GaAs PIN二极管电热特性

通过T-CAD软件建立了PIN二极管的电学模型和热学模型,模拟了PIN二极管的稳态与瞬态特性。研究了PIN二极管器件在正反偏压和脉冲电压下的电学特性及热学特性,讨论了PIN二极管的I层厚度与温度的关系,模拟得到了不同I层厚度的稳态与瞬态响应曲线、得到了与器件内部温度的关系。模拟结果表明:随着I层厚度的增加,器件内部最高温度增长减慢,器件内部最高温度区由结区位置向器件的中间位置移动。     

基于焦耳热的光纤布喇格光栅电压传感器研究

设计了一种基于焦耳热的新型光纤布喇格光栅电压传感器以用于小电压的精确监测.实验中通过真空蒸镀法在光栅周围镀上一层金属镍,并将光栅密闭封装在充满气凝胶的铜管中.电压传感通过所镀金属镍层在通电过程中产生的焦耳热引起栅区温度升高,导致光纤光栅反射谱中心波长漂移,从而实现电压与光纤光栅中心波长漂移量的变换.实验表明,封装后的直流电压灵敏度达到520pm/V2,并可用于较低频率的交流传感,且系统结构简单、精度高、易于实现.     

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.     

Superconducting quantum interference devices with different damped junctions operated in directly coupled current- and voltage-bias modes

We investigate niobium thin film superconducting quantum interference devices （SQUIDs） with different Steward- McCumber parameters βc operated in both current- and voltage-bias modes. We experimentally prove that there is no difference between the two bias modes with respect to the SQUID intrinsic noise and the noise contribution from the preamplifier. Furthermore, the relationships of the SQUID dynamic parameters, （Rd）current bias ≈ （Rd）voltage bias and （σV/σФ）current bias ≈ [σi/σФ）Rd]voltage bias, are always satisfied. For a strongly damped SQUID withβc ≈ 0.25, addi- tional positive feedback （APF） and noise cancellation （NC） were employed to enhance σV/σФ, the former showing a degradation in the linear flux range but otherwise the same with NC. For a weakly damped SQUID with βc ≈ 3, it is di- rectly connected to the preamplifier without APF or NC, and a low SQUID system noise of about 4μФ0/x/Hz is measured, which is close to its intrinsic noise.     

自干涉合成孔径激光三维成像雷达原理

在直视合成孔径激光成像雷达(SAL)的基础上,提出了一种自干涉的产生三维成像的原理方法。首先对于交轨向正扫描和反扫描的柱面镜进行位置偏置,造成交轨向成像频谱的平移并产生相对线性相延,然后逐一对一对交轨向正扫描和反扫描收集聚焦像进行相干叠加,并由此产生自干涉。自干涉产生的交轨向平展条纹对于目标面的倾斜投射即可产生包含目标高度信息的波痕干涉图,最后通过解包裹算法产生表征目标表面轮廓的等位线图。本方法采用一发一收的雷达结构通过单航过干涉法实现三维成像,结构简单,原理有效,同时具有抗大气、运动平台等相位干扰能力。     

Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT

In order to improve the breakdown voltage of AlGaN/GaN high electron mobility transistors （HEMTs）, we report a feasible method of low density drain （LDD） HEMT. The fluoride-based plasma treatment using CF4 gas is performed on the drain-side of the gate edge. The channel two-dimensional electron gas （2DEG） concentrations are modulated by fluoride plasma treatment, and the peak electric field at the gate edge is effectively reduced, so the breakdown voltage is improved. The electric field distributions of the LDD-HEMTs are simulated using the Silvaco software, and the peak of the electric field on the gate edge is effectively reduced. Experimental results show that, compared with the conventional HEMT, LDD-HEMTs have a lower reverse leakage current of the gate, and the breakdown voltage is increased by 36%. The current collapse characteristics of the LDD-HEMTs are confirmed by dual-pulse measurement, and an obvious pulse current reduction is due to the surface states by implanting F ions between the gate and the drain.     

注入电流对绿光高压LED光电特性的影响

设计并制备了12 V 的GaN基绿光高压发光二极管（LED）,并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明：电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。     

正电压边缘驱动的双压电片变形镜研制

为提高变形镜的热稳定性,提出一种用正电压边缘驱动的双压电片变形镜,通过环形电极产生整体离焦偏置,分立电极校正波前像差,只用正向电压即可实现镜面双向变形,且此变形镜结构对称受热应力影响小.制备变形镜样机并进行测试,测试结果表明:初始镜面展平后残余误差小于λ/30(λ=1 064nm);精确重构了典型低阶Zernike多项式像差,像散、离焦、三叶草和彗差像差的重构幅值分别达到11.1μm、9.7μm、5.7μm和4.2μm,归一化残余误差分别为1.0%、1.0%、3.3%、6.0%;此外,实验生成了新型无衍射艾里光束,并显示出优异的重构性能.     

半导体二极管在以太网端口的应用研究

利用半导体二极管的单向导电原理和嵌位电压特性作为保护电路,该电路具有结构简单,实用性强、电压低、容性小、时间短等特点。用它来保护高速发展的以太网端口,特别是千兆的以太网端口,高性能的集成块具有很强大的保护作用,能够使精密的仪器免受瞬态电压的破坏。本文网络版地址：http：//www.eepw.com.cn/article/274758.htm     

大电流电动汽车电池充电电流电压反馈系统设计

针对电动汽车厂家研发了电动汽车电池充电系统,设计了一种大电流低电压电池充电系统。系统采用了PIC16F877A单片机作为电子控制单元核心,对规格为50 A、3.7 V的电池组进行充电。重点对电流电压采样电路进行了设计和研究。通过建立采样电路的仿真模型。并用实际电压电流数据对本采样系统进行了验证。实验证明,系统提出的电流电压采样具有较高的精度、线性度,且能满足长期稳定运行的实际需求。