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Apparatus for Real—Time Measurement of Stress in Thin Films at Elevated Temperatures
引用本文:安兵,张同俊,袁超,崔崑.Apparatus for Real—Time Measurement of Stress in Thin Films at Elevated Temperatures[J].中国物理快报,2003,20(8):1387-1389.
作者姓名:安兵  张同俊  袁超  崔崑
作者单位:StateKeyLaboratoryofPlasticFormingSimulationandDieandMouldTechnology,HuazhongUniversityofScienceandTechnology,Wuhan430074
摘    要:As a prerequisite of biaxial zero creep experiments, a novel sensitive apparatus is developed for real-time filmstress measurement during thermal cycles. The optical sensor with a fixed multi-beam emitter and a CCD detector is investigated during an annealing process of Ag/Co multilayer thin film. The monitoring plots of stress as functions of temperature and time demonstrate the capability of this set-up. The typical sensitivity for measuring the wafer curvature radius is 2 km.

关 键 词:薄膜测量  实时测量  光学传感器  热循环  温度  CCD  二轴零蠕变实验
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