Spin Nernst effect in the absence of a magnetic field

We study the spin Nernst effect of a mesoscopic four-terminal cross-bar device with the Rashba spin–orbit interaction (SOI) in the absence of a magnetic field. The interplay between the spin Nernst effect and the seebeck coefficient is investigated for a wide range of the Rashba SOI. When no peaks appeared in the seebeck coefficient, an oscillatory spin Nernst effect still occurs. In addition, the disorder effect on the spin Nernst effect is also studied. We find that the spin Nernst effect can be enhanced up to threefold by disorder. Besides, due to the interface effect, the counter propagating of the charge current to the direction of the temperature gradient is possible for a nonuniform system.     

Effects of multi-band mixing on the spin-polarized transport in quasi-one-dimensional electron waveguides

We present numerical calculations of the energy dispersion of spin-polarized electrons in quasi-one-dimensional electronic waveguides in the presence of Rashba spin–orbit interaction (SOI), by using an efficient expanded basis method. Within this model, the general mixing between any two subbands is taken into account. We investigate the properties of spin-polarized transport in the nonuniform SOI system. It is found that the multi-band mixing brings significant effects on the properties of multiple subbands transport in the regime of high energy, especially for the cases of the wide waveguide, the strong SOI and the long extension of the SOI region.     

Charge Hall effect generated by spin-polarized current injected into Rashba spin orbit coupling media

Using the Keldysh Green’s function method, we study theoretically the electron accumulation induced by the inverse spin Hall effect in a spin valve structure in which a clean quantum wire formed from a 2D electron gas (2DEG) with Rashba/Dresselahaus spin orbit interaction (SOI) is connected to two ferromagnet electrodes. In a nonequilibrium situation when a spin current with an out-of plane (the 2DEG plane) spin polarization is driven through the SOI region by an external voltage, non-equilibrium electron accumulation or a Hall voltage forms at the two lateral sides of the quantum wire and exhibits an oscillation along the wire like the Rashba spin precession; the magnetization directions of FMs affect the Hall voltage and their parallel or antiparallel alignment along the normal direction of the 2DEG plane is most favorable to the Hall voltage. In an equilibrium situation, two planar magnetizations which are not collinear can generate an electron accumulation/a Hall voltage too. When one of the FM electrodes is replaced by a normal metal (NM), the electron accumulation is still present along the wire and its magnitude remains nearly unchanged in the biased case, whereas in the unbiased case it is reduced significantly and even vanishes.     

Spin cloud induced around an elastic scatterer by the intrinsic spin hall effect

Similar to the Landauer electric dipole created around an impurity by the electric current, a spin polarized cloud of electrons can be induced by the intrinsic spin Hall effect near a spin independent elastic scatterer. It is shown that in the ballistic range around the impurity, such a cloud appears in the case of Rashba spin-orbit interaction, even though the bulk spin Hall current is absent.     

Electrically controllable spin transport in bilayer graphene with Rashba spin-orbit interaction

We study the spin transport in bilayer graphene nanoribbons (BGNs) in the presence of Rashba spin-orbit interaction (SOI) and external gate voltages. It is found that the spin polarization can be significantly enhanced by the interlayer asymmetry or longitudinal mirror asymmetry produced by external gate voltages. Rashba SOI alone in BGNs can only generate current with spin polarization along the in-plane y direction, but the polarization components can be found along the x, y and z directions when a gate voltage is applied. High spin polarization with flexible orientation is obtained in the proposed device. Our findings shed new light on the generation of highly spin-polarized current in BGNs without external magnetic fields, which could have useful applications in spintronics device design.     

Interfacial spin Hall current in a Josephson junction with Rashba spin—orbit coupling

We theoretically investigate the spin transport properties of the Cooper pairs in a conventional Josephson junction with Rashba spin-orbit coupling considered in one of the superconducting leads.It is found that an angle-resolved spin supercurrent flows through the junction and a nonzero interfacial spin Hall current driven by the superconducting phase difference also appears at the interface.The physical origin of this is that the Rashba spin-orbit coupling can induce a triplet order parameter in the s-wave superconductor.The interfacial spin Hall current dependences on the system parameters are also discussed.     

Electrical measurement of spin Hall current in mesoscopic ring: inhomogeneous Rashba effect

We investigate theoretically the spin Hall current in an inhomogeneous Rashba mesoscopic ring attached to four terminals. It is shown that a voltage drop can be tuned by adjusting the gate voltage due to the inhomogeneous Rashba effect, and provides us a tool to measure spin Hall current electrically. The spin Hall current and the ratio of the probe voltages can survive and keep their obvious relationship even in the presence of disorder. The regular relationship between the spin Hall conductance and the ratio of the probe voltages will be destroyed by the interference between different channels in multi-channel ring.     

