| MOCVD生长的InGaN薄膜中InN分凝的研究 |
| |
| 引用本文： | 秦志新,陈志忠,童玉珍,陆曙,张国义.MOCVD生长的InGaN薄膜中InN分凝的研究[J].发光学报,2001,22(Z1):43-47. |
| |
| 作者姓名： | 秦志新 陈志忠 童玉珍 陆曙 张国义 |
| |
| 作者单位： | 北京大学物理系, |
| |
| 基金项目： | 国家自然科学基金，69876002， |
| |
| 摘 要： | 利用X射线衍射(XRD)技术测量了MOCVD生长的InGaN薄膜中的InN分凝量.利用Vegard定理和XRD 2θ扫描测得实验的InGaN薄膜的In组分为0.1～0.34.通过测量XRD摇摆曲线的InN(0002)和InGaN(0002)的积分强度之比测得InN在InGaN中的含量为0.0684%～2.6396%.根据XRD理论,计算出InN和InGaN的理论衍射强度.InN含量在所有样品中均小于3%,这表明样品的相分离度比较低.还发现InN在InGaN薄膜中的含量与氮气载气流量和反应室气压明显相关.
|
| 关 键 词： | InGaN InN分凝 MOCVD |
| 文章编号： | 1000-7032(2001)增-0043-05 |
| 修稿时间： | 2001年3月17日 |
InN Segregation in InGaN Layers Grownby Metalorganic Chemical Vapor Deposition |
| |
| QIN Zhixin,Chen Zhizhong,TONG Yuzhen,LU Shu,ZHANG Guoyi.InN Segregation in InGaN Layers Grownby Metalorganic Chemical Vapor Deposition[J].Chinese Journal of Luminescence,2001,22(Z1):43-47. |
| |
| Authors: | QIN Zhixin Chen Zhizhong TONG Yuzhen LU Shu ZHANG Guoyi |
| |
| Abstract: | The amount of InN segregated in InGaN films grown by MOCVD was estimated by Xray diffraction measurement technology. In compositions in the InGaN films are measured as 0.1 ～0.34 by X-ray 2θ scan using Vegard's law. The inclusion of InN in InGaN layers was obtained as 0.068 4 % ～2. 639 6% by measuring the ratio of the integrated intensities of InN (0002) peak to that of InGaN (0002) peak in X-ray rocking curves. The theoretical diffraction intensities from InN and InGaN have been calculated according to the X-ray diffraction theory. The values of InN inclusion for all the samples were less than 3 %, which indicate that degree of phase separation of the samples was low. It was also found that the flow rate of N2 carrier gas and operation pressure strongly affect the InN inclusion in InGaN. |
| |
| Keywords: | |
| 本文献已被 万方数据 等数据库收录！ |
|
