Thermoelectrics in an array of molecular junctions

The room temperature thermoelectric properties of a three-dimensional array of molecular junctions are calculated. The array is composed of n-doped silicon nanoparticles where the surfaces are partially covered with polar molecules and the nanoparticles are bridged by trans-polyacetylene molecules. The role of the polar molecules is to reduce the band bending in the n-doped silicon nanoparticles and to shift the electronic resonances of the bridging molecules to the nanoparticle conduction band edges where the molecular resonances act as electron energy filters. The transmission coefficients of the bridging molecules that appear in the formulas for the Seebeck coefficient, the electrical conductance, and the electronic thermal conductance, are calculated using the nonequilibrium Green's function technique. A simple tight-binding Hamiltonian is used to describe the bridging molecules, and the self-energy term is calculated using the parabolic conduction band approximation. The dependencies of the thermoelectric properties of the molecular junctions on the silicon doping concentration and on the molecule-nanoparticle coupling are discussed. The maximal achievable thermoelectric figure of merit ZT of the array is estimated as a function of the phononic thermal conductance of the bridging molecules and the doping of the nanoparticles. The power factor of the array is also calculated. For sufficiently small phononic thermal conductances of the bridging molecules, very high ZT values are predicted.     

Superionic phase transition in silver chalcogenide nanocrystals realizing optimized thermoelectric performance

Thermoelectric has long been recognized as a potentially transformative energy conversion technology due to its ability to convert heat directly into electricity. However, how to optimize the three interdependent thermoelectric parameters (i.e., electrical conductivity σ, Seebeck coefficient S, and thermal conductivity κ) for improving thermoelectric properties is still challenging. Here, we put forward for the first time the semiconductor-superionic conductor phase transition as a new and effective way to selectively optimize the thermoelectric power factor based on the modulation of the electric transport property across the phase transition. Ultra low value of thermal conductivity was successfully retained over the whole investigated temperature range through the reduction of grain size. As a result, taking monodisperse Ag(2)Se nanocrystals for an example, the maximized ZT value can be achieved around the temperature of phase transition. Furthermore, along with the effective scattering of short-wavelength phonons by atomic defects created by alloying, the alloyed ternary silver chalcogenide compounds, monodisperse Ag(4)SeS nanocrystals, show better ZT value around phase transition temperature, which is cooperatively contributed by superionic phase transition and alloying at nanoscale.     

Heavy doping and band engineering by potassium to improve the thermoelectric figure of merit in p-type PbTe, PbSe, and PbTe(1-y)Se(y)

We present detailed studies of potassium doping in PbTe(1-y)Se(y) (y = 0, 0.15, 0.25, 0.75, 0.85, 0.95, and 1). It was found that Se increases the doping concentration of K in PbTe as a result of the balance of electronegativity and also lowers the lattice thermal conductivity because of the increased number of point defects. Tuning the composition and carrier concentration to increase the density of states around the Fermi level results in higher Seebeck coefficients for the two valence bands of PbTe(1-y)Se(y). Peak thermoelectric figure of merit (ZT) values of ~1.6 and ~1.7 were obtained for Te-rich K(0.02)Pb(0.98)Te(0.75)Se(0.25) at 773 K and Se-rich K(0.02)Pb(0.98)Te(0.15)Se(0.85) at 873 K, respectively. However, the average ZT was higher in Te-rich compositions than in Se-rich compositions, with the best found in K(0.02)Pb(0.98)Te(0.75)Se(0.25). Such a result is due to the improved electron transport afforded by heavy K doping with the assistance of Se.     

Thermoelectric properties of nanocomposite thin films prepared with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) and graphene

Carbon nanotubes (CNTs), either single wall carbon nanotubes (SWNTs) or multiwall carbon nanotubes (MWNTs), can improve the thermoelectric properties of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT?:?PSS), but it requires addition of 30-40 wt% CNTs. We report that the figure of merit (ZT) value of PEDOT?:?PSS thin film for thermoelectric property is increased about 10 times by incorporating 2 wt% of graphene. PEDOT?:?PSS thin films containing 1, 2, 3 wt% graphene are prepared by solution spin coating method. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy analyses identified the strong π-π interactions which facilitated the dispersion between graphene and PEDOT?:?PSS. The uniformly distributed graphene increased the interfacial area by 2-10 times as compared with CNT based on the same weight. The power factor and ZT value of PEDOT?:?PSS thin film containing 2 wt% graphene was 11.09 μW mK(-2) and 2.1 × 10(-2), respectively. This enhancement arises from the facilitated carrier transfer between PEDOT?:?PSS and graphene as well as the high electron mobility of graphene (200,000 cm(2) V(-1) s(-1)). Furthermore the porous structure of the thin film decreases the thermal conductivity resulting in a high ZT value, which is higher by 20% than that for a PEDOT?:?PSS thin film containing 35 wt% SWNTs.     