Nondissipative spin Hall effect via quantized edge transport

The spin Hall effect in a two-dimensional electron system on honeycomb lattice with both intrinsic and Rashba spin-orbit couplings is studied numerically. Integer quantized spin Hall conductance is obtained at the zero Rashba coupling limit when electron Fermi energy lies in the energy gap created by the intrinsic spin-orbit coupling, in agreement with recent theoretical prediction. While nonzero Rashba coupling destroys electron spin conservation, the spin Hall conductance is found to remain near the quantized value, being insensitive to disorder scattering, until the energy gap collapses with increasing the Rashba coupling. We further show that the charge transport through counterpropagating spin-polarized edge channels is well quantized, which is associated with a topological invariant of the system.     

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.     

Spin filtering in a nonuniform quantum wire with Rashba spin-orbit interaction

We investigate theoretically the spin-polarized electron transport for a wide-narrow-wide (WNW) quantum wire under the modulation of Rashba spin-orbit interaction (SOI). The influence of both the structure of the quantum wire and the interference between different pairs of subbands on the spin-polarized electron transport is taken into account simultaneously via the spin-resolved lattice Green function method. It is found that a very large vertical spin-polarized current can be generated by the SOI-induced effective magnetic field at the structure-induced Fano resonance even in the presence of strong disorder. Furthermore, the magnitude of the spin polarization can be tuned by the Rashba SOI strength and structural parameters. Those results may provide an effective way to design a spin filter device without containing any magnetic materials or applying a magnetic field.     

Persistent current in a magnetized Rashba ring

We theoretically study the persistent currents flowing in a Rashba quantum ring subjected to the Rashba spin-orbit interaction. By introducing uniform or nonuniform magnetization into the ring, we find that a nonzero persistent charge current circulates in the ring, which stems from the original equilibrium spin current due to the Rashba spin-orbit interaction. Because of broken time reversal symmetry, the two oppositely flowing spin-up and spin-down charge currents of the equilibrium spin current are no longer equal, and so a net persistent charge current can flow in the system. It is also found that the persistent current can be modulated by the Fermi energy, the Rashba spin-orbit interaction strength and the magnetization in the ring. Moreover, the magnetization perpendicular to the ring plane can optimize the current. The persistent current flowing in the ring is a manifestation of the nonzero equilibrium spin current existing in the ring.     

Interplay of Rashba spin orbit coupling and disorder in the conductance properties of a four terminal junction device

We report a thorough theoretical investigation on the quantum transport of a disordered four terminal device in the presence of Rashba spin orbit coupling (RSOC) in two dimensions. Specifically we compute the behaviour of the longitudinal (charge) conductance, spin Hall conductance and spin Hall conductance fluctuation as a function of the strength of disorder and Rashba spin orbit interaction using the Landauer Büttiker formalism via Green’s function technique. Our numerical calculations reveal that both the conductances diminish with disorder. At smaller values of the RSOC parameter, the longitudinal and spin Hall conductances increase, while both vanish in the strong RSOC limit. The spin current is more drastically affected by both disorder and RSOC than its charge counterpart. The spin Hall conductance fluctuation does not show any universality in terms of its value and it depends on both disorder as well as on the RSOC strength. Thus the spin Hall conductance fluctuation has a distinct character compared to the fluctuation in the longitudinal conductance. Further one parameter scaling theory is studied to assess the transition to a metallic regime as claimed in literature and we find no confirmation about the emergence of a metallic state induced by RSOC.     

Spin Hall effect on edge magnetization and electric conductance of a 2D semiconductor strip

The intrinsic spin Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip, as well as the electric current in the longitudinal direction, exhibit damped oscillations as a function of the width and strength of the Dresselhaus spin-orbit interaction. Cubic terms of this interaction are crucial for spin accumulation near the edges. As expected, no effect on the spin accumulation and electric conductance have been found in case of Rashba spin-orbit interaction.     

