Effect of Bias Voltage on Microstructure and Mechanical Properties of Nanocomposite ZrCN Films Deposited by Filtered Cathodic Vacuum Arc

Nanocomposite ZrCN films consisting of nanocrystalline ZrCN grains embedded in nitrogen-doped amorphous carbon film are deposited by filtered cathodic vacuum arc technology under different bias voltages ranging from 50to 400 V.The influence of bias voltage on the characterization and the mechanical properties of the ZrCN films are investigated by x-ray diffraction,x-ray photoelectron spectroscopy,scanning electron microscopy,transmission electron microscopy,Raman spectroscopy and nano-indentation.The bias voltage has a subtle effect on the ZrCN grain size,which is around 9.5 nm and keeps almost constant.A slight increase of the bias voltage induces a relatively high sp~3 fraction about 40%in N-doped amorphous C films but leads to the graphitization of the films under a higher voltage.The best mechanical property of the ZrCN film with the hardness of 41 GPa is obtained under the bias voltage of 200 V,indicating the positive effect of slight increase of ion bombardment on the hardness of the films.     

线性缀加平面波法计算掺杂钨和钒锐钛矿二氧化钛的电子结构

利用基于密度泛函理论的线性缀加平面波(LAPW)法, 计算未掺杂和掺杂钨和钒的锐钛矿TiO₂晶体的能带和电子态密度. 计算结果表明, 钨和钒的掺杂能够使锐钛矿TiO₂的能带明显变窄.     

高功率脉冲磁控溅射技术制备掺氮类金刚石薄膜的磨蚀性能

掺氮类金刚石薄膜在生物应用中很有前景,研究其摩擦和腐蚀的协同作用有很大的实际意义.论文使用高功率脉冲磁控溅射(high-power impulse magnetron sputtering,HiPIMS)技术,在奥氏体不锈钢和单晶硅片上以Ar气和氮气为前驱气体,室温下制备了致密的掺氮类金刚石薄膜.使用配备三电极电化学池的往复型摩擦磨损试验机,在Hank’s平衡盐溶液中研究了不同靶脉冲持续时间制备的薄膜的摩擦腐蚀性能,并在滑动之前、期间和之后监测了薄膜的开路电位(open circuit potential,OCP).电化学工作站用于表征摩擦前薄膜的电化学行为.结果表明:60μs制备的掺氮类金刚石薄膜展示了优异的耐磨蚀性能,其摩擦系数最低(0.05)且在摩擦阶段OCP显示了最高的稳定值(39 mV),这主要归功于其致密的结构和较大的表面能;而90μs下制备的薄膜由于可以形成交联结构的sp³键含量明显下降,从而导致薄膜孔隙率增加,薄膜的抗腐蚀性下降,在磨蚀过程中由于电解液在孔隙的腐蚀使得薄膜/基体的界面结合强度减弱,在摩擦的综合作用下,薄膜脱落,发生失效.     

不同离子辐照氟化锂材料时原位发光光谱测量分析

在BNU400注入机上搭建的离子激发发光(ion beam induced luminescence,IBIL)测量装置上,开展了相同能量(100 keV)条件下的3种离子(H⁺、He⁺以及O⁺)辐照氟化锂材料时的IBIL光谱的原位测量工作,对比研究离子种类对氟化锂材料辐照缺陷的生成及其演变行为的影响.结合SRIM(Stopping and Range of Ions in Matter)模拟的结果,可以发现He⁺辐照时的IBIL光谱强度最高,这是由于He⁺激发产生的电子空穴对密度高于H⁺,而O⁺辐照时由于激发出的电子空穴对密度过高引起的非辐射复合比例增加,从而导致发光效率过低;质量数越大的离子辐照时,核阻止本领越大,会加快缺陷的生成和湮灭速率,降低达到平衡状态时的发光强度.近红外波段的F₃^-/F₂⁺色心发光峰强度及其演变行为表明其耐辐照性能好于可...     

Developing cold-resistant high-adhesive electronic substrate for WIMPs detectors at CDEX

Herein we report a prototypical electronic substrate specifically designed to serve the weakly interacting massive particles(WIMPs)detectors at the China Dark Matter Experiment(CDEX).Because the bulky high-purity germanium(HPGe)detectors operate under liquid-nitrogen temperatures and ultralow radiation backgrounds,the desired electronic substrates must maintain high adhesivity across different layers in such cold environment and be free from any radioactive nuclides.To conquer these challenges,for the first time,we employed polytetrafluoroethylene((C2F4)n)foil as the base substrate,in conjunction with ion implantation and deposition techniques using an independently developed device at Beijing Normal University for surface modification prior to electroplating.The remarkable peeling strengths of 0.88±0.06 N/mm for as-prepared sample and 0.75±0.05 N/mm for that after 2.5-days of soaking inside the liquid nitrogen were observed,while the regular standards commonly require 0.4 N/mm^0.6 N/mm for electronic substrates.     

