Effect of Annealing Temperature on Structural and Optical Properties of N-Doped ZnO Films |
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| Authors: | ZHONG Sheng ZHANG Wei-Ying WU Xiao-Peng LIN Bi-Xia FU Zhu-Xi |
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| Affiliation: | Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Abstract: | Nitrogen-doped ZnO (ZnO:N) films are prepared by thermal oxidation of sputtered Zn3N2 layers on Al2O3 substrates. The correlation between the structural and optical properties of ZnO:N films and annealing temperatures is investigated. X-ray diffraction result demonstrates that the as-sputtered Zn3N2 films are transformed into ZnO:N films after annealing above 600°C. X-ray photoelectron spectroscopy reveals that nitrogen has two chemical states in the ZnO:N films: the NO acceptor and the double donor (N2)O. Due to the No acceptor, the hole concentration in the film annealed at 700°C is predicted to be highest, which is also confirmed by Hall effect measurement. In addition, the temperature dependent photoluminescence spectra allow to calculate the nitrogen acceptor binding energy. |
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| Keywords: | 61 72 Vv 68 49 Uv 71 55 Gs 81 05 Dz 81 15 Cd |
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