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针对电可擦除编程存储器(EEPROM)存储单元的读出电流需要被精确检测的问题,该文提出了一种对EEP-ROM存储单元进行工作电流检测的电路,该电路主要用电流镜来搭建,和读出电路中的灵敏放大器相连。在检测时用电流镜电路把灵放的读出电流镜像到电流检测的输出端。模拟结果显示,用这种检测电路来检测读出电流可以取得较高的精度(98.5%)。同时,电路本身结构简单,在实际中易实现。 相似文献
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation 下载免费PDF全文
The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. 相似文献
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对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT), 在不同辐照剂量率下进行60Co γ射线的辐照效应与退火特性的研究. 测量结果表明, 两种辐照剂量率下, 随着辐照总剂量增加, 晶体管基极电流增大, 共发射极电流放大倍数降低, 且器件的辐照损伤、性能退化与辐照剂量率相关, 低剂量率下辐照损伤较高剂量率严重. 在经过与低剂量率辐照等时的退火后, 高剂量率下的辐照损伤仍较低剂量率下的损伤低, 即待测SiGeHBT具有明显的低剂量率损伤增强效应(ELDRS). 本文对相关的物理机理进行了探讨分析.
关键词:
锗硅异质结双极晶体管
低剂量率辐照损伤增强
辐照效应 相似文献
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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor 下载免费PDF全文
A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse. 相似文献
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Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition 总被引:1,自引:0,他引:1
The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dis- location density. 相似文献
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Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model 下载免费PDF全文
In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1 × 0.2 × 16 μm~2 SiGe HBT over a wide temperature range(from 218 K to 473 K), and good matching is obtained between the extracted and modeled results. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range. 相似文献
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