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介绍了为开展漏孔检测、氘-氦分辨性能及真空检漏技术等相关实验研究而进行的四极质谱计分析与测量系统的研制,描述了真空室结构、抽气设备的选型、测量仪器的选择及控制保护子系统工作方式。对系统进行了包括极限真空、残余气体质谱分析、漏放气率、质谱计性能等测试,结果表明本系统达到了设计要求。     

高温超导YBCO带材的交流传输电流损耗测量

文中对不同频率不同幅值的交变电流下高温超导体YBCO带材的交流传输损耗进行了实验研究。实验在77K下,对Superpower公司生产的SCS4050型号带材采用电测法通过锁相放大器进行了交流损耗值的测量,并将其工作电流为50Hz时的测量结果与Norris矩形模型估算值进行了对比,同时也给出了15Hz到300Hz不同频率下交流损耗测量结果的比较分析。     

Magnetic nondestructive technology for detection of tempered martensite embrittlement

A nondestructive eddy current technique is used to evaluate tempered martensite embrittlement in 4340 AISI steels after quench and tempering in the range 240–550 °C. A relation between the responses of the magnetic induction (normalized impedance of the coil) and destructive Charpy impact test results has been established. The study shows that the eddy current method could be used to separate brittle parts due to the microstructure changes.     

Si/Si1−xGex/Si-based quantum wells infrared photodetector operating at 1.55 μm

A quantum well infrared photodetector consisting of self-assembled type II SiGe/Si based quantum wells operating around 1.55 μm at room temperature has been investigated. The Si_1−yGe_y/Si/Si_1−xGe_x/Si/Si_1−yGe_y stack results in a ‘W’ like profiles of the conduction and valence bands strain-compensated in the two low absorption windows of silica fibers infrared photodetectors have been proposed. Such computations have been used for the study of the p-i-n infrared photodetectors operating, around (1.3–1.55 μm) at room temperature. The quantum transport properties of electrons and holes were approved with Schrödinger and kinetic equations resolved self-consistently with the Poisson equation. The theoretical performances of the photodetector were carried out such as the dark current mechanisms, the temperature dependence of normalized dark current and the zero-bias resistance area product (R₀A).     

Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers

A multi-hole vertical-cavity surface-emitting laser(VCSEL) operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-reflector of an oxidationconfined 850 nm VCSEL.The single-mode output power of 2.6 mW,threshold current of 0.6 mA,full width of half maximum lasing spectrum of less than 0.1 nm,side mode suppression ratio of 28.4 dB,and far-field divergence angle of about 10 are obtained.The effects of different hole depths on the optical characteristics are simulated and analysed,including far-field divergence,spectrum and lateral cavity mode.The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter-hole spacing and the scattering loss at the bottom of the holes,particularly for higher order modes.     

快放电直线型变压器驱动源磁芯脉冲损耗特性

建立了快脉冲磁芯损耗特性测试平台,对比研究了50 m的DG6硅钢和25 m的2605TCA非晶两种材料磁芯损耗特性;采用一种新的特征参量(磁芯单位面积上激磁电压陡度)来规范磁芯的激磁电压条件,使得实验结果与快放电直线型变压器驱动源实际工作条件下磁芯性能具有可比性;通过测量初级漏电流及次级开路电压,获得了相同激磁条件下两种磁芯等效损耗电阻的大小,50 m 的DG6硅钢磁芯损耗约为25 m的2605TCA非晶磁芯损耗的4倍;计算了两种材料磁芯总损耗中涡流损耗所占的比例,50 m的DG6硅钢磁芯涡流损耗占总损耗的75%,25 m的2605TCA非晶磁芯涡流损耗占总损耗的28%。     

长间隙真空触发开关导通特性

基于真空触发开关的导通机理,设计了长间隙真空触发开关导通特性的实验方案。根据高速摄像图片讨论了长间隙真空触发开关的导通过程和影响导通特性的因素。通过实验得到了触发电流对间隙脉冲电流的影响规律:采用上升时间较短且峰值较高的触发电流,能够明显降低主间隙的火花电阻和导通延时,验证了对导通过程的理论预测。     

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

The ruggedness of a superjunction metal–oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.     

等离子喷涂含钪氧化物阴极制备及发射特性研究

在三元碳酸盐中加入微量钪,利用大气等离子喷涂方法制备出含钪等离子喷涂氧化物阴极. 制备过程中,在三元碳酸盐原来配比基础上增加12%—22%(摩尔百分比)的碳酸钡进行混合, 并将该混合物进行造粒,在造粒过程中加入微量的钪.利用扫描电子显微镜分析了等离子喷涂材料的形态 和分布,表明符合等离子喷涂对粉末大小和形状的要求,并解决了等离子喷涂过程中钡的损失问题. 对这种新型氧化物阴极的分解排气过程进行详细分析,结果表明,排气时这种阴极比普通喷涂阴极出气少 且分解时间短.对发射性能及寿命进行测试,结果显示这种新型氧化物阴极的性能显著提高,阴极寿命延长.     

外控弱周期电流约束下电极B-Z反应体系中的时间自组织

以经典BZ化学反应体系的三变量Oregonator模型及电极过程动力学为基础,提出了外控弱周期电极电流约束下电极BZ反应体系与体相BZ反应体系相互耦合的动力学模型.在体相处于稳定定态参数条件下,系统地研究了外控弱周期电流约束下电极BZ反应体系中的动力学行为,定量分析了电流慢变流型上的准定态稳定性及有利于出现极限环振荡区域.研究表明,与以前所报道的外控弱周期电位约束情况类似,在外控弱周期电流约束下电极BZ反应体系中的极限环振荡区域亦发生了蜕变,但体系对外控电流约束中的这种持续性之周期扰动的响应表现在两个方面:有利于出现极限环振荡区域的缩变及原非振荡区胁迫振荡的出现.