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41.
The heat capacities of D-galactose and galactitol were measured on a quantum design physical property measurement system(PPMS) over a temperature range of 1.9―300 K, and the experimental data were fitted to a function of T using a series of theoretical and empirical models in appropriate temperature ranges. The fit results were used to calculate thermodynamic function values,Cp,mθ0TSmθ, and Δ0THmθfrom 0 K to 300 K. The standard molar heat capacity, entropy and enthalpy values of D-galactose and galactitol at 298.15 K and 0.1 MPa were determined to be Cp,mθ =(227.96±2.28) and (239.50±2.40) J·K-1·mol-1,Smθ= (211.22±2.11) and (230.82±2.30) J·K-1·mol-1 and = Hmθ (33.95±0.34) and (36.57± 0.37) kJ/mol, respectively.  相似文献   
42.
Highly (100)-oriented (Pb1?x?yLaxCay)Ti1?x/4O3 (x=0.15, y=0.05; x=0.1, y=0.1; x=0.05, y=0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates at a low temperature of 450?°C via a sol–gel route. It was found that all the (Pb1?x?yLaxCay)Ti1?x/4O3 thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb1?x?yLaxCay)Ti1?x/4O3 (x=0.1, y=0.1) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss (tan?δ<0.08) and leakage current (J4.6×10?5 A/cm2), a high recoverable energy density (Wre ~ 15 J/cm3), as well as a large pyroelectric coefficient (p ~ 190 μC/m2K) and figure of merit (Fd77μC/m2K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.  相似文献   
43.
An Fe layer was sputter-deposited onto porous alumina templates and Kapton respectively. Fe layer on the porous alumina templates formed an antidot arrays nanostructure, while Fe layer on the Kapton substrate formed a continuous film. Scanning electron microscopy and grazing incidence X-ray diffraction were employed to characterize the morphology and crystal structure of the Fe antidot arrays and continuous film, respectively. The temperature dependence of magnetic properties was shown in the temperature range 2-300 K. The irreversibility of the magnetization of Fe antidot arrays film, as measured in zero-field cooling (ZFC) and field cooling (FC) states, was attributed to the pinning effect of the holes.  相似文献   
44.
低温恒能量同步荧光法同时快速检测食品中多种多环芳烃   总被引:1,自引:0,他引:1  
恒能量同步荧光法应用于多环芳烃的检测可以提高选择性,低温可使谱带呈指纹特征,提供常温光谱无法获得的光谱细节信息,有助于实现对复杂基体中多环芳烃的检测。文章结合恒能量同步荧光扫描技术与斯波斯基低温技术,建立了食品中多种多环芳烃的低温恒能量同步荧光同时快速分析方法。对低油脂样品直接用正辛烷浸泡,高油脂样品也只需要增加皂化萃取,即可进行光谱扫描来检测食品样中的多种多环芳烃。对两种类型的实际样进行加标回收实验,回收率为80.2%~98.9%,定量工作曲线线性较好(r≥0.993 8)。该方法选择性好、操作简便快捷、费用低廉。  相似文献   
45.
合成了乙二胺盐酸盐, 并表征了其晶体结构. 测定了其在78~370 K温度区间的低温热容, 通过最小二乘法拟合得到热容对温度的多项式方程. 设计了合理的热化学循环, 测定了所设计反应的反应物和产物的溶解焓, 得到反应焓. 利用Hess定律计算出乙二胺盐酸盐的标准摩尔生成焓为-(540.74±1.33) kJ/mol. 利用紫外-可见光谱和折光指数的结果检验了所设计热化学循环的可靠性.  相似文献   
46.
When GaAs–Si and GaAs–AlGaAs heterostructures are exposed to γ-quanta, radiation stimulated ordering is observed. However, the gettering efficiency in such systems falls for layer widths more than 1 μm. For this reason we seek effective methods of radiation resistance improvement of materials in which one would expect point radiation defects to be gettered not only at defect boundaries, but also in the active layer volume.

S.i.GaAs–s.i.AlxGa1−xAs–nGaAs : Te heterostructures are presented with epitaxial layers (doped with Yb or undoped), obtained by means of LPE (liquid-phase epitaxy). The electron concentration in nGaAs was found to be (1–3)×1018 cm−3 for widths 1–3 μm. The samples were exposed to 60Co γ-quanta with doses of 105–107 rad.

Investigations of irradiated samples by means of low-temperature (4.2 K) photoluminescence have shown considerable decrease of exciton halfwidth in the boundary spectra of nGaAs : Te : Yb epitaxial layers in comparison with nGaAs : Te layer spectra. This is caused by background impurity gettering which happens on the s.i.AlxGa1−xAs–nGaAs heteroboundaries as well as in deformed regions in the epitaxial layer volume. Formation of such regions is caused by the difference between the covalent radii of Yb atoms and GaAs lattice atoms. The maximum effect of radiation stimulated gettering of dopants in nGaAs epitaxial layers is observed for Yb concentrations which are equal to 10−4–10−5 atomic fractions in a solution-melt.

