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Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes
作者姓名:李晓静  赵德刚  江德生  刘宗顺  陈平  吴亮亮  李亮  乐伶聪  杨静  何晓光  王辉  朱建军  张书明  张宝顺  杨辉
作者单位:State
基金项目:Project supported by the National Science Fund for Distinguished Young Scholars,China (Grant No.60925017);the National Natural Science Foundation of China (Grant Nos.10990100,60836003,60976045,and 61176126);the Tsinghua National Laboratory for Information Science and Technology Cross-discipline Foundation
摘    要:The influences of polarization and p-region doping concentration on the photocurrent response of Al0.4Ga0.6N/Al0.4Ga0.6N/Al0.65Ga0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages.The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect,but increases rapidly with the increase of effective doping concentration in p-type region.These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field.A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.

关 键 词:nitride  materials  photodetector  polarization
收稿时间:2013-03-20

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes
Li Xiao-Jing,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Wu Liang-Liang,Li Liang,Le Ling-Cong,Yang Jing,He Xiao-Guang,Wang Hui,Zhu Jian-Jun,Zhang Shu-Ming,Zhang Bao-Shun,Yang Hui.Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes[J].Chinese Physics B,2014,23(2):28503-028503.
Authors:Li Xiao-Jing  Zhao De-Gang  Jiang De-Sheng  Liu Zong-Shun  Chen Ping  Wu Liang-Liang  Li Liang  Le Ling-Cong  Yang Jing  He Xiao-Guang  Wang Hui  Zhu Jian-Jun  Zhang Shu-Ming  Zhang Bao-Shun  Yang Hui
Affiliation:a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Abstract:
Keywords:nitride materials  photodetector  polarization
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