硅基发光材料研究进展

微电子技术是高技术中的关键技术，硅是微电子技术的基础材料，但是硅是一种非发光材料，为了发展光电集成技术，必须大力发展硅基发光材料，多孔硅是一种有希望的硅基发光材料，它表明纳米晶粒中的量子限制效应对光发射是极有效的，随之涌现出一系列量子限制硅基发光材料，为发展光电子集成提供了新的途径。     

XRD法测定沸石分子筛中硅铝比

用X射线衍射外推函数法测定NaY超稳分子筛的晶胞参数，用^29Si、^27Al固体NMR方法测定分子筛骨架中的硅铝比，提出了NaY超稳分子筛硅铝比与晶胞参数关联的经验公式。通过测定分子筛的晶胞参数即可得到NaY超稳分子筛的硅铝比。该方法测得的NaY超稳分子筛硅铝比，比通常采用的化学分析方法省时、简便、重复性好。     

低温生长的Ge/Si超晶格界面结构的X射线散射研究

低温下用MBE方法生长了Ge/Si超晶格,X射线反射及横向散射研究表明,Ge亚层上下表面的粗糙度呈反对称,下表面大的粗糙度来源于Ge向Si亚层中扩散形成SiGe混合组分结构,这种组分结构可以用一平均成分的SiGe合金层加以拟合,从而使得各亚层均有一个合理的粗糙度,旋转样品进行的X射线散射研究表明,这种SiGe的混合是各向同性的,这与透射电子显微镜的研究结构相一致.     

Electronic band transformation from indirect gap to direct gap in Si-H compound

The electronic band structures of periodic models for Si-H compounds are investigated by the density functional theory.Our results show that the Si-H compound changes from indirect-gap semiconductor to direct-gap semiconductor with the increase of H content.The density of states,the partial density of states and the atomic charge population are examined in detail to explore the origin of this phenomenon.It is found that the Si-Si bonds are affected by H atoms,which results in the electronic band transformation from indirect gap to direct gap.This is confirmed by the nearest neighbour semi-empirical tight-binding (TB) theory.     

Investigations on AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes With Si‐Doped Quantum Barriers of Different Doping Concentrations

In this work, we investigate the impact of Si doped AlGaN quantum barriers on the optical powers for [0001] oriented III‐nitride based deep‐ultraviolet light‐emitting diodes (DUV LEDs). The polarization‐induced electric field in the active region is screened as the result of Si‐doped quantum barriers, which gives rise to the improved spatial overlap between electron and hole wave functions. The polarization screening effect within the quantum wells is further proven by the observation of the blue shift for the wavelength. However, the hole distribution across the active region can be significantly retarded if the Si dosage in the quantum barriers is too high. Therefore, the improved radiative recombination within the active region can be realized provided that the Si dosage in the quantum barriers is moderately adjusted to guarantee both the better hole injection efficiency and the screened polarization effect in the multiple quantum wells.     

掺杂Si/SiO_2界面电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA)下研究了B掺杂Si/SiO_2界面及其在压强作用下的电子结构和光学性质.能带的计算结果表明:掺杂前后Si/SiO_2界面均属于直隙半导体材料,但掺B后界面带隙由0. 74 eV减小为0. 57 eV,说明掺B使材料的金属性增强;对B掺杂Si/SiO_2界面施加正压强,发现随着压强不断增大,Si/SiO_2界面的带隙呈现了逐渐减小的趋势,并且由直隙逐渐转变为间隙.光学性质的计算结果表明:掺B对Si/SiO_2界面在低能区(即红外区)的介电函数虚部、吸收系数、折射率以及反射率等光学参数有显著影响,且在红外区出现新的吸收峰;对B掺杂Si/SiO_2界面施加正压强,随着压强增大,红外区的吸收峰逐渐消失,而在紫外区出现了吸收峰.上述结果表明,对Si/SiO_2界面掺B及施加正压强均可调控Si/SiO_2界面的电子结构与光学性质.本文的研究为基于Si/SiO_2界面的光电器件研究与设计提供一定的理论参考.     

Third-order nonlinear optical response of silicon nanostructures dispersed in organic solvent under 1064 nm and 532 nm laser excitations

Silicon nanostructures are dispersed into an organic solvent and the third order optical properties of the system are studied by z-scan technique under 1064 nm and 532 nm excitations. The experiment results show that the silicon nanostructures exhibit self-focus and saturable absorption with both excitation wavelengths. Nonlinear absorption results suggest that a new optical bleaching band exists under 532 nm excitation, and a two-step mechanism is tentatively put forward to explain the saturable absorption under 1064 nm excitation.     

大功率低功耗快速软恢复SiGeC功率开关二极管

为满足电力电子电路对功率开关二极管高频化的发展要求，提出了一种大功率低功耗快速软恢复p⁺(SiGeC)-n^--n⁺异质结二极管.与常规的Si p-i-n二极管相比，在正向电流密度不超过1000 A/cm²情况下，p⁺(SiGeC)-n^--n⁺二极管的正向压降减少了约1/5，有效降低了器件的通态功耗；反向恢复时间缩短了一半多，反向峰值电流降低了约25%，软 关键词： 快速软恢复 大功率低功耗 SiGeC/Si异质结功率二极管     

Tunable in-plane spin orientation in Fe/Si(557) film by step-induced competing magnetic anisotropies

Although the spin-reorientation transition from out-of-plane to in-plane in Fe/Si film is widely reported, the tuning of in-plane spin orientation is not yet well developed. Here, we report the thickness-, temperature- and Cu-adsorptioninduced in-plane spin-reorientation transition processes in Fe/Si(557) film, which can be attributed to the coexistence of two competing step-induced uniaxial magnetic anisotropies, i.e., surface magnetic anisotropy with magnetization easy axis perpendicular to the step and volume magnetic anisotropy with magnetization easy axis parallel to the step. For Fe film thickness smaller than 32 monolayer(ML), the magnitudes of two effects under various temperatures are extracted from the thickness dependence of uniaxial magnetic anisotropy. For Fe film thickness larger than 32 ML, the deviation of experimental results from fitting results is understood by the strain-relief-induced reduction of volume magnetic anisotropy.Additionally, the surface and volume magnetic anisotropies are both greatly reduced after covering Cu capping layer on Fe/Si(557) film while no significant influence of Na Cl capping layer on step-induced magnetic anisotropies is observed.The experimental results reported here provide various practical methods for manipulating in-plane spin orientation of Fe/Si films and improve the understanding of step-induced magnetic anisotropies.     

用不同的Mo靶溅射功率制备Mo/Si多层膜

 用磁控溅射法制备了周期厚度和周期数均相同的Mo/Si多层膜,用原子力显微镜和小角X射线衍射分别研究了Mo靶溅射功率不相同时,Mo/Si多层膜表面形貌和晶相的变化。随后在国家同步辐射实验室测量了Mo/Si多层膜的软X射线反射率。研究发现,随着Mo靶溅射功率的增大,Mo/Si多层膜的表面粗糙度增加,Mo的特征X射线衍射峰也增强,Mo/Si多层膜的软X射线峰值反射率先增大后减小。