Design of edge termination for GaN power Schottky diodes

The GaN Schottky diodes capable of operating in the 300–700-V range with low turn-on voltage (0.7 V) and forward conduction currents of at least 10 A at 1.4 V (with corresponding forward current density of 500 A/cm²) are attractive for applications ranging from power distribution in electric/hybrid electric vehicles to power management in spacecraft and geothermal, deep-well drilling telemetry. A key requirement is the need for edge-termination design to prevent premature breakdown because of field crowding at the edge of the depletion region. We describe the simulation of structures incorporating various kinds of edge termination, including dielectric overlap and ion-implanted guard rings. Dielectric overlap using 5-μm termination of 0.1–0.2-μm-thick SiO₂ increases the breakdown voltage of quasi-vertical diodes with 3-μm GaN epi thickness by a factor of ∼2.7. The use of even one p-type guard ring produces about the same benefit as the optimized dielectric overlap termination.     

μs级充电时水介质同轴电容击穿实验研究

 研制了水介质同轴电容的实验装置，在此装置上进行了大量的实验。测得μs级充电时，水介质同轴电容分别在正脉冲和负脉冲充电时的击穿电压，负击穿电压的理论值与测量值相差较大，正击穿电压的理论值大于测量值的18%左右，对此实验结果进行了分析。此外，当去离子水的电阻率从13MΩ·cm降到5 MΩ·cm时，水介质同轴电容器的击穿电压基本不变。     

激光声源特性研究及海洋应用

激光声作为水下声源的一种新的激发方法,具有高声强、窄脉冲、宽频谱等优点。基于激光声激发的线性及非线性理论,建立了激光声信号特性的初步模型,研究了激光在水中激发声波的特性,研究表明：在热膨胀激发状态,增大激光光强可以提高激光声的转换效率;光强大于击穿阈值后,激光声的激发机制为非线性的光击穿机制。激光声具有的高距离分辨能力和海洋抗干扰能力,对水下目标探测、空载平台等领域有着较广的应用前景。     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

激光诱导水垢等离子体温度精确求解研究

为了减小谱线自发辐射跃迁几率等参量的不确定性带来的计算误差,采用一种改进型的迭代Boltzmann算法研究了激光诱导水垢等离子体的电子温度,经过12次迭代,线性相关系数由0.7687提高到0.99991,得到水垢等离子体的电子温度为5012K。Lorentz函数拟合Ca Ⅱ 393.37nm得到水垢等离子体的电子密度是5.7×1016cm-3,远高于临界值6.4×1015cm-3,证明激光诱导水垢等离子体满足局部热力学平衡模型。结果表明,本方法不仅操作简单,而且可以明显提高等离子体特征参量的求解精度。     

一种新的梳状基区RF功率晶体管

给出一种新的 RF功率器件结构 -梳状基区结构 .在不增加本征集电结面积的情况下 ,该结构能显著改善 RF功率晶体管散热特性 ,增大器件的耗散功率和输出功率 ,较好地缓解了传统结构中高工作频率与大输出功率之间的矛盾 .模拟分析表明 ,采用该结构 ,器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ,器件的大电流特性和频率特性也有所改进 .采用该技术制作的试验样管 DCT375同传统结构器件相比 ,其热电特性得到显著的改善 .这种结构为新型超高频、微波大功率管的研制开辟了新途径 .     

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage(BV) for an ultra-high-voltage(UHV) high-side thin layer silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state(on-state) BV of the SOI p-channel LDMOS can reach 741(620) V in the 3-μm-thick buried oxide layer,50-μm-length drift region,and at 400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit.     

液体中光击穿所激发声场的理论研究

以液体中光击穿所激发声场为研究对象,在等离子体椭球模型的基础上,为方便理论计算,简化等离子体椭球模型,提出了等离子体椭圆盘模型,对光击穿所激发声场进行了理论研究.得到了等离子体椭圆盘辐射声场的声压规律,并利用椭圆坐标变换,依据马修函数特性和模态的正交性,求得了等离子体椭圆盘振动位移的解析表达式.     

激光激发水中产生超声波的实验研究

采用压电陶瓷水听器研究了Nd：YAG脉冲激光激发水中产生瞬态超声波的特性,给出了声压信号随距离的变化关系。研究结果表明：用激光产生水下声波是完全可行的。当观测点与光击穿区的距离r远大于柱体长度时,垂直于光传播方向的激光瞬态超声波幅值与r成反比;当观测点与光击穿区的距离r很小时,垂直于光传播方向的声压幅值与产成反比。此外,当激光入射角度发生变化,超声脉冲的幅值也随之发生变化,其幅值在激光束垂直入射的时候最大。     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.