combined with post-annealing, and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), Brunauer–Emmett–Teller N₂ adsorption–desorption measurements and photoluminescence (PL) spectra. In this paper we report Fe doping induced modifications in the structural, photoluminescence and gas sensing behavior of ZnO porous microspheres. Our results show that the crystallite size decreases and specific surface area increases with the increase of Fe doping concentration. The PL spectra indicate that the 4 mol% Fe-doped ZnO has higher ratio of donor (V_O and Zn_i) to acceptor (V_Zn) than undoped ZnO. The 4 mol% Fe-doped ZnO sample shows the highest response value to ppb-level n-butanol at 300 °C, and the detected limit of n-butanol is below 10 ppb. In addition, the 4 mol% Fe -doped ZnO sample exhibits good selectivity to n-butanol. The superior sensing properties of the Fe-doped porous ZnO microspheres are contributed to higher donor defects contents combined with larger specific surface area.     

I–V characteristics of ZnO/Cu2O thin film n–i–p heterojunction

ZnO/Cu₂O thin film n–i–p heterojunctions were fabricated by magnetron sputtering. The microstructure, optical, and electrical properties of n-type (n‐) ZnO, insulating (i‐) ZnO, and p-type (p‐) Cu₂O films deposited on glass substrates were characterized by X-Ray diffraction (XRD), spectrophotometer, and the van der Pauw method, respectively. XRD results show that the mean grain size of i-ZnO film is much larger than that of n-ZnO film. The optical band gap energies of n-ZnO, i-ZnO, and p-Cu₂O film are 3.27, 3.47, and 2.00 eV, respectively. The carrier concentration of n-ZnO film is two orders of magnitude larger than that of p-Cu₂O film. The current–voltage (I–V) characteristics of ZnO/Cu₂O thin film n–i–p heterojunctions with different i-ZnO film thicknesses were investigated. Results show that ZnO/Cu₂O n–i–p heterojunctions have well-defined rectifying behavior. All ideality factors of these n–i–p heterojunctions are larger than 2.0. The forward bias threshold voltage and ideality factor increase when i-ZnO layer thickness increases from 100 to 200 nm. An energy band diagram was proposed to analyze the I–V characteristics of these n–i–p heterojunctions.     

Microstructure and varistor properties of ZnO–V2O5–MnO2 ceramics with Ta2O5 addition

The effect of Ta₂O₅ addition on microstructure, electrical properties, and dielectric characteristics of the quaternary ZnO–V₂O₅–MnO₂ vaistor ceramics was investigated. Analysis of the microstructure indicated that the quaternary ZnO–V₂O₅–MnO₂–Ta₂O₅ ceramics consisted of mainly ZnO grain and minor secondary phases such as Zn₃(VO₄)₂, ZnV₂O₄, TaVO₅, and Ta₂O₅. As the amount of Ta₂O₅ increased, the sintered density increased from 94.8 to 97.2% of the theoretical density (5.78 g/cm³ for ZnO), whereas the average grain size decreased from 7.7 to 6.0 μm. The ceramics added with 0.05 mol% Ta₂O₅ exhibited the highest breakdown field (2715 V/cm) and the highest nonlinear coefficient (20). However, further increase caused α to abruptly decrease. The Ta₂O₅ acted as a donor due to the increase of electron concentration in accordance with the amount of Ta₂O₅. The donor concentration increased from 1.97×10¹⁸ to 3.04×10¹⁸cm^?3 with increasing the amount of Ta₂O₅ and the barrier height exhibited the maximum value (0.95 eV) at 0.05 mol% Ta₂O₅.     

