Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced.     

Roles of blocking layer and anode bias in processes of impurity-band transition and transport for GaAs-based blocked-impurity-band detectors

Recently, GaAs-based BIB detector has attracted a lot of attention in the area of THz photovoltaic detection due to potential application values in security check and drug inspection. However, the physical mechanisms involving in carrier transition and transport are still unclear due to the poor material quality and immature processing technique. In this paper, the dark current and THz response characteristics have thus been numerically studied for GaAs-based blocked-impurity-band (BIB) detectors. The key parameters and physical models are constructed by simultaneously considering carrier freeze-out and impurity-band broadening effects. Roles of blocking layer and anode bias in processes of impurity-band transition and transport are intensively investigated, and the results can be well explained by numerical models. It is demonstrated that the effective electric field for the detector is only located in the absorbing layer, and can determine to a large extent the magnitude of the dark current and THz response. While the blocking layer not only can suppress dark current but also can attenuate responsivity due to its electric-field modulation effect.     

Influence of the image charge effect on the hydrogen-like impurity-bound polaron in a spherical quantum dot in the presence of an electric field

We have investigated the influence of an external electric field on the binding energies and polaronic shifts of the ground and some first few excited states of a hydrogenic impurity in a spherical quantum dot by taking into account the image charge effect. By using Landau–Pekar variational method the general analytical expression is obtained for the impurity bound-polaron energies. It has been numerically identified the conditions (electric field, nominal radius of quantum dot, etc.) in which the bound-polaron states can be existence in GaAs quantum dot. We have shown that the polaronic shifts in the binding energy of 1s-like state are the same in cases with and without image charge effect while they for 2s-like state are not coincide and have different monotonic behavior versus confinement potential. Electron–phonon interaction lifts the degeneracy of the 2px-, 2py-, and 2pz-like states of a donor impurity and reduces their binding energies.     

Wave propagation in viscoelastic single-walled carbon nanotubes with surface effect under magnetic field based on nonlocal strain gradient theory

The governing equation of wave motion of viscoelastic SWCNTs (single-walled carbon nanotubes) with surface effect under magnetic field is formulated on the basis of the nonlocal strain gradient theory. Based on the formulated equation of wave motion, the closed-form dispersion relation between the wave frequency (or phase velocity) and the wave number is derived. It is found that the size-dependent effects on the phase velocity may be ignored at low wave numbers, however, is significant at high wave numbers. Phase velocity can increase by decreasing damping or increasing the intensity of magnetic field. The damping ratio considering surface effect is larger than that without considering surface effect. Damping ratio can increase by increasing damping, increasing wave number, or decreasing the intensity of magnetic field.     

The effect of hydrostatic pressure,temperature and magnetic field on the nonlinear optical properties of asymmetrical Gaussian potential quantum wells

In this study, simultaneous effects of hydrostatic pressure, temperature and magnetic field on the linear and nonlinear intersubband optical absorption coefficients (OACs) and refractive index changes (RICs) in asymmetrical Gaussian potential quantum wells (QWs) are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy eigenvalues and their corresponding eigenfunctions of the system are calculated with the differential method. Our results show that the position and the magnitude of the resonant peaks of the nonlinear OACs and RICs depend strongly on the hydrostatic pressure, temperature and external magnetic field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons.     

Synthesis and characterization of CdS nanocrystals in Maleic anhydride–Octene-1–Vinylbutyl Ether terpolymer matrix

A Maleic anhydride–Octene-1–Vinylbutyl Ether terpolymer was synthesized via the radical terpolymerization method in order to prepare a new matrix for CdS nanocrystal synthesis. CdS nanocrystals were synthesized through the reaction of thiourea with cadmium chloride. The synthesized terpolymer/CdS nanocrystal composites were characterized by several methods. Energy Dispersive X-ray analysis, Raman spectroscopy and powder X-ray diffraction methods. The room temperature UV–visible absorption spectra show a shift of the absorption edge towards higher energies. The band gap of the CdS nanocomposite is bigger than that of bulk CdS. Raman spectrum exhibits characteristic peaks of CdS. Images of the nanocomposite obtained with Atomic Force Microscopy and Transmission Electron Microscopy are the evidences of CdS nanocrystal formation in the terpolymer. Thermal investigation shows that the nanocomposite is more thermostable than the terpolymer which could be useful for application in thermo aggressive medium.     

Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance

An analytical model for a novel triple reduced surface field(RESURF) silicon-on-insulator(SOI) lateral doublediffused metal–oxide–semiconductor(LDMOS) field effect transistor with n-type top(N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional(2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage(BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer(Q_(ntop)) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.     

Interplay of iron and rare-earth magnetic order in rare-earth iron pnictide superconductors under magnetic field

The magnetic properties of iron pnictide superconductors with magnetic rare-earth ions under strong magnetic field are investigated based on the cluster self-consistent field method. Starting from an effective Heisenberg model, we present the evolution of magnetic structures on magnetic field in RFeAsO(R = Ce, Pr, Nd, Sm, Gd, and Tb) and RFe_2As_2(R =Eu) compounds. It is found that spin-flop transition occurs in both rare-earth and iron layers under magnetic field, in good agreement with the experimental results. The interplay between rare-earth and iron spins plays a key role in the magneticfield-driven magnetic phase transition, which suggests that the rare-earth layers can modulate the magnetic behaviors of iron layers. In addition, the factors that affect the critical magnetic field for spin-flop transition are also discussed.     

Dynamics of a three-level V-type atom driven by a cavity photon and microwave field

We discuss the dynamics of a three-level V-type atom driven simultaneously by a cavity photon and microwave field by examining the atomic population evolution. Owing to the coupling effect of the cavity photon, periodical oscillation of the population between the two upper states and the ground state takes place, which is the well-known vacuum Rabi oscillation. Meanwhile, the population exchange between the upmost level and the middle level can occur due to the driving action of the external microwave field. The general dynamic behavior is the superposition of a fast and a slow periodical oscillation under the cooperative and competitive effect of the cavity photon and the microwave field. Numerical results demonstrate that the time evolution of the population is strongly dependent on the atom–cavity coupling coefficient g and Rabi frequency ?_e that reflects the intensity of the external microwave field. By modulating the two parameters g and ?_e, a large number of population transfer behaviors can be achieved.     

Field emission properties of a-C and a-C:H films deposited on silicon surfaces modified with nickel nanoparticles

The a-C and a-C:H films are deposited on silicon surfaces modified with and without nickel nanoparticles by using mid-frequency magnetron sputtering. The microstructures and morphologies of the films are analyzed by Raman spectroscopy and atomic force microscopy. Field emission behaviors of the deposited films with and without nickel nanoparticles modification are comparatively investigated. It is found that the hydrogen-free carbon film exhibits a high field emission current density and low turn-on electric field compared with the hydrogenated carbon film. Nickel modifying could increase the current density, whereas it has no significant effect on the turn-on electric field. The mechanism of field electron emission of a sample is discussed from the surface morphologies of the films and nickel nanoparticle roles in the interface between film and substrate.