碳纳米管阵列超双疏性质的发现

用高温裂解酞菁金属络合物方法制备了几种具有不同形貌的阵列碳纳米管膜 ,并对其超疏水和超双疏性质进行了研究 .对于具有均匀长度和外径的阵列碳纳米管膜 ,文章作者发现 ,在未经任何处理时 ,其表现出超疏水和超亲油性质 ,与水的接触角为 15 8 5± 1 5° ,与油的接触角为 0± 1 0°.经氟化处理后 ,则表现出超双疏性质 ,与水和油的接触角分别为 171± 0 5°和 16 1± 1 0° .对具有类荷叶结构的阵列碳纳米管膜 ,其表面形貌与荷叶的十分接近 ,且在未经任何处理时所表现出的超疏水性也与荷叶的非常接近 ,与水的接触角为 16 6° ,滚动角为 8° .这种超疏水和超双疏性质是由表面的纳米结构以及微米结构和纳米结构的结合产生的 .这一发现为无氟超疏水表面 界面材料的研究提供了新的思路     

Comparison of Various Films Used in Biophysical Investigations as Anisotropic Matrices

Polarized spectra of biological molecules oriented in artificial systems can give useful information of structural and spectroscopical properties of these molecules^1,2. Such investigations have been carried out recently for several biological systems: chlorophylls^{3, 4, 5, 6, 7}, carotenoids⁸, biliproteins^{9, 10}, bacterial reaction centers^{11, 12}, bacteriochlorophylls¹³ etc.     

Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films

In this paper, the effect of bismuth doping on the structural, morphological, optical and electrical properties of Cu₂ZnSnS₄ (CZTS) films has been investigated. The undoped and bismuth doped CZTS films (0, 0.5, 1, 1.5 and 2 mol%) were deposited on glass substrates by solution based method. The XRD result shows a significant improvement in the crystallinity of the films with increase in bismuth concentration. The Raman spectra of the films show the dominant peak at 334 cm^–1 corresponding to A₁ vibrational mode of CZTS kesterite phase. The FESEM micrographs of the films show an enhancement in the grain size and densification with the addition of bismuth ion concentration. The optical bandgap of the films was found to vary (1.59–1.40 eV) with the doping of bismuth ions. The I –V characteristics indicate twofold increment in the photoconductivity for the bismuth doped CZTS films under 100 mW/cm² illumination suggesting their potential application in photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

薄膜生长荧光显微图像实时采集与分析系统

设计了一套具有一定实用意义和科学价值的薄膜生长荧光显微图像实时采集与分析系统,可以实现透明衬底上有机荧光分子薄膜生长的实时原位监测。进一步阐明了系统的硬件构筑思路和软件设计架构,并依据薄膜的形貌特征,给出8个主要生长信息参数及其求取算法,并利用自行搭建的实验系统,针对联六苯(p-6P)分子在云母衬底上的纳米纤维生长过程,得出了其准一维的线性生长规律。该系统作为重要的薄膜生长成像监测技术,有望在薄膜与衬底表面相互作用和衬底微区结构特性研究等方面起到积极的作用。     

Pt/GdFeCo/Pt多层膜的磁性和反常霍尔效应研究

亚铁磁材料因具有反铁磁排列的子晶格磁矩而表现出诸多丰富的物理性质,在磁信息存储和逻辑领域具有广阔的应用前景.本文采用磁控溅射方法在热氧化的硅基片上制备了Pt/GdFeCo(t)/Pt多层膜,系统研究了亚铁磁GdFeCo厚度对多层膜的表面形貌、结构、磁性以及反常霍尔效应(AHE)的影响.结构测试表明薄膜表面粗糙度较小,且GdFeCo层为非晶态;实验中利用GdFeCo层厚度可有效控制Gd元素含量,从而调控GdFeCo趋近反铁磁态特性的磁矩补偿点;通过重金属强自旋轨道耦合效应(SOC)和非晶态亚铁磁薄膜面内压应力,实现了良好垂直各向异性(PMA);进一步阐明了亚铁磁薄膜中磁性和反常霍尔效应的内在产生机制以及磁矩补偿点与温度的内在关系.这些结果为构建新一代低功耗自旋电子器件奠定基础.     

