Spin thermoelectricity in dualhydrogenated zigzag silicene nanoribbons with surface adsorptions

The buckled structure of silicene provides a feasible pathway to influence its electric and magnetic properties via surface adsorptions. Here, we investigate the magnetic and spin thermoelectric transport properties of dual-hydrogenated zigzag silicene nanoribbons (ZSiNRs) without/with the hydrogen adsorption. The band gaps for two spin channels in ZSiNRs under the hydrogen adsorption are shifted near the Fermi level, leading to the appearance of spin Seebeck effect. Using a temperature difference, one can derive the carriers with the different spin index to flow in the opposite direction. Moreover, a large rectification ratio close to 10⁵ at room temperature is achieved for the spin current, and the charge current exhibits a remarkable negative differential thermoelectric resistance (NDTR) behavior. The results presented here are fascinating potential applications in the fields of silicon-based spin caloritronic devices.     

Controlling ionic current through a nanopore by tuning pH: a local equilibrium Monte Carlo study

ABSTRACT

The purpose of this work is to create a model of a nanofluidic transistor which is able to mimic the effects of pH on nanopore conductance. The pH of the electrolyte is an experimentally controllable parameter through which the charge pattern can be tuned: pH affects the ratio of the protonated/deprotonated forms of the functional groups anchored to the surface of the nanopore (for example, amino and carboxyl groups). Thus, the behaviour of the bipolar transistor changes as it becomes ion selective in acidic/basic environments. We relate the surface charge to pH and perform particle simulations (Local Equilibrium Monte Carlo) with different nanopore geometries (cylindrical and double conical). The simulations form a self consistent system with the Nernst–Planck equation with which we compute ionic flux. We discuss the mechanism behind pH-control of ionic current: formation of depletion zones.     

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻. 关键词： AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管     

Perspectives on spin hydrodynamics in ferromagnetic materials

The field of spin hydrodynamics aims to describe magnetization dynamics from a fluid perspective. For ferromagnetic materials, there is an exact mapping between the Landau-Lifshitz equation and a set of dispersive hydrodynamic equations. This analogy provides ample opportunities to explore novel magnetization dynamics and magnetization states that can lead to potential applications that rely entirely on magnetic materials, for example, long-distance transport of information. This article provides an overview of the theoretical foundations of spin hydrodynamics and their physical interpretation in the context of spin transport. We discuss other proposed applications for spin hydrodynamics as well as our view on challenges and future research directions.     

The observation of inherent spin Seebeck effect in Rh/YIG hybrid structure

Rhodium (Rh) is a 4d metal possessing a large spin orbit coupling strength and spin-Hall conductivity with a very small magnetic susceptibility, implying an insignificant magnetic proximity effect (MPE). We report here the observation of longitudinal spin Seebeck effect (LSSE) using Rh as a normal metal. A Rh film was sputtered on nanometer thick YIG films of highly crystalline nature and extremely low magnetic damping to obtain Rh/YIG hybrid structure. A clear thermal voltage V_th (SSE voltage) was obtained when a temperature gradient was applied on the Rh/YIG hybrid. The Rh film showed a very weak anomalous Hall resistance and the magneto-resistive testing clearly ruled out the magnetization of the Rh films via MPE. The anisotropic magnetoresistance (AMR) revealed a clear spin hall magnetoresistance (SMR) signal in Rh film implying a purely intrinsic spin current generation, free from any parasitic magnetic effects. The work can open a new window in the study of pure and uncontaminated spin current, generated in ferromagnetic insulators, using Rh as spin current detector.     

Magnetic field dependence of triplet-state ONP: theoretical analysis in terms of level anti-crossings

ABSTRACT

A theoretical approach to Optical Nuclear Polarisation (ONP) is described, which is based on the analysis of Level Anti-Crossings (LACs) in triplet states. Here we consider ONP formed in molecular crystals doped with suitable guest molecules and ONP generated in diamond crystals containing negatively charged nitrogen-vacancy (NV^–) centres. In both cases, electron spin polarisation of triplet states generated by light excitation is transferred to nuclei giving rise to ONP. Polarisation transfer is most efficient at LACs; for this reason, we consider in detail crossings of electron–nuclear energy levels and the role of different perturbation terms (coming from isotropic and anisotropic hyperfine coupling, zero-field splitting and sample orientation), which turn these crossings into LACs and give rise to ONP. Analytical results are supported by numerical calculations of the ONP field dependences. Thus, the outlined LAC analysis is a useful approach for interpreting the ONP magnetic field dependence.     

基于倍频移相的梯度放大器控制技术

提出了一种基于倍频移相的梯度放大器控制技术,该系统利用PLL 形成相位差通过IGBT 全桥拓扑结构以及输出功率电感并联电流输出．通过输出端闭合反馈系统和各个桥臂的均流控制反馈,实现大功率、低纹波、低噪声的电流输出．将该控制方法用于自主研制开发的梯度放大器上进行实验验证,测试得到的电流精度、纹波、噪声均达到指标要求,结果证明该设计方案具有可行性．     

The ground-state energy of the ±J sping glass. A comparison of various biologically motivated algorithms

We compare various evlutionary strategies to determine the ground-state energy of the ±J spin glass. We show that the choice of different evolution laws is less important than a suitable treatment of the free spins of the system At least one combination of these strategies does not give the correct results, but the ground states of the other different strategies coincide. Therefore we are able to extrapolate the infinit-size ground-state energy for the square lattice to –1.401±0.0015 and for the simple cubic lattice to –1.786±0.004.     

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.     

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate （JLDMCSG） metal-oxide-semiconductor field-effect transistors （MOSFETs） is proposed. It is derived by solving the two-dimensional Poisson＇s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.