| GaN基p-i-n型雪崩探测器的制备与表征 |
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| 引用本文： | 李广如,秦志新,桑立雯,沈波,张国义.GaN基p-i-n型雪崩探测器的制备与表征[J].发光学报,2011,32(3):262-265. |
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| 作者姓名： | 李广如 秦志新 桑立雯 沈波 张国义 |
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| 作者单位： | 北京大学物理学院人工微结构和介观物理国家重点实验室; |
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| 基金项目： | Projects supported by National Natural Science Foundation of China Grant(10774001,60736033,60876041,60577030)~~ |
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| 摘 要： | 制备和表征了p-i-n型的GaN基雪崩探测器.器件在-5V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA.响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量.C-V测量用来确定载流子的分布和耗尽信息,结果显示,P型层在15 ...
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| 关 键 词： | 紫外探测器 雪崩 碰撞电离 |
Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors |
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| LI Guang-ru,QIN Zhi-xin,SANG Li-wen,SHEN Bo,ZHANG Guo-yi.Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors[J].Chinese Journal of Luminescence,2011,32(3):262-265. |
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| Authors: | LI Guang-ru QIN Zhi-xin SANG Li-wen SHEN Bo ZHANG Guo-yi |
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| Affiliation: | LI Guang-ru,QIN Zhi-xin*,SANG Li-wen,SHEN Bo,ZHANG Guo-yi (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China) |
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| Abstract: | p-i-n GaN based avalanche UV photodetectors were fabricated and characterized.Dark current of the device is as low as 0.05 nA at the reverse bias of 5 V and <0.5 nA at 20 V.Repeatable photocurrent avalanche gain,began at around 80 V and grew up to a peak of 120 at about 85 V,demonstrating a good material quality.C-V mea-surement was used to determine carrier distribution and depletion information,and it showed that p-layer fully depleted at reverse bias of about 15 V,resulting in a hole concentration of 1.9... |
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| Keywords: | UV photodetector avalanche impact ionization |
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