Enhanced TE properties of Cu@Ag/Bi2Te3 nanocomposites by decoupling electrical and thermal properties

Cu@Ag/Bi2Te3 nanocomposites were prepared for the first time by ultrasonic dispersion-rapid freezedrying method combined with spark plasma sintering(SPS).By changing the content of Cu@Ag nanoparticle,we could modulate the temperature dependent thermoelectric properties.The highest ZT value can be obtained at 450 K for 1 vol%Cu@Ag/Bi2Te3,which is benefited from the decoupling of electrical and thermal properties.With the increase of electrical conductivity,the absolute value of Seebeck coefficient lifts while the thermal conductivity declines.Meanwhile,the average ZT value between 300 K and 475 K was 0.61 for 1 vol%Cu@Ag/Bi2Te3,which is much higher than that of pristine Bi2 Te3.Therefore,the decoupling effect of Cu@Ag nanoparticles incorporation could be a promising method to broaden the application of Bi2Te3 based thermoelectric materials.     

Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3(-)

Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic "real" properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoelectric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness ( approximately 0.4 nm) of SrTiO 3.     

Remarkable enhancement in thermoelectric performance of BiCuSeO by Cu deficiencies

A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu(1-x)SeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu(2)Se(2))(2-) layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 10(3) S m(-1) for Bicu(0.975)Seo at 650 °C, much larger than 470 S m(-1) for pristine BiCuSeO. Featured with very low thermal conductivity (～0.5 W m(-1) K(-1)) and a large Seebeck coefficient (+273 μV K(-1)), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu(0.975)SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.     

CaMn(1-x)Nb(x)O3 (x < or = 0.08) perovskite-type phases as promising new high-temperature n-type thermoelectric materials

Perovskite-type CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) compounds were synthesized by applying both a "chimie douce" (SC) synthesis and a classical solid state reaction (SSR) method. The crystallographic parameters of the resulting phases were determined from X-ray, electron, and neutron diffraction data. The manganese oxidations states (Mn(4+)/Mn(3+)) were investigated by X-ray photoemission spectroscopy. The orthorhombic CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) phases were studied in terms of their high-temperature thermoelectric properties (Seebeck coefficient, electrical resistivity, and thermal conductivity). Differences in electrical transport and thermal properties can be correlated with different microstructures obtained by the two synthesis methods. In the high-temperature range, the electron-doped manganate phases exhibit large absolute Seebeck coefficient and low electrical resistivity values, resulting in a high power factor, PF (e.g., for x = 0.05, S(1000K) = -180 microV K(-1), rho(1000K) = 16.8 mohms cm, and PF > 1.90 x 10(-4) W m(-1) K(-2) for 450 K < T < 1070 K). Furthermore, lower thermal conductivity values are achieved for the SC-derived phases (kappa < 1 W m(-1) K(-1)) compared to the SSR compounds. High power factors combined with low thermal conductivity (leading to ZT values > 0.3) make these phases the best perovskitic candidates as n-type polycrystalline thermoelectric materials operating in air at high temperatures.     

DFT study of the half-metallic variant perovskites A2OsX6 (A = Rb/Cs; X = Cl/Br) for spintronic and thermoelectric applications

We present our results of the spin-polarized calculations on the structural, magneto-electronic, thermodynamic, and thermoelectric properties of vacancy-ordered double perovskites A₂OsX₆ (A = Rb/Cs; X = Cl/Br). We utilized the Wu-Cohen generalized gradient approximation (Wu-GGA) and the mBJ scheme to determine a more reliable electronic structure. The compounds exhibit negative formation energy, suitable tolerance factor, and a stable phonon spectrum, indicating their stability. The compounds show half-metallicity, acting as semiconductors with direct band gaps between 2 and 3 eV in the spin-up orientation while metallic in the spin-down. Each compound shows a total spin magnetic moment of 2.00 μB per formula unit, with Os-t²g states contributing the most (~1.5 μB). The computed thermoelectric coefficient indicates the usability of these compounds across a wide temperature range (200–800 K) with high electrical conductivity and low electronic thermal conductivity. The compounds exhibit high Seebeck coefficient and figure of merit (ZT), making them suitable for thermoelectric applications. With ferromagnetic and half-metallic characteristics, these compounds could be promising candidates for spintronics, thermoelectronic, and data storage applications.     