Disorder driven optical processes in nanocrystalline ZnO

A systematic study on the modification of optical properties in mechanically milled ZnO powder has been reported here. The average grain size of the powder becomes ～20 nm within 4 h of milling. Fluctuations of average grain size have been noticed at the initial stage of milling (within 15 min). Changes in grain morphology with milling have also been noticed in scanning electron micrographs of the samples. Room temperature optical absorption data shows a systematic red shift of absorption band edge (～3.25 eV). The band tail parameter (extracted from the optical absorption just below the band edge) follows a simple exponential relation with the inverse of the average grain size. Significant increase of the band tail parameter has been noticed at low grain size regime. It has been analyzed that high values of band tail parameter is a representative of V_Zn–V_O type divacancy clusters. Room temperature photoluminescence spectra show decrease (except for 120 min milling) of band edge emission intensity with increase of milling time. Subsequent decrease of sub-band edge emission is, however, less prominent. The variation of PL intensity ratio (intensity at band edge peak with that at 2.3 eV) follows simple exponential decrease with the increase of band tail parameter. This indeed shows that band edge emission in ZnO is related with the overall disorder in the system, not grain size induced only.     

Transparent CdO/n-GaN(0001) heterojunction for optoelectronic applications

Undoped CdO films were prepared by sol–gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current–voltage (I–V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with I_F/I_R value as high as 1.17×10³ at 2 V, low leakage current of 4.88×10⁻⁶ A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3.309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50–70% from 500 nm to 800 nm wavelength range.     

Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (1 1 1) diodes

The effect of rapid thermal annealing on the electrical and structural properties of Ni/Au Schottky contacts on n-InP have been investigated by current–voltage (I–V), capacitance–voltage (C–V), auger electron spectroscopy (AES) and X-ray diffraction (XRD) techniques. The Au/Ni/n-InP Schottky contacts are rapid thermally annealed in the temperature range of 200–500 °C for a duration of 1 min. The Schottky barrier height of as-deposited Ni/Au Schottky contact has been found to be 0.50 eV (I–V) and 0.86 eV (C–V), respectively. It has been found that the Schottky barrier height decreased with increasing annealing temperature as compared to as-deposited sample. The barrier height values obtained are 0.43 eV (I–V), 0.72 eV (C–V) for the samples annealed at 200 °C, 0.45 eV (I–V) and 0.73 eV (C–V) for those at 400 °C. Further increase in annealing temperature to 500 °C the barrier height slightly increased to 0.46 eV (I–V) and 0.78 eV (C–V) compared to the values obtained for the samples annealed at 200 °C and 400 °C. AES and XRD studies showed the formation of indium phases at the Ni/Au and InP interface and may be the reason for the increase in barrier height. The AFM results showed that there is no significant degradation in the surface morphology (rms roughness of 1.56 nm) of the contact even after annealing at 500 °C.     

Comparative study on structural and optical properties of ZnO thin films prepared by PLD using ZnO powder target and ceramic target

Zinc oxide thin films have been obtained in O₂ ambient at a pressure of 1.3 Pa by pulsed laser deposition (PLD) using ZnO powder target and ceramic target. The effect of temperature on structural and optical properties of ZnO thin films was investigated systematically by XRD, SEM, FTIR and PL spectra. The results show that the best structural and optical properties can be achieved for ZnO thin film fabricated at 700 °C using powder target and at 400 °C using ceramic target, respectively. The PL spectrum reveals that the efficiency of UV emission of ZnO thin film fabricated by using powder target is low, and the defect emission of ZnO thin film derived from Zn_i and O_i is high.     

Characteristics of ZnO MSM UV photodetector with Ni contact electrodes on poly propylene carbonate (PPC) plastic substrate

In this study, we report the fabrication of ZnO metal-semiconductor-metal UV photodetector (MSM UV PD) by deposition ZnO thin film on poly propylene carbonate (PPC) plastic substrate using direct current (DC) sputtering technique, and Nickel (Ni) contact as electrodes. The structural, optical and electrical properties of the ZnO thin film were investigated by using atomic force microscopy (AFM), X-Ray diffraction (XRD) measurement, and photoluminescence (PL). The electrical characteristics of the detector were investigated using the current–voltage (I–V) measurements, the dark- and photo-currents were found to be 1.04 and 93.80 μA, respectively. Using forward dark conditions at 5 volt; the barrier height Φ_B was calculated to be 0.675 eV. Under incident wavelength of 385 nm, it was found that the maximum responsivity (R) of the Ni/ZnO/Ni MSM PD was found to be 1.59 A/W.     