半导体中自旋轨道耦合及自旋霍尔效应

本文主要评述和介绍半导体微结构中自旋轨道耦合的研究和最近的研究进展。我们细致地讨论了半导体微结构中自旋轨道耦合的物理起源和窄带隙半导体量子阱中的自旋霍尔效应。我们发现目前国际上广泛采用的线性Rashba模型在较大的电子平面波矢处失效:即自旋轨道耦合导致的能带自旋劈裂不再随电子波矢的增加而增加,而是开始下降,即出现强烈的非线性行为。这种非线性的行为起源于导带和价带间耦合的减弱。这种非线性行为还会导致电子的D’yakonov-Perel’自旋弛豫速率在较高能量处下降,与线性模型的结果完全相反。在此基础上,我们构造统一描述电子和空穴自旋霍尔效应的理论框架。我们的方法可以非微扰地计入自旋轨道耦合对本征自旋霍尔效应的影响。我们将此方法应用于强自旋轨道耦合的情形,即窄带隙CdHgTe/CdTe半导体量子阱。我们发现调节外电场或量子阱的阱宽可以作为导致量子相变和本征自旋霍尔效应的开关。我们的工作可能会为区别和实验验证本征自旋霍尔效应提供物理基础。     

Electrical generation of pure spin current with oscillating spin-orbit interaction

We propose an electrical scheme for the generation of a pure spin current without a charge current in a two-terminal device, which consists of a scattering region of a two-dimensional electron gas (2DEG) with Rashba (R) and/or Dresselhaus (S) spin-orbit interaction (SOI) and two normal leads. The SOI is modulated by a time-dependent gate voltage to pump a spin current. Based on a tight-binding model and the Keldysh Green’s function technique, we obtain the analytical expression of the spin current. It is shown that a pure spin current can be pumped out, and its magnitude could be modulated by device parameters such as the oscillating frequency of the SOI, as well as the SOI strength. Moreover, the spin polarisation direction of the spin current could also be tuned by the strength ratio between RSOI and DSOI. Our proposal provides not only a fully electrical means to generate a pure spin current but also a way to control the spin polarisation direction of the generated spin current.     

Absence of spontaneous magnetic order of lattice spins coupled to itinerant interacting electrons in one and two dimensions

We extend the Mermin-Wagner theorem to a system of lattice spins which are spin coupled to itinerant and interacting charge carriers. We use the Bogoliubov inequality to rigorously prove that neither (anti-) ferromagnetic nor helical long-range order is possible in one and two dimensions at any finite temperature. Our proof applies to a wide class of models including any form of electron-electron and single-electron interactions that are independent of spin. In the presence of Rashba or Dresselhaus spin-orbit interactions (SOI) magnetic order is not excluded and intimately connected to equilibrium spin currents. However, in the special case when Rashba and Dresselhaus SOIs are tuned to be equal, magnetic order is excluded again. This opens up a new possibility to control magnetism electrically.     

Spin and spin-valley Hall effects in a honeycomb lattice with antiferromagnetism and spin-orbit couplings

We study linear response to a longitudinal electric field on an antiferromagnetic honeycomb lattice with intrinsic and Rashba spin-orbit couplings (SOCs). It is found that the spin-valley Hall effect could emerge alone or coexist with the spin Hall effect. The spin and spin-valley Hall conductivities exhibit some peculiarities that depend on the distinct topological states of the graphene lattice. Furthermore, the spin and spin-valley Hall conductivities could be remarkably modulated by changing the Fermi level. Our findings suggest that the antiferromagnetic honeycomb lattice with SOCs is an excellent platform for potential applications of spintronics and valleytronics.     

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.     

Spin Hall and spin Nernst effects in graphene with intrinsic and Rashba spin-orbit interactions

The spin Hall and spin Nernst effects in graphene are studied based on Green’s function formalism.We calculate intrinsic contributions to spin Hall and spin Nernst conductivities in the Kane-Mele model with various structures.When both intrinsic and Rashba spin-orbit interactions are present,their interplay leads to some characteristics of the dependence of spin Hall and spin Nernst conductivities on the Fermi level.When the Rashba spin-orbit interaction is smaller than intrinsic spin-orbit coupling,a weak kink in the conductance appears.The kink disappears and a divergence appears when the Rashba spin-orbit interaction enhances.When the Rashba spin-orbit interaction approaches and is stronger than intrinsic spin-orbit coupling,the divergence becomes more obvious.     

Spin Hall effect and spin current generation in two-dimensional systems with random Rashba spin–orbit coupling

We consider a new effect induced by spin–orbit coupling in a two-dimensional electron gas confined in a semiconductor quantum well, i.e. the possibility of spin current generation by fluctuating random Rashba spin–orbit interaction, with the corresponding mean value of the interaction being equal to zero. Our main results suggest that – in contrast to the spatially uniform Rashba spin–orbit interaction – the spin Hall effect does not vanish for typical disorder strengths. We also point out some other possibilities of using such a random Rashba coupling for the generation of spin density and spin current in two-dimensional nonmagnetic structures.