It is determined that the deformed regions in epitaxial layer volumes and heteroboundaries could be efficient drains for point radiation defects which form under radiation exposure. The investigations carried out showed that the doping of an epitaxial layers by rare-earth impurities provides considerable improvement in forming radiation resistant III–V materials.  相似文献   

47.
The major objective of this work is to numerically investigate the interacting physical and chemical phenomena that characterize the flow in a stabilized cool flame diesel fuel spray evaporation system. A two-phase RANS computational fluid dynamics code has been developed and used to predict the characteristics of the developing turbulent, multiphase, multi-component, reactive flow-field. The code employs a Eulerian–Lagrangian approach, taking into account the mass, momentum, thermal and turbulent energy exchange between the phases. A variety of physical phenomena, such as turbulent dispersion, droplet evaporation, droplet-wall collision, conjugate heat transfer, drift correction, two-way coupling are taken into account by implementing respective sub-models. Two alternative modelling approaches for the simulation of cool flame reactions have been validated and evaluated by comparing numerical predictions with experimental data from two atmospheric pressure, evaporating Diesel spray, Stabilized Cool Flame reactors. Both models have achieved good quantitative agreement in the majority of the considered test cases. The results have been used to estimate the local physical and chemical characteristic time scales of the occurring phenomena, thus allowing, for the first time, the classification of stabilized cool flames.  相似文献   
48.
太赫兹时域光谱技术是一种在太赫兹频段内,广泛应用的光谱测量技术。这种技术可以用于许多物质的频谱分析,对于研究化学、半导体与生物分子等领域有着无可比拟的作用。然而用该系统进行样品探测时,受回波的影响频谱分辨率较低;受太赫兹波光斑大小以及待测样品与电磁波相互作用距离长短的影响,样品消耗量较多,并且整个系统的占用空间较大,这些局限性都限制了太赫兹时域光谱系统的进一步发展。为了突破太赫兹时域光谱系统的局限性,设计了一种将太赫兹泵浦区、探测区和传输波导集成到一个硅片上的太赫兹片上系统,该系统不仅能够解决上述系统的局限性,还能够省去样品测量前的光路准直环节,使样品的测量过程更加简便,同时集成化的系统也很大程度上提高了太赫兹波传输的稳定性。在太赫兹片上系统中,泵浦区和探测区的光电导天线是由低温砷化镓和金属电极制成,由于受到太赫兹片上系统的高度集成化和低温砷化镓晶体生长条件的限制,如何制备出低温砷化镓半导体薄膜衬底,并将其转移与键合,是太赫兹片上系统研制过程中的关键环节。首先利用分子束外延(MBE)技术制备出由半绝缘砷化镓、砷化镓缓冲层、砷化铝牺牲层和低温砷化镓层构成的外延片,然后利用盐酸溶液与砷化铝和低温砷化镓反应速度差别较大的原理,将200 nm厚的AlAs牺牲层腐蚀掉,从而得到2 μm厚的低温砷化镓薄膜。为了更加高效并且完整地得到低温砷化镓薄膜,研究了盐酸溶液在不同温度和不同浓度下与AlAs牺牲层的选择性腐蚀速率的关系。给出了低温砷化镓薄膜制备过程中盐酸的最佳体积比浓度和最佳温度,即在73 ℃下13.57%的盐酸溶液中进行砷化铝牺牲层的腐蚀。相比于已有工艺,这种腐蚀方法对实验设备的要求较低并且具有较高的安全性。最后,将单层低温砷化镓薄膜转移键合至硅片上,并制成光电导天线的结构。利用飞秒激光脉冲进行激发探测到太赫兹信号。由此说明,低温砷化镓薄膜的获取、转移与键合工艺能够满足芯片级太赫兹系统的制作要求,这为太赫兹片上系统的进一步研制打下了坚实的基础。  相似文献   
49.
Au/SnO2的制备及其低温CO氧化催化性能   总被引:6,自引:0,他引:6  
用沉积-沉淀法制备了不同金含量的Au/SnO2催化剂.采用XRD和UV-Vis等手段对催化剂样品进行了表征并考察了沉积溶液的pH值、金的负载量、焙烧温度和气氛等对Au/SnO2催化CO氧化活性的影响.结果表明:当沉积溶液的pH=9~10时,所制得的金属金的平均粒径最小;随着金的负载量的增大,金属金的粒径增大, Au/SnO2的催化活性降低;在所研究的条件下, Au/SnO2前驱体在空气中473 K下焙烧4 h,得到的催化剂活性最高;在氢气中373 K下处理2 h的Au/SnO2的催化活性在所有样品中是最高的.  相似文献   
50.
Wei Zhang 《Talanta》2007,71(4):1481-1486
A new method of combining low-temperature Shpol'skii effect with non-linear variable-angle synchronous fluorescence spectrometry (L-NLVASFS) has been proposed to increase spectral resolution. This coupled method was applied successfully to the simultaneous identification and quantification of some polycyclic aromatic hydrocarbons (PAHs) in mixtures, which cannot be determined by non-linear variable-angle synchronous fluorescence spectrometry at room-temperature (R-NLVASFS). The usefulness of this method is demonstrated by the analyses of synthetic mixtures and several real samples of airborne particulates.  相似文献   
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