Determination of electron temperature based on a semicoronal model in Hall accelerator plasma flows

We present the results of a spectroscopic study of a nonequilibrium plasma in a Hall accelerator, in particular for such an important parameter as the electron temperature. For the studied conditions, we used the semicoronal equilibrium model, which relates the intensity ratios for two successive ionization steps for the same element. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 93–96, January–February, 2007.     

Ionic conductivity of epitactic MBE-grown BaF2 films

We studied parallel conductivities of pure BaF₂ films with thicknesses ranging from 35 to 300 nm, epitaxially grown on Al₂O₃(0 1 2) substrates by molecular beam epitaxy technique. The overall conductivities of the films are found to increase with decreasing thickness. The detailed investigation of the overall conductance as a function of the thickness permits the deconvolution of bulk and boundary effects, the latter being attributed to distinct space charge effects in the interface between BaF₂ film and Al₂O₃ substrate. The (extrinsic) Debye length (λ) is estimated to be about 8 nm at T=593 K, which corresponds to an impurity content of 10¹⁸/cm³ (singly ionized dopant assumed). This is consistent with the fact that we observed a constant boundary contribution for all investigated films (film thickness >4λ). It is also consistent with the Debye length observed in a previous report on CaF₂/BaF₂ heterolayers fabricated by the same technique, in which the low temperature enhancement was also attributed to space charges in BaF₂ [Nature 408 (2000) 946]. Only at low temperatures (below 370 °C), the conductance seems to be influenced by strain effect.     

Effect of the incomplete accommodation of the heterogeneous recombination energy on heat fluxes to a quartz surface

Taking both the heterogeneous catalytic processes, including the surface formation of particles with excited internal degrees of freedom, and the processes of multicomponent diffusion and heat transfer in the MESOX apparatus fully into account makes it possible to obtain a recombination coefficient and an accommodation coefficient of the oxygen-atoms-on-quartz recombination energy which are in good agreement with the experimental data. The heterogeneous catalysis model constructed can be used effectively for predicting the heat fluxes to the surface of reentry vehicles on their entry into the Earth’s atmosphere.     

类锂铝复合机制产生X光激光的等离子体状态

本文从速率方程出发,讨论了类锂铝复合等离子体的激发态结构,衰减常数,反转率和小信号增益等表征介质增益特性的物理量以及它们随电子温度,电子密度和光子逃逸几率的变化。找到了进行类锂铝离子通过复合机制产生X光激光设计应创造的等离子体状态目标区域。还讨论了这些物理量随原子序数变化的定标律。     

Effect of a thermal radiation field on the γ-luminescence of alkali-silicate glass

We revealed the changes in the γ-luminescence spectra under the influence of a thermal radiation field on high-purity alkali-silicate glasses (I) and those with addition of Fe³⁺ ions (II). We explain the obtained results within the framework of the L-model of edge absorption and electron-hole recombination processes. Samarkand State University, 15, Universitetskii Bul., Samarkand, 703004, Republic of Uzbekistan. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 453–455, May–June, 1998.     

Surface recombination in breakdown time delay experiments: Effect of different cathode materials

The late afterglow in nitrogen with iron electrode is studied by the breakdown time delay method, i.e., by measuring the breakdown time delay t_d as a function of the afterglow time . It is proposed that the cause of the secondary electrons initiating the breakdown is the energy of the surface recombination of nitrogen atoms on the iron electrode. The gas-phase and macrokinetic diffusive models are used to describe the experimental breakdown time delay data. By fitting the theoretical curve to the experimental data: (1) it has been confirmed that the recombination on the molybdenum glass is of the second order and the value of the surface recombination coefficient is determined at 4 mbar; (2) it has been shown that the surface recombination on the iron electrode is of the second order, and the effective recombination coefficients are determined; (3) the analytical form of the recombination coefficient as a function of the adsorption characteristics of surfaces and the pressure of the parent gas has been derived. In addition, the orders of surface recombination on the molybdenum-, aluminum-, and gold-plated electrode were determined by the same method.     

Monte—Carlo model of the diffusion-limited reaction kinetics in microheterogeneous media. Comparison with the experimental plots of the forward and backward electron phototransfer kinetics on the pore diameter in silica gel

The kinetics of the diffusion-limited decay reaction A + B B was simulated by the Monte—Carlo method on a two-dimensional square lattice with defects presented by randomly distributed sites. The cases were considered where [B] [A] at the random initial distribution (quenching reaction) and [B] = [A] with the initial distribution of the A and B particles on neighboring sites (geminate recombination). The kinetic curves were approximated by the simplest analytical equation [A]/[A]₀ = (1 – )exp[–(kt)^1–h ] + (where k and are constants). The plots of the heterogeneity parameter (h) and time-averaged first-order rate constant vs. concentration of defects (p) or B particles (in the case of quenching) were obtained and compared with similar correlations obtained earlier by the experimental study of the kinetics of forward (quenching reaction) and backward (geminate recombination) electron phototransfer on the surface of different porous silica gels. The experimental plots of h vs. silica gel porosity are in satisfactory agreement with the plots of h vs. p in the model space, if the fraction of volume inaccessible for reactants, calculated from the free silica gel volume, is chosen as the p parameter for silica gel.Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 8, pp. 1536–1541, August, 2004.     

高纯硅中补偿性杂质的光热电离光谱

首先测量了高纯n型硅样品在接近液氦温度区域内随温度变化的光热电离光谱，确定了硅样品的最佳光热电离温度范围. 在该温度范围内，在有本征带隙光照射条件下，测量了样品的高分辨率光热电离光谱，同时观察到了来自主要浅杂质施主磷以及补偿性杂质硼的正信号. 随后，应用外加磁场，对硼的光热电离光谱进行了研究，发现来自硼的光热电离信号，在外加磁场作用下，发生了由正向负信号的转变. 通过对该现象进行分析讨论，排除了该现象是温度效应的可能，指出普遍用来解释补偿性杂质光热电离响应的Darken模型存在不足，而少数载流子快速复合模     

Size-dependent optical properties and carriers dynamics in CdSe/ZnS quantum dots

Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots （QDs） were investigated by two-colour femtosecond （fs） pump-probe （400/800 nm） and picosecond time-resolved photoluminescence （ps TRPL） experiments. Pump-probe measurement results show that there are two components for the excited carriers relaxation, the fast one with a time constant of several ps arises from the Auger-type recombination, which shows almost particle sizeindependence. The slow relaxation component with a time constant of several decades of ns can be clearly determined with ps TRPL spectroscopy in which the slow relaxation process shows strong particle size-dependence. The decay time constants increase from 21 to 34 ns with the decrease of particle size from 3.2 to 2.1 nm. The room-temperature decay lifetime is due to the thermal mixing of bright and dark excitons, and the size-dependence of slow relaxation process can be explained very well in terms of simple three-level model.     

有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性，采用刚体模型处理有机层界面问题是不恰当的，而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中，当所加电压小于19.5V时，复合效率随着载流子跳跃距离的增加而增加，而大于19.5V时，复合效率随着其距离的增加而减少；复合效率随着有机层界面有效势垒高度的增加而增加； 关键词： 有机层界面 双层有机发光二极管 复合效率 有效势垒高度 无序跳跃模型