硼膜制备工艺、微观结构及其在硼化镁超导约瑟夫森结中的应用

MgB_2材料具备临界转变温度较高、相干长度大、临界电流和临界磁场高等优点,被认为有替代Nb基超导材料的潜力.研究了不同温度下以化学气相沉积法制备的硼(B)薄膜的微观结构.实验结果表明:较低温度沉积的B先驱薄膜为无定形B膜,可以与Mg蒸气反应生成MgB_2超导薄膜;当沉积温度高于550?C时,所得硼薄膜为晶型薄膜;以晶型硼薄膜为先驱膜在镁蒸气中退火,不能生成硼化镁超导薄膜.利用晶型B膜的这一特点,成功制备了以晶型硼薄膜为介质层的硼化镁超导约瑟夫森结.     

烧结空洞对半导体激光器热分布的影响

在半导体激光器芯片与热沉的焊接过程中不可避免地会在焊料层产生一些空洞,而空洞会在铟的电迁移以及电热迁移作用下慢慢变大,使芯片局部温度迅速上升,进而影响半导体激光器的性能。针对10 W的808 nm单管焊装半导体激光器建立三维有限元模型,分别模拟计算了空洞面积、空洞厚度和空洞位置与结温的关系。芯片出光面边缘的有源区区域形成的空洞对芯片的结温影响更为显著,最后得到空洞面积与器件结温的关系,并表明对空洞率控制的重要性。     

嵌入到Fabry-Perot谐振腔的双晶约瑟夫森结阵列的阻抗匹配和相位锁定研究

在He等人所做的嵌入到Fabry-Perot谐振腔中约瑟夫森结阵列的微波辐照研究基础上,提出了同时实现约瑟夫森结阵列阻抗匹配和相位锁定的方法,进行了相关的电磁仿真和数值计算.双晶约瑟夫森结阵列被制作在YSZ双晶基片上,同时被嵌入到Fabry-Perot谐振腔内.通过在基片上制作与结阵列集成的串联馈电半波偶极天线阵,并对其结构进行优化实现了结与天线的匹配,数值计算表明结的辐射效率达到94%;利用天线阵辐射场的特征和对模型合理的设计,使Fabry-Perot谐振腔和基片同时谐振在合适的模式下,从而使结阵列与谐 关键词： 约瑟夫森结阵列 阻抗匹配 相位锁定 Fabry-Perot谐振腔     

约瑟夫森结(阵列)与谐振器的耦合效应研究

利用一种新的电路模型系统研究了约瑟夫森结(阵列)与谐振器的耦合效应.以结的电压自锁定台阶幅度ΔI为目标值,得到了谐振电路的电阻R、谐振频率fr对耦合的影响规律,并给出了合理解释;以结阵列的相位互锁定强度IL为目标,研究了IL对锁定电压VL的依赖关系,同时,通过相关计算将其与通常电路模型下得到的结果进行了比较.     

Structural characterizations of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by transmission electron microscopy

We have investigated the structure of Co₂MnSi/MgO/Co₂MnSi magnetic tunneling junctions with different tunnel magnetoresistance values depending on the in situ annealing temperatures just after the deposition of the upper Co₂MnSi electrodes. The nano-beam diffraction patterns indicated that the degree of order of the upper Co₂MnSi electrode annealed at 550 °C was higher than that of an electrode annealed at 400 °C. Moreover, the degree of the L2₁ order of the upper Co₂MnSi electrode annealed at 550 °C was even lower than that of the lower Co₂MnSi electrode annealed at an almost equal temperature of 600 °C. Atomic-scale observation using a high-angle annular dark-field (HAADF) method distinctly showed the existence of the L2₁-ordered regions in the B2-ordered matrix in the upper Co₂MnSi electrode annealed at 400 °C.     

Developing Josephson junction array chips for microvolt applications

Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microwave. By selecting different parts of the array, it can output a voltage from 1 μV to 256 μV. The flat region of the voltage steps is over 200 μA.This kind of array is useful for potential microvolt applications.     

双极结型晶体管的集电结反向雪崩击穿特性

通过气体放电产生更高浓度的低温等离子体要求具有纳秒上升沿和纳秒脉宽的高重频快脉冲,而目前被广泛使用的MOSFET和IGBT都无法满足这些参数要求,而双极结型晶体管(BJT）的集电极与发射极之间的雪崩击穿过程具有快导通、快恢复、高稳定性等优点,适合作为小型Marx发生器的自击穿开关。文中对用多种型号的BJT进行击穿特性比较测试实验,发现可以通过改变BJT的门极和发射极的并联电阻来调节其雪崩击穿电压,实现一定范围的工作电压。雪崩击穿恢复特性实验表明,当击穿电流衰减到低于维持电流时,BJT就会开始恢复绝缘而关断,通过改变电路中的参数以控制击穿电流的变化就可以控制BJT的雪崩击穿导通时间（即导通脉宽）。将这些结论应用到实际电路中,可获得上升沿5 ns、脉宽为10 ns、幅值2 kV、重复频率高达100 kHz的纳秒快脉冲,可用于激发高浓度低温等离子体。     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

非晶硅碳薄膜发光二极管发光的热致猝灭

本文详细测试了用RF-PECVD法制备的非晶硅碳薄膜发光二极管的光强电流特性和温度对器件发光强度的影响.在直流电流驱动下,器件的发光在注入电流1A/cm2左右趋于饱和,而在低占空比的脉冲电流驱动下器件的发光直至注入电流20A/cm2仍随电流近似线性增长,但提高环境温度发光随之下降.结合对器件受热情况分析表明,热致猝灭而非场致猝灭导致了器件在大电流下的发光饱和,并简要提出了改进器件散热的措施.     

声表面波MIM隧道发光二极管

我们在研究MIM隧道发光结(金属-绝缘层-金属)的过程中,首次以表面声波代替表面随机粗糙度的作用,将MIM结制作在声表面波场中,结果使结的发光效率、发光强度、稳定性、均匀性都有改善.本文介绍了结的基本结构,基本工艺,阐明了结的发光机理,讨论了结的Ⅰ-Ⅴ特性曲线和光谱曲线,根据结具有显著的负阻现象,我们设计出了一种新型的开关器件.