瞬态热传导问题的复变量重构核粒子法

在重构核粒子法的基础上,引入复变量,讨论了复变量重构核粒子法.复变量重构核粒子法的优点是在构造形函数时采用一维基函数建立二维问题的修正函数.然后,将复变量重构核粒子法应用于瞬态热传导问题的求解,结合瞬态热传导问题的Galerkin积分弱形式,采用罚函数法引入本质边界条件,建立了瞬态热传导问题的复变量重构核粒子法,推导了相应的计算公式.与传统的重构核粒子法相比,复变量重构核粒子法具有计算量小、精度高的优点.最后通过数值算例证明了该方法的有效性. 关键词： 重构核粒子法 复变量重构核粒子法 修正函数 瞬态热传导问题     

带-NH2的嘧啶环对钌配合物与DNA相互作用的瞬态发光特性的影响

采用时间分辨的发光光谱技术,分别测量了两种新合成的钌配合物[Ru(bpy)2 (dpbpd(NH2)2)]2 和[Ru(phen)2(dpbpd(NH2)2)]2 与小牛胸腺脱氧核糖核酸(ctDNA)相互作用时的瞬态发光动力学过程,并与以往对[Ru(phen)2dppz]2 等的研究结果进行对比,从而研究带-NH2的嘧啶环对配合物与DNA作用动力学过程的影响.结果表明:这两种含有带-NH2的嘧啶环的钌配合物与DNA相互作用时的发光按双指数规律衰减,发光寿命为几十纳秒,比dppz类钌配合物与DNA作用时的发光衰变寿命(几百纳秒)小一个数量级.归因于嘧啶环上的N和-NH2可能与水分子、DNA的碱基对或磷酸骨架形成氢键,从而加快激发态的无辐射弛豫,削弱发射光强,缩短发光寿命.该结论为进一步研究配合物分子与DNA的相互作用的机理提供了一定的依据.     

海底爆破辐射声场的理论及数值研究

对固体基底浅海中声波传播的色散特性作了数值模拟与分析. 利用液体及固体中声传播理论导出了固体基底内爆破源在浅海中所激发声场的解析解, 在此基础上, 通过数值计算, 得出了浅海中不同空间点处的瞬态声压时域波形, 并在瞬态声压时域波形的平滑伪Wigner-Ville分布基础上, 对固体基底内爆破源在浅海中所激发瞬态声场的特性作了详细分析. 关键词： 海底爆破 声场 色散 瞬态声压     

激子旋转弛豫对低掺杂卟啉侧链聚合物荧光衰变过程的影响

利用激子旋转扩散理论研究了一类低掺杂卟啉侧链聚合物中卟啉侧链基团的旋转对其发光动力学过程的影响.研究表明,卟啉侧链基团的旋转行为是导致激发态无辐射能量弛豫的重要途径.基团旋转越容易,能量弛豫速度越快,这可导致一个快速的荧光衰变动力学过程.在卟啉低掺杂浓度和聚合物分子链间距离较大的情况下,卟啉侧链基团的旋转成为影响荧光寿命和发光效率的主要因素.对实验测得的两种样品的荧光弛豫过程进行了拟合,理论结果与实验结果符合较好. 关键词： 激子旋转弛豫 瞬态荧光 卟啉侧链聚合物     

不同启动加速度下离心泵瞬态水力性能的试验研究

为了研究离心泵在不同加速度下的启动特性,对一台小型离心泵进行启动试验研究.介绍了试验装置、数据测试方法以及不同加速度的调节方法.在测试模型泵的稳态性能和基本瞬态性能基础上,测试和分析了不同启动加速度对瞬态性能的影响.结果显示,启动过程中,在转速到达最大值附近,瞬态扬程明显小于准稳态预测值,且不同加速度下两者的偏离明显不同;并且在各加速度条件下,瞬态工况到达泵的最佳效率工况点后瞬态性能得到提高.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

步进扫描时间分辨光谱及其在太阳电池光电导上的应用

建立傅里叶变换步进扫描时间分辨光电导光谱，并研究太阳电池中与转换效率密切相关的少数载流子寿命.实验选取三种典型的硅太阳电池(单晶硅样品1、多晶硅样品2和多晶硅样品3 )，发现其瞬态光电导的上升和衰退曲线可以分别用两个简单的指数函数描述.由于有复合中心的参与，复合过程中少数载流子的寿命比产生过程中的寿命短.为验证实验结果的可靠性，采用了提取样品少数载流子的体寿命和计算其有效扩散长度两种方法.通过与太阳电池暗伏安特性和负载特性研究相结合，进一步分析和讨论了少数载流子寿命与短路电流、开路电压和转换效率的关系.同时探讨了步进扫描时间分辨光谱实验的其他用途. 关键词： 步进扫描 时间分辨 硅太阳电池 瞬态光电导     

不同层显式格式及在微尺度热传导中的应用

基于指数拟合和牛顿插值多项式构造了用于数值计算偏微分方程的不同层显式格式,应用不同层显式格式可获得不同精度的数值计算结果,并将该算法应用于微结构热传导方程和薄膜强瞬态热传导方程中．     

Optimization of the three-dimensional electric f ield in IH-DTL

The tuning process of the three-dimensional electric field near the beam axis is very important in the optimization of the Interdigital H-mode Drift Tube Linac (IH-DTL). The tuning of the longitudinal field distribution, the Kilpatrik (Kp) factor, and the transverse dipole field have been discussed in detail, combined with the radio-frequency tuning process of the 53.667 MHz short IH-DTL cavity, which was designed to accelerate ²³⁸U³⁴⁺ from 0.143 MeV/u to 0.289 MeV/u in the SSC-Linac injector project at the Institute of Modern Physics. The flatness criterion and the tube tuning method are discussed in order to meet the beam dynamics requirements. In the tube tuning process, the energy gain error in the cells should be reduced to less than ±2%, and the Kp factor should be reduced to 1.6. The transverse dipole field and the method that uses a "plunger" to dismiss this dipole field are evaluated. The experience gained from the first cavity optimization benefits the tuning process of the three remaining IH-DTL cavities in the SSC-Linac project.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.