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Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes |
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| Authors: | Li Xiao-Jing Zhao De-Gang Jiang De-Sheng Liu Zong-Shun Chen Ping Wu Liang-Liang Li Liang Le Ling-Cong Yang Jing He Xiao-Guang Wang Hui Zhu Jian-Jun Zhang Shu-Ming Zhang Bao-Shun Yang Hui |
| Affiliation: | a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China |
| Abstract: | The influences of polarization and p-region doping concentration on the photocurrent response of Al0.4Ga0.6N/Al0.4Ga0.6N/Al0.65Ga0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages. The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect, but increases rapidly with the increase of effective doping concentration in p-type region. These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field. A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field. |
| Keywords: | nitride materials photodetector polarization |
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