p型K:ZnO导电机理的第一性原理研究

基于密度泛函理论,利用局域密度近似的第一性原理平面波赝势方法,对掺K以及含有氢填隙(H_i)、氧空位(V_O)、锌填隙(Zn_i)和锌空位(V_Zn)的K:ZnO电子结构分别进行了研究.结果表明,1) 单独掺K可引入浅受主,但系统总能增高;2) K与H共掺可降低系统总能,提升稳定性;3) V_O在K+H:ZnO中的形成比Zn_i困难得多,二者都是 关键词： 氧化锌 p型 第一性原理 电子结构     

Hydrothermal synthesis of self-emitting Y(V,P)O4 nanophosphors for fabrication of transparent blue-emitting display device

Self-emiting Y(V_x,P_1?x)O₄ blue nanophosphors with various compositons (x=0.1–0.9) were synthesized by a facile hydrothermal route and subsequently annealed at different temperatures of 800–1100 °C for 2 h. A higher content of vanadate in Y(V,P)O₄ nanophosphors resulted in a larger particle growth upon annealing. The blue luminescence under a vacuum ultraviolet excitation increased with an increasing phosphate content. Considering the size and luminescence, Y(V_0.1,P_0.9)O₄ nanophosphors annealed at 800, 1000, and 1100 °C were used for the formation of transparent blue emissive layer. Nanophosphor layer was uniformly deposited on glass substrate by a screen-printing. ～0.9 μm thick nanophosphor layer that was prepared with 1000 °C-annealed Y(V_0.1,P_0.9)O₄ nanophosphor showed a high visible transmittance value of 78%. Transparent blue-emitting test panel of plasma display was simply fabricated using nanophosphor layer/glass as a rear panel and combining it with the front panel used in the current plasma display panel, and their discharge luminance properties were discussed.     

Strong violet emission from zinc oxide dumbbell-like microrods and nanowires

ZnO of different morphologies with controlled size and aspect ratio (l/d) such as dumbbell-like microrods, thick nanowires and thin nanowires were prepared by a hydrothermal method. Possible mechanisms for the formation of ZnO crystals with the different morphologies were discussed. Strong violet photoluminescence bands at～413 nm (3.0 eV) without band edge emission were observed from the dumbbell-like ZnO microrods and thick nanowires. Correspondingly, the thin nanowires showed a weak shoulder UV photoluminescence band at～390 nm. Such result indicates that the photoluminescence properties could be improved by the morphologies or aspect ratio (l/d) and the potential fabrication violet-light-emitting devices.     

Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer

The current–voltage (I–V) characteristics of Al/SnO₂/p-Si (MIS) Schottky diodes prepared by means of spray deposition method have been measured at 80, 295 and 350 K. In order to interpret the experimentally observed non-ideal Al/SnO₂/p-Si Schottky diode parameters such as, the series resistance R_s, barrier height Φ_B and ideality factor n, a novel calculation method has been reported by taking into account the applied voltage drop across interfacial oxide layer V_i and ideality factor n in the current transport mechanism. The values obtained for V_i were subtracted from the applied voltage values V and then the values of R_s were recalculated. The parameters obtained by accounting for the voltage drop V_i have been compared with those obtained without considering the above voltage drop. It is shown that the values of R_s estimated from Cheung’s method were strongly temperature-dependent and decreased with increasing temperature. It is shown that the voltage drop across the interfacial layer will increase the ideality factor and the voltage dependence of the I–V characteristics. The interface state density N_ss of the diodes has an exponential growth with bias towards the top of the valance band for each temperature; for example, from 2.37 × 10¹³ eV⁻¹ cm⁻² in 0.70−E_v eV to 7.47 × 10¹³ eV⁻¹ cm⁻² in 0.62−E_v eV for 295 K. The mean N_ss estimated from the I–V measurements decreased with increasing the temperature from 8.29 × 10¹³ to 2.20 × 10¹³ eV⁻¹ cm⁻².     