Thermoelectric transport properties in atomic scale conductors

The thermoelectric transport properties in atomic scale conductors consisting of a Si atom connected by two electrodes are investigated. It is found that both the electrical current and the heat current have two contributions, one from the voltage and the other from the temperature gradient. The quantities such as the Seebeck thermopower and the thermal conductance that characterize the thermoelectric transport properties of the tunnel atomic junction are studied quantitatively with a first-principles technique within the framework of Landauer-Buttiker formalism in the linear response regime. A finite thermopower only exists in a very narrow range where the energy derivative of the transmission function is nonzero. The thermopower anomaly is observed in the tunneling regime in this device but this does not violate the thermodynamic law with respect to the heat current.     

Ag/Yb掺杂对Ca_3Co_(3.9)Cu_(0.1)O_(9-δ)热电性能的影响

采用溶胶凝胶及冷压方法,通过在Ca_3Co_(3.9)Cu_(0.1)O_(9-δ)体系中引入不同量的Ag~+或Yb~(3+)离子来调控体系的热电性能,制备了可在300~880 K下稳定存在且热电性能优良的陶瓷材料Ca_(3-x)Ag_xCo_(3.9)Cu_(0.1)O_(9-δ)(x=0.1,0.15,0.2,0.3)和Ca_(3-y)Yb_yCo_(3.9)Cu_(0.1)O_(9-δ)(y=0.05,0.1,0.2,0.3).通过X射线衍射(XRD)和扫描电子显微镜(SEM)等测试手段对产物进行了表征,结果显示所制备的样品纯度较高,晶粒均匀,晶粒间较致密.适量的Ag~+,Yb~(3+)离子取代Ca~(2+)离子固溶到晶体中使制备的双掺杂材料晶胞体积发生了变化,但并未引起晶体对称结构的变化.电阻率和Seebeck系数的表征结果说明双掺杂优化了载流子的浓度,随着温度的升高电阻率不断减小,Seebeck系数不断增大.经过计算可知Seebeck系数的增大还有电子有效质量的贡献.热导率表征结果显示双掺杂体系的热导率随着温度的升高而减小,其中声子热导依然起主要作用,这与单掺杂体系的结果一致.随着温度的升高,双掺杂样品Ca_(2.7)Ag_(0.3)Co_(3.9)Cu_(0.1)O_(9-δ)在880 K下ZT值达到最大,为0.2.     

An ab-initio study of structural,opto-electronic and thermoelectric aspects of zinc sulfide and zinc telluride

In this study, structural, electronic, optical and thermoelectric aspects of Zinc Sulfide (ZnS) and Zinc Telluride (ZnTe) have been explored in detail. These calculations have been done by utilizing FP-LAPW method via Density Functional Theory (DFT). In order to attain accurate band gaps, opto-electronic properties are evaluated with modified Becke Johnson potential (mBJ). From band structure plots, both ZnS and ZnTe reveals direct (Γ_v–Γ_C) band gap semiconductors in nature with bandgap value equal to 3.5 and 2.3 eV while in Density Of States (DOS) major influence is observed due to p states of S/Te and d state of Zn. Prominent variation of optical responses such as high values of imaginary dielectric constants 𝜀1 (ω) and n (ω) refractive index suggests that ZnS and ZnTe are applicant materials for future photonics and microelectronic devices. The thermoelectric aspects were explored by Boltz Trap code to determine electrical and thermal conductivities, Seebeck coefficients, power factors and figure of merit. The figure of merits is closer to 1 while compared with p-type ZnS and ZnTe, n-type ZnS and ZnTe has good thermoelectric properties, which are attributed to low thermal conductivity of the hole and larger effective mass. The goal of this research is to investigate not only the detailed physical aspects but also to provide an overview of its future applications in optoelectronics, displays, sensors and microelectronic industry.     