193 nm氟化物增透膜的特性

 为了研制低损耗、高性能的193 nm氟化物增透膜,研究了基底和不同氟化物材料组合对氟化物增透膜的影响。在熔石英基底上,将挡板法和预镀层技术相结合,采用热舟蒸发方式制备了不同氟化物材料组合增透膜,对增透膜的剩余反射率和光学损耗等光学特性,以及表面粗糙度和应力等特性进行了测量和比较。在分析比较和优化的基础上,设计制备的3层1/4波长规整膜系AlF3/LaF3增透膜在193 nm的剩余反射率低于0.14%,单面镀膜增透膜的透射率为93.85%,增透膜表面均方根粗糙度为0.979 nm,总的损耗约为6％。要得到高性能的193 nm增透膜,应选用超级抛光基底。     

Crystal structure of a cholesterol-based dimesogen

The title compound, cholesteryl 6[4-(4-pentyloxyphenylethynyl)phenoxy]hexanoate (DMT5), a cholesterol-based dimesogen, crystallizes in the monoclinic space group P2₁ with the parameters a = 9.812(3) Å, b = 9.713(2) Å, c = 24.179(2) Å, β = 92.48(1)° V = 2302.2(9) ų, Z = 2, F₀₀₀ = 836, λ(MoK_α) = 0.71069 Å, μ = 0.067 cm 1, final R = 0.0772. The structure has intermolecular hydrogen bonds; it is stabilized by the presence of intermolecular contacts whose spacings are less than van der Waals' radii.     

Spreading and retraction dynamics of smectic liquid crystal domains at interfaces

The spreading of a liquid drop over liquid subphase can be driven by change in interfacial tension mediated through a surfactant, volatile solvent or photoinduced reaction. In contrast to the spreading dynamics of a liquid drop, a liquid crystal drop with anisotropic structure can lead to interesting behaviour due to its viscoelasticity and anchoring at the interfaces. Recently, we have reported studies on unusual spreading and retraction dynamics of a smectic domain doped with a fluorescent dye in the collapsed state of a Langmuir monolayer. Under epifluorescence microscope, during excitation, a stack of layers of the dye-doped smectic domain gets sheared causing the domain to spread asymmetrically. Further, due to line tension, the domain transforms into a circular shape. We also find the domain size to be about twice that of the initial size. Interestingly, in the absence of excitation, the domain retracts to a smaller area. During retraction of the domain, successive generation of edge dislocation loops arising from a nucleus results in an increase in the domain thickness. The dynamics of spreading and retraction of the domain can be understood by invoking changes in the spreading coefficient due to photoinduced modification of the interfacial tension.     

Photostabilization study of ethylene-butyl acrylate copolymers functionalized in the molten state with hindered amine light stabilizers (HALS)

Hindered Amine Light Stabilizers (HALS), N-methylated and O-alkylhydroxylamine, were successfully anchored onto an ethylene-co-butyl acrylate (BA) by a transesterification reaction in the molten state. The content of HALS bonded to the EBA was calculated from the atomic ratio (N/C) determined by X-ray Photoelectron Spectroscopy (XPS). After reaction times of 5–30 min in the molten state the content of bonded HALS attained values from 0.17 to 0.63%. The modified EBA with HALS were studied by Chemiluminescence emission and the photostabilization effect was evaluated under accelerated ageing in the presence of pesticides. The antioxidant effect of HALS bonded to EBA was evaluated by determination of Carbonyl Index (CI) and retention of elongation at break as a function of exposure time and pesticide treatment. The stability of the EBA with anchored HALS exhibited higher performance as shown by low CI-values and correlated with the content of bound HALS and the thermal history of the materials. Also, mechanical properties correlated well with the CI results and the photostabilization of bound HALS was effective until 3150 h of exposure time using pesticides.     

Effects of laser irradiation on optical properties of a-Se100−x Te x thin films

The effect of laser irradiation on the optical properties of thermally evaporated Se_100?x Te _x (x=8, 12, 16) chalcogenide thin films has been studied. The result shows that the irradiation causes a shift in the optical gap. The results have been analyzed on the basis of laser irradiation-induced defects in the film. The width of the tail of localized state in the band gap has been evaluated using the Urbach edge method. As the irradiation time increases, the values of the optical energy gap for all compositions decrease, while tail energy width increases. It is also observed that the optical energy gap decreases with increasing Te content in the alloy. These changes are a consequence of an increment in disorder produced by laser irradiation in the amorphous structure of thin film.