Determining the work function of a carbon-cone cold-field emitter by in situ electron holography

Cold-field emission properties of carbon cone nanotips (CCnTs) have been studied in situ in the transmission electron microscope (TEM). The current as a function of voltage, i(V), was measured and analyzed using the Fowler–Nordheim (F–N) equation. Off-axis electron holography was employed to map the electric field around the tip at the nanometer scale, and combined with finite element modeling, a quantitative value of the electric field has been obtained. For a tip-anode separation distance of 680 nm (measured with TEM) and a field emission onset voltage of 80 V, the local electric field was 2.55 V/nm. With this knowledge together with recorded i(V) curves, a work function of 4.8 ± 0.3 eV for the CCnT was extracted using the F–N equation.     

Effect of Ce and Cu co-doping on the structural,morphological, and optical properties of ZnO nanocrystals and first principle investigation of their stability and magnetic properties

Ce, Cu co-doped ZnO (Zn_1−2xCe_xCu_xO: x=0.00, 0.01, 0.02, 0.03, 0.04 and 0.05) nanocrystals were synthesized by a microwave combustion method. These nanocrystals were investigated by using X-ray diffraction (XRD), UV–visible diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), and vibrating sample magnetometer (VSM). The stability and magnetic properties of Ce and Cu co-doped ZnO were probed by first principle calculations. XRD results revealed that all the compositions are single crystalline. hexagonal wurtzite structure. The optical band gap of pure ZnO was found to be 3.22 eV, and it decreased from 3.15 to 3.10 eV with an increase in the concentration of Cu and Ce content. The morphologies of Ce and Cu co-doped ZnO samples confirmed the formation of nanocrystals with an average grain size ranging from 70 to 150 nm. The magnetization measurement results affirmed the antiferro and ferromagnetic state for Ce and Cu co-doped ZnO samples and this is in agreement with the first principles theoretical calculations.     

Sol–gel synthesis and luminescent properties of SiO2/Zn2SiO4 and SiO2/Zn2SiO4:V composite materials

Undoped and vanadium-doped Zn₂SiO₄ particles embedded in silica host matrix were prepared by a simple solid-phase reaction after the incorporation of ZnO and ZnO:V nanoparticles, respectively, in silica monolith using the sol–gel method with supercritical drying of ethyl alcohol in two steps. After supercritical drying and annealing in the temperature range between 1423 and 1473 K in an air atmosphere, the photoluminescence (PL) measurements show a band centered at about 760 nm in the case of non-doped Zn₂SiO₄ which is attributed to energy transfer from Zn₂SiO₄ particles to NBOHs interface defects. In the case of vanadium doped Zn₂SiO₄, the PL reveals a band centered at about 540 nm attributed to the vanadium in the interfaces between Zn₂SiO₄ particles and SiO₂ host matrix. Photoluminescence excitation (PLE) measurements show different origins of the emission bands. The PLE band (～240–350 nm) may be understood as an energy transfer process from O^2? to V⁵⁺ which occurs intrinsically in the vanadyl group.     

Influence of Cu doping on the microstructure,optical properties and photoluminescence features of Cd0.9Zn0.1S nanoparticles

Cd_0.9−xZn_0.1Cu_xS (0≤x≤0.06) nanoparticles were successfully synthesized by a conventional chemical co-precipitation method at room temperature. Crystalline phases and optical absorption of the nanoparticles have been studied by X-ray diffraction (XRD) and UV–visible spectrophotometer. XRD confirms the phase singularity of the synthesized material, which also confirmed the formation of Cd–Zn–Cu–S alloy nanocrystals rather than separate nucleation or phase formation. Elemental composition was examined by the energy dispersive X-ray analysis and the microstructure was examined by scanning electron microscope. The blue shift of absorption edge below Cu=2% is responsible for dominance of Cu⁺ while at higher Cu concentration dominated Cu²⁺, d–d transition may exist. It is suggested that the addition of third metal ion (Cu²⁺/Cu⁺) is an effective way to improve the optical property and stability of the Cd_0.9Zn_0.1S solid solutions. When Cu is introduced, stretching of Cd–Zn–Cu–S bond is shifted lower wave number side from 678 cm⁻¹ (Cu=0%) to 671 cm⁻¹ (Cu=6%) due to the presence of Cu in Cd–Zn–S lattice and also the size effect. The variation in blue band emission peak from 456 nm (∼2.72 eV) to 482 nm (∼2.58 eV) by Cu-doping is corresponding to the inter-band radiation combination of photo-generated electrons and holes. Intensity of red band emission centered at 656 nm significantly increased up to Cu=4%; beyond 4% it is decreased due to the quenching of Cu concentration.     