添加La的Bi2Te3和Bi0.5Sb1.5Te3热电材料的电磁感应熔炼法制备及其热电性能

在N2气保护下,采用电磁感应法制备了添加La的Bi2Te3和Bi0.5Sb1.5Te3。运用X射线粉末衍射、电感耦合等离子光谱和扫描电子显微镜对材料的物相成分和形貌进行了表征。研究了La对Bi2Te3和Bi0.5Sb1.5Te3热电材料的电导率(σ)、Seebeck系数(S)和热导率(κ)的影响。实验结果表明,添加La明显降低了2种材料的热导率,提高了热电优值(ZT),添加La的Bi0.5Sb1.5Te3的热电优值在室温超过了1。     

Nanostructured AgPb(m)SbTe(m+2) system bulk materials with enhanced thermoelectric performance

Nanostructured Ag0.8Pbm+xSbTem+2 (m = 18, x = 4.5) system thermoelectric materials have been fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods followed by annealing for several days to investigate the effect on microstructure and thermoelectric performance. It was found that appropriate annealing treatment could reduce both the electrical resistivity and the thermal conductivity at the same time, consequently greatly enhancing the thermoelectric performance. A low electrical resistivity of 2 x 10-3 Ohm-cm and low thermal conductivity of 0.89 W m-1 K-1 were obtained for the sample annealed for 30 days at 700 K. The very low thermal conductivity is supposed to be due to the nanoscopic Ag/Sb-rich regions embedded in the matrix. A high ZT value of 1.5 at 700 K has been achieved for the sample annealed for 30 days.     

导电聚合物热电材料研究进展

导电聚合物在室温下具有较高的电导率(σ)、较低的热导率(κ)、柔韧性好、易于合成、原料来源丰富、对环境无污染等优势,是目前最具有热电应用潜力的有机热电材料之一。然而,目前针对导电聚合物作为有机热电材料的相关研究依然处于初级阶段,其在空气气氛中的化学稳定性问题、低的热电优值及尚未完全明确的热电机制一直困扰着研究人员。本文主要针对以上问题,在对前人的研究成果进行综述的基础上对目前有机热电材料所面临的关键问题进行阐述和总结。     

High performance Na-doped PbTe-PbS thermoelectric materials: electronic density of states modification and shape-controlled nanostructures

Thermoelectric heat-to-power generation is an attractive option for robust and environmentally friendly renewable energy production. Historically, the performance of thermoelectric materials has been limited by low efficiencies, related to the thermoelectric figure-of-merit ZT. Nanostructuring thermoelectric materials have shown to enhance ZT primarily via increasing phonon scattering, beneficially reducing lattice thermal conductivity. Conversely, density-of-states (DOS) engineering has also enhanced electronic transport properties. However, successfully joining the two approaches has proved elusive. Herein, we report a thermoelectric materials system whereby we can control both nanostructure formations to effectively reduce thermal conductivity, while concurrently modifying the electronic structure to significantly enhance thermoelectric power factor. We report that the thermoelectric system PbTe-PbS 12% doped with 2% Na produces shape-controlled cubic PbS nanostructures, which help reduce lattice thermal conductivity, while altering the solubility of PbS within the PbTe matrix beneficially modifies the DOS that allow for enhancements in thermoelectric power factor. These concomitant and synergistic effects result in a maximum ZT for 2% Na-doped PbTe-PbS 12% of 1.8 at 800 K.     

Chemical bonding and properties of "layered" quaternary antimonide oxide REOZnSb (RE = La, Ce, Pr, Nd)

