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991.
Daniel K. L. Oi Alex Ling James A. Grieve Thomas Jennewein Aline N. Dinkelaker Markus Krutzik 《Contemporary Physics》2017,58(1):25-52
Bringing quantum science and technology to the space frontier offers exciting prospects for both fundamental physics and applications such as long-range secure communication and space-borne quantum probes for inertial sensing with enhanced accuracy and sensitivity. But despite important terrestrial pathfinding precursors on common microgravity platforms and promising proposals to exploit the significant advantages of space quantum missions, large-scale quantum test beds in space are yet to be realised due to the high costs and lead times of traditional ‘Big Space’ satellite development. But the ‘small space’ revolution, spearheaded by the rise of nanosatellites such as CubeSats, is an opportunity to greatly accelerate the progress of quantum space missions by providing easy and affordable access to space and encouraging agile development. We review space quantum science and technology, CubeSats and their rapidly developing capabilities and how they can be used to advance quantum satellite systems. 相似文献
992.
993.
For decades the research on thin-film growth has attracted considerable attention as these kinds of materials have the potential for a new generation of device application. It is known that the nuclei at the initial stage of the islands are more stable than others and certain atoms are inert while others are active. In this paper, by using kinetic Monte Carlo simulations, we will show that, when a surfactant layer is used to mediate the growth, a counter-intuitive fractal-to-compact island shape transition can be induced by increasing deposition flux or decreasing growth temperature. Specifically, we introduce a reaction-limited aggregation (RLA) theory, where the physical process controlling the island shape transition is the shielding effect of adatoms stuck to the stable islands on the incoming adatoms. Moreover, the origin of a transition from triangular to hexagonal and then to inverted triangular as well as the decay characteristics of three-dimensional islands on the surface and relations of our unique predictions with recent experiments will be discussed. Furthermore, we will present a novel idea to make use of the condensation energy of adatoms to control the island evolution along a special direction. 相似文献
994.
Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor 下载免费PDF全文
This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage(BV) for an ultra-high-voltage(UHV) high-side thin layer silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state(on-state) BV of the SOI p-channel LDMOS can reach 741(620) V in the 3-μm-thick buried oxide layer,50-μm-length drift region,and at 400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit. 相似文献
995.
996.
M. Y. Xia G. H. Zhang G. L. Dai C. H. Chan 《计算数学(英文版)》2007,25(3):374-384
This paper is concerned with stable solutions of time domain integral equation (TDIE) methods for transient scattering problems with 3D conducting objects. We use the quadratic B-spline function as temporal basis functions, which permits both the induced currents and induced charges to be properly approximated in terms of completeness. Because the B-spline function has the least support width among all polynomial basis functions of the same order, the resulting system matrices seem to be the sparsest. The TDIE formula-tions using induced electric polarizations as unknown function are adopted and justified. Numerical results demonstrate that the proposed approach is accurate and efficient, and no late-time instability is observed. 相似文献
997.
有限元计算中疏密网格过渡方法研究 总被引:1,自引:0,他引:1
工程计算中出于节省计算量的目的,往往需要在一个有限元模型中布置粗细不同的网格。为保证计算结果的准确性,必须保证网格突变情况下的位移协调问题。本文工作之一是在强天驰界面过渡单元的基础上,引入虚拟节点和子单元,在子单元中应用节理元思想,提出了基于最小势能原理的弹簧节理单元法。简化了积分运算,避免了精度要求极高的坐标转换,从而提高了方法的精度和实用性;二是提出了基于位移约束的主从自由度法,简便实用,只需简单的矩阵运算即可实现。两种方法均实现了不同尺寸网格间位移的协调性和刚度的匹配,从而使之满足有限元收敛准则,且生成的刚度阵具有对称性及带状性。算例证明两种方法精度良好,并可方便地应用于求解大规模工程问题。 相似文献
998.
热传导方程的一类无网格方法 总被引:1,自引:0,他引:1
构造求解热传导方程的一类无网格方法,只要选择好每个节点的适当的邻点集合,便可利用节点信息顺利进行计算.作为特殊情形,也可在各种结构或非结构网格上进行计算.在矩形或均匀平行四边形网格上进行计算时具有二阶精度,当在任意的不规则四边形或三角形网格上计算时仍然是守恒的和相容的,且至少具有一阶精度.作为数值试验,将该方法用于在不规则四边形网格上及四边形与三角形混合网格上求解二维非线性抛物型方程,并在不规则四边形网格上求解二维三温辐射热传导方程,均获得了较为理想的数值结果. 相似文献
999.
Kwang‐Seong Choi Haksun Lee Hyun‐Cheol Bae Yong‐Sung Eom Jin Ho Lee 《ETRI Journal》2015,37(2):387-394
A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than 150°C. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than 150°C. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip‐chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a 20 μm pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at 130°C. 相似文献
1000.