Thermal desorption characteristic of helium ion irradiated nickel-base alloy

The nickel-base alloy is one of the leading candidate materials for generation IV nuclear reactor pressure vessel.To evaluate its stability of helium damage and retention,helium ions with different energy of 80 keV and 180 keV were introduced by ion implantation to a certain dose(peak displacement damage 1-10 dpa).Then thermal desorption spectroscopy(TDS)of helium atoms was performed to discuss the helium desorption characteristic and trapping sites.The desorption peaks shift to a lower temperature with increasing dpa for both 80 keV and 180 keV irradiation,reflecting the reduced diffusion activation energy and faster diffusion within the alloy.The main release peak temperature of 180 keV helium injection is relatively higher than that of 80 keV at the same influence,which is because the irradiation damage of 180 keV,helium formation and entrapment occur deeper.The broadening of the spectra corresponds to different helium trapping sites(He-vacancies,grain boundary)and desorption mechanisms(different Hen Vm size).The helium retention amount of 80 keV is lower than that of 180 keV,and a saturation limit associated with the irradiation of 80 keV has been reached.The relatively low helium retention proves the better resistance to helium bubbles formation and helium brittleness.     

Experimental and computational study of visible light-induced photocatalytic ability of nitrogen ions-implanted TiO_2 nanotubes

Nitrogen-doped TiO2 nanotubes(TNTs)were prepared by ion implantation and anodic oxidation.The prepared samples were applied in photocatalytic(PC)oxidation of methyl blue,rhodamine B,and bisphenol A under light irradiation.To explore the influence of doped ions on the band and electronic structure of TiO2,computer simulations were performed using the VASP code implementing spin-polarized density functional theory(DFT).Both substitutional and interstitial nitrogen atoms were considered.The experimental and computational results propose that the electronic structure of TiO2 was modified because of the emergence of impurity states in the band gap by introducing nitrogen into the lattice,leading to the absorption of visible light.The synergy effects of tubular structures and doped nitrogen ions were responsible for highly efficient and stable PC activities induced by visible and ultraviolet(UV)light.     

认知性VDT持续监控作业人因可靠性动态预测方法

结合N-back任务范式和持续操作测试(CPT)任务范式,设计出模拟认知性VDT持续监控作业的实验.根据实验数据:分别对脑力负荷评估指标体系中的6个评估指标在20个作业时间段的均值进行方差分析,差异显著;训练非线性自回归神经网络模型(NAR),对不同作业时间段脑力负荷在评估指标上发生的变化进行动态预测;再结合认知性VDT持续监控作业人因可靠性评估模型对人因可靠性概率进行预测.研究结果表明:该方法可动态预测不同时间段作业者的人因可靠性,实现认知性VDT持续监控作业任务的动态分配,提高系统可靠性.     

In situ luminescence measurement of 6H-SiC at low temperature

To understand the evolution of defects in SiC during irradiation and the influence of temperature,in situ luminescence measurements of 6H-SiC crystal samples were carried out by ion beam induced luminescence(IBIL)measurement under2 MeV H^+ at 100 K,150 K,200 K,250 K,and 300 K.A wide band(400-1000 nm)was found in the spectra at all temperatures,and the intensity of the IBIL spectra was highest at 150 K among the five temperatures.A small peak from 400 nm to 500 nm was only observed at 100 K,related with the D1 defect as a donor-acceptor pair(D-A)recombination.For further understanding the luminescent centers and their evolution,the orange band(1.79 eV)and the green band(2.14 eV)in the energy spectrum were analyzed by Gaussian decomposition,maybe due to the donor-deep defect/conduction band-deep defect transitions and Ti related bound excition,respectively.Finally,a single exponential fit showed that when the temperature exceeded 150 K,the two luminescence centers’resistance to radiation was reduced.     

Preparation and Photocurrent Performance of Highly Ordered Titania Nanotube Implanted with Ag/Cu Metal Ions

Ag/Cu-doped titania nanotubes （Ag/TiNT, Cu/TiNT） are prepared by a metal vapor vacuum arc implanter. A scanning electronic microscope is employed for microstruetural characterization. The photo-current performance of doped titania nanotubes under UV and visible light is tested by an electrochemical workstation CS300UA, the results show that the absorption edge of both Ag/TiNT and Cu/TiNT samples shifts to the visible light region and the band gap becomes narrower. Ag/TiNT possesses better photo-current ability than Cu/TiNT under UV and visible light. Titania doped with Ag and Cu metal ions is also studied based on the linearized augmented planewave method implemented by WIEN2k package, the result becomes better with the experimental performance.