An efficient route to construct a three-dimensional crystal structure is stacking of two-dimensional building blocks (2D-BBs). The crystal structures of potential thermoelectric compounds REOZnSb (RE = La, Ce, Pr, Nd) were virtually constructed from insulating [REO] and conducting [ZnSb] layers. Further optimizations performed by means of first-principles calculations show that REOZnSb should exhibit semimetal or narrow band-gap semiconductor behaviors, which is a prerequisite for high thermoelectric efficiency. The analysis of the electron localizability indicator for LaOZnSb reveals mostly covalent polar interactions between all four kinds of atoms. The electron density yields completely balanced ionic-like electronic formula La(1.7+)O(1.2-)Zn(0.4+)Sb(0.9-). Furthermore, the samples of REOZnSb have been synthesized via solid-state reaction, and their crystal structures were confirmed by powder X-ray diffraction. The differences in cell parameters between the theoretically optimized and the experimental values are smaller than 2%. The temperature dependence of the magnetic susceptibility shows that LaOZnSb is diamagnetic above 40 K, whereas CeOZnSb, PrOZnSb and NdOZnSb are Curie-Weiss-type paramagnets. Electrical conductivity and Seebeck effect measurements indicate that REOZnSb are p-type semiconductors. A considerably high Seebeck coefficient and low thermal conductivity were obtained for pure LaOZnSb, but its low electrical conductivity leads to a small ZT. The high adjustability of the crystal structure as well as properties by optimization of the chemical composition in the compounds REOZnSb provide good prospects for achieving high thermoelectric efficiency.     

Optoelectronic structure and related transport properties of BiCuSeO-based oxychalcogenides: First principle calculations

Recent experiments have revealed that the p-type BiCuSeO-based oxychalcogenides compounds exhibit a high thermoelectric figures of merit due to their very low lattice thermal conductivities and moderate Seebeck coefficient in the medium temperature range. In the present work, we reported on the optoelectronic and thermoelectric properties using the full potential linear augmented plane wave method and modified Becke-Johnson potential with spin-orbit coupling. The properties show that the BiCuSeO-based oxychalcogenides exhibit a semiconductor behavior with band gap values of 0.51, 0.45 and 0.41 eV for BiCuSO, BiCuSeO, and BiCuTeO, respectively. Due to their prominent role for thermoelectric applications, we combined Boltzmann transport theory to DFT results to compute the transport properties, mainly electronic conductivity, thermal conductivity, Seebeck coefficient and power factor. The present results show the dominance of BiCuTeO for thermoelectric application compared to the BiCuSO and BiCuSeO.     

Solid-solutioned homojunction nanoplates with disordered lattice: a promising approach toward "phonon glass electron crystal" thermoelectric materials

The concept of "phonon glass electron crystal" (PGEC) was proposed in the mid-1990s to maximize the ZT value for thermoelectric materials, based on its combined advantages of low thermal conductivity as in a glass but high electricity as in a well-ordered crystal. Although a great amount of research in complex materials systems for achieving this concept has been done, a perfect "PGEC" material has not been acquired yet. Herein, we first put forward a solid-solutioned homojunction in high temperature phase with disordered lattice, which possesses both high electrical conductivity and low thermal conductivity, as an effective way to optimize the low/mid-temperature thermoelectric property. As an example, nonambient cubic phase AgBiSe(2) was successfully stabilized to room temperature through the formation of a solid solution by Sb incorporation for the first time, and furthermore, in situ formed homojunctions on the surface of solid-solutioned nanoplates were also first achieved through a simple colloidal method. A significant enhancement of thermoelectric performance at low/mid-temperature was realized through synergistical regulation on electronic and thermal transport. As a result, compared to that of original AgBiSe(2) (ZT = 0.03 at 550 K), the ZT value of AgBi(0.5)Sb(0.5)Se(2) was increased to 0.51 at 550 K by the formation of a solid solution, and then further increased to 1.07 at 550 K by the formation of solid-solutioned homojunction.     

HgTe: a potential thermoelectric material in the cinnabar phase

We present the calculations of the electronic structure and transport properties on the zinc-blende (ZB) and cinnabar phases of HgTe using the full-potential linearized augmented plane-wave method and the semiclassical Boltzmann theory. Our results show that n-doped cinnabar HgTe has a significant larger Seebeck coefficient and electrical conductivity along the z axis than those of the n-doped ZB phase. This is mainly attributed to the large structural anisotropy originated from its chainlike bonding characters along the z axis, resulting in the anisotropic energy distribution in the lowest conduction band of cinnabar structure. The resulting ZT values along the z axis of the n-doped cinnabar HgTe are predicted to reach very high values of 0.61 at room temperature and 1.74 at 600 K. Therefore, the current theory suggests that the cinnabar structure of HgTe could be a good thermoelectric material. Future experiments are thus demanded to explore its thermoelectric performance by making use of the high ZT.