Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.     

Microstructure and properties of Nb/Ta multilayer films irradiated by a high current pulse electron beam

Nb/Ta multilayer films deposited on Ti6Al4V substrate with Nb and Ta monolayer thicknesses of 30 nm, 120 nm, and 240 nm were irradiated by a high current pulse electron beam (HCPEB) to prepare Nb-Ta alloyed layers. The microstructure and the composition of the outmost surface of melted alloyed layers were investigated using a transmission electron microscope (TEM) equipped with an X-ray energy dispersive spectrometer (EDS) attachment. The Ta content of the alloyed surface layer prepared from the monolayer of thickness 30 nm, 120 nm, and 240 nm was ～ 27.7 at.%, 6.37 at.%, and 0 at.%, respectively. It was found that the Ta content in the alloyed layer plays a dominant role in the microstructure of the films. The hardness and the wear rate of the alloyed layers decrease with the increasing content of Ta in the surface layer.     

A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS

A novel low specific on-resistance(R on,sp) silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(pLDMOS) compatible with high voltage(HV) n-channel LDMOS(nLDMOS) is proposed.The pLDMOS is built in the N-type SOI layer with a buried P-type layer acting as a current conduction path in the on-state(BP SOI pLDMOS).Its superior compatibility with the HV nLDMOS and low voltage(LV) complementary metal-oxide semiconductor(CMOS) circuitry which are formed on the N-SOI layer can be obtained.In the off-state the P-buried layer built in the NSOI layer causes multiple depletion and electric field reshaping,leading to an enhanced(reduced) surface field(RESURF) effect.The proposed BP SOI pLDMOS achieves not only an improved breakdown voltage(BV) but also a significantly reduced Ron,sp.The BV of the BP SOI pLDMOS increases to 319 V from 215 V of the conventional SOI pLDMOS at the same half cell pitch of 25 μm,and R on,sp decreases from 157 mΩ·cm2 to 55 mΩ·cm2.Compared with the PW SOI pLDMOS,the BP SOI pLDMOS also reduces the R on,sp by 34% with almost the same BV.     

Extraction and verification of coherent structures in near-wall turbulence

According to the characteristics of coherent structures in near-wall turbulence, an accurate extraction and verification method is developed based on wavelet transform (WT) and correlation analysis in this paper. At first, the fluid field of a turbulent boundary layer is measured precisely in a gravitational low-speed water tunnel. On the basis of the distribution of the coherent structures, velocity data of three test points are selected and analyzed, whose dimensionless heights are 20.8, 33.5, and 42.6. According to the frequency range of power spectrum density (PSD), coherent and incoherent structures are both extracted from the original signals using continuous and orthogonal wavelet transforms. To confirm the validity of the extracted signals, the probability density function (PDF) of each extracted signal is calculated. The result demonstrates that the incoherent structures obey the Gaussian distribution, while the coherent structures deviate from the Gaussian distribution. The PDFs of the coherent structures and the original signals are similar, which shows that the coherent structures make most contributions to the turbulence. For further verification, a correlation parameter between coherent and incoherent structures is defined, which evidently proves the validity of the extraction method in this paper.     

基于一种新型杂化阳极修饰层的高效有机电致发光器件

设计了基于Bphen∶LiF、Al和MoO₃的杂化电荷注入层,并将其应用于有机电致发光器件中。实验研究表明,这种杂化层作为阳极修饰层是非常有效的,它可以增加器件中载流子注入的平衡性,提高器件的性能。相对参考器件,基于杂化阳极修饰层的电致发光器件的最大电流效率和最大功率效率均提高1.3倍左右。我们对器件性能及其提高的机理进行了分析。     

基于激光雷达观测的大气边界层自动识别局部最优点算法

大气边界层高度是影响近地面大气物理运动的主要因素,同时也是影响地面污染物浓度的一个重要因素。地基激光雷达可以对大气气溶胶的垂直分布进行连续稳定的监测,应用激光雷达技术对大气边界层进行连续观测可以为环境监测与预报提供指导性的动态信息。针对存在残留层以及外来污染物输入情况时边界层高度变化检测的可靠性及计算效率问题,结合梯度法的物理意义与激光雷达时序图的图形图像学特征,提出了一种基于时空邻近度的边界层局部最优点识别算法。以江苏省无锡市新区偏振米散射激光雷达太湖观测站点的气溶胶垂直观测数据为例,通过对2012年底两次污染事件进行观测分析,分别使用梯度法和局部最优点法进行大气边界层高度的自动识别。实验结果表明,在静稳状态和污染混入后的情况下,梯度法与局部最优点识别法的结果较为接近,但梯度法在处理污染混入状态以及存在残留层的情况下误判率较高。基于时空邻近度的局部最优点算法通过对垂直特征值以及水平相关性的控制,有效地消除了在弱信号、噪声信号、低云以及存在残留层和外来污染等情况下导致的计算机误判现象,在减小算法时间复杂度的同时在计算机自动识别结果具有更高的稳定性,弥补了梯度法在自动化运行中的识别精度与计算效率的不足。     

A model for the thermal conductivity of nanofluids – the effect of interfacial layer

A model for predicting the effective thermal conductivity of nanofluids is proposed. It has been documented that the interfacial layer at the solid (particle)/liquid interface and particle size is one of the major mechanisms for enhancing the thermal conductivity of nanofluids. Comparing with other classical models, the proposed model takes into account some additional effects including volume fraction, thickness, thermal conductivity of the interfacial layer and particle size. The proposed model is found to be better than the existing models since the predicted effective thermal conductivity of different types of nanofluids are closer to the experimental results.     

Segregation effect in symmetric cellular automata model for two-lane mixed traffic

Segregation effects commonly exist in granular mixtures with difference in size, shape or density. In mixed traffic flow, slow vehicle and fast vehicle, as two types of particles, have different desired speed. We investigate the segregation along the road in mixed traffic flow by using a symmetric two-lane cellular automata model. A parameter D, which quantifies the degree of segregation, is defined. We study the density dependency of the parameter at different randomization probability. Simulation results show that segregation is more obviously in free flow region. We argue that the overtaking maneuvers have similar effect as percolation in granular flow.     

Phase formation by ion beam mixing in the Ti/Si multilayer system

The irradiation effect of 350 MeV Au⁺ ions on Ti/Si multilayers has been studied using Rutherford backscattering spectroscopy, X-ray reflectivity (XRR) and grazing incidence X-ray diffraction (GIXRD). Intermixing effects have been studied as a function of fluences of 0.46 × 10¹⁴, 1.82 × 10¹⁴ and 4.62 × 10¹⁴ cm⁻². Rutherford backscattering spectra (RBS) confirm mixing at the interface. X-ray reflectivity patterns show damage at the interfaces with the absence of a continuous fringe pattern at high fluence doses in comparison to the pristine interface. Mixing leads to titanium di-silicide (TiSi₂) phase formation as a shown by grazing incidence X-ray diffraction patterns. The observed intermixing is attributed to energy deposited by the incident ions in the electronic system of the target. Swift heavy ion irradiation induced intermixing increases with fluence.