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1.
A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device. 相似文献
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分析了Γ分布密度函数的性质,指出了该密度函数与相应参数之间的关系.主要研究第二个参数对密度的影响,证明了β增大时Γ(α,β)分布密度极大值也增大,还指出了β变化时Γ(α,β)分布密度与另一特定密度曲线交点的变化规律. 相似文献
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Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction 下载免费PDF全文
Effective spin-polarized injection from magnetic semiconductor (MS)
to nonmagnetic semiconductor (NMS) has been highlighted in recent
years. In this paper we study theoretically the dependence of
nonequilibrium spin polarization (NESP) in NMS during spin-polarized
injection through the magnetic p-n junction. Based on the theory in
semiconductor physics, a model is established and the boundary
conditions are determined in the case of no external spin-polarized
injection and low bias. The control parameters that may influence the
NESP in NMS are indicated by calculating the distribution of spin
polarization. They are the doping concentrations, the equilibrium
spin polarization in MS and the bias. The effective spin-polarized
injection can be realized more easily by optimizing the above
parameters. 相似文献
4.
The ruggedness of a superjunction metal–oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET. 相似文献
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Symmetry ensemble theory of spin wave emitting effectdriven by current in nanoscale magnetic multilayer 下载免费PDF全文
<正>This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves,in which individual spin moments in the free layer are considered as subsystems to form a spinor ensemble.The magnetization dynamics equation of the ensemble was developed.By analytically investigating the equation,many magnetization dynamics properties excited by polarized current reported in experiments,such as double spin wave modes and the abrupt frequency jump,can be successfully explained.It is pointed out that an external field is not necessary for spin wave emitting(SWE) and a novel perpendicular configuration structure can provide much higher SWE efficiency in zero magnetic field. 相似文献
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给出了随机环境中马氏链状态必然是弱常返或强暂留的几个充分条件,引入了状态周期的概念,得到类似于经典马氏链状态周期的几个性质.引入了随机环境中马氏链状态的几个数字特征,给出了随机环境中马氏链状态是弱常返与强常返等价的充分条件,利用这一条件可以说明相关文献所出现的错误结论. 相似文献
9.
铈激活的钇铝石榴石(YAG:Ce)由高温固相反应制备.样品证明为纯的的石榴石物相.YAG:Ce的激发光谱为双峰结构,主要激发峰在460nm,与GaN的蓝光发射匹配.YAG:Ce的发射光谱为一宽带,波长范围从蓝绿到红,主峰波长为540nm,能与GaN的蓝光组合形成高亮度白光.YAG:Ce在漫反射光谱中的的两个吸收峰与YAG:Ce的激发峰相吻合,进一步证明了铈激活的YAG对GaN蓝光的有效吸收.YAG:Ce有很高的发光强度和高达89%的量子效率. 相似文献
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任敏 《浙江大学学报(理学版)》2022,49(1):53-59
给出了独立随机环境中受传染性疾病影响的分枝过程 的模型,讨论了该模型的极限性质,并给出了分枝过程经 和 规范化后 和 几乎处处收敛和 收敛的充分条件,得到 收敛的充分条件和 极限非退化到0的充分条件和必要条件。 相似文献