Optical and physical characteristics of In-doped ZnO nanorods

In this paper the effect of indium dopants on structure, optical, electrical and mechanical properties of ZnO nanorods are studied. The average surface potentials and the surface currents of ZnO:In nanorods were 0.25–0.84 mV and 2.2–200 MΩ-cm, respectively. The turn-on threshold field for the vertical ZnO nanorods was around 2–16 V μm⁻¹. Emission current densities of 3.3–911.4 mA cm⁻² were obtained for an electrical field of 60–160 V μm⁻¹. The photoluminescence (PL) spectrum measured at 15–300 K showed that the intensity of the peak at 2.06 eV increased with decreasing temperature, while the peak at 2.06 eV further red shifted and the peak at 3.39 eV blue shifted.     

Oxygen diffusion studies on (Y2O3)2(Sc2O3)9(ZrO2)89

The oxygen tracer diffusion coefficient (D?) has been measured for 9 mol% scandia 2 mol% yttria co-doped zirconia solid solution, (Y₂O₃)₂(Sc₂O₃)₉(ZrO₂)₈₉, using isotopic exchange and line scanning by Secondary Ion Mass Spectrometry, as a function of temperature. The values of the tracer diffusion coefficient are in the range of 10^? 8–10^? 7 cm² s^? 1 and the Arrhenius activation energy was calculated to be 0.9 eV; both valid in the temperature range of 600–900 °C. Electrical conductivity measurements were carried out using 2-probe and 4-probe AC impedance spectroscopy, and a 4-point DC method at various temperatures. There is a good agreement between the measured tracer diffusion coefficients (D?, Ea = 0.9 eV) and the diffusion coefficients calculated from the DC total conductivity data (D_σ, Ea = 1.0 eV), the latter calculated using the Nernst–Einstein relationship.     

Possible approach to fabricate p-type ZnO through the Be–N codoping method: First-principles calculations

An ab initio calculation based on density functional theory is applied to study Be–N codoped ZnO and the possible complexes are discussed. The calculated results show that the substitutional N defect at the O site (N_O) easily binds with the interstitial Be (Be_i), rather than the substitutional Be defect at the Zn site (Be_Zn). This indicates that 4Be_Zn–N_O complex is not a stable acceptor and is unlikely to form. Fortunately, Be_i–3N_O is of high structural stability and its transition energy is very low due to the impurity band caused by the Be_i–2N_O passive complex. Therefore, Be_i–3N_O can serve as a stable source of p-type conductivity. In addition, it is also suggested that Be–N codoped p-type ZnO can be prepared under Zn-rich condition because Be_i–3N_O has the lowest formation energy in this environment.     

Influence of B2O3 on microstructure and microwave dielectric properties of 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system

The effects of B₂O₃ on the microstructure and microwave dielectric properties of the 0.4Nd(Mg_0.4Zn_0.1Sn_0.5)O₃–0.6Ca_0.8Sr_0.2TiO₃ ceramic system were investigated with a view to their use in microwave devices. A B₂O₃-doped 0.4Nd(Mg_0.4Zn_0.1Sn_0.5)O₃–0.6Ca_0.8Sr_0.2TiO₃ ceramic system was prepared by the conventional solid-state method. The X-ray diffraction patterns of the B₂O₃-doped 0.4Nd(Mg_0.4Zn_0.1Sn_0.5)O₃–0.6Ca_0.8Sr_0.2TiO₃ ceramic system did not significantly vary with sintering temperature. A 0.5 wt% B₂O₃-doped 0.4Nd(Mg_0.4Zn_0.1Sn_0.5)O₃–0.6Ca_0.8Sr_0.2TiO₃ ceramic system that was sintered at 1350 °C for 4 h had a dielectric constant of 38.3, a quality factor Qf of 35,000 GHz, and a temperature coefficient of resonant frequency of ?4.8 ppm/°C.