用于空间激光通信的InGaAsP 激光二极管辐射损伤研究(英文)

对1:55 μm波长DFB 结构的InGaAsP 多量子阱激光二极管开展电子和60Co- 射线辐照试验。试验结果表明,激光二极管的斜度效率主要受带电粒子沉积的电离总剂量影响,而阈值电流和光功率主要受位移损伤剂量的影响。利用位移损伤剂量方法评价激光二极管的辐射损伤特征,并且预测其在空间辐射环境中的光功率衰退情况。模拟计算结果表明,MEO轨道辐射环境对激光二极管光功率辐射损伤远大于GEO轨道的影响,这主要是由于MEO轨道辐射环境的高能电子通量密度远大于GEO轨道的通量密度。The 1.55 μm InGaAsP multi-quantum-well laser diodes with distributed feedback structures were irradiated by electrons and 60Co- rays. The experimental results show the slope efficiency of laser diode is mostly affected by the total ionizing dose produced by charging particles, and the threshold current and the optical power mainly by displacement damage dose. The displacement damage dose methodology was employed to evaluate radiation damage of the laser diodes, and to predict the power degradations of these diodes in space. The calculated results indicate that the optical powers of the diodes will have more serious degradation for medium Earth orbit than for geosynchronous Earth orbit,due to higher fluence density of high energy electrons in GEO orbits.     

燃气轮机叶片叶尖间隙光纤测量系统设计

燃气轮机转子叶尖间隙对发动机性能有重要影响,为实现其精密测量,首先,根据光纤对光强耦合原理得到了双圈同轴光纤束的光强调制特性函数;接着,分析了倾角变化对反射式光纤位移传感器测量特性的影响;然后,完成了间隙测量系统设计;最后,通过静态测量实验和不同转速下的动态测量实验验证了所设计系统的性能;实验结果表明:所设计传感器线性测量范围为2 mm,测量系统动态性能较好。     

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.     

对称迭层矩形板的平面应力分析

常用的对称迭层板为各向异性板．根据平面应力问题的基本方程精确地用应力函数解法求得了各向异性板的一般解析解．推导出平面内应力和位移的一般公式,其中积分常数由边界条件来决定．一般解包括三角函数和双曲函数组成的解,它能满足4个边为任意边界条件的问题．还有代数多项式解,它能满足4个角的边界条件．因此一般解可用以求解任意边界条件下的平面应力问题．以4边承受均匀法向和切向载荷以及非均匀法向载荷的对称迭层方板为例,进行了计算和分析．     

Global and exponential attractors for 3‐D wave equations with displacement dependent damping

A weakly damped wave equation in the three‐dimensional (3‐D) space with a damping coefficient depending on the displacement is studied. This equation is shown to generate a dissipative semigroup in the energy phase space, which possesses finite‐dimensional global and exponential attractors in a slightly weaker topology. Copyright © 2006 John Wiley & Sons, Ltd.     

三维电子散斑干涉技术及其应用研究

通过大错位剪切镜和一作为参考物的压电陶瓷相移器将三个电子散斑干涉系统组成一新的三维电子散斑干涉系统。利用该系统，结合相移技术和图像处理技术，可得到独立的位移场(u,v和w场)。该技术的特点是用三个激光器作为光源，一个压电陶瓷相移器产生参考光并实现相移，CCD摄像机前放置大错位剪切镜以使物光和参考光产生干涉。将该技术应用到柴油发动机零部件测量上，得到了主轴承孔周的三维位移场。     

基于层状模型的功能梯度板中兰姆波传播研究

功能梯度板中的兰姆波的传播在实际工程中有着非常广泛的应用。采用层状模型研究了兰姆波在材料特性沿厚度方向连续变化的功能梯度板中的传播特性。通过数值计算获得了层状板中兰姆波的色散关系,并与已有结果进行了比较,获得了材料属性沿厚度方向呈指数变化和多项式变化时功能梯度板中兰姆波的波速和位移解。当材料属性连续变化时,兰姆波各阶模态的波速与位移都将发生变化。相比于兰姆波的高阶模态,低阶模态的波速变化更加明显。本文的研究可为功能梯度板的设计提供参考。     

STABILITY OF DISPLACEMENT TO THE SECOND FUNDAMENTAL PROBLEM IN PLANE ELASTICITY

In this article, by using the stability of Cauchy type integral when the smooth perturbation for integral curve and the Sobolev type perturbation for kernel density happen, we discuss the stability of the second fundamental problem in plane elasticity when the smooth perturbation for the boundary of the elastic domain （unit disk） and the Sobolev type perturbation for the displacement happen. And the error estimate of the displacement between the second fundamental problem and its perturbed problem is obtained.     

Theoretical study on the mechanism of thieno[3,2‐b]benzofuran bromination: the importance of Lewis and non‐Lewis type NBOs interactions along the reaction path

A density functional theory study has been performed to estimate the electrophilic thieno[3,2‐b]benzofuran bromination reaction. Optimized structures for all stationary points were examined by employing the B3LYP and BMK at the 6‐31++G(d,p), 6‐311G(d,p), and 6‐311++G(d,p) levels of theory. The solvent polarity has a significant effect on a reduction of activation energies barriers. The reaction involves the formation of a triangle complex, migration of a proton through the bromine moiety followed by ionization of the bromine bond, and activation to the σ‐complex. Finally, the σ‐complex transforms into the reaction products. The natural bond orbital (NBO) population analysis was performed along the reaction minimal energy path defined as a function of the intrinsic reaction coordinate (IRC). The evolution of interaction energies between filled and empty NBOs along IRC has been estimated. The importance of these interactions for the disruption of Br?Br and C?H bonds and creation of C?Br and H?Br bonds have been emphasized. The changes in NBOs hybridization, covalency effects, electrostatic potential density maps, and occupancy of natural bonds have been investigated along IRC. The results obtained explain well the essence of bonding transformations and electron density changes during the reaction. Copyright © 2015 John Wiley & Sons, Ltd.     

计算电容中Fabry-Perot干涉仪测量位移的相位修正方法

计算电容是复现电学阻抗单位的基准装置, 利用计算电容值和量子霍尔电阻值可以准确计算出精细结构常数α. 计算电容的本质是通过高准确度地测量屏蔽电极的位移, 实现对电容量值的测量. 因此, 基于Fabry-Perot干涉仪的精密电极位移测量系统是计算电容装置中最为核心和关键的部分. 在Fabry-Perot干涉仪测位移过程中, 由于高斯激光束存在轴向Gouy相位, 该附加相位将会引起相邻干涉条纹对应位移的变化(大于或者小于λ/2), 导致位移的测量值与实际值存在偏差. 本文阐述了高斯激光场的传播特性, 利用高斯激光束在自由空间和透过薄透镜复振幅的变换关系, 建立了计算电容装置中Fabry-Perot干涉仪透射光束的传输模型; 通过对不同腔长的Fabry-Perot干涉仪透射光场相位的分析, 获得了高斯激光束轴向Gouy相位修正与传输距离的关系. 结果表明, 当腔长从111.3 mm移动至316.3 mm时, 在接收距离为560 mm的情况下, 高斯光束轴向Gouy 相位引起的位移修正的绝对值最小为0.7 nm, 其相对相位修正量|δL|/|ΔL| = 3.4×10^-9.